DE102009045208A1 - Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes - Google Patents
Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes Download PDFInfo
- Publication number
- DE102009045208A1 DE102009045208A1 DE102009045208A DE102009045208A DE102009045208A1 DE 102009045208 A1 DE102009045208 A1 DE 102009045208A1 DE 102009045208 A DE102009045208 A DE 102009045208A DE 102009045208 A DE102009045208 A DE 102009045208A DE 102009045208 A1 DE102009045208 A1 DE 102009045208A1
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- DE
- Germany
- Prior art keywords
- layers
- layer
- thermoelectric
- starting
- main group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 claims description 16
- 229910052797 bismuth Inorganic materials 0.000 claims description 11
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 9
- 230000000737 periodic effect Effects 0.000 claims description 9
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 124
- 230000007704 transition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229940125810 compound 20 Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- JAXFJECJQZDFJS-XHEPKHHKSA-N gtpl8555 Chemical compound OC(=O)C[C@H](N)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@@H]1C(=O)N[C@H](B1O[C@@]2(C)[C@H]3C[C@H](C3(C)C)C[C@H]2O1)CCC1=CC=C(F)C=C1 JAXFJECJQZDFJS-XHEPKHHKSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 description 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
- Powder Metallurgy (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009045208A DE102009045208A1 (de) | 2009-09-30 | 2009-09-30 | Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes |
| JP2012531403A JP2013506981A (ja) | 2009-09-30 | 2010-09-29 | 熱電構造体の製造方法と熱電構造体 |
| PCT/EP2010/064433 WO2011039240A2 (de) | 2009-09-30 | 2010-09-29 | Verfahren zum herstellen eines thermoelektrischen bauelementes und thermoelektrisches bauelement |
| US13/498,863 US20130068274A1 (en) | 2009-09-30 | 2010-09-29 | Method for producing a thermoelectric component and thermoelectric component |
| EP10771687A EP2483940A2 (de) | 2009-09-30 | 2010-09-29 | Verfahren zum herstellen eines thermoelektrischen bauelementes und thermoelektrisches bauelement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009045208A DE102009045208A1 (de) | 2009-09-30 | 2009-09-30 | Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102009045208A1 true DE102009045208A1 (de) | 2011-04-14 |
Family
ID=43630009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102009045208A Withdrawn DE102009045208A1 (de) | 2009-09-30 | 2009-09-30 | Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20130068274A1 (https=) |
| EP (1) | EP2483940A2 (https=) |
| JP (1) | JP2013506981A (https=) |
| DE (1) | DE102009045208A1 (https=) |
| WO (1) | WO2011039240A2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9516790B2 (en) | 2013-04-09 | 2016-12-06 | Harman Becker Automotive Systems Gmbh | Thermoelectric cooler/heater integrated in printed circuit board |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2887409B1 (en) | 2013-12-17 | 2016-06-15 | Airbus Defence and Space GmbH | Micromachined energy harvester with a thermoelectric generator and method for manufacturing the same |
| JP6730597B2 (ja) * | 2016-07-12 | 2020-07-29 | 富士通株式会社 | 熱電変換材料及び熱電変換装置 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6060657A (en) * | 1998-06-24 | 2000-05-09 | Massachusetts Institute Of Technology | Lead-chalcogenide superlattice structures |
| US6300150B1 (en) | 1997-03-31 | 2001-10-09 | Research Triangle Institute | Thin-film thermoelectric device and fabrication method of same |
| US20030230332A1 (en) * | 2002-04-15 | 2003-12-18 | Research Triangle Institute | Thermoelectric device utilizing double-sided peltier junctions and method of making the device |
| US20040221792A1 (en) * | 2003-05-07 | 2004-11-11 | Micron Technology, Inc. | Strained Si/SiGe structures by ion implantation |
| US20070028956A1 (en) * | 2005-04-12 | 2007-02-08 | Rama Venkatasubramanian | Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices |
| US7514726B2 (en) * | 2006-03-21 | 2009-04-07 | The United States Of America As Represented By The Aministrator Of The National Aeronautics And Space Administration | Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3526699B2 (ja) * | 1996-07-16 | 2004-05-17 | 本田技研工業株式会社 | 熱電材料 |
| WO2000030185A1 (en) * | 1998-11-13 | 2000-05-25 | Hi-Z Technology, Inc. | Quantum well thermoelectric material on very thin substrate |
| US6096964A (en) * | 1998-11-13 | 2000-08-01 | Hi-Z Technology, Inc. | Quantum well thermoelectric material on thin flexible substrate |
| KR100465661B1 (ko) * | 1999-06-02 | 2005-01-13 | 아사히 가세이 가부시키가이샤 | 열전 재료 및 그 제조 방법 |
-
2009
- 2009-09-30 DE DE102009045208A patent/DE102009045208A1/de not_active Withdrawn
-
2010
- 2010-09-29 WO PCT/EP2010/064433 patent/WO2011039240A2/de not_active Ceased
- 2010-09-29 US US13/498,863 patent/US20130068274A1/en not_active Abandoned
- 2010-09-29 EP EP10771687A patent/EP2483940A2/de not_active Withdrawn
- 2010-09-29 JP JP2012531403A patent/JP2013506981A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6300150B1 (en) | 1997-03-31 | 2001-10-09 | Research Triangle Institute | Thin-film thermoelectric device and fabrication method of same |
| US6060657A (en) * | 1998-06-24 | 2000-05-09 | Massachusetts Institute Of Technology | Lead-chalcogenide superlattice structures |
| US20030230332A1 (en) * | 2002-04-15 | 2003-12-18 | Research Triangle Institute | Thermoelectric device utilizing double-sided peltier junctions and method of making the device |
| US20040221792A1 (en) * | 2003-05-07 | 2004-11-11 | Micron Technology, Inc. | Strained Si/SiGe structures by ion implantation |
| US20070028956A1 (en) * | 2005-04-12 | 2007-02-08 | Rama Venkatasubramanian | Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices |
| US7514726B2 (en) * | 2006-03-21 | 2009-04-07 | The United States Of America As Represented By The Aministrator Of The National Aeronautics And Space Administration | Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9516790B2 (en) | 2013-04-09 | 2016-12-06 | Harman Becker Automotive Systems Gmbh | Thermoelectric cooler/heater integrated in printed circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011039240A2 (de) | 2011-04-07 |
| WO2011039240A3 (de) | 2011-08-11 |
| US20130068274A1 (en) | 2013-03-21 |
| JP2013506981A (ja) | 2013-02-28 |
| EP2483940A2 (de) | 2012-08-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| R082 | Change of representative |
Representative=s name: MAIKOWSKI & NINNEMANN PATENTANWAELTE, DE |
|
| R081 | Change of applicant/patentee |
Owner name: MICROPATENT B.V., NL Free format text: FORMER OWNER: MICROPELT GMBH, 79110 FREIBURG, DE Effective date: 20141217 |
|
| R082 | Change of representative |
Representative=s name: MAIKOWSKI & NINNEMANN PATENTANWAELTE, DE Effective date: 20141217 Representative=s name: MAIKOWSKI & NINNEMANN PATENTANWAELTE PARTNERSC, DE Effective date: 20141217 |
|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |