AU1723800A - Quantum well thermoelectric material on very thin substrate - Google Patents

Quantum well thermoelectric material on very thin substrate

Info

Publication number
AU1723800A
AU1723800A AU17238/00A AU1723800A AU1723800A AU 1723800 A AU1723800 A AU 1723800A AU 17238/00 A AU17238/00 A AU 17238/00A AU 1723800 A AU1723800 A AU 1723800A AU 1723800 A AU1723800 A AU 1723800A
Authority
AU
Australia
Prior art keywords
quantum well
thermoelectric material
thin substrate
well thermoelectric
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU17238/00A
Inventor
Norbert B. Elsner
Saeid Ghamaty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hi Z Technology Inc
Original Assignee
Hi Z Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/192,098 external-priority patent/US6096965A/en
Priority claimed from US09/192,097 external-priority patent/US6096964A/en
Application filed by Hi Z Technology Inc filed Critical Hi Z Technology Inc
Publication of AU1723800A publication Critical patent/AU1723800A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/857Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/855Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
AU17238/00A 1998-11-13 1999-11-12 Quantum well thermoelectric material on very thin substrate Abandoned AU1723800A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US09192098 1998-11-13
US09/192,098 US6096965A (en) 1998-11-13 1998-11-13 Quantum well thermoelectric material on organic substrate
US09/192,097 US6096964A (en) 1998-11-13 1998-11-13 Quantum well thermoelectric material on thin flexible substrate
US09192097 1998-11-13
PCT/US1999/026996 WO2000030185A1 (en) 1998-11-13 1999-11-12 Quantum well thermoelectric material on very thin substrate

Publications (1)

Publication Number Publication Date
AU1723800A true AU1723800A (en) 2000-06-05

Family

ID=26887722

Family Applications (1)

Application Number Title Priority Date Filing Date
AU17238/00A Abandoned AU1723800A (en) 1998-11-13 1999-11-12 Quantum well thermoelectric material on very thin substrate

Country Status (4)

