DE1014673B - Verfahren zur Herstellung halbleitender Germaniumkristalle mit AEtzvertiefungen fuer lichtelektrische Einrichtungen - Google Patents
Verfahren zur Herstellung halbleitender Germaniumkristalle mit AEtzvertiefungen fuer lichtelektrische EinrichtungenInfo
- Publication number
- DE1014673B DE1014673B DES27577A DES0027577A DE1014673B DE 1014673 B DE1014673 B DE 1014673B DE S27577 A DES27577 A DE S27577A DE S0027577 A DES0027577 A DE S0027577A DE 1014673 B DE1014673 B DE 1014673B
- Authority
- DE
- Germany
- Prior art keywords
- germanium
- zinc
- crystals
- light
- semiconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052732 germanium Inorganic materials 0.000 title claims description 66
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 64
- 239000013078 crystal Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005530 etching Methods 0.000 title claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 41
- 239000011701 zinc Substances 0.000 claims description 41
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 230000002452 interceptive effect Effects 0.000 claims 1
- 238000010792 warming Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229940056932 lead sulfide Drugs 0.000 description 2
- 229910052981 lead sulfide Inorganic materials 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 150000002739 metals Chemical group 0.000 description 2
- 239000011049 pearl Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101100117236 Drosophila melanogaster speck gene Proteins 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000010871 livestock manure Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002574 poison Substances 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J7/00—Hammers; Forging machines with hammers or die jaws acting by impact
- B21J7/02—Special design or construction
- B21J7/14—Forging machines working with several hammers
- B21J7/16—Forging machines working with several hammers in rotary arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US214969A US2773925A (en) | 1951-03-10 | 1951-03-10 | Electrical translator and methods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1014673B true DE1014673B (de) | 1957-08-29 |
Family
ID=22801111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES27577A Pending DE1014673B (de) | 1951-03-10 | 1952-03-10 | Verfahren zur Herstellung halbleitender Germaniumkristalle mit AEtzvertiefungen fuer lichtelektrische Einrichtungen |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0002433A3 (en) * | 1977-12-08 | 1979-07-11 | International Business Machines Corporation | Process for making silicon photoelements |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2858246A (en) * | 1957-04-22 | 1958-10-28 | Bell Telephone Labor Inc | Silicon single crystal conductor devices |
| US3038241A (en) * | 1958-12-22 | 1962-06-12 | Sylvania Electric Prod | Semiconductor device |
| DE1160959B (de) * | 1958-12-31 | 1964-01-09 | Texas Instruments Inc | Lichtelektrische Vorrichtung |
| US3105906A (en) * | 1959-11-24 | 1963-10-01 | Rca Corp | Germanium silicon alloy semiconductor detector for infrared radiation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE494348A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-04-29 | |||
| US2428537A (en) * | 1942-07-20 | 1947-10-07 | Veszi Gabor Adam | Series photoelectric cells |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US817664A (en) * | 1904-12-27 | 1906-04-10 | Pacific Wireless Telegraph Company | Contact device. |
| US2514879A (en) * | 1945-07-13 | 1950-07-11 | Purdue Research Foundation | Alloys and rectifiers made thereof |
| US2504628A (en) * | 1946-03-23 | 1950-04-18 | Purdue Research Foundation | Electrical device with germanium alloys |
| IT454648A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-04-06 |
-
0
- NL NL7712127.A patent/NL167899B/xx unknown
- NL NL91411D patent/NL91411C/xx active
-
1951
- 1951-03-10 US US214969A patent/US2773925A/en not_active Expired - Lifetime
-
1952
- 1952-03-06 GB GB5893/52A patent/GB723996A/en not_active Expired
- 1952-03-10 DE DES27577A patent/DE1014673B/de active Pending
- 1952-03-10 FR FR1058891D patent/FR1058891A/fr not_active Expired
- 1952-03-11 FR FR1058894D patent/FR1058894A/fr not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2428537A (en) * | 1942-07-20 | 1947-10-07 | Veszi Gabor Adam | Series photoelectric cells |
| BE494348A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1949-04-29 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0002433A3 (en) * | 1977-12-08 | 1979-07-11 | International Business Machines Corporation | Process for making silicon photoelements |
Also Published As
| Publication number | Publication date |
|---|---|
| US2773925A (en) | 1956-12-11 |
| FR1058891A (fr) | 1954-03-19 |
| GB723996A (en) | 1955-02-16 |
| NL91411C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | |
| FR1058894A (fr) | 1954-03-19 |
| NL167899B (nl) |
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