DE1012697B - p-s-n- und p-i-n-Gleichrichter - Google Patents

p-s-n- und p-i-n-Gleichrichter

Info

Publication number
DE1012697B
DE1012697B DES41476A DES0041476A DE1012697B DE 1012697 B DE1012697 B DE 1012697B DE S41476 A DES41476 A DE S41476A DE S0041476 A DES0041476 A DE S0041476A DE 1012697 B DE1012697 B DE 1012697B
Authority
DE
Germany
Prior art keywords
central zone
rectifier
highly doped
thickness
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES41476A
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Adolf Herlet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL201810D priority Critical patent/NL201810A/xx
Priority to NL104352D priority patent/NL104352C/xx
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES41476A priority patent/DE1012697B/de
Priority to CH338244D priority patent/CH338244A/de
Priority to FR1140397D priority patent/FR1140397A/fr
Priority to GB31951/55A priority patent/GB798359A/en
Priority to US565144A priority patent/US2843516A/en
Publication of DE1012697B publication Critical patent/DE1012697B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DES41476A 1954-11-08 1954-11-08 p-s-n- und p-i-n-Gleichrichter Pending DE1012697B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL201810D NL201810A (https=) 1954-11-08
NL104352D NL104352C (https=) 1954-11-08
DES41476A DE1012697B (de) 1954-11-08 1954-11-08 p-s-n- und p-i-n-Gleichrichter
CH338244D CH338244A (de) 1954-11-08 1955-11-01 p-n-Gleichrichter mit Mittelzone
FR1140397D FR1140397A (fr) 1954-11-08 1955-11-07 Redresseur de type p-n à zone médiane
GB31951/55A GB798359A (en) 1954-11-08 1955-11-08 Improvements in or relating to p-i-n rectifiers
US565144A US2843516A (en) 1954-11-08 1956-02-13 Semiconductor junction rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES41476A DE1012697B (de) 1954-11-08 1954-11-08 p-s-n- und p-i-n-Gleichrichter

Publications (1)

Publication Number Publication Date
DE1012697B true DE1012697B (de) 1957-07-25

Family

ID=7484001

Family Applications (1)

Application Number Title Priority Date Filing Date
DES41476A Pending DE1012697B (de) 1954-11-08 1954-11-08 p-s-n- und p-i-n-Gleichrichter

Country Status (5)

Country Link
CH (1) CH338244A (https=)
DE (1) DE1012697B (https=)
FR (1) FR1140397A (https=)
GB (1) GB798359A (https=)
NL (2) NL104352C (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1093021B (de) * 1959-01-24 1960-11-17 Telefunken Gmbh Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen
DE1127489B (de) * 1958-06-18 1962-04-12 Western Electric Co Halbleiterdiode zur Spannungsbegrenzung
DE1255134B (de) * 1959-01-14 1967-11-30 Shockley Transistor Corp Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1127489B (de) * 1958-06-18 1962-04-12 Western Electric Co Halbleiterdiode zur Spannungsbegrenzung
DE1255134B (de) * 1959-01-14 1967-11-30 Shockley Transistor Corp Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens
DE1255134C2 (de) * 1959-01-14 1973-04-05 Shockley Transistor Corp Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens
DE1093021B (de) * 1959-01-24 1960-11-17 Telefunken Gmbh Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen

Also Published As

Publication number Publication date
NL104352C (https=)
GB798359A (en) 1958-07-16
CH338244A (de) 1959-05-15
NL201810A (https=)
FR1140397A (fr) 1957-07-19

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