FR2396386A1 - Circuits de cellule de memoire - Google Patents

Circuits de cellule de memoire

Info

Publication number
FR2396386A1
FR2396386A1 FR7818480A FR7818480A FR2396386A1 FR 2396386 A1 FR2396386 A1 FR 2396386A1 FR 7818480 A FR7818480 A FR 7818480A FR 7818480 A FR7818480 A FR 7818480A FR 2396386 A1 FR2396386 A1 FR 2396386A1
Authority
FR
France
Prior art keywords
memory cell
cell circuits
capacitor
circuit
amplifies
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7818480A
Other languages
English (en)
Other versions
FR2396386B1 (fr
Inventor
L Joshi
Wilbur D Pricer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2396386A1 publication Critical patent/FR2396386A1/fr
Application granted granted Critical
Publication of FR2396386B1 publication Critical patent/FR2396386B1/fr
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne les cellules de mémoire. La cellule 10 se compose d'un circuit série comprenant le condensateur d'emmagasinage 14 et une impédance 16. Ce circuit est relié d'un côté à la masse et de l'autre à une ligne de bit/détection et comporte en outre un dispositif de couplage sélectif 12 commandé par une ligne de mot 22. Un amplificateur 20 amplifie le signal résultant de la charge contenue dans le condensateur 14. Applicable notamment dans la fabrication de mémoires d'ordinateurs.
FR7818480A 1977-06-30 1978-06-13 Circuits de cellule de memoire Granted FR2396386A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/811,812 US4168536A (en) 1977-06-30 1977-06-30 Capacitor memory with an amplified cell signal

Publications (2)

Publication Number Publication Date
FR2396386A1 true FR2396386A1 (fr) 1979-01-26
FR2396386B1 FR2396386B1 (fr) 1982-11-26

Family

ID=25207659

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7818480A Granted FR2396386A1 (fr) 1977-06-30 1978-06-13 Circuits de cellule de memoire

Country Status (17)

Country Link
US (1) US4168536A (fr)
JP (1) JPS5813997B2 (fr)
AT (1) AT373432B (fr)
AU (1) AU514832B2 (fr)
BE (1) BE868453A (fr)
BR (1) BR7803995A (fr)
CA (1) CA1114504A (fr)
CH (1) CH636469A5 (fr)
DD (1) DD141082A5 (fr)
DE (1) DE2818783C3 (fr)
ES (1) ES470267A1 (fr)
FR (1) FR2396386A1 (fr)
GB (1) GB1563479A (fr)
IT (1) IT1112637B (fr)
NL (1) NL7807049A (fr)
SE (1) SE7806951L (fr)
SU (1) SU1076001A3 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191435A2 (fr) * 1985-02-13 1986-08-20 Kabushiki Kaisha Toshiba Cellule de mémoire semi-conductrice

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5619585A (en) * 1979-07-26 1981-02-24 Toshiba Corp Semiconductor memory unit
GB2070329B (en) * 1980-01-25 1983-10-26 Tokyo Shibaura Electric Co Semiconductor memory device
JPS5948477B2 (ja) * 1980-03-31 1984-11-27 富士通株式会社 半導体記憶装置
US4677589A (en) * 1985-07-26 1987-06-30 Advanced Micro Devices, Inc. Dynamic random access memory cell having a charge amplifier
CA1322250C (fr) * 1987-08-31 1993-09-14 Loren Thomas Lancaster Cellule de memoire dynamique active
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
JP2575152B2 (ja) * 1987-10-22 1997-01-22 日宝化学株式会社 ヨウ素の回収装置
US4999811A (en) * 1987-11-30 1991-03-12 Texas Instruments Incorporated Trench DRAM cell with dynamic gain
US4914740A (en) * 1988-03-07 1990-04-03 International Business Corporation Charge amplifying trench memory cell
US4970689A (en) * 1988-03-07 1990-11-13 International Business Machines Corporation Charge amplifying trench memory cell
US9741417B1 (en) * 2016-10-14 2017-08-22 Nxp Usa, Inc. Sense amplifier circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3827034A (en) * 1972-09-14 1974-07-30 Ferranti Ltd Semiconductor information storage devices
DE2456893A1 (de) * 1974-12-02 1976-08-12 Siemens Ag Speicherelement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652914A (en) * 1970-11-09 1972-03-28 Emerson Electric Co Variable direct voltage memory circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3618053A (en) * 1969-12-31 1971-11-02 Westinghouse Electric Corp Trapped charge memory cell
US3827034A (en) * 1972-09-14 1974-07-30 Ferranti Ltd Semiconductor information storage devices
DE2456893A1 (de) * 1974-12-02 1976-08-12 Siemens Ag Speicherelement

