DE102008012859B4 - Laserlichtquelle mit einer Filterstruktur - Google Patents

Laserlichtquelle mit einer Filterstruktur Download PDF

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Publication number
DE102008012859B4
DE102008012859B4 DE102008012859.7A DE102008012859A DE102008012859B4 DE 102008012859 B4 DE102008012859 B4 DE 102008012859B4 DE 102008012859 A DE102008012859 A DE 102008012859A DE 102008012859 B4 DE102008012859 B4 DE 102008012859B4
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DE
Germany
Prior art keywords
filter element
electromagnetic radiation
light source
laser light
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102008012859.7A
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German (de)
English (en)
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DE102008012859A1 (de
Inventor
Alfred Lell
Dr. Schmid Wolfgang
Christoph Eichler
Dr. Tautz Sönke
Wolfgang Reill
Dr. Dini Dimitri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102008012859.7A priority Critical patent/DE102008012859B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US12/809,748 priority patent/US8369370B2/en
Priority to CN2008801272114A priority patent/CN101946378B/zh
Priority to KR1020167005096A priority patent/KR101668218B1/ko
Priority to KR1020157002077A priority patent/KR101580436B1/ko
Priority to KR1020107016285A priority patent/KR101600633B1/ko
Priority to EP08865674.9A priority patent/EP2223397B1/de
Priority to CN201310049689.2A priority patent/CN103107481B/zh
Priority to PCT/DE2008/002127 priority patent/WO2009080012A1/de
Priority to US13/730,363 priority patent/US8964808B2/en
Priority to JP2010538338A priority patent/JP2011507289A/ja
Publication of DE102008012859A1 publication Critical patent/DE102008012859A1/de
Priority to JP2015026613A priority patent/JP6033902B2/ja
Priority to US14/627,895 priority patent/US9407063B2/en
Priority to US14/951,096 priority patent/US9531158B2/en
Priority to US14/951,149 priority patent/US9559496B2/en
Priority to US14/951,220 priority patent/US9559497B2/en
Priority to JP2016209662A priority patent/JP2017017365A/ja
Application granted granted Critical
Publication of DE102008012859B4 publication Critical patent/DE102008012859B4/de
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0286—Coatings with a reflectivity that is not constant over the facets, e.g. apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1078—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with means to control the spontaneous emission, e.g. reducing or reinjection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Filters (AREA)
DE102008012859.7A 2007-12-21 2008-03-06 Laserlichtquelle mit einer Filterstruktur Active DE102008012859B4 (de)

Priority Applications (17)

Application Number Priority Date Filing Date Title
DE102008012859.7A DE102008012859B4 (de) 2007-12-21 2008-03-06 Laserlichtquelle mit einer Filterstruktur
CN2008801272114A CN101946378B (zh) 2007-12-21 2008-12-17 激光源和用于制造激光源的方法
KR1020167005096A KR101668218B1 (ko) 2007-12-21 2008-12-17 레이저 광원 및 레이저 광원의 제조 방법
KR1020157002077A KR101580436B1 (ko) 2007-12-21 2008-12-17 레이저 광원 및 레이저 광원의 제조 방법
KR1020107016285A KR101600633B1 (ko) 2007-12-21 2008-12-17 레이저 광원 및 레이저 광원의 제조 방법
EP08865674.9A EP2223397B1 (de) 2007-12-21 2008-12-17 Laserlichtquelle und verfahren zur herstellung einer laserlichtquelle
CN201310049689.2A CN103107481B (zh) 2007-12-21 2008-12-17 激光源
PCT/DE2008/002127 WO2009080012A1 (de) 2007-12-21 2008-12-17 Laserlichtquelle und verfahren zur herstellung einer laserlichtquelle
US12/809,748 US8369370B2 (en) 2007-12-21 2008-12-17 Laser light source and method for producing a laser light source
US13/730,363 US8964808B2 (en) 2007-12-21 2008-12-17 Laser light source and method for producing a laser light source
JP2010538338A JP2011507289A (ja) 2007-12-21 2008-12-17 レーザー光源及び該レーザー光源の製造方法
JP2015026613A JP6033902B2 (ja) 2007-12-21 2015-02-13 レーザー光源
US14/627,895 US9407063B2 (en) 2007-12-21 2015-02-20 Laser light source and method for producing a laser light source
US14/951,096 US9531158B2 (en) 2007-12-21 2015-11-24 Laser light source
US14/951,149 US9559496B2 (en) 2007-12-21 2015-11-24 Laser light source
US14/951,220 US9559497B2 (en) 2007-12-21 2015-11-24 Laser light source
JP2016209662A JP2017017365A (ja) 2007-12-21 2016-10-26 レーザー光源及び該レーザー光源の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007061923.7 2007-12-21
DE102007061923 2007-12-21
DE102008012859.7A DE102008012859B4 (de) 2007-12-21 2008-03-06 Laserlichtquelle mit einer Filterstruktur

