DE102007015232A1 - Ladungspartikelstrahlenvorrichtung, Anomalieerfassungsverfahren für eine DA-Wandlereinheit, Ladungspartikelstrahlenschreibverfahren und Maske - Google Patents
Ladungspartikelstrahlenvorrichtung, Anomalieerfassungsverfahren für eine DA-Wandlereinheit, Ladungspartikelstrahlenschreibverfahren und Maske Download PDFInfo
- Publication number
- DE102007015232A1 DE102007015232A1 DE102007015232A DE102007015232A DE102007015232A1 DE 102007015232 A1 DE102007015232 A1 DE 102007015232A1 DE 102007015232 A DE102007015232 A DE 102007015232A DE 102007015232 A DE102007015232 A DE 102007015232A DE 102007015232 A1 DE102007015232 A1 DE 102007015232A1
- Authority
- DE
- Germany
- Prior art keywords
- daw
- output
- value
- analog
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000002245 particle Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 56
- 238000001514 detection method Methods 0.000 title claims description 51
- 230000005856 abnormality Effects 0.000 title claims description 25
- 230000002159 abnormal effect Effects 0.000 claims abstract description 90
- 238000012937 correction Methods 0.000 claims description 18
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 230000002547 anomalous effect Effects 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 description 62
- 239000003990 capacitor Substances 0.000 description 51
- 238000007493 shaping process Methods 0.000 description 39
- 238000009826 distribution Methods 0.000 description 34
- 230000007246 mechanism Effects 0.000 description 33
- 230000008569 process Effects 0.000 description 28
- 238000011156 evaluation Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 23
- 238000013461 design Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000001629 suppression Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 241000922351 Anoma Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000013102 re-test Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/10—Calibration or testing
- H03M1/1071—Measuring or testing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/09—Electric systems for directing or deflecting the discharge along a desired path, e.g. E-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006-097370 | 2006-03-31 | ||
| JP2006097370A JP5007063B2 (ja) | 2006-03-31 | 2006-03-31 | 荷電粒子ビーム装置、ｄａ変換装置の異常検出方法、荷電粒子ビーム描画方法及びマスク |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102007015232A1 true DE102007015232A1 (de) | 2007-10-18 |
Family
ID=38514835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102007015232A Ceased DE102007015232A1 (de) | 2006-03-31 | 2007-03-29 | Ladungspartikelstrahlenvorrichtung, Anomalieerfassungsverfahren für eine DA-Wandlereinheit, Ladungspartikelstrahlenschreibverfahren und Maske |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7463173B2 (enExample) |
| JP (1) | JP5007063B2 (enExample) |
| KR (1) | KR100866203B1 (enExample) |
| DE (1) | DE102007015232A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7508331B2 (en) * | 2007-01-31 | 2009-03-24 | Wolfson Microelectronics Plc | Digital-to-analog converter with dynamic element matching to minimize mismatch error |
| JP5123730B2 (ja) * | 2008-05-01 | 2013-01-23 | 株式会社ニューフレアテクノロジー | 偏向アンプのセトリング時間検査方法及び偏向アンプの故障判定方法 |
| JP5174531B2 (ja) * | 2008-05-16 | 2013-04-03 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画装置における描画方法 |
| JP5107812B2 (ja) * | 2008-07-08 | 2012-12-26 | 株式会社日立ハイテクノロジーズ | 検査装置 |
| JP5461799B2 (ja) * | 2008-07-30 | 2014-04-02 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画装置におけるｄａｃアンプユニットの診断方法 |
