DE102009052392A1 - SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens - Google Patents
SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens Download PDFInfo
- Publication number
- DE102009052392A1 DE102009052392A1 DE200910052392 DE102009052392A DE102009052392A1 DE 102009052392 A1 DE102009052392 A1 DE 102009052392A1 DE 200910052392 DE200910052392 DE 200910052392 DE 102009052392 A DE102009052392 A DE 102009052392A DE 102009052392 A1 DE102009052392 A1 DE 102009052392A1
- Authority
- DE
- Germany
- Prior art keywords
- incidence
- deflector
- sample
- particle
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000002245 particle Substances 0.000 claims abstract description 32
- 230000005284 excitation Effects 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 238000012216 screening Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 8
- 230000005465 channeling Effects 0.000 description 8
- 230000004075 alteration Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 230000005686 electrostatic field Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1478—Beam tilting means, i.e. for stereoscopy or for beam channelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/295—Electron or ion diffraction tubes
- H01J37/2955—Electron or ion diffraction tubes using scanning ray
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1506—Tilting or rocking beam around an axis substantially at an angle to optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1534—Aberrations
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200910052392 DE102009052392A1 (de) | 2009-11-09 | 2009-11-09 | SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens |
| EP10014424.5A EP2320217B1 (en) | 2009-11-09 | 2010-11-09 | SACP method and particle optical system for performing the method |
| US12/942,477 US9093246B2 (en) | 2009-11-09 | 2010-11-09 | SACP method and particle optical system for performing the method |
| JP2010250911A JP5819054B2 (ja) | 2009-11-09 | 2010-11-09 | Sacp法およびsacp法を行うための粒子光学系 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200910052392 DE102009052392A1 (de) | 2009-11-09 | 2009-11-09 | SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102009052392A1 true DE102009052392A1 (de) | 2011-12-15 |
Family
ID=43414862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE200910052392 Ceased DE102009052392A1 (de) | 2009-11-09 | 2009-11-09 | SACP-Verfahren und teilchenoptisches System zur Ausführung eines solchen Verfahrens |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9093246B2 (https=) |
| EP (1) | EP2320217B1 (https=) |
| JP (1) | JP5819054B2 (https=) |
| DE (1) | DE102009052392A1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112011104595B4 (de) * | 2011-01-25 | 2015-10-01 | Hitachi High-Technologies Corporation | Vorrichtung mit einem geladenen Teilchenstrahl sowie Verfahren zur Steuerung |
| US10910194B2 (en) | 2016-01-29 | 2021-02-02 | Hitachi High-Tech Corporation | Charged particle beam device and optical-axis adjusting method thereof |
| DE102021132340A1 (de) | 2021-12-08 | 2023-06-15 | Carl Zeiss Microscopy Gmbh | Verfahren des Erzeugens einer Kristallorientierungskarte eines Oberflächenabschnitts einer Probe und Computerprogrammprodukt |
| US12347640B2 (en) | 2018-06-04 | 2025-07-01 | Hitachi High-Tech Corporation | Electron beam apparatus |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5777984B2 (ja) * | 2011-09-08 | 2015-09-16 | 株式会社日立ハイテクノロジーズ | 多極子測定装置 |
