DE102008036143A1 - Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium - Google Patents

Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium Download PDF

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Publication number
DE102008036143A1
DE102008036143A1 DE102008036143A DE102008036143A DE102008036143A1 DE 102008036143 A1 DE102008036143 A1 DE 102008036143A1 DE 102008036143 A DE102008036143 A DE 102008036143A DE 102008036143 A DE102008036143 A DE 102008036143A DE 102008036143 A1 DE102008036143 A1 DE 102008036143A1
Authority
DE
Germany
Prior art keywords
silicon
halide
containing silicon
melt
metallurgical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008036143A
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German (de)
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CaliSolar GmbH
Spawnt Private SARL
Original Assignee
REV RENEWABLE ENERGY VENTURES Inc
BerlinSolar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by REV RENEWABLE ENERGY VENTURES Inc, BerlinSolar GmbH filed Critical REV RENEWABLE ENERGY VENTURES Inc
Priority to DE102008036143A priority Critical patent/DE102008036143A1/de
Priority to PCT/DE2009/001059 priority patent/WO2010012273A2/de
Priority to EP09771469.5A priority patent/EP2321220B1/de
Priority to US13/057,084 priority patent/US9327987B2/en
Priority to JP2011520323A priority patent/JP5635985B2/ja
Publication of DE102008036143A1 publication Critical patent/DE102008036143A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE102008036143A 2008-08-01 2008-08-01 Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium Withdrawn DE102008036143A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102008036143A DE102008036143A1 (de) 2008-08-01 2008-08-01 Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium
PCT/DE2009/001059 WO2010012273A2 (de) 2008-08-01 2009-07-29 Verfahren zum entfernen von nichtmetallischen verunreinigungen aus metallurgischem silicium
EP09771469.5A EP2321220B1 (de) 2008-08-01 2009-07-29 Verfahren zum entfernen von nichtmetallischen verunreinigungen aus metallurgischem silicium
US13/057,084 US9327987B2 (en) 2008-08-01 2009-07-29 Process for removing nonmetallic impurities from metallurgical silicon
JP2011520323A JP5635985B2 (ja) 2008-08-01 2009-07-29 金属ケイ素から非金属不純物を除去する方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008036143A DE102008036143A1 (de) 2008-08-01 2008-08-01 Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium

Publications (1)

Publication Number Publication Date
DE102008036143A1 true DE102008036143A1 (de) 2010-02-04

Family

ID=41461624

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008036143A Withdrawn DE102008036143A1 (de) 2008-08-01 2008-08-01 Verfahren zum Entfernen von nichtmetallischen Verunreinigungen aus metallurgischem Silicium

Country Status (5)

Country Link
US (1) US9327987B2 (https=)
EP (1) EP2321220B1 (https=)
JP (1) JP5635985B2 (https=)
DE (1) DE102008036143A1 (https=)
WO (1) WO2010012273A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9040009B2 (en) 2009-12-04 2015-05-26 Spawnt Private S.à.r.1. Kinetically stable chlorinated polysilanes and production thereof
CN113412237A (zh) * 2019-04-30 2021-09-17 瓦克化学股份公司 使用颗粒介质精炼粗硅熔体的方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12338127B2 (en) * 2019-04-30 2025-06-24 Wacker Chemie Ag Method for refining crude silicon melts using a particulate mediator
CN111675222B (zh) * 2020-07-13 2022-08-09 昆明理工大学 一种利用低品位硅石生产工业硅的方法
CN114720627A (zh) * 2022-04-06 2022-07-08 江苏南大光电材料股份有限公司 一种滴定检测硅前驱体中卤素相对含量方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4312849A (en) 1980-09-09 1982-01-26 Aluminum Company Of America Phosphorous removal in silicon purification
WO2006125425A1 (de) 2005-05-25 2006-11-30 Rev Renewable Energy Ventures Ag Verfahren zur herstellung von silicium aus halogensilanen
DE102008025263A1 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Verfahren zum Aufreinigen von metallurgischem Silicium

