DE102006000477A1 - Feldeffekttransistor - Google Patents

Feldeffekttransistor Download PDF

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Publication number
DE102006000477A1
DE102006000477A1 DE102006000477A DE102006000477A DE102006000477A1 DE 102006000477 A1 DE102006000477 A1 DE 102006000477A1 DE 102006000477 A DE102006000477 A DE 102006000477A DE 102006000477 A DE102006000477 A DE 102006000477A DE 102006000477 A1 DE102006000477 A1 DE 102006000477A1
Authority
DE
Germany
Prior art keywords
interface
field effect
layer
effect transistor
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006000477A
Other languages
German (de)
English (en)
Inventor
Masayoshi Kosaki
Koji Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of DE102006000477A1 publication Critical patent/DE102006000477A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
DE102006000477A 2005-09-22 2006-09-21 Feldeffekttransistor Withdrawn DE102006000477A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005-275897 2005-09-22
JP2005275897A JP2007088252A (ja) 2005-09-22 2005-09-22 電界効果トランジスタ

Publications (1)

Publication Number Publication Date
DE102006000477A1 true DE102006000477A1 (de) 2007-04-05

Family

ID=37852846

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006000477A Withdrawn DE102006000477A1 (de) 2005-09-22 2006-09-21 Feldeffekttransistor

Country Status (4)

Country Link
US (1) US7432538B2 (https=)
JP (1) JP2007088252A (https=)
CN (1) CN100499162C (https=)
DE (1) DE102006000477A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090008678A1 (en) * 2006-02-10 2009-01-08 Nec Corporation Semiconductor device
JP5566670B2 (ja) * 2008-12-16 2014-08-06 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP5580009B2 (ja) * 2009-08-28 2014-08-27 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法
JP5702058B2 (ja) * 2009-08-28 2015-04-15 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法
CN107039482B (zh) * 2012-02-21 2020-03-31 晶元光电股份有限公司 一种半导体组件及具有该半导体组件的发光装置
TWI484626B (zh) * 2012-02-21 2015-05-11 璨圓光電股份有限公司 半導體發光元件及具有此半導體發光元件的發光裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP2000277536A (ja) 1999-03-29 2000-10-06 Nec Corp 電界効果トランジスタ
JP2003151996A (ja) * 2001-09-03 2003-05-23 Nichia Chem Ind Ltd ２次元電子ガスを用いた電子デバイス
JP4117535B2 (ja) * 2001-11-30 2008-07-16 信越半導体株式会社 化合物半導体素子
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP3733420B2 (ja) * 2002-03-01 2006-01-11 独立行政法人産業技術総合研究所 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
US7700973B2 (en) * 2003-10-10 2010-04-20 The Regents Of The University Of California GaN/AlGaN/GaN dispersion-free high electron mobility transistors
JP2005183551A (ja) 2003-12-17 2005-07-07 Nec Corp 半導体装置、電界効果トランジスタおよび電界効果トランジスタの製造方法
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7981744B2 (en) * 2004-06-10 2011-07-19 Toyoda Gosei Co., Ltd. Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Also Published As

Publication number Publication date
CN1937247A (zh) 2007-03-28
JP2007088252A (ja) 2007-04-05
US20070063220A1 (en) 2007-03-22
CN100499162C (zh) 2009-06-10
US7432538B2 (en) 2008-10-07

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OP8 Request for examination as to paragraph 44 patent law
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130403