| EP2642279B1 (en) * | 2012-03-19 | 2015-07-01 | Universidad de Barcelona | Method and system for improving characteristic peak signals in analytical electron microscopy |
| US8921782B2 (en) * | 2012-11-30 | 2014-12-30 | Kla-Tencor Corporation | Tilt-imaging scanning electron microscope |
| US8993980B1 (en) * | 2013-10-22 | 2015-03-31 | Varian Semiconductor Equipment Associates, Inc. | Dual stage scanner for ion beam control |
| JP6340216B2 (ja) * | 2014-03-07 | 2018-06-06 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡 |
| JP2016115680A (ja) * | 2014-12-17 | 2016-06-23 | アプライド マテリアルズ イスラエル リミテッド | 収差補正開孔を有する走査型荷電粒子ビームデバイスおよびその動作方法 |
| WO2017193061A1 (en) * | 2016-05-06 | 2017-11-09 | Weiwei Xu | Miniature electron beam lens array use as common platform ebeam wafer metrology, imaging and material analysis system |
| US9859091B1 (en) * | 2016-06-20 | 2018-01-02 | International Business Machines Corporation | Automatic alignment for high throughput electron channeling contrast imaging |
| EP3343210B1 (en) * | 2016-12-30 | 2020-11-18 | IMEC vzw | Characterization of regions with different crystallinity in materials |
| DE102017220398B3 (de) * | 2017-11-15 | 2019-02-28 | Carl Zeiss Microscopy Gmbh | Verfahren zum Justieren eines Teilchenstrahlmikroskops |
| US11454596B2 (en) | 2018-01-31 | 2022-09-27 | Northwestern University | Orientation determination and mapping by stage rocking electron channeling and imaging reconstruction |
| US10714303B2 (en) * | 2018-07-19 | 2020-07-14 | International Business Machines Corporation | Enabling high throughput electron channeling contrast imaging (ECCI) by varying electron beam energy |
| US11953316B2 (en) * | 2020-09-17 | 2024-04-09 | Applied Materials Israel Ltd. | Geometry based three dimensional reconstruction of a semiconductor specimen by solving an optimization problem, using at least two SEM images acquired at different illumination angles |
| US12607579B2 (en) | 2023-09-29 | 2026-04-21 | Fei Company | Method and system for orientating a sample for inspection with charged particle microscopy |
Citations (8)
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| DE2102616A1 (de) * | 1970-01-21 | 1971-07-29 | Cambridge Scientific Instr Ltd | Elektronenstrahlgerat |
| US3801784A (en) * | 1972-04-14 | 1974-04-02 | Research Corp | Scanning electron microscope operating in area scan and angle scan modes |
| DE3703028A1 (de) * | 1987-02-02 | 1988-09-01 | Siemens Ag | Rastermikroskop |
| EP0451370A1 (en) | 1990-04-12 | 1991-10-16 | Koninklijke Philips Electronics N.V. | Correction system for a charged-particle beam apparatus |
| US5319207A (en) | 1991-09-04 | 1994-06-07 | Carl-Zeiss-Stiftung | Imaging system for charged particles |
| DE19860224A1 (de) * | 1998-03-24 | 1999-10-07 | Dresden Ev Inst Festkoerper | Verfahren zur Erzeugung von Echtzeit-Stereobildern von Werkstoffproben mittels Teilchenstrahl-Rastermikroskop |
| US6855939B2 (en) | 2001-02-20 | 2005-02-15 | Leo Elektronenmikroskopie Gmbh | Particle beam system having a mirror corrector |
| US7223983B2 (en) | 2004-08-10 | 2007-05-29 | Hitachi High-Technologies Corporation | Charged particle beam column |
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| DE1802450B1 (de) * | 1968-09-02 | 1970-07-02 | Siemens Ag | Verfahren zur Scharfstellung eines korpuskularstrahloptischen Bildes |
| US3802784A (en) * | 1972-02-16 | 1974-04-09 | Technical Operations Inc | Microdensitometer having linear response |
| US3914608A (en) * | 1973-12-19 | 1975-10-21 | Westinghouse Electric Corp | Rapid exposure of micropatterns with a scanning electron microscope |
| US4348576A (en) * | 1979-01-12 | 1982-09-07 | Steigerwald Strahltechnik Gmbh | Position regulation of a charge carrier beam |
| JPS58174857A (ja) | 1982-04-08 | 1983-10-13 | Yokogawa Hokushin Electric Corp | 直流光電圧計 |
| JPS58174857U (ja) * | 1982-05-17 | 1983-11-22 | 株式会社日立製作所 | 立体走査型電子顕微鏡 |
| US4663525A (en) * | 1985-07-08 | 1987-05-05 | Nanometrics Incorporated | Method for electron gun alignment in electron microscopes |
| JPS6251142A (ja) * | 1985-08-28 | 1987-03-05 | Hitachi Ltd | ビ−ムロツキング方法 |
| JPS6252838A (ja) * | 1985-08-30 | 1987-03-07 | Jeol Ltd | 走査電子顕微鏡 |
| DE3841715A1 (de) * | 1988-12-10 | 1990-06-13 | Zeiss Carl Fa | Abbildender korrektor vom wien-typ fuer elektronenmikroskope |
| US4990779A (en) * | 1989-06-06 | 1991-02-05 | Nippon Steel Corporation | Method and apparatus for evaluating strains in crystals |
| JPH0353441A (ja) * | 1989-07-21 | 1991-03-07 | Hitachi Ltd | エレクトロンチヤネリングパターンを得る方法および装置 |
| US5311028A (en) * | 1990-08-29 | 1994-05-10 | Nissin Electric Co., Ltd. | System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions |
| US5254857A (en) | 1991-05-31 | 1993-10-19 | Kachina Technologies, Inc. | Fast scanning electron microscope (FSEM) |
| DE19739290A1 (de) * | 1997-09-08 | 1999-03-11 | Ceos Gmbh | Verfahren zur Beseitigung axialer Bildfehler erster, zweiter und dritter Ordnung bei Korrektur des Öffnungsfehlers dritter Ordnung in elektronen-optischen Systemen |
| JP2000100364A (ja) * | 1998-09-25 | 2000-04-07 | Nikon Corp | 荷電粒子線転写装置 |
| DE69939309D1 (de) * | 1999-03-31 | 2008-09-25 | Advantest Corp | Teilchenstrahlgerät zur schrägen Beobachtung einer Probe |
| US6614026B1 (en) | 1999-04-15 | 2003-09-02 | Applied Materials, Inc. | Charged particle beam column |
| WO2001039243A1 (en) * | 1999-11-23 | 2001-05-31 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
| US6891167B2 (en) * | 2000-06-15 | 2005-05-10 | Kla-Tencor Technologies | Apparatus and method for applying feedback control to a magnetic lens |
| WO2002013227A1 (en) * | 2000-07-27 | 2002-02-14 | Ebara Corporation | Sheet beam test apparatus |
| JP4738610B2 (ja) * | 2001-03-02 | 2011-08-03 | 株式会社トプコン | 基板表面の汚染評価方法及び汚染評価装置と半導体装置の製造方法 |
| JP3914750B2 (ja) * | 2001-11-20 | 2007-05-16 | 日本電子株式会社 | 収差補正装置を備えた荷電粒子線装置 |
| JP3953309B2 (ja) | 2001-12-04 | 2007-08-08 | 株式会社トプコン | 走査電子顕微鏡装置 |
| DE10159454B4 (de) | 2001-12-04 | 2012-08-02 | Carl Zeiss Nts Gmbh | Korrektor zur Korrektion von Farbfehlern erster Ordnung, ersten Grades |
| KR100450674B1 (ko) * | 2002-03-12 | 2004-10-01 | 삼성전자주식회사 | 포토 마스크, 그 제조 방법 및 이를 이용한 웨이퍼 노광설비의 광학적 특성을 공정 중에 측정하는 방법 |
| JP2004214060A (ja) * | 2003-01-06 | 2004-07-29 | Hitachi High-Technologies Corp | 走査電子顕微鏡及びそれを用いた試料観察方法 |
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| JP4781211B2 (ja) * | 2006-09-25 | 2011-09-28 | 株式会社荏原製作所 | 電子線装置及びこれを用いたパターン評価方法 |
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-
2009
- 2009-11-09 DE DE200910052392 patent/DE102009052392A1/de not_active Ceased
-
2010
- 2010-11-09 EP EP10014424.5A patent/EP2320217B1/en active Active
- 2010-11-09 US US12/942,477 patent/US9093246B2/en active Active