Publications (2)

Publication Number Publication Date
DE102008012859A1 DE102008012859A1 (de) 2009-11-19
DE102008012859B4 true DE102008012859B4 (de) 2023-10-05

Family

ID=40590023

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008012859.7A Active DE102008012859B4 (de) 2007-12-21 2008-03-06 Laserlichtquelle mit einer Filterstruktur

Country Status (7)

Country Link
US (6) US8369370B2 (enExample)
EP (1) EP2223397B1 (enExample)
JP (3) JP2011507289A (enExample)
KR (3) KR101580436B1 (enExample)
CN (2) CN103107481B (enExample)
DE (1) DE102008012859B4 (enExample)
WO (1) WO2009080012A1 (enExample)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8767787B1 (en) 2008-07-14 2014-07-01 Soraa Laser Diode, Inc. Integrated laser diodes with quality facets on GaN substrates
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
JP2011530194A (ja) 2008-08-04 2011-12-15 ソラア インコーポレーテッド 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
DE102008058436B4 (de) 2008-11-21 2019-03-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US9531164B2 (en) * 2009-04-13 2016-12-27 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
DE102009035639B4 (de) * 2009-07-31 2019-10-24 Osram Opto Semiconductors Gmbh Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
DE102009028909A1 (de) * 2009-08-26 2011-03-17 Nanoplus Gmbh Nanosystems And Technologies Halbleiterlaser mit auf einem Laserspiegel angebrachtem Absorber
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
WO2011045797A1 (en) * 2009-10-18 2011-04-21 Technion- Research And Development Foundation Ltd. A semiconductor two-photon device
US8368047B2 (en) * 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
DE102010015197A1 (de) * 2010-04-16 2012-01-19 Osram Opto Semiconductors Gmbh Laserlichtquelle
DE102010020625B4 (de) 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
US8451876B1 (en) * 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
DE102011123129B4 (de) * 2011-05-02 2025-04-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit Modenfilterstruktur
DE102011100175B4 (de) * 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
DE102011111604B4 (de) 2011-08-25 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
DE102011054954A1 (de) 2011-10-31 2013-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronischer Halbleiterlaser
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
DE102012103549B4 (de) * 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102012106943B4 (de) * 2012-07-30 2019-06-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiode
DE102012109175B4 (de) * 2012-09-27 2019-02-28 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP6142429B2 (ja) * 2013-02-28 2017-06-07 京セラ株式会社 エタロン及びエタロン装置
DE102013102328A1 (de) 2013-03-08 2014-09-11 Osram Opto Semiconductors Gmbh Halbleiterlaseranordnung
DE102013105798A1 (de) * 2013-06-05 2014-12-11 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
KR20150059835A (ko) * 2013-11-25 2015-06-03 에스케이하이닉스 주식회사 관통전극을 갖는 반도체 소자
US10191213B2 (en) * 2014-01-09 2019-01-29 Globalfoundries Inc. Shielding structures between optical waveguides
EP3116825B1 (en) 2014-04-09 2022-06-15 Huawei Technologies Co., Ltd. Edge coupling device fabrication
DE102015110496B4 (de) * 2015-06-30 2018-06-14 Infineon Technologies Dresden Gmbh Integriertes, lichtemittierendes bauelement,integriertes sensorbauelement undherstellungsverfahren
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10892327B2 (en) 2015-09-14 2021-01-12 University College Cork Semi-metal rectifying junction
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
US9837792B2 (en) * 2016-03-07 2017-12-05 Epistar Corporation Light-emitting device
