DE102007058720B4 - Reflexive Montagesubstrate für LEDs - Google Patents
Reflexive Montagesubstrate für LEDs Download PDFInfo
- Publication number
- DE102007058720B4 DE102007058720B4 DE102007058720.3A DE102007058720A DE102007058720B4 DE 102007058720 B4 DE102007058720 B4 DE 102007058720B4 DE 102007058720 A DE102007058720 A DE 102007058720A DE 102007058720 B4 DE102007058720 B4 DE 102007058720B4
- Authority
- DE
- Germany
- Prior art keywords
- light
- active structure
- led
- substrate
- mounting substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/611,600 US9178121B2 (en) | 2006-12-15 | 2006-12-15 | Reflective mounting substrates for light emitting diodes |
| US11/611,600 | 2006-12-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102007058720A1 DE102007058720A1 (de) | 2008-06-26 |
| DE102007058720B4 true DE102007058720B4 (de) | 2017-09-14 |
Family
ID=39432037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007058720.3A Active DE102007058720B4 (de) | 2006-12-15 | 2007-12-06 | Reflexive Montagesubstrate für LEDs |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US9178121B2 (enExample) |
| JP (4) | JP2008153669A (enExample) |
| DE (1) | DE102007058720B4 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4190448A3 (en) | 2006-05-11 | 2023-09-20 | Bio-Rad Laboratories, Inc. | Microfluidic devices |
| JP4837045B2 (ja) * | 2006-10-12 | 2011-12-14 | パナソニック株式会社 | 発光装置及びその製造方法 |
| US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
| TWI440210B (zh) | 2007-01-22 | 2014-06-01 | 克里公司 | 使用發光裝置外部互連陣列之照明裝置及其製造方法 |
| KR100901618B1 (ko) | 2007-04-19 | 2009-06-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 제조방법 |
| US9634191B2 (en) | 2007-11-14 | 2017-04-25 | Cree, Inc. | Wire bond free wafer level LED |
| US10147843B2 (en) | 2008-07-24 | 2018-12-04 | Lumileds Llc | Semiconductor light emitting device including a window layer and a light-directing structure |
| US8699141B2 (en) * | 2009-03-13 | 2014-04-15 | Knowles Electronics, Llc | Lens assembly apparatus and method |
| US8659835B2 (en) | 2009-03-13 | 2014-02-25 | Optotune Ag | Lens systems and method |
| EP3415235B1 (en) | 2009-03-23 | 2025-11-12 | Bio-Rad Laboratories, Inc. | Manipulation of microfluidic droplets |
| US8292468B2 (en) | 2009-06-10 | 2012-10-23 | Rensselaer Polytechnic Institute | Solid state light source light bulb |
| US8207547B2 (en) | 2009-06-10 | 2012-06-26 | Brudgelux, Inc. | Thin-film LED with P and N contacts electrically isolated from the substrate |
| KR100999784B1 (ko) * | 2010-02-23 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
| US8846421B2 (en) * | 2011-03-10 | 2014-09-30 | Mds Co. Ltd. | Method of manufacturing lead frame for light-emitting device package and light-emitting device package |
| KR20130049568A (ko) * | 2011-11-04 | 2013-05-14 | 삼성전자주식회사 | 반도체 발광소자 및 그 제조방법 |
| US11160148B2 (en) | 2017-06-13 | 2021-10-26 | Ideal Industries Lighting Llc | Adaptive area lamp |
| US11792898B2 (en) | 2012-07-01 | 2023-10-17 | Ideal Industries Lighting Llc | Enhanced fixtures for area lighting |
| JP6179857B2 (ja) * | 2013-09-24 | 2017-08-16 | パナソニックIpマネジメント株式会社 | 発光装置 |
| US9236265B2 (en) | 2013-11-04 | 2016-01-12 | Applied Materials, Inc. | Silicon germanium processing |
| KR101501020B1 (ko) * | 2014-02-17 | 2015-03-13 | 주식회사 루멘스 | 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제조 방법 |
| US10529696B2 (en) | 2016-04-12 | 2020-01-07 | Cree, Inc. | High density pixelated LED and devices and methods thereof |
| US20170371087A1 (en) * | 2016-06-22 | 2017-12-28 | Apple Inc. | Displays with Ramped Light Guide Layers and Multidirectional Light-Emitting Diodes |
| JP6852408B2 (ja) * | 2017-01-18 | 2021-03-31 | 住友ゴム工業株式会社 | タイヤ |
| US10651357B2 (en) | 2017-08-03 | 2020-05-12 | Cree, Inc. | High density pixelated-led chips and chip array devices |
| US10734363B2 (en) | 2017-08-03 | 2020-08-04 | Cree, Inc. | High density pixelated-LED chips and chip array devices |
| US10529773B2 (en) | 2018-02-14 | 2020-01-07 | Cree, Inc. | Solid state lighting devices with opposing emission directions |
| US10903265B2 (en) | 2018-12-21 | 2021-01-26 | Cree, Inc. | Pixelated-LED chips and chip array devices, and fabrication methods |
| EP4052296A1 (en) | 2019-10-29 | 2022-09-07 | Creeled, Inc. | Texturing for high density pixelated-led chips |
| US11437548B2 (en) | 2020-10-23 | 2022-09-06 | Creeled, Inc. | Pixelated-LED chips with inter-pixel underfill materials, and fabrication methods |
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| WO1998012757A1 (de) * | 1996-09-20 | 1998-03-26 | Siemens Aktiengesellschaft | Wellenlängenkonvertierende vergussmasse, deren verwendung und verfahren zu deren herstellung |
| US20040214412A1 (en) * | 2001-06-13 | 2004-10-28 | Barnes Jennifer Mary | Method of growing a semiconductor layer |
| US20060060877A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride-silicon carbide light emitting diode |
| US20060060879A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High ouput small area group III nitride leds |
| US20060060874A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride LED with lenticular surface |
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-
2006
- 2006-12-15 US US11/611,600 patent/US9178121B2/en active Active
-
2007
- 2007-12-06 DE DE102007058720.3A patent/DE102007058720B4/de active Active
- 2007-12-13 JP JP2007322509A patent/JP2008153669A/ja active Pending
-
2010
- 2010-12-15 JP JP2010279745A patent/JP5763913B2/ja active Active
-
2011
- 2011-07-13 JP JP2011154394A patent/JP2011249822A/ja active Pending
- 2011-11-28 JP JP2011259427A patent/JP5620359B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998012757A1 (de) * | 1996-09-20 | 1998-03-26 | Siemens Aktiengesellschaft | Wellenlängenkonvertierende vergussmasse, deren verwendung und verfahren zu deren herstellung |
| US20040214412A1 (en) * | 2001-06-13 | 2004-10-28 | Barnes Jennifer Mary | Method of growing a semiconductor layer |
| US20060060877A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride-silicon carbide light emitting diode |
| US20060060879A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High ouput small area group III nitride leds |
| US20060060874A1 (en) * | 2004-09-22 | 2006-03-23 | Edmond John A | High efficiency group III nitride LED with lenticular surface |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011249822A (ja) | 2011-12-08 |
| US9178121B2 (en) | 2015-11-03 |
| JP2012054606A (ja) | 2012-03-15 |
| US20080142820A1 (en) | 2008-06-19 |
| DE102007058720A1 (de) | 2008-06-26 |
| JP2008153669A (ja) | 2008-07-03 |
| JP2011055013A (ja) | 2011-03-17 |
| JP5620359B2 (ja) | 2014-11-05 |
| JP5763913B2 (ja) | 2015-08-12 |
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