DE102007032555A1 - Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips - Google Patents

Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips Download PDF

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Publication number
DE102007032555A1
DE102007032555A1 DE102007032555A DE102007032555A DE102007032555A1 DE 102007032555 A1 DE102007032555 A1 DE 102007032555A1 DE 102007032555 A DE102007032555 A DE 102007032555A DE 102007032555 A DE102007032555 A DE 102007032555A DE 102007032555 A1 DE102007032555 A1 DE 102007032555A1
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DE
Germany
Prior art keywords
layer
contact
semiconductor chip
semiconductor
chip according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102007032555A
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German (de)
English (en)
Inventor
Michael Dr. Fehrer
Uwe Dr. Strauss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39720739&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE102007032555(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102007032555A priority Critical patent/DE102007032555A1/de
Priority to EP08159845.0A priority patent/EP2015372B1/de
Priority to EP16187689.1A priority patent/EP3121858A1/de
Priority to JP2008180584A priority patent/JP5079611B2/ja
Priority to US12/218,492 priority patent/US7994519B2/en
Publication of DE102007032555A1 publication Critical patent/DE102007032555A1/de
Priority to JP2012188817A priority patent/JP5876792B2/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials

Landscapes

  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102007032555A 2007-07-12 2007-07-12 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips Withdrawn DE102007032555A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102007032555A DE102007032555A1 (de) 2007-07-12 2007-07-12 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
EP08159845.0A EP2015372B1 (de) 2007-07-12 2008-07-07 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
EP16187689.1A EP3121858A1 (de) 2007-07-12 2008-07-07 Halbleiterchip und verfahren zur herstellung eines halbleiterchips
JP2008180584A JP5079611B2 (ja) 2007-07-12 2008-07-10 半導体チップ及び半導体チップ製造方法
US12/218,492 US7994519B2 (en) 2007-07-12 2008-07-14 Semiconductor chip and method for producing a semiconductor chip
JP2012188817A JP5876792B2 (ja) 2007-07-12 2012-08-29 半導体チップ及び半導体チップ製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007032555A DE102007032555A1 (de) 2007-07-12 2007-07-12 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Publications (1)

Publication Number Publication Date
DE102007032555A1 true DE102007032555A1 (de) 2009-01-15

Family

ID=39720739

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007032555A Withdrawn DE102007032555A1 (de) 2007-07-12 2007-07-12 Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips

Country Status (4)

Country Link
US (1) US7994519B2 (https=)
EP (2) EP2015372B1 (https=)
JP (2) JP5079611B2 (https=)
DE (1) DE102007032555A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015102857A1 (de) * 2015-02-27 2016-09-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines elektrischen Kontakts und Verfahren zur Herstellung eines Halbleiterbauelements
EP3121858A1 (de) 2007-07-12 2017-01-25 Osram Opto Semiconductors Gmbh Halbleiterchip und verfahren zur herstellung eines halbleiterchips
DE102015011635A1 (de) * 2015-09-11 2017-03-16 Azur Space Solar Power Gmbh lnfrarot-LED
DE102016006295A1 (de) * 2016-05-27 2017-11-30 Azur Space Solar Power Gmbh Leuchtdiode
DE102017002333A1 (de) 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode
DE102017002332A1 (de) 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode

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TWI404189B (zh) * 2009-02-06 2013-08-01 億光電子工業股份有限公司 複晶式發光二極體元件及其製造方法
JP2010251686A (ja) * 2009-03-26 2010-11-04 Harison Toshiba Lighting Corp 発光装置及びその製造方法
CN103222074B (zh) 2010-11-18 2016-06-01 首尔伟傲世有限公司 具有电极焊盘的发光二极管芯片
US9520536B2 (en) 2010-11-18 2016-12-13 Seoul Viosys Co., Ltd. Light emitting diode chip having electrode pad
KR101769075B1 (ko) * 2010-12-24 2017-08-18 서울바이오시스 주식회사 발광 다이오드 칩 및 그것을 제조하는 방법
US9312437B2 (en) * 2011-11-07 2016-04-12 Koninklijke Philips N.V. P-contact with more uniform injection and lower optical loss
DE102012108883A1 (de) * 2012-09-20 2014-03-20 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung von optoelektronischen Halbleiterchips
DE102013007981A1 (de) 2013-05-10 2014-11-13 Audi Ag Vorrichtung zum Erzeugen eines Impulses auf ein Fahrzeug in einer Fahrzeugquerrichtung
FR3008547B1 (fr) * 2013-07-15 2016-12-09 Commissariat Energie Atomique Structure emissive a injection laterale de porteurs
CN103594593B (zh) * 2013-11-08 2016-04-06 溧阳市江大技术转移中心有限公司 具有粗化透明电极的倒装发光二极管的制造方法
KR102131345B1 (ko) * 2014-02-07 2020-07-07 엘지이노텍 주식회사 발광소자
JP6149878B2 (ja) 2015-02-13 2017-06-21 日亜化学工業株式会社 発光素子
DE102017104735B4 (de) 2017-03-07 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip
WO2022094801A1 (zh) * 2020-11-04 2022-05-12 苏州晶湛半导体有限公司 谐振腔发光二极管及其制备方法
CN115483323A (zh) * 2021-05-31 2022-12-16 京东方科技集团股份有限公司 发光器件、发光基板和发光器件的制作方法

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US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
DE10346605A1 (de) * 2003-08-29 2005-03-31 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
US20050087753A1 (en) * 2003-10-24 2005-04-28 D'evelyn Mark P. Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
EP1577959A2 (en) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Semiconductor light emitting devices including in-plane light emitting layers
DE102005008056A1 (de) * 2004-12-30 2006-07-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
DE102005061797A1 (de) * 2005-12-23 2007-07-05 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit Stromaufweitungsschicht und Verfahren zu dessen Herstellung

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US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
DE10346605A1 (de) * 2003-08-29 2005-03-31 Osram Opto Semiconductors Gmbh Strahlungemittierendes Halbleiterbauelement
US20050087753A1 (en) * 2003-10-24 2005-04-28 D'evelyn Mark P. Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates
EP1577959A2 (en) * 2004-03-19 2005-09-21 LumiLeds Lighting U.S., LLC Semiconductor light emitting devices including in-plane light emitting layers
DE102005008056A1 (de) * 2004-12-30 2006-07-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips
DE102005061797A1 (de) * 2005-12-23 2007-07-05 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit Stromaufweitungsschicht und Verfahren zu dessen Herstellung

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3121858A1 (de) 2007-07-12 2017-01-25 Osram Opto Semiconductors Gmbh Halbleiterchip und verfahren zur herstellung eines halbleiterchips
DE102015102857A1 (de) * 2015-02-27 2016-09-01 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement, Verfahren zur Herstellung eines elektrischen Kontakts und Verfahren zur Herstellung eines Halbleiterbauelements
US10153400B2 (en) 2015-02-27 2018-12-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device, method of producing an electrical contact and method of producing a semiconductor device
DE102015011635A1 (de) * 2015-09-11 2017-03-16 Azur Space Solar Power Gmbh lnfrarot-LED
DE102015011635B4 (de) * 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
US10211370B2 (en) 2015-09-11 2019-02-19 Azur Space Solar Power Gmbh Infrared LED
US10103289B2 (en) 2016-05-27 2018-10-16 Azur Space Solar Power Gmbh Light-emitting diode
DE102016006295A1 (de) * 2016-05-27 2017-11-30 Azur Space Solar Power Gmbh Leuchtdiode
DE102017002333A1 (de) 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode
US10128413B2 (en) 2017-03-13 2018-11-13 Azur Space Solar Power Gmbh Light emitting diode
CN108574028A (zh) * 2017-03-13 2018-09-25 阿聚尔斯佩西太阳能有限责任公司 发光二极管
EP3376547A1 (de) * 2017-03-13 2018-09-19 AZUR SPACE Solar Power GmbH Leuchtdiode
TWI661577B (zh) * 2017-03-13 2019-06-01 德商艾澤太空太陽能公司 發光二極體
DE102017002332B4 (de) * 2017-03-13 2019-11-07 Azur Space Solar Power Gmbh Leuchtdiode
US10475963B2 (en) 2017-03-13 2019-11-12 Azur Space Solar Power Gmbh Light emitting diode
US10615309B2 (en) 2017-03-13 2020-04-07 Azur Space Solar Power Gmbh Light emitting diode
CN108574028B (zh) * 2017-03-13 2020-09-01 阿聚尔斯佩西太阳能有限责任公司 发光二极管
DE102017002332A1 (de) 2017-03-13 2018-09-13 Azur Space Solar Power Gmbh Leuchtdiode

Also Published As

Publication number Publication date
JP2012256933A (ja) 2012-12-27
JP2009033157A (ja) 2009-02-12
EP3121858A1 (de) 2017-01-25
US20090045426A1 (en) 2009-02-19
EP2015372A2 (de) 2009-01-14
EP2015372A3 (de) 2013-02-06
JP5876792B2 (ja) 2016-03-02
US7994519B2 (en) 2011-08-09
EP2015372B1 (de) 2016-10-19
JP5079611B2 (ja) 2012-11-21

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Effective date: 20140715