CN215988830U

CN215988830U - High-temperature-resistant light-emitting diode

Info

Publication number: CN215988830U
Application number: CN202122641640.9U
Authority: CN
Inventors: 黄伟帆
Original assignee: Shenzhen Jun Tian Heng Xun Technology Co ltd
Current assignee: Shenzhen Jun Tian Heng Xun Technology Co ltd
Priority date: 2021-10-30
Filing date: 2021-10-30
Publication date: 2022-03-08
Anticipated expiration: 2031-10-30

Abstract

The utility model relates to a high-temperature-resistant light-emitting diode, which comprises a heat dissipation base, wherein a wafer mounting groove is formed in the top of the heat dissipation base, an anode copper plate and a cathode copper plate are arranged at the bottom of the heat dissipation base, an LED wafer and silicon resin are arranged in the wafer mounting groove, the silicon resin encapsulates the LED wafer, the wafer mounting groove is filled with the silicon resin, the bottom surface of the LED wafer abuts against the top surface of the cathode copper plate, the anode copper plate is electrically connected with the LED wafer through a gold wire, the heat dissipation base is a ceramic base, and the anode copper plate and the cathode copper plate are embedded in the bottom of the heat dissipation base. The ceramic base is adopted to replace the traditional packaging base, the heat dissipation and structural stability of the ceramic base can be effectively improved, and the ceramic base has the advantages of strong mechanical stress resistance, stable shape, high strength, high thermal conductivity and high insulativity; strong binding force and corrosion resistance.

Description

High-temperature-resistant light-emitting diode

Technical Field

The utility model relates to the technical field of light emitting diodes, in particular to a high-temperature resistant light emitting diode.

Background

The development era of science and technology is continuously changing, which makes the market competition fierce, and along with the continuous improvement of living standard, the quality requirement of people on household electrical appliances is higher and higher. Only by continuously updating the product performance and prolonging the service life in an iterative way, the product advantages can be highlighted and can be clearly met from the market. In high-temperature products such as microwave ovens, steam ovens and the like, the high-temperature resistance of internal components such as illuminating lamp beads directly influences the performance and the service life of the products, so that higher requirements are put forward on the high-temperature resistance of the products under the high-temperature condition.

Current lighting lamp pearl adopts ordinary 3014, 3528, 2835 encapsulation LED lamp pearl, installs the fin base additional in the PCB bottom, not only occupies product space also increase cost.

The existing LED illuminating lamp bead uses a packaging substrate under a high-temperature condition, and has four defects: firstly, the PPA plastic shell is packaged, the mechanical stress is weak, the PPA plastic shell is easy to soften and deform at high temperature and is easy to age and become brittle at high temperature for a long time; secondly, the heat conductivity is poor, so that the heat dissipation of the lamp bead wafer is not facilitated, and the light decay of a product is accelerated to stop the lamp; thirdly, pollution exists, the PPA plastic material can be decomposed and volatilized to generate trace toxic gas at high temperature for a long time, and the PPA plastic material cannot be applied to food-grade products; fourthly, the expansion coefficient is large, and the lamp pearl inner structure connecting wire is easily damaged in the expansion under the high temperature and is bound, leading to the lamp that dies of inefficacy.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a high-temperature resistant light-emitting diode with a heat dissipation base, which has strong mechanical stress, good heat conductivity and small expansion coefficient.

The purpose of the utility model is realized as follows:

the utility model provides a high temperature resistant emitting diode, includes the heat dissipation base, the top of heat dissipation base is equipped with the wafer mounting groove, the bottom of heat dissipation base is equipped with positive pole copper and negative pole copper, be equipped with LED wafer and silicone resin in the wafer mounting groove, silicone resin encapsulation LED wafer, the wafer mounting groove is filled up to silicone resin, the bottom surface of LED wafer offsets with the top surface of negative pole copper, the positive pole copper passes through gold thread and LED wafer electric connection, the heat dissipation base is ceramic substrate, positive pole copper and negative pole copper are inlayed in the bottom of heat dissipation base. The ceramic base is adopted to replace the traditional packaging base, the heat dissipation and structural stability of the ceramic base can be effectively improved, and the ceramic base has the advantages of strong mechanical stress resistance, stable shape, high strength, high thermal conductivity and high insulativity; strong binding force and corrosion resistance.

