DE102014001217A1 - Package für Hochleistungs-Halbleitervorrichtungen - Google Patents

Package für Hochleistungs-Halbleitervorrichtungen Download PDF

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Publication number
DE102014001217A1
DE102014001217A1 DE201410001217 DE102014001217A DE102014001217A1 DE 102014001217 A1 DE102014001217 A1 DE 102014001217A1 DE 201410001217 DE201410001217 DE 201410001217 DE 102014001217 A DE102014001217 A DE 102014001217A DE 102014001217 A1 DE102014001217 A1 DE 102014001217A1
Authority
DE
Germany
Prior art keywords
thermal distribution
distribution layer
layer
thermal
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE201410001217
Other languages
German (de)
English (en)
Inventor
Tarak A. Railkar
Deep C. Dumka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qorvo US Inc
Original Assignee
Triquint Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Triquint Semiconductor Inc filed Critical Triquint Semiconductor Inc
Publication of DE102014001217A1 publication Critical patent/DE102014001217A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/01—Manufacture or treatment
    • H10W40/03—Manufacture or treatment of arrangements for cooling
    • H10W40/037—Assembling together parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
DE201410001217 2013-02-18 2014-01-30 Package für Hochleistungs-Halbleitervorrichtungen Withdrawn DE102014001217A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/769,729 2013-02-18
US13/769,729 US8946894B2 (en) 2013-02-18 2013-02-18 Package for high-power semiconductor devices

Publications (1)

Publication Number Publication Date
DE102014001217A1 true DE102014001217A1 (de) 2014-08-21

Family

ID=51263970

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201410001217 Withdrawn DE102014001217A1 (de) 2013-02-18 2014-01-30 Package für Hochleistungs-Halbleitervorrichtungen

Country Status (4)

Country Link
US (2) US8946894B2 (https=)
JP (1) JP6527666B2 (https=)
DE (1) DE102014001217A1 (https=)
TW (1) TWI620288B (https=)

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EP1973190A1 (en) 2007-03-20 2008-09-24 Rohm and Haas Electronic Materials LLC Integrated electronic components and methods of formation thereof
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
US10003149B2 (en) 2014-10-25 2018-06-19 ComponentZee, LLC Fluid pressure activated electrical contact devices and methods
US10847469B2 (en) * 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
US10546823B2 (en) 2015-11-13 2020-01-28 Intel Corporation Apparatus and method for mitigating surface imperfections on die backside film using fluorocarbon material
US10499461B2 (en) * 2015-12-21 2019-12-03 Intel Corporation Thermal head with a thermal barrier for integrated circuit die processing
EP3208842A1 (de) * 2016-02-19 2017-08-23 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung einer substratplatte, substratplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul
EP3208841B1 (de) * 2016-02-19 2020-12-09 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung einer wärmespreizplatte, wärmespreizplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul
US9984951B2 (en) * 2016-07-29 2018-05-29 Nxp Usa, Inc. Sintered multilayer heat sinks for microelectronic packages and methods for the production thereof
US20200368804A1 (en) * 2019-05-24 2020-11-26 Trusval Technology Co., Ltd. Manufacturing process for heat sink composite having heat dissipation function and manufacturing method for its finished product
US11862718B2 (en) 2020-10-12 2024-01-02 Bae Systems Information And Electronic Systems Integration Inc. III-nitride thermal management based on aluminum nitride substrates
US12224337B2 (en) * 2020-12-23 2025-02-11 Intel Corporation PGaN enhancement mode HEMTs with dopant diffusion spacer
US20240063091A1 (en) * 2022-08-19 2024-02-22 Intel Corporation Thermally enhanced structural member and/or bond layer for multichip composite devices

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JPS6027188B2 (ja) * 1981-12-15 1985-06-27 住友電気工業株式会社 半導体素子塔載用基板
JPH04213863A (ja) * 1990-12-11 1992-08-04 Fujitsu Ltd Ｉｃ実装用パッケージ／キャリア
US6127724A (en) * 1996-10-31 2000-10-03 Tessera, Inc. Packaged microelectronic elements with enhanced thermal conduction
US6635514B1 (en) * 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
JP3144387B2 (ja) * 1998-08-17 2001-03-12 日本電気株式会社 半導体装置の製造方法
US7078109B2 (en) * 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure
TWI288435B (en) * 2000-11-21 2007-10-11 Matsushita Electric Industrial Co Ltd Semiconductor device and equipment for communication system
US6617683B2 (en) * 2001-09-28 2003-09-09 Intel Corporation Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material
KR20050084845A (ko) * 2002-10-11 2005-08-29 치엔 민 성 탄소질 열 확산기 및 관련 방법
US7067903B2 (en) * 2002-11-07 2006-06-27 Kabushiki Kaisha Kobe Seiko Sho Heat spreader and semiconductor device and package using the same
JP2004172406A (ja) * 2002-11-20 2004-06-17 Kobe Steel Ltd セラミックス付き半導体基板、セラミックス付き半導体ウエハ及びその製造方法
JP2005056967A (ja) * 2003-08-01 2005-03-03 Olympus Corp 半導体コンポーネント
US7579687B2 (en) * 2004-09-03 2009-08-25 Entorian Technologies, Lp Circuit module turbulence enhancement systems and methods
US7446410B2 (en) * 2004-09-03 2008-11-04 Entorian Technologies, Lp Circuit module with thermal casing systems
JP2006202938A (ja) * 2005-01-20 2006-08-03 Kojiro Kobayashi 半導体装置及びその製造方法
JP5166278B2 (ja) * 2005-11-18 2013-03-21 クリー インコーポレイテッド 固体素子照明タイル
US7719816B2 (en) * 2007-05-22 2010-05-18 Centipede Systems, Inc. Compliant thermal contactor
JP5520861B2 (ja) * 2010-03-26 2014-06-11 古河電気工業株式会社 銅合金微粒子分散液、焼結導電体の製造方法、及び焼結導電体、並びに導電接続部材
JP5525335B2 (ja) * 2010-05-31 2014-06-18 株式会社日立製作所 焼結銀ペースト材料及び半導体チップ接合方法

Also Published As

Publication number Publication date
TWI620288B (zh) 2018-04-01
US20150104906A1 (en) 2015-04-16
US8946894B2 (en) 2015-02-03
US20160155681A9 (en) 2016-06-02
US20140231815A1 (en) 2014-08-21
JP2014158025A (ja) 2014-08-28
JP6527666B2 (ja) 2019-06-05
TW201444034A (zh) 2014-11-16
US9559034B2 (en) 2017-01-31

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R005 Application deemed withdrawn due to failure to request examination