DE10042947A1 - Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis - Google Patents

Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis

Info

Publication number
DE10042947A1
DE10042947A1 DE10042947A DE10042947A DE10042947A1 DE 10042947 A1 DE10042947 A1 DE 10042947A1 DE 10042947 A DE10042947 A DE 10042947A DE 10042947 A DE10042947 A DE 10042947A DE 10042947 A1 DE10042947 A1 DE 10042947A1
Authority
DE
Germany
Prior art keywords
layer
gan
radiation
layers
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10042947A
Other languages
German (de)
English (en)
Inventor
Berthold Hahn
Michael Fehrer
Hans-Juergen Lugauer
Stefan Bader
Volker Haerle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE10042947A priority Critical patent/DE10042947A1/de
Priority to TW090121292A priority patent/TW584971B/zh
Priority to JP2002524235A priority patent/JP4177097B2/ja
Priority to EP01967062A priority patent/EP1314209B1/de
Priority to PCT/DE2001/003348 priority patent/WO2002019439A1/de
Priority to CN018181406A priority patent/CN1471735B/zh
Publication of DE10042947A1 publication Critical patent/DE10042947A1/de
Priority to US10/377,363 priority patent/US6849878B2/en
Priority to US11/017,615 priority patent/US7105370B2/en
Priority to JP2007072671A priority patent/JP5183085B2/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
DE10042947A 2000-08-31 2000-08-31 Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis Withdrawn DE10042947A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE10042947A DE10042947A1 (de) 2000-08-31 2000-08-31 Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
TW090121292A TW584971B (en) 2000-08-31 2001-08-30 Light-emitting semiconductor element on GaN basis and its epitaxial production method
JP2002524235A JP4177097B2 (ja) 2000-08-31 2001-08-31 Ｉｉｉ−ｖ窒化物半導体ベースの放射線を発する半導体チップを製造する方法および放射線を発する半導体チップ
EP01967062A EP1314209B1 (de) 2000-08-31 2001-08-31 Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips auf iii-v-nitridhalbleiter-basis und strahlungsemittierender halbleiterchip
PCT/DE2001/003348 WO2002019439A1 (de) 2000-08-31 2001-08-31 Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips auf iii-v-nitridhalbleiter-basis und strahlungsemittierender halbleiterchip
CN018181406A CN1471735B (zh) 2000-08-31 2001-08-31 一种led芯片及其制造方法
US10/377,363 US6849878B2 (en) 2000-08-31 2003-02-28 Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip
US11/017,615 US7105370B2 (en) 2000-08-31 2004-12-20 Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor
JP2007072671A JP5183085B2 (ja) 2000-08-31 2007-03-20 放射線を発する半導体チップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10042947A DE10042947A1 (de) 2000-08-31 2000-08-31 Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis

Publications (1)

Publication Number Publication Date
DE10042947A1 true DE10042947A1 (de) 2002-03-21

Family

ID=7654526

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10042947A Withdrawn DE10042947A1 (de) 2000-08-31 2000-08-31 Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis

Country Status (7)

Country Link
US (2) US6849878B2 (zh)
EP (1) EP1314209B1 (zh)
JP (2) JP4177097B2 (zh)
CN (1) CN1471735B (zh)
DE (1) DE10042947A1 (zh)
TW (1) TW584971B (zh)
WO (1) WO2002019439A1 (zh)

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US7049207B2 (en) * 2002-05-20 2006-05-23 Sony Corporation Isolating method and transferring method for semiconductor devices
DE102009060749A1 (de) * 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronischer Halbleiterchip und Verwendung einer auf AIGaN basierenden Zwischenschicht
US8288787B2 (en) 2002-06-26 2012-10-16 Lg Electronics, Inc. Thin film light emitting diode
WO2019166194A1 (de) * 2018-03-02 2019-09-06 Osram Opto Semiconductors Gmbh Verfahren zur herstellung einer mehrzahl von transferierbaren bauteilen und bauteilverbund aus bauteilen
WO2019166195A1 (de) * 2018-03-02 2019-09-06 Osram Opto Semiconductors Gmbh Bauteilverbund aus optischen bauteilen, verfahren zur herstellung eines bauteilverbunds und bauelement mit einem optischen bauteil

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CN1252837C (zh) * 2000-04-26 2006-04-19 奥斯兰姆奥普托半导体股份有限两合公司 在GaN基板上的发光二极管芯片和用GaN基板上的发光二极管芯片制造发光二极管元件的方法
EP1277240B1 (de) * 2000-04-26 2015-05-20 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines lichtmittierenden Halbleiterbauelements
DE10051465A1 (de) * 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
TWI292227B (en) * 2000-05-26 2008-01-01 Osram Opto Semiconductors Gmbh Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan
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DE10245631B4 (de) * 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
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DE10350707B4 (de) * 2003-02-26 2014-02-13 Osram Opto Semiconductors Gmbh Elektrischer Kontakt für optoelektronischen Halbleiterchip und Verfahren zu dessen Herstellung
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US7238596B2 (en) * 2003-06-13 2007-07-03 Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs
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EP1314209B1 (de) 2012-10-03
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JP5183085B2 (ja) 2013-04-17
EP1314209A1 (de) 2003-05-28
CN1471735B (zh) 2010-05-26
US7105370B2 (en) 2006-09-12
US6849878B2 (en) 2005-02-01
TW584971B (en) 2004-04-21
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US20030197170A1 (en) 2003-10-23
CN1471735A (zh) 2004-01-28
JP2007201493A (ja) 2007-08-09

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