Country Link
EP (1) EP1155460A4 (en)
JP (1) JP4903307B2 (en)
AU (1) AU1723800A (en)
WO (1) WO2000030185A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1629539B1 (en) * 2003-05-23 2008-07-30 Koninklijke Philips Electronics N.V. Method of manufacturing a thermoelectric device
WO2006001827A2 (en) 2003-12-02 2006-01-05 Battelle Memorial Institute Thermoelectric devices and applications for the same
US8455751B2 (en) 2003-12-02 2013-06-04 Battelle Memorial Institute Thermoelectric devices and applications for the same
US7834263B2 (en) 2003-12-02 2010-11-16 Battelle Memorial Institute Thermoelectric power source utilizing ambient energy harvesting for remote sensing and transmitting
US7851691B2 (en) 2003-12-02 2010-12-14 Battelle Memorial Institute Thermoelectric devices and applications for the same
US6987329B1 (en) * 2004-08-03 2006-01-17 Harris Corporation Fuel flexible thermoelectric micro-generator with micro-turbine
US7767564B2 (en) 2005-12-09 2010-08-03 Zt3 Technologies, Inc. Nanowire electronic devices and method for producing the same
US7559215B2 (en) 2005-12-09 2009-07-14 Zt3 Technologies, Inc. Methods of drawing high density nanowire arrays in a glassy matrix
US8658880B2 (en) 2005-12-09 2014-02-25 Zt3 Technologies, Inc. Methods of drawing wire arrays
US20080000880A1 (en) * 2006-06-30 2008-01-03 Bao Feng System and method for treating a coating on a substrate
US20080017238A1 (en) * 2006-07-21 2008-01-24 Caterpillar Inc. Thermoelectric device
US20090084421A1 (en) * 2007-09-28 2009-04-02 Battelle Memorial Institute Thermoelectric devices
CN102149845A (en) * 2008-07-11 2011-08-10 法国原子能与替代能源委员会 SiGe matrix nanocomposite materials with an improved thermoelectric figure of merit
CN101521259B (en) * 2009-01-20 2010-09-15 深圳大学 Thin film temperature difference battery and manufacture method thereof
FR2946798B1 (en) * 2009-06-12 2011-10-28 Commissariat Energie Atomique MICRO-STRUCTURE FOR THERMOELECTRIC GENERATOR WITH SEEBECK EFFECT AND METHOD FOR MANUFACTURING SUCH MICROSTRUCTURE
DE102009045208A1 (en) * 2009-09-30 2011-04-14 Micropelt Gmbh Thermoelectric component and method for producing a thermoelectric component
US8779276B2 (en) * 2011-07-14 2014-07-15 Sony Corporation Thermoelectric device
WO2013119293A2 (en) * 2011-11-22 2013-08-15 Research Triangle Institute Nanoscale, ultra-thin films for excellent thermoelectric figure of merit
CN111816753B (en) * 2019-06-18 2022-07-12 桂林电子科技大学 Preparation method of paper substrate bismuth telluride-based nanowire flexible thermocouple type temperature sensor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415699A (en) * 1993-01-12 1995-05-16 Massachusetts Institute Of Technology Superlattice structures particularly suitable for use as thermoelectric cooling materials
US5550387A (en) * 1994-01-24 1996-08-27 Hi-Z Corporation Superlattice quantum well material
US5436467A (en) * 1994-01-24 1995-07-25 Elsner; Norbert B. Superlattice quantum well thermoelectric material
JPH09107129A (en) * 1995-10-09 1997-04-22 Sharp Corp Semiconductor device and its manufacturing method
DE29723309U1 (en) * 1997-03-06 1998-09-10 D T S Ges Zur Fertigung Von Du Compact low-power thermogenerator
US6060656A (en) * 1997-03-17 2000-05-09 Regents Of The University Of California Si/SiGe superlattice structures for use in thermoelectric devices
AU6783598A (en) * 1997-03-31 1998-10-22 Research Triangle Institute Thin-film thermoelectric device and fabrication method of same
JPH11274581A (en) * 1998-03-26 1999-10-08 Toshiba Corp Thermoelectric conversion element and manufacture thereof

Also Published As

Publication number Publication date
WO2000030185A8 (en) 2000-09-21
EP1155460A1 (en) 2001-11-21
WO2000030185A1 (en) 2000-05-25
JP4903307B2 (en) 2012-03-28
EP1155460A4 (en) 2006-12-06
JP2002530874A (en) 2002-09-17

Similar Documents

Publication Publication Date Title
AU1723800A (en) Quantum well thermoelectric material on very thin substrate
AU3664899A (en) Substrate sensor
AU5104700A (en) Thermoelectric material and method for manufacturing the same
AU6924300A (en) Improved thermoelectric material system
AU8751098A (en) Thermoelectric device
AU9373598A (en) Thermally conductive polytetrafluoroethylene article
AU5968398A (en) Surface emitting semiconductor laser
AU5892000A (en) Thin film thermocouple
AU4125999A (en) Fast luminescent silicon
AUPP505798A0 (en) Novel compound fr225497 substance
AU1887099A (en) Multiple layer wipe
AU5684799A (en) Substrate transport apparatus
AU3000899A (en) Two-sided imaging material
AU6145198A (en) Semiconductor particle electroluminescent display
EP0953460A3 (en) Transfer substrate and transfer seal
AU6493698A (en) Semiconductor quantum oscillation device
AU1738700A (en) Slotted quantum well sensor
AU2001277825A1 (en) Ceramic material based on bismuth niobate substituted with zinc
AU4661999A (en) Thermoelectric device
AU6484998A (en) Heat-resisting material
AU6338099A (en) Colour photographic material
AU7235898A (en) Dielectric thin film element and process for manufacturing the same
AU3942499A (en) Providing decoration on a substrate
AU4951799A (en) Cryptographic key-recovery mechanism
AU5692799A (en) Implement transport

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase