DE102016216084B8 - Verfahren zum Herstellen eines Bipolartransistors - Google Patents

Verfahren zum Herstellen eines Bipolartransistors Download PDF

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Publication number
DE102016216084B8
DE102016216084B8 DE102016216084.2A DE102016216084A DE102016216084B8 DE 102016216084 B8 DE102016216084 B8 DE 102016216084B8 DE 102016216084 A DE102016216084 A DE 102016216084A DE 102016216084 B8 DE102016216084 B8 DE 102016216084B8
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DE
Germany
Prior art keywords
manufacturing
bipolar transistor
bipolar
transistor
Prior art date
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Application number
DE102016216084.2A
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English (en)
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DE102016216084A1 (de
DE102016216084B4 (de
Inventor
Dmitri Alex Tschumakow
Claus Dahl
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Infineon Technologies Dresden & Co Kg De GmbH
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Infineon Technologies Dresden GmbH and Co KG
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Priority to DE102016216084.2A priority Critical patent/DE102016216084B8/de
Priority to US15/678,152 priority patent/US10468497B2/en
Priority to CN201710742731.7A priority patent/CN107785412B/zh
Publication of DE102016216084A1 publication Critical patent/DE102016216084A1/de
Application granted granted Critical
Publication of DE102016216084B4 publication Critical patent/DE102016216084B4/de
Publication of DE102016216084B8 publication Critical patent/DE102016216084B8/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66265—Thin film bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7317—Bipolar thin film transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE102016216084.2A 2016-08-26 2016-08-26 Verfahren zum Herstellen eines Bipolartransistors Active DE102016216084B8 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE102016216084.2A DE102016216084B8 (de) 2016-08-26 2016-08-26 Verfahren zum Herstellen eines Bipolartransistors
US15/678,152 US10468497B2 (en) 2016-08-26 2017-08-16 Method for manufacturing a bipolar junction transistor
CN201710742731.7A CN107785412B (zh) 2016-08-26 2017-08-25 用于制造双极结型晶体管的方法和双极结型晶体管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102016216084.2A DE102016216084B8 (de) 2016-08-26 2016-08-26 Verfahren zum Herstellen eines Bipolartransistors

Publications (3)

Publication Number Publication Date
DE102016216084A1 DE102016216084A1 (de) 2018-03-01
DE102016216084B4 DE102016216084B4 (de) 2021-02-11
DE102016216084B8 true DE102016216084B8 (de) 2021-12-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016216084.2A Active DE102016216084B8 (de) 2016-08-26 2016-08-26 Verfahren zum Herstellen eines Bipolartransistors

Country Status (3)

Country Link
US (1) US10468497B2 (de)
CN (1) CN107785412B (de)
DE (1) DE102016216084B8 (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326718A (en) 1991-09-23 1994-07-05 Siemens Aktiengesellschaft Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
DE10005442A1 (de) 2000-02-08 2001-08-16 Infineon Technologies Ag Bipolartransistor
DE10038955A1 (de) 2000-08-09 2002-02-28 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
WO2009158054A1 (en) 2008-06-26 2009-12-30 Freescale Semiconductor Inc. Dielectric ledge for high frequency devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5001533A (en) * 1988-12-22 1991-03-19 Kabushiki Kaisha Toshiba Bipolar transistor with side wall base contacts
EP0395358B1 (de) * 1989-04-25 2001-03-14 Matsushita Electronics Corporation Verfahren zur Herstellung eines bipolaren Transistors
JP2842075B2 (ja) * 1992-09-08 1998-12-24 日本電気株式会社 半導体装置の製造方法
US5294558A (en) * 1993-06-01 1994-03-15 International Business Machines Corporation Method of making double-self-aligned bipolar transistor structure
US6680522B1 (en) * 1999-01-11 2004-01-20 Nec Electronics Corporation Semiconductor device with reduced electrical variation
FR2795233B1 (fr) * 1999-06-18 2001-08-24 St Microelectronics Sa Procede de fabrication autoaligne de transistors bipolaires
KR100455829B1 (ko) * 2001-12-10 2004-11-06 주식회사 타키오닉스 초자기정렬 이종접합 바이폴라 소자 및 그 제조방법
US6680552B2 (en) * 2002-01-24 2004-01-20 Visteon Global Technologies, Inc. Flow path for a liquid cooled alternator
DE10317098A1 (de) * 2003-04-14 2004-07-22 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
JP2005011915A (ja) * 2003-06-18 2005-01-13 Hitachi Ltd 半導体装置、半導体回路モジュールおよびその製造方法
CN103000679B (zh) * 2012-12-20 2015-05-06 清华大学 低电阻多晶连接基区全自对准双极晶体管及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5326718A (en) 1991-09-23 1994-07-05 Siemens Aktiengesellschaft Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor
DE10005442A1 (de) 2000-02-08 2001-08-16 Infineon Technologies Ag Bipolartransistor
DE10038955A1 (de) 2000-08-09 2002-02-28 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
WO2009158054A1 (en) 2008-06-26 2009-12-30 Freescale Semiconductor Inc. Dielectric ledge for high frequency devices

Also Published As

Publication number Publication date
US10468497B2 (en) 2019-11-05
US20180061961A1 (en) 2018-03-01
DE102016216084A1 (de) 2018-03-01
CN107785412A (zh) 2018-03-09
DE102016216084B4 (de) 2021-02-11
CN107785412B (zh) 2021-03-30

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Owner name: INFINEON TECHNOLOGIES DRESDEN GMBH & CO. KG, DE

Free format text: FORMER OWNER: INFINEON TECHNOLOGIES DRESDEN GMBH, 01099 DRESDEN, DE