DD141082A5 - Datenspeicherzelle - Google Patents

Datenspeicherzelle Download PDF

Info

Publication number
DD141082A5
DD141082A5 DD78206347A DD20634778A DD141082A5 DD 141082 A5 DD141082 A5 DD 141082A5 DD 78206347 A DD78206347 A DD 78206347A DD 20634778 A DD20634778 A DD 20634778A DD 141082 A5 DD141082 A5 DD 141082A5
Authority
DD
German Democratic Republic
Prior art keywords
bit
voltage
amplifier
line
cell
Prior art date
Application number
DD78206347A
Other languages
German (de)
English (en)
Inventor
Madhukar L Joshi
Wilbur D Pricer
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of DD141082A5 publication Critical patent/DD141082A5/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DD78206347A 1977-06-30 1978-06-28 Datenspeicherzelle DD141082A5 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/811,812 US4168536A (en) 1977-06-30 1977-06-30 Capacitor memory with an amplified cell signal

Publications (1)

Publication Number Publication Date
DD141082A5 true DD141082A5 (de) 1980-04-09

Family

ID=25207659

Family Applications (1)

Application Number Title Priority Date Filing Date
DD78206347A DD141082A5 (de) 1977-06-30 1978-06-28 Datenspeicherzelle

Country Status (17)

Country Link
US (1) US4168536A (nl)
JP (1) JPS5813997B2 (nl)
AT (1) AT373432B (nl)
AU (1) AU514832B2 (nl)
BE (1) BE868453A (nl)
BR (1) BR7803995A (nl)
CA (1) CA1114504A (nl)
CH (1) CH636469A5 (nl)
DD (1) DD141082A5 (nl)
DE (1) DE2818783C3 (nl)
ES (1) ES470267A1 (nl)
FR (1) FR2396386A1 (nl)
GB (1) GB1563479A (nl)
IT (1) IT1112637B (nl)
NL (1) NL7807049A (nl)
SE (1) SE7806951L (nl)
SU (1) SU1076001A3 (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619585A (en) * 1979-07-26 1981-02-24 Toshiba Corp Semiconductor memory unit
GB2070329B (en) * 1980-01-25 1983-10-26 Tokyo Shibaura Electric Co Semiconductor memory device
JPS5948477B2 (ja) * 1980-03-31 1984-11-27 富士通株式会社 半導体記憶装置
DE3671124D1 (de) * 1985-02-13 1990-06-13 Toshiba Kawasaki Kk Halbleiterspeicherzelle.
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
CA1322250C (en) * 1987-08-31 1993-09-14 Loren Thomas Lancaster Active dynamic memory cell
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
JP2575152B2 (ja) * 1987-10-22 1997-01-22 日宝化学株式会社 ヨウ素の回収装置
US4999811A (en) * 1987-11-30 1991-03-12 Texas Instruments Incorporated Trench DRAM cell with dynamic gain
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4970689A (en) * 1988-03-07 1990-11-13 International Business Machines Corporation Charge amplifying trench memory cell
US9741417B1 (en) * 2016-10-14 2017-08-22 Nxp Usa, Inc. Sense amplifier circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3652914A (en) * 1970-11-09 1972-03-28 Emerson Electric Co Variable direct voltage memory circuit
US3827034A (en) * 1972-09-14 1974-07-30 Ferranti Ltd Semiconductor information storage devices
DE2456893A1 (de) * 1974-12-02 1976-08-12 Siemens Ag Speicherelement

Also Published As

Publication number Publication date
NL7807049A (nl) 1979-01-03
AU514832B2 (en) 1981-02-26
SE7806951L (sv) 1978-12-31
SU1076001A3 (ru) 1984-02-23
AT373432B (de) 1984-01-25
BR7803995A (pt) 1979-04-03
JPS5813997B2 (ja) 1983-03-16
CA1114504A (en) 1981-12-15
AU3488378A (en) 1979-10-11
US4168536A (en) 1979-09-18
DE2818783C3 (de) 1980-11-27
BE868453A (fr) 1978-10-16
ATA322178A (de) 1983-05-15
GB1563479A (en) 1980-03-26
DE2818783A1 (de) 1979-01-04
IT7824494A0 (it) 1978-06-13
FR2396386B1 (nl) 1982-11-26
DE2818783B2 (nl) 1980-03-20
IT1112637B (it) 1986-01-20
FR2396386A1 (fr) 1979-01-26
ES470267A1 (es) 1979-09-16
JPS5413234A (en) 1979-01-31
CH636469A5 (de) 1983-05-31

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