| US7898447B2 (en) * | 2009-07-16 | 2011-03-01 | Nuflare Technology, Inc. | Methods and systems for testing digital-to-analog converter/amplifier circuits |
| JP5881972B2 (ja) * | 2011-05-12 | 2016-03-09 | 株式会社ニューフレアテクノロジー | Ｄａｃアンプの評価方法及び荷電粒子ビーム描画装置 |
| JP5855390B2 (ja) * | 2011-08-30 | 2016-02-09 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及びブランキングタイミングの調整方法 |
| JP5819140B2 (ja) * | 2011-08-30 | 2015-11-18 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及びｄａｃアンプの評価方法 |
| EP2575159B1 (en) * | 2011-09-30 | 2016-04-20 | Carl Zeiss Microscopy GmbH | Particle beam system and method for operating the same |
| JP6087154B2 (ja) * | 2013-01-18 | 2017-03-01 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、試料面へのビーム入射角調整方法、および荷電粒子ビーム描画方法 |
| JP5970394B2 (ja) * | 2013-02-27 | 2016-08-17 | 株式会社日立ハイテクノロジーズ | 検査装置 |
| JP6057797B2 (ja) | 2013-03-21 | 2017-01-11 | 株式会社ニューフレアテクノロジー | セトリング時間の取得方法 |
| JP6349944B2 (ja) * | 2014-05-13 | 2018-07-04 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
| KR102247563B1 (ko) | 2014-06-12 | 2021-05-03 | 삼성전자 주식회사 | 전자빔을 이용한 노광 방법과 그 노광 방법을 이용한 마스크 및 반도체 소자 제조방법 |
| JP6240045B2 (ja) * | 2014-08-25 | 2017-11-29 | 株式会社ニューフレアテクノロジー | 異常検出方法及び電子線描画装置 |
| JP2016096204A (ja) * | 2014-11-13 | 2016-05-26 | 株式会社ニューフレアテクノロジー | 出力調整方法及び電子線描画装置 |
| KR102404639B1 (ko) | 2015-02-02 | 2022-06-03 | 삼성전자주식회사 | 전자 빔 노광 방법 및 그를 포함하는 기판 제조 방법 |
| JP7356605B2 (ja) * | 2020-12-30 | 2023-10-04 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| US11810749B2 (en) * | 2021-12-06 | 2023-11-07 | Carl Zeiss Smt Gmbh | Charged particle beam system, method of operating a charged particle beam system, method of recording a plurality of images and computer programs for executing the methods |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6424351A (en) * | 1987-07-20 | 1989-01-26 | Fujitsu Ltd | Self-diagonosis device of da converting output unit for electron beam device |
| DE68920281T2 (de) * | 1988-10-31 | 1995-05-11 | Fujitsu Ltd | Vorrichtung und Verfahren zur Lithographie mittels eines Strahls geladener Teilchen. |
| EP0433993B1 (en) * | 1989-12-21 | 1997-03-19 | Fujitsu Limited | Method and apparatus for controlling charged particle beams in charged particle beam exposure system |
| JPH05190432A (ja) * | 1992-01-17 | 1993-07-30 | Fujitsu Ltd | 荷電粒子線露光装置 |
| US5528048A (en) * | 1994-03-15 | 1996-06-18 | Fujitsu Limited | Charged particle beam exposure system and method |
| JP3453004B2 (ja) * | 1995-06-08 | 2003-10-06 | 富士通株式会社 | 荷電粒子ビーム露光方法及び装置 |
| JP3584962B2 (ja) | 1999-02-03 | 2004-11-04 | 東芝機械株式会社 | 荷電ビーム描画方法及びその装置 |
| JP2002094380A (ja) * | 2000-09-20 | 2002-03-29 | Matsushita Electric Ind Co Ltd | Ｄａ変換装置 |
| JP2004259812A (ja) | 2003-02-25 | 2004-09-16 | Hitachi High-Technologies Corp | 電子線描画装置および電子線描画装置のセトリングタイム測定方法 |
| JP2005129614A (ja) * | 2003-10-22 | 2005-05-19 | Jeol Ltd | 荷電粒子ビーム装置。 |
| US7209055B1 (en) * | 2005-10-03 | 2007-04-24 | Applied Materials, Inc. | Electrostatic particle beam deflector |
-
2006
- 2006-03-31 JP JP2006097370A patent/JP5007063B2/ja active Active
-
2007
- 2007-03-28 US US11/692,409 patent/US7463173B2/en active Active
- 2007-03-29 DE DE102007015232A patent/DE102007015232A1/de not_active Ceased
- 2007-03-30 KR KR1020070031394A patent/KR100866203B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7463173B2 (en) | 2008-12-09 |
| US20070229337A1 (en) | 2007-10-04 |
| JP5007063B2 (ja) | 2012-08-22 |
| KR100866203B1 (ko) | 2008-10-30 |
| KR20070098709A (ko) | 2007-10-05 |
| JP2007271919A (ja) | 2007-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |