JP6527666B2 - ハイパワー半導体素子用パッケージ - Google Patents

ハイパワー半導体素子用パッケージ Download PDF

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Publication number
JP6527666B2
JP6527666B2 JP2014025396A JP2014025396A JP6527666B2 JP 6527666 B2 JP6527666 B2 JP 6527666B2 JP 2014025396 A JP2014025396 A JP 2014025396A JP 2014025396 A JP2014025396 A JP 2014025396A JP 6527666 B2 JP6527666 B2 JP 6527666B2
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Prior art keywords
heat dissipating
dissipating layer
layer
die
heat
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JP2014025396A
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Japanese (ja)
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JP2014158025A5 (https=
JP2014158025A (ja
Inventor
エー． ライルカー、タラク
エー． ライルカー、タラク
シー． ダムカ、ディープ
シー． ダムカ、ディープ
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Qorvo US Inc
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Triquint Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/01—Manufacture or treatment
    • H10W40/03—Manufacture or treatment of arrangements for cooling
    • H10W40/037—Assembling together parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/254—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/259—Ceramics or glasses

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
JP2014025396A 2013-02-18 2014-02-13 ハイパワー半導体素子用パッケージ Active JP6527666B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/769,729 2013-02-18
US13/769,729 US8946894B2 (en) 2013-02-18 2013-02-18 Package for high-power semiconductor devices

Publications (3)

Publication Number Publication Date
JP2014158025A JP2014158025A (ja) 2014-08-28
JP2014158025A5 JP2014158025A5 (https=) 2017-03-16
JP6527666B2 true JP6527666B2 (ja) 2019-06-05

Family

ID=51263970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014025396A Active JP6527666B2 (ja) 2013-02-18 2014-02-13 ハイパワー半導体素子用パッケージ

Country Status (4)

Country Link
US (2) US8946894B2 (https=)
JP (1) JP6527666B2 (https=)
DE (1) DE102014001217A1 (https=)
TW (1) TWI620288B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3104450A3 (en) 2007-03-20 2016-12-28 Nuvotronics, LLC Integrated electronic components and methods of formation thereof
US10186458B2 (en) * 2012-07-05 2019-01-22 Infineon Technologies Ag Component and method of manufacturing a component using an ultrathin carrier
US10847469B2 (en) * 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
US10003149B2 (en) 2014-10-25 2018-06-19 ComponentZee, LLC Fluid pressure activated electrical contact devices and methods
US10546823B2 (en) 2015-11-13 2020-01-28 Intel Corporation Apparatus and method for mitigating surface imperfections on die backside film using fluorocarbon material
US10499461B2 (en) * 2015-12-21 2019-12-03 Intel Corporation Thermal head with a thermal barrier for integrated circuit die processing
EP3208842A1 (de) * 2016-02-19 2017-08-23 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung einer substratplatte, substratplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul
EP3208841B1 (de) * 2016-02-19 2020-12-09 Heraeus Deutschland GmbH & Co. KG Verfahren zur herstellung einer wärmespreizplatte, wärmespreizplatte, verfahren zur herstellung eines halbleitermoduls und halbleitermodul
US9984951B2 (en) * 2016-07-29 2018-05-29 Nxp Usa, Inc. Sintered multilayer heat sinks for microelectronic packages and methods for the production thereof
US20200368804A1 (en) * 2019-05-24 2020-11-26 Trusval Technology Co., Ltd. Manufacturing process for heat sink composite having heat dissipation function and manufacturing method for its finished product
US11862718B2 (en) 2020-10-12 2024-01-02 Bae Systems Information And Electronic Systems Integration Inc. III-nitride thermal management based on aluminum nitride substrates
US12224337B2 (en) * 2020-12-23 2025-02-11 Intel Corporation PGaN enhancement mode HEMTs with dopant diffusion spacer
US20240063091A1 (en) * 2022-08-19 2024-02-22 Intel Corporation Thermally enhanced structural member and/or bond layer for multichip composite devices

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6027188B2 (ja) * 1981-12-15 1985-06-27 住友電気工業株式会社 半導体素子塔載用基板
JPH04213863A (ja) * 1990-12-11 1992-08-04 Fujitsu Ltd Ｉｃ実装用パッケージ／キャリア
US6127724A (en) * 1996-10-31 2000-10-03 Tessera, Inc. Packaged microelectronic elements with enhanced thermal conduction
US6635514B1 (en) * 1996-12-12 2003-10-21 Tessera, Inc. Compliant package with conductive elastomeric posts
JP3144387B2 (ja) * 1998-08-17 2001-03-12 日本電気株式会社 半導体装置の製造方法
US7078109B2 (en) * 2000-02-25 2006-07-18 Thermagon Inc. Heat spreading thermal interface structure
TWI288435B (en) * 2000-11-21 2007-10-11 Matsushita Electric Industrial Co Ltd Semiconductor device and equipment for communication system
US6617683B2 (en) * 2001-09-28 2003-09-09 Intel Corporation Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material
JP2006511098A (ja) * 2002-10-11 2006-03-30 チエン−ミン・ソン 炭素質熱スプレッダー及び関連する方法
US7067903B2 (en) * 2002-11-07 2006-06-27 Kabushiki Kaisha Kobe Seiko Sho Heat spreader and semiconductor device and package using the same
JP2004172406A (ja) * 2002-11-20 2004-06-17 Kobe Steel Ltd セラミックス付き半導体基板、セラミックス付き半導体ウエハ及びその製造方法
JP2005056967A (ja) * 2003-08-01 2005-03-03 Olympus Corp 半導体コンポーネント
US7446410B2 (en) * 2004-09-03 2008-11-04 Entorian Technologies, Lp Circuit module with thermal casing systems
US7579687B2 (en) * 2004-09-03 2009-08-25 Entorian Technologies, Lp Circuit module turbulence enhancement systems and methods
JP2006202938A (ja) * 2005-01-20 2006-08-03 Kojiro Kobayashi 半導体装置及びその製造方法
WO2007061789A1 (en) * 2005-11-18 2007-05-31 Cree, Inc. Tile for solid state lighting panel
US7719816B2 (en) * 2007-05-22 2010-05-18 Centipede Systems, Inc. Compliant thermal contactor
JP5520861B2 (ja) * 2010-03-26 2014-06-11 古河電気工業株式会社 銅合金微粒子分散液、焼結導電体の製造方法、及び焼結導電体、並びに導電接続部材
JP5525335B2 (ja) * 2010-05-31 2014-06-18 株式会社日立製作所 焼結銀ペースト材料及び半導体チップ接合方法

Also Published As

Publication number Publication date
US20150104906A1 (en) 2015-04-16
DE102014001217A1 (de) 2014-08-21
JP2014158025A (ja) 2014-08-28
US20160155681A9 (en) 2016-06-02
TW201444034A (zh) 2014-11-16
TWI620288B (zh) 2018-04-01
US8946894B2 (en) 2015-02-03
US9559034B2 (en) 2017-01-31
US20140231815A1 (en) 2014-08-21

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