JP6527666B2 - ハイパワー半導体素子用パッケージ - Google Patents
ハイパワー半導体素子用パッケージ Download PDFInfo
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- JP6527666B2 JP6527666B2 JP2014025396A JP2014025396A JP6527666B2 JP 6527666 B2 JP6527666 B2 JP 6527666B2 JP 2014025396 A JP2014025396 A JP 2014025396A JP 2014025396 A JP2014025396 A JP 2014025396A JP 6527666 B2 JP6527666 B2 JP 6527666B2
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- heat dissipating
- dissipating layer
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- die
- heat
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- 239000004065 semiconductor Substances 0.000 title description 21
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 11
- 230000017525 heat dissipation Effects 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 63
- 238000004519 manufacturing process Methods 0.000 description 25
- 238000000034 method Methods 0.000 description 25
- 239000000463 material Substances 0.000 description 16
- 239000012790 adhesive layer Substances 0.000 description 9
- 238000003892 spreading Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000010432 diamond Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000002134 carbon nanofiber Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical class C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
Claims (5)
- 金属媒体と、
前記金属媒体に結合される第1の熱発散層と、
接着剤により前記第1の熱発散層に結合される第2の熱発散層であって、前記第1の熱発散層および前記第2の熱発散層が化学気相法で形成されるダイヤモンドで構成され、前記接着剤が焼結性の銀または焼結性の銅である第2の熱発散層と、
前記第2の熱発散層に結合されるダイと、を備える装置。 - 前記ダイは、窒化ガリウム(GaN)のダイである、請求項1に記載の装置。
- 前記金属媒体は、銅(Cu)またはアルミニウム(Al)を備える、請求項1または2に記載の装置。
- 前記第1の熱発散層は、25μmから500μmの間の厚さを有し、
前記第2の熱発散層は、25μmから500μmの間の厚さを有する、請求項1から3のいずれか一項に記載の装置。 - 無線周波数信号を送信または受信するように構成される無線周波数(RF)フロントエンドと、
前記RFフロントエンドに接続され、前記RFフロントエンドに電力供給する電源と、
パワー増幅のために前記RFフロントエンド内に設けられ、または、パワーマネジメントのために前記電源内に設けられる、窒化ガリウム(GaN)高電子移動度トランジスタ(HEMT)と、を備え、
前記GaN−HEMTは、
金属媒体と、
前記金属媒体に結合される第1の熱発散層と、
接着剤により前記第1の熱発散層に結合される第2の熱発散層であって、前記第1の熱発散層および前記第2の熱発散層が化学気相法で形成されるダイヤモンドで構成され、前記接着剤が焼結性の銀または焼結性の銅である第2の熱発散層と、
前記第2の熱発散層に結合されるGaNのダイと、を有するシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/769,729 | 2013-02-18 | ||
US13/769,729 US8946894B2 (en) | 2013-02-18 | 2013-02-18 | Package for high-power semiconductor devices |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014158025A JP2014158025A (ja) | 2014-08-28 |
JP2014158025A5 JP2014158025A5 (ja) | 2017-03-16 |
JP6527666B2 true JP6527666B2 (ja) | 2019-06-05 |
Family
ID=51263970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014025396A Active JP6527666B2 (ja) | 2013-02-18 | 2014-02-13 | ハイパワー半導体素子用パッケージ |
Country Status (4)
Country | Link |
---|---|
US (2) | US8946894B2 (ja) |
JP (1) | JP6527666B2 (ja) |
DE (1) | DE102014001217A1 (ja) |
TW (1) | TWI620288B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7755174B2 (en) | 2007-03-20 | 2010-07-13 | Nuvotonics, LLC | Integrated electronic components and methods of formation thereof |
US10186458B2 (en) | 2012-07-05 | 2019-01-22 | Infineon Technologies Ag | Component and method of manufacturing a component using an ultrathin carrier |
US10003149B2 (en) | 2014-10-25 | 2018-06-19 | ComponentZee, LLC | Fluid pressure activated electrical contact devices and methods |
US10847469B2 (en) * | 2016-04-26 | 2020-11-24 | Cubic Corporation | CTE compensation for wafer-level and chip-scale packages and assemblies |
WO2017082926A1 (en) * | 2015-11-13 | 2017-05-18 | Intel Corporation | Apparatus and method for mitigating surface imperfections on die backside film |
US10499461B2 (en) * | 2015-12-21 | 2019-12-03 | Intel Corporation | Thermal head with a thermal barrier for integrated circuit die processing |
EP3208841B1 (de) * | 2016-02-19 | 2020-12-09 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung einer wärmespreizplatte, wärmespreizplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul |
EP3208842A1 (de) * | 2016-02-19 | 2017-08-23 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung einer substratplatte, substratplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul |
US9984951B2 (en) * | 2016-07-29 | 2018-05-29 | Nxp Usa, Inc. | Sintered multilayer heat sinks for microelectronic packages and methods for the production thereof |
US20200368804A1 (en) * | 2019-05-24 | 2020-11-26 | Trusval Technology Co., Ltd. | Manufacturing process for heat sink composite having heat dissipation function and manufacturing method for its finished product |
US11862718B2 (en) | 2020-10-12 | 2024-01-02 | Bae Systems Information And Electronic Systems Integration Inc. | III-nitride thermal management based on aluminum nitride substrates |
US20220199816A1 (en) * | 2020-12-23 | 2022-06-23 | Intel Corporation | pGaN ENHANCEMENT MODE HEMTs WITH DOPANT DIFFUSION SPACER |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6027188B2 (ja) * | 1981-12-15 | 1985-06-27 | 住友電気工業株式会社 | 半導体素子塔載用基板 |
JPH04213863A (ja) * | 1990-12-11 | 1992-08-04 | Fujitsu Ltd | Ic実装用パッケージ/キャリア |
US6127724A (en) * | 1996-10-31 | 2000-10-03 | Tessera, Inc. | Packaged microelectronic elements with enhanced thermal conduction |
US6635514B1 (en) * | 1996-12-12 | 2003-10-21 | Tessera, Inc. | Compliant package with conductive elastomeric posts |
JP3144387B2 (ja) * | 1998-08-17 | 2001-03-12 | 日本電気株式会社 | 半導体装置の製造方法 |
US7078109B2 (en) * | 2000-02-25 | 2006-07-18 | Thermagon Inc. | Heat spreading thermal interface structure |
TWI288435B (en) * | 2000-11-21 | 2007-10-11 | Matsushita Electric Ind Co Ltd | Semiconductor device and equipment for communication system |
US6617683B2 (en) * | 2001-09-28 | 2003-09-09 | Intel Corporation | Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material |
KR20050084845A (ko) * | 2002-10-11 | 2005-08-29 | 치엔 민 성 | 탄소질 열 확산기 및 관련 방법 |
TWI239606B (en) * | 2002-11-07 | 2005-09-11 | Kobe Steel Ltd | Heat spreader and semiconductor device and package using the same |
JP2004172406A (ja) * | 2002-11-20 | 2004-06-17 | Kobe Steel Ltd | セラミックス付き半導体基板、セラミックス付き半導体ウエハ及びその製造方法 |
JP2005056967A (ja) * | 2003-08-01 | 2005-03-03 | Olympus Corp | 半導体コンポーネント |
US7446410B2 (en) * | 2004-09-03 | 2008-11-04 | Entorian Technologies, Lp | Circuit module with thermal casing systems |
US7579687B2 (en) * | 2004-09-03 | 2009-08-25 | Entorian Technologies, Lp | Circuit module turbulence enhancement systems and methods |
JP2006202938A (ja) * | 2005-01-20 | 2006-08-03 | Kojiro Kobayashi | 半導体装置及びその製造方法 |
WO2007061815A1 (en) * | 2005-11-18 | 2007-05-31 | Cree, Inc. | Solid state lighting device |
US7719816B2 (en) * | 2007-05-22 | 2010-05-18 | Centipede Systems, Inc. | Compliant thermal contactor |
JP5520861B2 (ja) * | 2010-03-26 | 2014-06-11 | 古河電気工業株式会社 | 銅合金微粒子分散液、焼結導電体の製造方法、及び焼結導電体、並びに導電接続部材 |
JP5525335B2 (ja) * | 2010-05-31 | 2014-06-18 | 株式会社日立製作所 | 焼結銀ペースト材料及び半導体チップ接合方法 |
-
2013
- 2013-02-18 US US13/769,729 patent/US8946894B2/en active Active
-
2014
- 2014-01-30 DE DE201410001217 patent/DE102014001217A1/de not_active Withdrawn
- 2014-02-13 TW TW103104655A patent/TWI620288B/zh not_active IP Right Cessation
- 2014-02-13 JP JP2014025396A patent/JP6527666B2/ja active Active
- 2014-12-22 US US14/580,147 patent/US9559034B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20140231815A1 (en) | 2014-08-21 |
TWI620288B (zh) | 2018-04-01 |
TW201444034A (zh) | 2014-11-16 |
US20150104906A1 (en) | 2015-04-16 |
US8946894B2 (en) | 2015-02-03 |
US20160155681A9 (en) | 2016-06-02 |
JP2014158025A (ja) | 2014-08-28 |
DE102014001217A1 (de) | 2014-08-21 |
US9559034B2 (en) | 2017-01-31 |
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