DE102016106495A1 (de) 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102016111442A1 (de) * 2016-06-22 2017-12-28 Osram Opto Semiconductors Gmbh Halbleiterlichtquelle
DE102016113071A1 (de) 2016-07-15 2018-01-18 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
TWI609541B (zh) * 2016-12-12 2017-12-21 聯亞光電工業股份有限公司 半導體雷射裝置
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
US20180278011A1 (en) 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
DE102018125493A1 (de) * 2018-10-15 2020-04-16 Osram Opto Semiconductors Gmbh Kantenemittierender halbleiterlaser und verfahren zur herstellung eines kantenemittierenden halbleiterlasers
JP7154099B2 (ja) * 2018-10-19 2022-10-17 大阪瓦斯株式会社 熱輻射光源
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
DE102019115597A1 (de) * 2019-06-07 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung und optoelektronisches Strahlumlenkelement für eine Halbleiterlaservorrichtung
US11588290B2 (en) * 2019-12-30 2023-02-21 Raytheon Company Methods and apparatus for generating ghost light
EP3859308B1 (en) * 2020-01-28 2023-12-20 Infineon Technologies AG Radiation source and gas sensor using the radiation source
US20230115502A1 (en) * 2020-03-23 2023-04-13 Nippon Telegraph And Telephone Corporation Optical Device
US11245250B2 (en) 2020-04-20 2022-02-08 Cisco Technology, Inc. Quantum dot comb laser
CN111641102B (zh) * 2020-05-20 2022-01-11 深圳瑞波光电子有限公司 半导体激光器、巴条及制作方法
DE102020118824A1 (de) 2020-07-16 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement, verfahren zur herstellung des optoelektronischen halbleiterbauelements und lidar-system
US20220344905A1 (en) * 2021-04-21 2022-10-27 Osram Opto Semiconductors Gmbh Semiconductor laser device and projection device
DE102021121115A1 (de) * 2021-08-13 2023-02-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Spiegel für einen laser, laser und laserbauteil
KR102513576B1 (ko) * 2021-09-02 2023-03-29 주식회사 루트로닉 레이저 장치
DE102022104418A1 (de) 2022-02-24 2023-08-24 Ams-Osram International Gmbh Kantenemittierende halbleiterlaserdiode
CN116632648B (zh) * 2023-07-19 2023-12-19 苏州长光华芯光电技术股份有限公司 一种边发射半导体发光结构及其制备方法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721752A (en) 1995-12-15 1998-02-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US20020024981A1 (en) 2000-06-20 2002-02-28 Tsuyoshi Tojo Semiconductor laser
JP2002280663A (ja) 2001-03-15 2002-09-27 Sony Corp 半導体レーザ素子及び光集積デバイス
US20030165170A1 (en) 1999-12-28 2003-09-04 Genichi Hatakoshi Semiconductor laser device
US20030209722A1 (en) 1999-12-22 2003-11-13 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
US20040213315A1 (en) 1999-02-17 2004-10-28 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, optical disk apparatus and optical integrated unit
WO2006035388A2 (en) 2004-09-30 2006-04-06 Koninklijke Philips Electronics N.V. Phosphor-converted led with luminance enhancement through light recycling
US20060171440A1 (en) 2003-03-14 2006-08-03 Pbc Lasers Ltd. Apparatus for generating improved laser beam
US20060193353A1 (en) 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. High power single mode semiconductor laser device and fabrication method thereof
DE102005056949A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optisch gepumpter oberflächenemittierender Halbleiterlaser und optische Projektionsvorrichtung mit solch einem Halbleiterlaser
DE102005058237A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterlaser-Bauelement und optische Projektionsvorrichtung mit solch einem oberflächenemittierenden Halbleiterlaser-Bauelement
DE102006010728A1 (de) 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Laservorrichtung
US20070211772A1 (en) 2003-09-30 2007-09-13 Andrea Romano Phase-Control in an External-Cavity Tuneable Laser

