CN100499162C - 场效应晶体管 - Google Patents

场效应晶体管 Download PDF

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Publication number
CN100499162C
CN100499162C CNB2006101278147A CN200610127814A CN100499162C CN 100499162 C CN100499162 C CN 100499162C CN B2006101278147 A CNB2006101278147 A CN B2006101278147A CN 200610127814 A CN200610127814 A CN 200610127814A CN 100499162 C CN100499162 C CN 100499162C
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CN
China
Prior art keywords
layer
field effect
effect transistor
interface
carrier supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006101278147A
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English (en)
Chinese (zh)
Other versions
CN1937247A (zh
Inventor
小嵜正芳
平田宏治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of CN1937247A publication Critical patent/CN1937247A/zh
Application granted granted Critical
Publication of CN100499162C publication Critical patent/CN100499162C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
CNB2006101278147A 2005-09-22 2006-09-20 场效应晶体管 Expired - Fee Related CN100499162C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005275897 2005-09-22
JP2005275897A JP2007088252A (ja) 2005-09-22 2005-09-22 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
CN1937247A CN1937247A (zh) 2007-03-28
CN100499162C true CN100499162C (zh) 2009-06-10

Family

ID=37852846

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006101278147A Expired - Fee Related CN100499162C (zh) 2005-09-22 2006-09-20 场效应晶体管

Country Status (4)

Country Link
US (1) US7432538B2 (https=)
JP (1) JP2007088252A (https=)
CN (1) CN100499162C (https=)
DE (1) DE102006000477A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090008678A1 (en) * 2006-02-10 2009-01-08 Nec Corporation Semiconductor device
JP5566670B2 (ja) * 2008-12-16 2014-08-06 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP5580009B2 (ja) * 2009-08-28 2014-08-27 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法
JP5702058B2 (ja) * 2009-08-28 2015-04-15 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法
CN107039482B (zh) * 2012-02-21 2020-03-31 晶元光电股份有限公司 一种半导体组件及具有该半导体组件的发光装置
TWI484626B (zh) * 2012-02-21 2015-05-11 璨圓光電股份有限公司 半導體發光元件及具有此半導體發光元件的發光裝置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP2000277536A (ja) 1999-03-29 2000-10-06 Nec Corp 電界効果トランジスタ
JP2003151996A (ja) * 2001-09-03 2003-05-23 Nichia Chem Ind Ltd ２次元電子ガスを用いた電子デバイス
JP4117535B2 (ja) * 2001-11-30 2008-07-16 信越半導体株式会社 化合物半導体素子
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP3733420B2 (ja) * 2002-03-01 2006-01-11 独立行政法人産業技術総合研究所 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
JP4385206B2 (ja) * 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
US7700973B2 (en) * 2003-10-10 2010-04-20 The Regents Of The University Of California GaN/AlGaN/GaN dispersion-free high electron mobility transistors
JP2005183551A (ja) 2003-12-17 2005-07-07 Nec Corp 半導体装置、電界効果トランジスタおよび電界効果トランジスタの製造方法
US7612390B2 (en) * 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7981744B2 (en) * 2004-06-10 2011-07-19 Toyoda Gosei Co., Ltd. Field-effect transistor, semiconductor device, a method for manufacturing them, and a method of semiconductor crystal growth

Also Published As

Publication number Publication date
CN1937247A (zh) 2007-03-28
JP2007088252A (ja) 2007-04-05
US20070063220A1 (en) 2007-03-22
DE102006000477A1 (de) 2007-04-05
US7432538B2 (en) 2008-10-07

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SE01 Entry into force of request for substantive examination
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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090610

Termination date: 20120920