- 2010-11-09 JP JP2010250911A patent/JP5819054B2/ja active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2102616A1 (de) * | 1970-01-21 | 1971-07-29 | Cambridge Scientific Instr Ltd | Elektronenstrahlgerat |
| US3801784A (en) * | 1972-04-14 | 1974-04-02 | Research Corp | Scanning electron microscope operating in area scan and angle scan modes |
| DE3703028A1 (de) * | 1987-02-02 | 1988-09-01 | Siemens Ag | Rastermikroskop |
| EP0451370A1 (en) | 1990-04-12 | 1991-10-16 | Koninklijke Philips Electronics N.V. | Correction system for a charged-particle beam apparatus |
| US5319207A (en) | 1991-09-04 | 1994-06-07 | Carl-Zeiss-Stiftung | Imaging system for charged particles |
| DE19860224A1 (de) * | 1998-03-24 | 1999-10-07 | Dresden Ev Inst Festkoerper | Verfahren zur Erzeugung von Echtzeit-Stereobildern von Werkstoffproben mittels Teilchenstrahl-Rastermikroskop |
| US6855939B2 (en) | 2001-02-20 | 2005-02-15 | Leo Elektronenmikroskopie Gmbh | Particle beam system having a mirror corrector |
| US7223983B2 (en) | 2004-08-10 | 2007-05-29 | Hitachi High-Technologies Corporation | Charged particle beam column |
Non-Patent Citations (1)
| Title |
|---|
| Kapitel 9.2 in L. Reimer, "Scanning Electron Microscopy", Springer-Verlag, 1998, Seiten 359 bis 378 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112011104595B4 (de) * | 2011-01-25 | 2015-10-01 | Hitachi High-Technologies Corporation | Vorrichtung mit einem geladenen Teilchenstrahl sowie Verfahren zur Steuerung |
| US10910194B2 (en) | 2016-01-29 | 2021-02-02 | Hitachi High-Tech Corporation | Charged particle beam device and optical-axis adjusting method thereof |
| DE112016005577B4 (de) | 2016-01-29 | 2021-09-16 | Hitachi High-Tech Corporation | Ladungsträgerstrahlvorrichtung und Verfahren zur Einstellung ihrer optischen Achse |
| US12347640B2 (en) | 2018-06-04 | 2025-07-01 | Hitachi High-Tech Corporation | Electron beam apparatus |
| DE102021132340A1 (de) | 2021-12-08 | 2023-06-15 | Carl Zeiss Microscopy Gmbh | Verfahren des Erzeugens einer Kristallorientierungskarte eines Oberflächenabschnitts einer Probe und Computerprogrammprodukt |
| US12394588B2 (en) | 2021-12-08 | 2025-08-19 | Carl Zeiss Microscopy Gmbh | Method of generating a crystalline orientation map of a surface portion of a sample and computer program product |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2320217B1 (en) | 2019-02-13 |
| EP2320217A2 (en) | 2011-05-11 |
| JP2011100733A (ja) | 2011-05-19 |
| JP5819054B2 (ja) | 2015-11-18 |
| US20110108736A1 (en) | 2011-05-12 |
| EP2320217A8 (en) | 2011-07-13 |
| EP2320217A3 (en) | 2015-01-07 |
| US9093246B2 (en) | 2015-07-28 |
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| R016 | Response to examination communication | ||
| R082 | Change of representative |
Representative=s name: DIEHL & PARTNER GBR, DE |
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| R081 | Change of applicant/patentee |
Owner name: CARL ZEISS MICROSCOPY GMBH, DE Free format text: FORMER OWNER: CARL ZEISS NTS GMBH, 73447 OBERKOCHEN, DE Effective date: 20130319 |
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| R082 | Change of representative |
Representative=s name: PATENT- UND RECHTSANWAELTE DIEHL & PARTNER GBR, DE Effective date: 20130319 Representative=s name: DIEHL & PARTNER GBR, DE Effective date: 20130319 |
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| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |