DE102005060518B4 - Bilderfassungsbauelement und Herstellungsverfahren - Google Patents

Bilderfassungsbauelement und Herstellungsverfahren Download PDF

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Publication number
DE102005060518B4
DE102005060518B4 DE102005060518.4A DE102005060518A DE102005060518B4 DE 102005060518 B4 DE102005060518 B4 DE 102005060518B4 DE 102005060518 A DE102005060518 A DE 102005060518A DE 102005060518 B4 DE102005060518 B4 DE 102005060518B4
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DE
Germany
Prior art keywords
pixel
unit
light
dummy
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE102005060518.4A
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German (de)
English (en)
Other versions
DE102005060518A1 (de
Inventor
Jung-Hyun Nam
Yun-Hee Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040107181A external-priority patent/KR100690880B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE102005060518A1 publication Critical patent/DE102005060518A1/de
Application granted granted Critical
Publication of DE102005060518B4 publication Critical patent/DE102005060518B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
DE102005060518.4A 2004-12-16 2005-12-12 Bilderfassungsbauelement und Herstellungsverfahren Expired - Lifetime DE102005060518B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2004-0107181 2004-12-16
KR1020040107181A KR100690880B1 (ko) 2004-12-16 2004-12-16 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
US11/264,437 US7710477B2 (en) 2004-12-16 2005-11-01 CMOS image sensors having pixel arrays with uniform light sensitivity
US11/264,437 2005-11-01

Publications (2)

Publication Number Publication Date
DE102005060518A1 DE102005060518A1 (de) 2006-08-03
DE102005060518B4 true DE102005060518B4 (de) 2015-02-19

Family

ID=36673962

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005060518.4A Expired - Lifetime DE102005060518B4 (de) 2004-12-16 2005-12-12 Bilderfassungsbauelement und Herstellungsverfahren

Country Status (3)

Country Link
JP (1) JP2006173634A (https=)
DE (1) DE102005060518B4 (https=)
TW (1) TWI282621B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598581B2 (en) 2005-09-12 2009-10-06 Crosstek Capital, LLC Image sensor with decreased optical interference between adjacent pixels
JP5245267B2 (ja) * 2007-03-23 2013-07-24 セイコーエプソン株式会社 固体撮像装置
JP5274166B2 (ja) * 2008-09-10 2013-08-28 キヤノン株式会社 光電変換装置及び撮像システム
JP4978614B2 (ja) 2008-11-25 2012-07-18 ソニー株式会社 固体撮像装置
JP5109962B2 (ja) 2008-12-22 2012-12-26 ソニー株式会社 固体撮像装置および電子機器
JP5763474B2 (ja) * 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
JP6071183B2 (ja) * 2011-10-20 2017-02-01 キヤノン株式会社 固体撮像装置およびカメラ
CN104412129B (zh) * 2012-06-20 2018-05-25 皇家飞利浦有限公司 X射线探测器像素布局
JP5539458B2 (ja) * 2012-07-26 2014-07-02 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
US9235285B2 (en) 2013-05-13 2016-01-12 Himax Technologies Limited Pixel matrix, touch display device and drving method thereof
JP2016115815A (ja) 2014-12-15 2016-06-23 キヤノン株式会社 撮像装置および撮像システム
CN109920808B (zh) * 2017-12-13 2024-05-14 松下知识产权经营株式会社 摄像装置
US10852182B2 (en) * 2018-06-29 2020-12-01 Osram Opto Semiconductors Gmbh Ambient light detector, detector array and method
KR102609559B1 (ko) * 2019-04-10 2023-12-04 삼성전자주식회사 공유 픽셀들을 포함하는 이미지 센서
US11086452B2 (en) * 2019-11-27 2021-08-10 Au Optronics Corporation Pixel array substrate
CN113410176B (zh) * 2020-03-16 2023-10-27 合肥晶合集成电路股份有限公司 Oled器件及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124438A (ja) * 1998-10-19 2000-04-28 Toshiba Corp 固体撮像装置
KR20040022169A (ko) * 2002-09-05 2004-03-11 가부시끼가이샤 도시바 고체 촬상 장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140539A (ja) * 1997-07-18 1999-02-12 Mitsuteru Kimura フローティング部を有する半導体装置及びフローティング単結晶薄膜の形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000124438A (ja) * 1998-10-19 2000-04-28 Toshiba Corp 固体撮像装置
KR20040022169A (ko) * 2002-09-05 2004-03-11 가부시끼가이샤 도시바 고체 촬상 장치

Also Published As

Publication number Publication date
TW200627637A (en) 2006-08-01
DE102005060518A1 (de) 2006-08-03
TWI282621B (en) 2007-06-11
JP2006173634A (ja) 2006-06-29

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Ipc: H10F0039180000

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