CN2626049Y - 一种非接触智能卡条带 - Google Patents
一种非接触智能卡条带 Download PDFInfo
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- CN2626049Y CN2626049Y CN 03231594 CN03231594U CN2626049Y CN 2626049 Y CN2626049 Y CN 2626049Y CN 03231594 CN03231594 CN 03231594 CN 03231594 U CN03231594 U CN 03231594U CN 2626049 Y CN2626049 Y CN 2626049Y
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4905—Shape
- H01L2224/4909—Loop shape arrangement
- H01L2224/49095—Loop shape arrangement parallel in plane
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
一种非接触智能卡条带,包括在模塑区内的金属底板、在该金属底板周围的接触片,其特征在于,所述的接触片呈拱形的凹凸结构,以增加单面模塑的拉力和结合力。采用了上述的技术解决方案,大大加强了封装后接触片与模塑料之间的结合力,例如:现有技术制成的金属条带在产品模塑后,通过拉力计测试,约几百克压力,接触点就会掉下;而用本实用新型的条带,拉力可达数倍,接触点才会掉下。而且本实用新型在经过以后的INLAY(芯层)和层压工序制成成品,其成品率和可靠性大大提高。
Description
技术领域
本实用新型涉及微电子半导体封装技术,尤其涉及非接触智能卡条带。
背景技术
如图1a和图1b所示,现有的非接触式智能卡用模块,总厚度非常薄,通常封装厚度小于0.40mm。封装时,首先将很薄的半导体芯片2,用快固化环氧3牢固地焊在条带1的封装中部的金属底板4上。然后用金丝5将芯片2上的焊点与条带1的接触片6互连。最后,将焊好金丝的整个器件用模塑7封装。其中,非接触模块的条带1为金属条带,厚度为0.06mm至0.10mm。
由于上述条带,其表面通常镀银,而接触片上的银与模塑料之间的粘附力较差。而且,为了减小整个模块的厚度,模塑料与镀银条带是单边封装。这样,模塑后的模块,粘结强度低,可靠性较差。
实用新型内容
本实用新型的目的在于提供一种能加强封装后接触片与模塑料之间的结合力,从而提高封装可靠性的非接触智能卡条带。
本实用新型所提供的一种非接触智能卡条带,包括在模塑区内的金属底板、在该金属底板周围的接触片,其特征在于,所述的接触片呈拱形的凹凸结构,以增加单面模塑的拉力和结合力。
上述的非接触智能卡条带,其中,接触片的凹凸结构在四角或二对边或二侧边上。
采用了上述的技术解决方案,大大加强了封装后接触片与模塑料之间的结合力,例如:现有技术制成的金属条带在产品模塑后,通过拉力计测试,约几百压力,接触点就会掉下;而用本实用新型的条带,压力可达几倍,接触点才会掉下。而且本实用新型在经过以后的INLAY(芯层)和层压工序制成成品,其成品率和可靠性大大提高。
附图说明
图1a、图1b分别是现有非接触式智能卡用模块的结构主视剖面图和俯视剖面图。
图2a、图2b分别是本实用新型第一实施结构条带安装在智能卡用模块中的结构主视剖面图和俯视剖面图。
图3a、图3b分别是本实用新型第二实施结构条带安装在智能卡用模块中的结构主视剖面图和左视剖面图。
图4a、图4b分别是本实用新型第三实施结构条带安装在智能卡用模块中的结构主视剖面图和左视剖面图。
具体实施方式
如图1a、图1b所示,本实用新型非接触智能卡条带,包括在模塑区内的金属底板4和在该金属底板周围的接触片6,接触片6呈拱形的凹凸结构,以增加单面模塑的拉力或结合力。
如图2a、图2b中的a部分所示,接触片的凹凸结构为四角上向模塑区内凸起约0.10~0.20mm的。
如图3a、图3b中的b部分所示,接触片的凹凸结构为二对边向模塑区内凸起约0.10~0.20mm的。
如图4a、图4b中的c部分所示,接触片的凹凸结构为二侧边向模塑区内凸起约0.10~0.20mm的。
经模塑后,在凸起的部分形成桥式状(如图2、图3、图4中的a,b,c所示)。这种结构大大加强了封装后引线与模塑料的拉力和结合力。
而且,该结构的形成,可以在金属条带冲制加工时,同时形成。不需增加额外成本。
本实用新型的桥式结构条带,完全与现有模块制造设备和工艺相兼容。与现有的芯片焊机,金丝球焊机和模塑机完全相容。
Claims (2)
1.一种非接触智能卡条带,包括在模塑区内的金属底板、在该金属底板周围的接触片,其特征在于,所述的接触片呈拱形的凹凸结构。
2.根据权利要求1所述的一种非接触智能卡条带,其特征在于:所述接触片的凹凸结构在四角或二对边或二侧边上。
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CN 03231594 CN2626049Y (zh) | 2003-05-28 | 2003-05-28 | 一种非接触智能卡条带 |
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CN 03231594 CN2626049Y (zh) | 2003-05-28 | 2003-05-28 | 一种非接触智能卡条带 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101853415A (zh) * | 2010-05-27 | 2010-10-06 | 上海浦江智能卡系统有限公司 | 一种表面有凹凸防伪纹的智能卡制造方法 |
CN102819759A (zh) * | 2012-06-29 | 2012-12-12 | 周宗涛 | 一种非接触大芯片智能卡的条带 |
-
2003
- 2003-05-28 CN CN 03231594 patent/CN2626049Y/zh not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101853415A (zh) * | 2010-05-27 | 2010-10-06 | 上海浦江智能卡系统有限公司 | 一种表面有凹凸防伪纹的智能卡制造方法 |
CN102819759A (zh) * | 2012-06-29 | 2012-12-12 | 周宗涛 | 一种非接触大芯片智能卡的条带 |
CN102819759B (zh) * | 2012-06-29 | 2015-09-30 | 周宗涛 | 一种非接触大芯片智能卡的条带 |
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Expiration termination date: 20130528 Granted publication date: 20040714 |