DE102009019524B4 - Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem - Google Patents

Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem Download PDF

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Publication number
DE102009019524B4
DE102009019524B4 DE102009019524.6A DE102009019524A DE102009019524B4 DE 102009019524 B4 DE102009019524 B4 DE 102009019524B4 DE 102009019524 A DE102009019524 A DE 102009019524A DE 102009019524 B4 DE102009019524 B4 DE 102009019524B4
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DE
Germany
Prior art keywords
layer
adhesion
radiation
transmissive
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102009019524.6A
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German (de)
English (en)
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DE102009019524A1 (de
Inventor
Robert Walter
Dr. Grolier Vincent
Michael Schmal
Korbinian Perzlmaier
Dr. Eberhard Franz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102009019524.6A priority Critical patent/DE102009019524B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to KR1020117028382A priority patent/KR101689413B1/ko
Priority to PCT/EP2010/055546 priority patent/WO2010125028A2/de
Priority to CN201080018792.5A priority patent/CN102414826B/zh
Priority to US13/255,341 priority patent/US9012940B2/en
Priority to JP2012507708A priority patent/JP2012525693A/ja
Priority to TW099113404A priority patent/TW201101535A/zh
Publication of DE102009019524A1 publication Critical patent/DE102009019524A1/de
Application granted granted Critical
Publication of DE102009019524B4 publication Critical patent/DE102009019524B4/de
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations
    • H10F77/63—Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Photovoltaic Devices (AREA)
DE102009019524.6A 2009-04-30 2009-04-30 Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem Active DE102009019524B4 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE102009019524.6A DE102009019524B4 (de) 2009-04-30 2009-04-30 Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem
PCT/EP2010/055546 WO2010125028A2 (de) 2009-04-30 2010-04-26 Optoelektronischer halbleiterkörper mit einem reflektierenden schichtsystem
CN201080018792.5A CN102414826B (zh) 2009-04-30 2010-04-26 具有反射层系统的光电子半导体本体
US13/255,341 US9012940B2 (en) 2009-04-30 2010-04-26 Optoelectronic semiconductor bodies having a reflective layer system
KR1020117028382A KR101689413B1 (ko) 2009-04-30 2010-04-26 반사 층시스템을 포함한 광전 반도체 몸체
JP2012507708A JP2012525693A (ja) 2009-04-30 2010-04-26 反射層系を備えたオプトエレクトロニクス半導体
TW099113404A TW201101535A (en) 2009-04-30 2010-04-28 Optoelectronic semiconductor body with a reflecting layer system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009019524.6A DE102009019524B4 (de) 2009-04-30 2009-04-30 Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem

Publications (2)

Publication Number Publication Date
DE102009019524A1 DE102009019524A1 (de) 2010-11-04
DE102009019524B4 true DE102009019524B4 (de) 2023-07-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102009019524.6A Active DE102009019524B4 (de) 2009-04-30 2009-04-30 Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem

Country Status (7)

Country Link
US (1) US9012940B2 (enrdf_load_stackoverflow)
JP (1) JP2012525693A (enrdf_load_stackoverflow)
KR (1) KR101689413B1 (enrdf_load_stackoverflow)
CN (1) CN102414826B (enrdf_load_stackoverflow)
DE (1) DE102009019524B4 (enrdf_load_stackoverflow)
TW (1) TW201101535A (enrdf_load_stackoverflow)
WO (1) WO2010125028A2 (enrdf_load_stackoverflow)

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* Cited by examiner, † Cited by third party
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JP2014139997A (ja) * 2013-01-21 2014-07-31 Rohm Co Ltd 発光素子および発光素子パッケージ
DE102015107657A1 (de) * 2015-05-15 2016-12-01 Alanod Gmbh & Co. Kg Verfahren zur Herstellung eines Anschlussträgers, Anschlussträger sowie optoelektronisches Halbleiterbauteil mit einem Anschlussträger
JP6806446B2 (ja) * 2016-01-25 2021-01-06 日亜化学工業株式会社 半導体素子及びその製造方法
JP6892909B2 (ja) * 2017-11-16 2021-06-23 ローム株式会社 発光素子および発光素子パッケージ
JP2018026597A (ja) * 2017-11-16 2018-02-15 ローム株式会社 発光素子および発光素子パッケージ
DE102018107673A1 (de) * 2018-03-15 2019-09-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Herstellungsverfahren für einen optoelektronischen Halbleiterchip
US12113279B2 (en) 2020-09-22 2024-10-08 Oti Lumionics Inc. Device incorporating an IR signal transmissive region
JP2023545390A (ja) * 2020-10-09 2023-10-30 オーティーアイ ルミオニクス インコーポレーテッド 低い屈折率の被膜及び放射線修正層を含むデバイス
CA3240373A1 (en) 2020-12-07 2022-06-16 Michael HELANDER Patterning a conductive deposited layer using a nucleation inhibiting coating and an underlying metallic coating
CN114141924B (zh) * 2021-11-19 2023-08-11 厦门市三安光电科技有限公司 发光二极管及其制备方法
DE102023106511A1 (de) 2023-03-15 2024-09-19 Ams-Osram International Gmbh Optoelektronischer Halbleiterchip mit reflektierendem Schichtsystem

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2007258276A (ja) 2006-03-20 2007-10-04 Matsushita Electric Works Ltd 半導体発光素子
DE102007043181A1 (de) 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008021403A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

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DE19640240A1 (de) * 1996-09-30 1998-04-02 Siemens Ag Halbleiteranordnung mit einer Schicht aus einem Edelmetall und Verfahren zum Herstellen derselben
US6587263B1 (en) * 2000-03-31 2003-07-01 Lockheed Martin Corporation Optical solar reflectors
US20050040410A1 (en) * 2002-02-12 2005-02-24 Nl-Nanosemiconductor Gmbh Tilted cavity semiconductor optoelectronic device and method of making same
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DE102004040277B4 (de) 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
CN100442557C (zh) 2004-06-30 2008-12-10 奥斯兰姆奥普托半导体有限责任公司 用于施加到ⅲ/ⅴ化合物半导体材料上的具有多个层的反射层系统
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JP2007258276A (ja) 2006-03-20 2007-10-04 Matsushita Electric Works Ltd 半導体発光素子
DE102007043181A1 (de) 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008021403A1 (de) 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
WO2010125028A2 (de) 2010-11-04
KR101689413B1 (ko) 2016-12-23
TW201101535A (en) 2011-01-01
DE102009019524A1 (de) 2010-11-04
KR20120030394A (ko) 2012-03-28
US20120049228A1 (en) 2012-03-01
JP2012525693A (ja) 2012-10-22
CN102414826B (zh) 2017-04-26
CN102414826A (zh) 2012-04-11
WO2010125028A3 (de) 2011-04-07
US9012940B2 (en) 2015-04-21

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