TWI282621B - CMOS image sensors having pixel arrays with uniform light sensitivity - Google Patents

CMOS image sensors having pixel arrays with uniform light sensitivity Download PDF

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Publication number
TWI282621B
TWI282621B TW094144658A TW94144658A TWI282621B TW I282621 B TWI282621 B TW I282621B TW 094144658 A TW094144658 A TW 094144658A TW 94144658 A TW94144658 A TW 94144658A TW I282621 B TWI282621 B TW I282621B
Authority
TW
Taiwan
Prior art keywords
unit
aforementioned
pattern
image sensing
pixel
Prior art date
Application number
TW094144658A
Other languages
English (en)
Chinese (zh)
Other versions
TW200627637A (en
Inventor
Jung-Hyun Nam
Yun-Hee Lee
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040107181A external-priority patent/KR100690880B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200627637A publication Critical patent/TW200627637A/zh
Application granted granted Critical
Publication of TWI282621B publication Critical patent/TWI282621B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
TW094144658A 2004-12-16 2005-12-16 CMOS image sensors having pixel arrays with uniform light sensitivity TWI282621B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040107181A KR100690880B1 (ko) 2004-12-16 2004-12-16 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
US11/264,437 US7710477B2 (en) 2004-12-16 2005-11-01 CMOS image sensors having pixel arrays with uniform light sensitivity

Publications (2)

Publication Number Publication Date
TW200627637A TW200627637A (en) 2006-08-01
TWI282621B true TWI282621B (en) 2007-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144658A TWI282621B (en) 2004-12-16 2005-12-16 CMOS image sensors having pixel arrays with uniform light sensitivity

Country Status (3)

Country Link
JP (1) JP2006173634A (https=)
DE (1) DE102005060518B4 (https=)
TW (1) TWI282621B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9235285B2 (en) 2013-05-13 2016-01-12 Himax Technologies Limited Pixel matrix, touch display device and drving method thereof
CN104412129B (zh) * 2012-06-20 2018-05-25 皇家飞利浦有限公司 X射线探测器像素布局

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7598581B2 (en) 2005-09-12 2009-10-06 Crosstek Capital, LLC Image sensor with decreased optical interference between adjacent pixels
JP5245267B2 (ja) * 2007-03-23 2013-07-24 セイコーエプソン株式会社 固体撮像装置
JP5274166B2 (ja) * 2008-09-10 2013-08-28 キヤノン株式会社 光電変換装置及び撮像システム
JP4978614B2 (ja) 2008-11-25 2012-07-18 ソニー株式会社 固体撮像装置
JP5109962B2 (ja) 2008-12-22 2012-12-26 ソニー株式会社 固体撮像装置および電子機器
JP5763474B2 (ja) * 2010-08-27 2015-08-12 株式会社半導体エネルギー研究所 光センサ
JP6071183B2 (ja) * 2011-10-20 2017-02-01 キヤノン株式会社 固体撮像装置およびカメラ
JP5539458B2 (ja) * 2012-07-26 2014-07-02 キヤノン株式会社 光電変換装置および光電変換装置を用いた撮像システム
JP2016115815A (ja) 2014-12-15 2016-06-23 キヤノン株式会社 撮像装置および撮像システム
CN109920808B (zh) * 2017-12-13 2024-05-14 松下知识产权经营株式会社 摄像装置
US10852182B2 (en) * 2018-06-29 2020-12-01 Osram Opto Semiconductors Gmbh Ambient light detector, detector array and method
KR102609559B1 (ko) * 2019-04-10 2023-12-04 삼성전자주식회사 공유 픽셀들을 포함하는 이미지 센서
US11086452B2 (en) * 2019-11-27 2021-08-10 Au Optronics Corporation Pixel array substrate
CN113410176B (zh) * 2020-03-16 2023-10-27 合肥晶合集成电路股份有限公司 Oled器件及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1140539A (ja) * 1997-07-18 1999-02-12 Mitsuteru Kimura フローティング部を有する半導体装置及びフローティング単結晶薄膜の形成方法
JP2000124438A (ja) * 1998-10-19 2000-04-28 Toshiba Corp 固体撮像装置
JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104412129B (zh) * 2012-06-20 2018-05-25 皇家飞利浦有限公司 X射线探测器像素布局
US9235285B2 (en) 2013-05-13 2016-01-12 Himax Technologies Limited Pixel matrix, touch display device and drving method thereof

Also Published As

Publication number Publication date
TW200627637A (en) 2006-08-01
DE102005060518A1 (de) 2006-08-03
JP2006173634A (ja) 2006-06-29
DE102005060518B4 (de) 2015-02-19

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