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6019158B2 (ja) * 1978-09-22 1985-05-14 富士通株式会社 半導体発光装置
JPS57113643A (en) 1981-01-05 1982-07-15 Toshiba Corp Optical transmission system using semiconductor laser
JPH067625B2 (ja) 1985-01-28 1994-01-26 キヤノン株式会社 モニタ−用光検出器内蔵半導体レ−ザ素子
JP2659187B2 (ja) * 1987-04-14 1997-09-30 日本電気株式会社 光フィルタ素子
JPH07119905B2 (ja) * 1988-03-25 1995-12-20 日本電気株式会社 可変波長フィルタ
JPH08264890A (ja) * 1995-03-28 1996-10-11 Alps Electric Co Ltd 分布帰還型半導体レーザおよびその製造方法
US6044101A (en) 1995-08-29 2000-03-28 Siemens Aktiengesellschaft Semiconductor laser device
KR19990044214A (ko) 1995-08-29 1999-06-25 디어터 크리스트, 베르너 뵈켈 레이저 장치
US5923690A (en) 1996-01-25 1999-07-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device
JP2003142780A (ja) * 1996-01-25 2003-05-16 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法
CN1206746C (zh) * 1999-02-05 2005-06-15 株式会社日矿材料 光电变换功能元件及其制造方法
JP3456938B2 (ja) 1999-02-17 2003-10-14 松下電器産業株式会社 半導体レーザ装置、光ディスク装置及び光集積化装置
JP2001135885A (ja) 1999-11-04 2001-05-18 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその組立方法
JP2002006595A (ja) * 2000-06-21 2002-01-09 Hitachi Ltd 電子写真装置
US20020024828A1 (en) 2000-08-31 2002-02-28 Hidetake Hayashi Inverter suitable for use with portable AC power supply unit
ATE487255T1 (de) 2001-05-31 2010-11-15 Nichia Corp Halbleiterlaserelement
JP2003091875A (ja) 2001-07-09 2003-03-28 Ricoh Co Ltd 相変化型光情報記録媒体、光情報記録再生装置及び方法、並びに光学フィルター
US7042830B2 (en) 2001-07-09 2006-05-09 Ricoh Company, Ltd. Phase-change optical information recording medium, and optical information recording and reproducing apparatus and method for the same
US20030021327A1 (en) 2001-07-25 2003-01-30 Murry Stefan J. Semiconductor surface-emitting laser with integrated photodetector
JP3989244B2 (ja) * 2001-12-26 2007-10-10 シャープ株式会社 窒化物半導体レーザ素子および光記録再生装置
US20050040410A1 (en) 2002-02-12 2005-02-24 Nl-Nanosemiconductor Gmbh Tilted cavity semiconductor optoelectronic device and method of making same
JP2004083653A (ja) * 2002-08-23 2004-03-18 Sharp Corp 発光装置ならびに蛍光体およびその製造方法
EP1427077B1 (en) * 2002-12-02 2007-04-18 Newport Corporation External cavity laser having improved single mode operation
KR20050019485A (ko) * 2003-08-19 2005-03-03 삼성전자주식회사 광검출소자가 일체적으로 형성되는 수직 면발광 레이저
JP4830315B2 (ja) * 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子
JP2005260023A (ja) * 2004-03-12 2005-09-22 Fuji Photo Film Co Ltd 半導体レーザ素子
US7403553B2 (en) * 2004-06-25 2008-07-22 Finisar Corporation Absorbing layers for reduced spontaneous emission effects in an integrated photodiode
JP4425740B2 (ja) 2004-08-02 2010-03-03 富士通株式会社 光増幅器
JP2006100626A (ja) * 2004-09-30 2006-04-13 Fuji Photo Film Co Ltd 半導体発光装置
JP4451371B2 (ja) 2004-12-20 2010-04-14 シャープ株式会社 窒化物半導体レーザ素子
JP2006278458A (ja) * 2005-03-28 2006-10-12 Sharp Corp 発光素子とその製造方法および照明装置
US7399953B2 (en) 2005-05-06 2008-07-15 Avago Technologies Ecbu Ip Pte Ltd Light source control in optical pointing device
CN100477425C (zh) * 2005-05-19 2009-04-08 松下电器产业株式会社 氮化物半导体装置及其制造方法
CN101175835B (zh) * 2005-05-24 2012-10-10 三菱化学株式会社 荧光体及其应用
JP2007027207A (ja) * 2005-07-12 2007-02-01 Sumitomo Electric Ind Ltd 半導体発光素子
JP5135717B2 (ja) 2006-05-31 2013-02-06 ソニー株式会社 半導体発光装置
DE102008012859B4 (de) 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5721752A (en) 1995-12-15 1998-02-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
US20040213315A1 (en) 1999-02-17 2004-10-28 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device, optical disk apparatus and optical integrated unit
US20030209722A1 (en) 1999-12-22 2003-11-13 Kabushiki Kaisha Toshiba Light-emitting element and method of fabrication thereof
US20030165170A1 (en) 1999-12-28 2003-09-04 Genichi Hatakoshi Semiconductor laser device
US20020024981A1 (en) 2000-06-20 2002-02-28 Tsuyoshi Tojo Semiconductor laser
JP2002280663A (ja) 2001-03-15 2002-09-27 Sony Corp 半導体レーザ素子及び光集積デバイス
US20060171440A1 (en) 2003-03-14 2006-08-03 Pbc Lasers Ltd. Apparatus for generating improved laser beam
US20070211772A1 (en) 2003-09-30 2007-09-13 Andrea Romano Phase-Control in an External-Cavity Tuneable Laser
WO2006035388A2 (en) 2004-09-30 2006-04-06 Koninklijke Philips Electronics N.V. Phosphor-converted led with luminance enhancement through light recycling
US20060193353A1 (en) 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. High power single mode semiconductor laser device and fabrication method thereof
DE102005056949A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optisch gepumpter oberflächenemittierender Halbleiterlaser und optische Projektionsvorrichtung mit solch einem Halbleiterlaser
DE102005058237A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Oberflächenemittierendes Halbleiterlaser-Bauelement und optische Projektionsvorrichtung mit solch einem oberflächenemittierenden Halbleiterlaser-Bauelement
DE102006010728A1 (de) 2005-12-05 2007-06-06 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Laservorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Streifer, W. et al.; Reduction of GaAs diode laser spontaneous emission. In: Applied Physics Letters (1980), Vol. 37, S. 10-12

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