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191435A2 (fr) * 1985-02-13 1986-08-20 Kabushiki Kaisha Toshiba Cellule de mémoire semi-conductrice
EP0191435A3 (en) * 1985-02-13 1988-08-10 Kabushiki Kaisha Toshiba Semiconductor memory cell
EP0340809A2 (fr) * 1985-02-13 1989-11-08 Kabushiki Kaisha Toshiba Cellule de mémoire à semi-conducteurs
EP0340809A3 (en) * 1985-02-13 1990-04-18 Kabushiki Kaisha Toshiba Semiconductor memory cell

Also Published As

Publication number Publication date
NL7807049A (nl) 1979-01-03
AU514832B2 (en) 1981-02-26
SE7806951L (sv) 1978-12-31
SU1076001A3 (ru) 1984-02-23
AT373432B (de) 1984-01-25
BR7803995A (pt) 1979-04-03
JPS5813997B2 (ja) 1983-03-16
CA1114504A (fr) 1981-12-15
AU3488378A (en) 1979-10-11
DD141082A5 (de) 1980-04-09
US4168536A (en) 1979-09-18
DE2818783C3 (de) 1980-11-27
BE868453A (fr) 1978-10-16
ATA322178A (de) 1983-05-15
GB1563479A (en) 1980-03-26
DE2818783A1 (de) 1979-01-04
IT7824494A0 (it) 1978-06-13
FR2396386B1 (fr) 1982-11-26
DE2818783B2 (fr) 1980-03-20
IT1112637B (it) 1986-01-20
ES470267A1 (es) 1979-09-16
JPS5413234A (en) 1979-01-31
CH636469A5 (de) 1983-05-31

Similar Documents

Publication Publication Date Title
FR2396386A1 (fr) Circuits de cellule de memoire
US4247791A (en) CMOS Memory sense amplifier
EP0306712A3 (fr) Amplificateur de détection pour mémoire RAM dynamique avec précharge modifiée de lignes de bit
JPS5891594A (ja) ダイナミツク型半導体記憶装置
EP0118878A3 (fr) Dispositif de mémoire semi-conducteur
EP0343344A3 (fr) Dispositif de mémoire à semi-conducteur avec indicateur de l'état de la structure de redondance
EP0449204A2 (fr) Dispositif de mémoire à semi-conducteur de type dynamique
EP0048464A2 (fr) Dispositif de mémoire semiconductrice
EP0834883A3 (fr) Dispositif de mémoire à semi-conducteur non volatile
KR920010624A (ko) 반도체기억장치
EP0464548A2 (fr) Dispositif de mémoire à semi-conducteurs
JPS57113482A (en) Semiconductor storage device
IE892758L (en) Integrated memory circuit comprising a parallel and serial¹input and output
EP0144223A2 (fr) Dispositif de mémoire semi-conductrice
US4400800A (en) Semiconductor RAM device
JPS641192A (en) Semiconductor storage device
GB1260603A (en) Storage circuit
US5027325A (en) Semiconductor memory device having circuit for reading-out and writing-in of data
EP0316877A3 (fr) Dispositif de mémoire à semi-conducteurs avec un circuit de sortie modifié
EP0189908A2 (fr) Mémoire dynamique comprenant un dispositif pour la précharge de lignes de bit
GB1260426A (en) Improvements in or relating to memory cells
EP0285125A3 (fr) Mémoire à semi-conducteurs avec un circuit d'entrée/de sortie parallèle
JPH02285593A (ja) 不揮発性半導体記憶装置
EP0010907A1 (fr) Dispositif de mémoire à semi-conducteur comprenant un circuit du type flip-flop
JPS5611687A (en) Semiconductor memory unit

Legal Events

Date Code Title Description
ST Notification of lapse