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GB702349A (en) 1950-07-08 1954-01-13 British Thomson Houston Co Ltd Improvements in and relating to the preparation of chloropolysilanes
BE536407A (https=) 1954-03-12
AT200106B (de) 1956-12-24 1958-10-25 Degussa Verfahren zur Herstellung von reinstem Silizium
DE2623413C2 (de) 1976-05-25 1985-01-10 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von für Halbleiterbauelemente verwendbarem Silicium
US4298423A (en) 1976-12-16 1981-11-03 Semix Incorporated Method of purifying silicon
FR2430917A1 (fr) 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
US4200621A (en) 1978-07-18 1980-04-29 Motorola, Inc. Sequential purification and crystal growth
US4374182A (en) 1980-07-07 1983-02-15 Dow Corning Corporation Preparation of silicon metal through polymer degradation
FR2530607B1 (fr) 1982-07-26 1985-06-28 Rhone Poulenc Spec Chim Silicium pur, en poudre dense et son procede de preparation
DE3504723A1 (de) 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum reinigen von silicium
JPS62289224A (ja) 1986-06-06 1987-12-16 Rikagaku Kenkyusho レ−ザ−を用いたシリコンを主成分とする固体生成物の製造法
EP0264722A3 (en) 1986-10-09 1989-07-12 Mitsubishi Materials Corporation Process for preparing amorphous silicon
JPS63225511A (ja) 1986-10-09 1988-09-20 Mitsubishi Metal Corp 非晶質シリコン粉末の製造方法
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
JPS63222011A (ja) 1987-03-11 1988-09-14 Mitsubishi Metal Corp 多結晶シリコンの製造方法
DE3727647A1 (de) 1987-08-19 1989-03-02 Bayer Ag Verfahren zur abtrennung von verunreinigungen aus silicium
JPH01197309A (ja) 1988-02-01 1989-08-09 Mitsubishi Metal Corp 粒状シリコンの製造方法
US5030536A (en) 1989-12-26 1991-07-09 Xerox Corporation Processes for restoring amorphous silicon imaging members
JP3037461B2 (ja) 1991-05-07 2000-04-24 キヤノン株式会社 光起電力素子
US5772728A (en) 1994-03-30 1998-06-30 Elkem Asa Method for upgrading of silicon-containing residues obtained after leaching of copper-containing residues from chlorosilane synthesis
NO180532C (no) 1994-09-01 1997-05-07 Elkem Materials Fremgangsmåte for fjerning av forurensninger fra smeltet silisium
DE19735378A1 (de) 1997-08-14 1999-02-18 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinem Siliciumgranulat
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EP1719736B1 (en) 2000-05-11 2010-08-11 Tokuyama Corporation Apparatus for producing polycrystalline silicon
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DE10124848A1 (de) 2001-05-22 2002-11-28 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium in einer Wirbelschicht
JP2005255417A (ja) 2002-03-18 2005-09-22 Sharp Corp シリコンの精製方法
US20060105105A1 (en) 2004-11-12 2006-05-18 Memc Electronic Materials, Inc. High purity granular silicon and method of manufacturing the same
JP4966560B2 (ja) * 2005-03-07 2012-07-04 新日鉄マテリアルズ株式会社 高純度シリコンの製造方法
WO2007127482A2 (en) 2006-04-28 2007-11-08 Sri International Methods for producing consolidated and purified materials
DE102006034061A1 (de) 2006-07-20 2008-01-24 REV Renewable Energy Ventures, Inc., Aloha Polysilanverarbeitung und Verwendung
CA2667999A1 (en) * 2006-09-29 2008-03-27 Shin-Etsu Chemical Co., Ltd. Method for purification of silicon, silicon, and solar cell
GB0623290D0 (en) * 2006-11-22 2007-01-03 Qinetiq Nanomaterials Ltd Purification method
DE102008025264A1 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Granulares Silicium
EP2300368B1 (de) 2008-05-27 2014-10-08 Spawnt Private S.à.r.l. Halogenidhaltiges silicium, verfahren zur herstellung desselben und verwendung desselben

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4312849A (en) 1980-09-09 1982-01-26 Aluminum Company Of America Phosphorous removal in silicon purification
WO2006125425A1 (de) 2005-05-25 2006-11-30 Rev Renewable Energy Ventures Ag Verfahren zur herstellung von silicium aus halogensilanen
DE102008025263A1 (de) 2008-05-27 2009-12-03 Rev Renewable Energy Ventures, Inc. Verfahren zum Aufreinigen von metallurgischem Silicium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9040009B2 (en) 2009-12-04 2015-05-26 Spawnt Private S.à.r.1. Kinetically stable chlorinated polysilanes and production thereof
US9139702B2 (en) 2009-12-04 2015-09-22 Spawnt Private S.A.R.L. Method for producing halogenated polysilanes
US9458294B2 (en) 2009-12-04 2016-10-04 Spawnt Private S.À.R.L. Method for removing impurities from silicon
CN113412237A (zh) * 2019-04-30 2021-09-17 瓦克化学股份公司 使用颗粒介质精炼粗硅熔体的方法
CN113412237B (zh) * 2019-04-30 2024-06-07 瓦克化学股份公司 使用颗粒介质精炼粗硅熔体的方法

Also Published As

Publication number Publication date
JP2011529841A (ja) 2011-12-15
EP2321220A2 (de) 2011-05-18
WO2010012273A2 (de) 2010-02-04
EP2321220B1 (de) 2016-04-20
US9327987B2 (en) 2016-05-03
US20130171052A1 (en) 2013-07-04
JP5635985B2 (ja) 2014-12-03
WO2010012273A3 (de) 2010-11-18

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Legal Events

Date Code Title Description
R082 Change of representative

Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCH, DE

Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCHAFT

R081 Change of applicant/patentee

Owner name: SPAWNT PRIVATE S.A.R.L., LU

Free format text: FORMER OWNER: BERLINSOLAR GMBH, REV RENEWABLE ENERGY VENTURES,, , CH

Effective date: 20111025

Owner name: BERLINSOLAR GMBH, DE

Free format text: FORMER OWNER: BERLINSOLAR GMBH, REV RENEWABLE ENERGY VENTURES,, , CH

Effective date: 20111025

Owner name: BERLINSOLAR GMBH, DE

Free format text: FORMER OWNERS: BERLINSOLAR GMBH, 12489 BERLIN, DE; REV RENEWABLE ENERGY VENTURES, INC., ZUG, CH

Effective date: 20111025

Owner name: SPAWNT PRIVATE S.A.R.L., LU

Free format text: FORMER OWNERS: BERLINSOLAR GMBH, 12489 BERLIN, DE; REV RENEWABLE ENERGY VENTURES, INC., ZUG, CH

Effective date: 20111025

R082 Change of representative

Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCH, DE

Effective date: 20111025

R005 Application deemed withdrawn due to failure to request examination