DE102018212828B4 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number
DE102018212828B4
DE102018212828B4 DE102018212828.6A DE102018212828A DE102018212828B4 DE 102018212828 B4 DE102018212828 B4 DE 102018212828B4 DE 102018212828 A DE102018212828 A DE 102018212828A DE 102018212828 B4 DE102018212828 B4 DE 102018212828B4
Authority
DE
Germany
Prior art keywords
press
wall part
semiconductor device
recess
fit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102018212828.6A
Other languages
German (de)
English (en)
Other versions
DE102018212828A1 (de
Inventor
Hidetoshi Ishibashi
Shinsuke Asada
Yoshitaka Kimura
Minoru EGUSA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102018212828A1 publication Critical patent/DE102018212828A1/de
Application granted granted Critical
Publication of DE102018212828B4 publication Critical patent/DE102018212828B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/15Containers comprising an insulating or insulated base
    • H10W76/153Containers comprising an insulating or insulated base having interconnections in passages through the insulating or insulated base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50Fixed connections
    • H01R12/51Fixed connections for rigid printed circuits or like structures
    • H01R12/55Fixed connections for rigid printed circuits or like structures characterised by the terminals
    • H01R12/58Fixed connections for rigid printed circuits or like structures characterised by the terminals terminals for insertion into holes
    • H01R12/585Terminals having a press fit or a compliant portion and a shank passing through a hole in the printed circuit board
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65Shapes or dispositions of interconnections
    • H10W70/657Shapes or dispositions of interconnections on sidewalls or bottom surfaces of the package substrates, interposers or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/15Containers comprising an insulating or insulated base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42Fillings
    • H10W76/47Solid or gel fillings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/755Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent insulating package substrate, interpose or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
DE102018212828.6A 2017-10-03 2018-08-01 Halbleitervorrichtung Active DE102018212828B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017193299A JP6806024B2 (ja) 2017-10-03 2017-10-03 半導体装置
JP2017-193299 2017-10-03

Publications (2)

Publication Number Publication Date
DE102018212828A1 DE102018212828A1 (de) 2019-04-04
DE102018212828B4 true DE102018212828B4 (de) 2023-10-26

Family

ID=65727861

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102018212828.6A Active DE102018212828B4 (de) 2017-10-03 2018-08-01 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US10388581B2 (https=)
JP (1) JP6806024B2 (https=)
CN (1) CN109599372B (https=)
DE (1) DE102018212828B4 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102500480B1 (ko) * 2017-12-22 2023-02-16 삼성전자주식회사 접촉 부재를 포함하는 전자 장치 및 그 제작 방법
JP7180570B2 (ja) * 2019-09-03 2022-11-30 三菱電機株式会社 半導体モジュール
JP7224272B2 (ja) * 2019-10-30 2023-02-17 三菱電機株式会社 パワー半導体装置
CN111162057B (zh) * 2020-01-06 2022-01-21 珠海格力电器股份有限公司 半导体功率器件及用于半导体功率器件的功率处理组件
EP3961697A1 (de) * 2020-08-25 2022-03-02 Siemens Aktiengesellschaft Halbleitermodul mit einer vertiefung
DE102022118268A1 (de) * 2022-07-21 2024-02-01 Semikron Elektronik Gmbh & Co. Kg Baugruppe mit einem Kunststoffformkörper und einer Mehrzahl von Lastanschlusselementen und Leistungshalbleitereinrichtung hiermit
EP4336551B1 (en) 2022-09-09 2025-09-03 Hitachi Energy Ltd Power module comprising a semiconductor module component and an alignment part, and method for forming the power module
JP7825551B2 (ja) * 2022-12-23 2026-03-06 三菱電機株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006040435B3 (de) 2006-08-29 2008-01-31 Infineon Technologies Ag Anordnung und Verfahren zur Montage eines Leistungshalbleitermoduls
JP2015023226A (ja) 2013-07-23 2015-02-02 三菱電機株式会社 ワイドギャップ半導体装置
DE102010038727B4 (de) 2010-07-30 2015-07-16 Infineon Technologies Ag Leistungshaltleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2928987B2 (ja) * 1995-03-31 1999-08-03 日本航空電子工業株式会社 コンタクト及びその製造方法
CN100517669C (zh) * 2004-06-08 2009-07-22 富士电机电子技术株式会社 半导体装置
JP4475160B2 (ja) * 2005-04-13 2010-06-09 株式会社デンソー 電子装置の製造方法
JP4985116B2 (ja) * 2007-03-08 2012-07-25 富士電機株式会社 半導体装置およびその製造方法
DE102010003367B4 (de) * 2010-03-26 2015-06-25 Infineon Technologies Ag Einpress-Verbindungen für Elektronikmodule
JP5383621B2 (ja) * 2010-10-20 2014-01-08 三菱電機株式会社 パワー半導体装置
JP5972172B2 (ja) * 2010-11-16 2016-08-17 富士電機株式会社 半導体装置
CN104054173B (zh) * 2012-01-25 2017-06-30 三菱电机株式会社 功率用半导体装置
JP5867966B2 (ja) * 2012-08-29 2016-02-24 新電元工業株式会社 半導体装置
JP6157584B2 (ja) * 2013-02-26 2017-07-05 三菱電機株式会社 電力用半導体装置組み込み機器の製造方法および電力用半導体装置
JP2015026820A (ja) * 2013-06-18 2015-02-05 株式会社デンソー 電子装置
CN103531555B (zh) * 2013-10-24 2016-01-20 江苏宏微科技股份有限公司 免焊接端子的功率模块
US20160240452A1 (en) * 2015-02-18 2016-08-18 Semiconductor Components Industries, Llc Semiconductor packages with sub-terminals and related methods
JP6541593B2 (ja) * 2015-05-15 2019-07-10 三菱電機株式会社 電力用半導体装置
US9979105B2 (en) * 2015-05-15 2018-05-22 Mitsubishi Electric Corporation Power semiconductor device
JP6666927B2 (ja) * 2015-12-10 2020-03-18 日立オートモティブシステムズ株式会社 電子制御装置
JP2017193299A (ja) 2016-04-22 2017-10-26 トヨタ自動車株式会社 車両のバッテリ搭載構造
JP6705394B2 (ja) * 2017-02-16 2020-06-03 三菱電機株式会社 半導体モジュールおよびインバータ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006040435B3 (de) 2006-08-29 2008-01-31 Infineon Technologies Ag Anordnung und Verfahren zur Montage eines Leistungshalbleitermoduls
DE102010038727B4 (de) 2010-07-30 2015-07-16 Infineon Technologies Ag Leistungshaltleitermodul und Verfahren zur Herstellung eines Leistungshalbleitermoduls
JP2015023226A (ja) 2013-07-23 2015-02-02 三菱電機株式会社 ワイドギャップ半導体装置

Also Published As

Publication number Publication date
CN109599372B (zh) 2023-02-28
CN109599372A (zh) 2019-04-09
US10388581B2 (en) 2019-08-20
US20190103330A1 (en) 2019-04-04
JP2019067970A (ja) 2019-04-25
JP6806024B2 (ja) 2020-12-23
DE102018212828A1 (de) 2019-04-04

Similar Documents

Publication Publication Date Title
DE102018212828B4 (de) Halbleitervorrichtung
DE102014212519B4 (de) Halbleitervorrichtung
DE102009032973B4 (de) Leistungshalbleitervorrichtung
DE102009055691B4 (de) Leistungshalbleitermodul
DE112013005676B4 (de) Leistungsmodul
DE112016002302B4 (de) Leistungs-Halbleitervorrichtung
DE102009042399B4 (de) Leistungshalbleitervorrichtung und Herstellungsverfahren dafür
DE102008025705B4 (de) Leistungshalbleitervorrichtung
DE102011087414B4 (de) Leistungshalbleitervorrichtung, gedruckte Leiterplatte und Mechanismus zum Verbinden der Leistungshalbleitervorrichtung und der gedruckten Leiterplatte
DE102011084803A1 (de) Leistungshalbleitervorrichtung
DE112015007169B4 (de) Halbleitermodul
DE102009011233A1 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE102014118836A1 (de) Halbleiterbauteil
DE102013202807B4 (de) Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
DE102008008141A1 (de) Leistungshalbleitermodul und Verfahren zu seiner Herstellung
DE102014223863B4 (de) Leistungshalbleitereinrichtungen
DE102005049687A1 (de) Leistungshalbleiterbauteil in Flachleitertechnik mit vertikalem Strompfad
DE102010043839B4 (de) Halbleitervorrichtung mit einem Isoliersubstrat
DE112016006336B4 (de) Halbleitervorrichtung
DE69027724T2 (de) Leistungshalbleiteranordnung mit Plastikumhüllung
DE102018200161B4 (de) Halbleiteranordnung und verfahren zum herstellen der halbleiteranordnung
DE102005047567B3 (de) Leistungshalbleitermodul mit Isolationszwischenlage und Verfahren zu seiner Herstellung
DE102015223300B4 (de) Halbleitervorrichtung
DE102007015731B4 (de) Verfahren zur Herstellung einer Halbleitervorrichtung, sowie hiermit hergestellte Halbleitervorrichtung
DE102020122542A1 (de) Verbindungsclip mit abgewinkelter kontaktfläche und erhöhter brücke

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R084 Declaration of willingness to licence
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023130000

Ipc: H10W0070680000