The present invention may be further improved as follows.

And the bottom surface of the LED wafer is bonded with the top surface of the cathode copper plate.

The bottom surface of the LED wafer is bonded with the top surface of the cathode copper plate through silver colloid. Therefore, the cathode copper plate is electrically connected with the LED chip, and the electric conduction is stable.

The cathode copper plate and the anode copper plate are square, and the area of the cathode copper plate is larger than that of the anode copper plate, so that the cathode copper plate is easily abutted to the LED wafer and is electrically connected with the LED wafer.

The bottom of the heat dissipation base is provided with a first embedded groove corresponding to the position of the cathode copper plate, the first embedded groove is communicated with the wafer mounting groove up and down, and the bottom of the heat dissipation base is provided with a second embedded groove corresponding to the position of the anode copper plate, so that the heat dissipation base is small in overall size, thin in thickness and firm in fixation of the cathode copper plate and the anode copper plate.

The first embedded groove is provided with a first positioning column, the cathode copper plate is provided with a first positioning hole corresponding to the first positioning column, the second embedded groove is provided with a second positioning column, and the anode copper plate is provided with a second positioning hole corresponding to the second positioning column. Therefore, the cathode copper plate and the anode copper plate are firmly fixed.

The utility model has the following beneficial effects:

the ceramic base can effectively improve heat dissipation and structural stability, and has strong mechanical stress resistance, stable shape, high strength, high thermal conductivity and high insulativity; strong binding force and corrosion resistance.

Moreover, the heat dissipation base is easy to etch the circuit pad structure; no pollution and no public nuisance.

And in addition, the ceramic base has wide bearing temperature range (-55 ℃ to +850 ℃), small thermal expansion coefficient and stable structural performance.

Drawings

Fig. 1 is a schematic structural diagram of a high temperature resistant light emitting diode according to the present invention.

Fig. 2 is a schematic structural view of another angle of the high temperature resistant led of the present invention.

Fig. 3 is a top view of a high temperature resistant led of the present invention.

Fig. 4 is a bottom view of the high temperature resistant led of the present invention.

Fig. 5 is a side view of a high temperature resistant light emitting diode of the present invention.

Detailed Description

The utility model is further described with reference to the following figures and examples.

Embodiment one, as shown in fig. 1 to 5, a high temperature resistant light emitting diode, includes heat dissipation base 1, the top of heat dissipation base 1 is equipped with wafer mounting groove 14, the bottom of heat dissipation base 1 is equipped with positive pole copper 3 and negative pole copper 2, be equipped with LED wafer 4 and silicone resin 5 in the wafer mounting groove 14, silicone resin 5 encapsulates LED wafer 4, wafer mounting groove 14 is filled up to silicone resin 5, the bottom surface of LED wafer 4 offsets with the top surface of negative pole copper 2, positive pole copper 3 passes through gold thread 15 and LED wafer 4 electric connection, heat dissipation base 1 is the ceramic base, positive pole copper 3 and negative pole copper 2 are inlayed in the bottom of heat dissipation base 1.

The present invention is a more specific embodiment.

The bottom surface of the LED chip 4 is bonded with the top surface of the cathode copper plate 2.

The bottom surface of the LED wafer 4 is bonded with the top surface of the cathode copper plate 2 through silver glue.

The cathode copper plate 2 and the anode copper plate 3 are square, and the area of the cathode copper plate 2 is larger than that of the anode copper plate 3.

The bottom of heat dissipation base 1 corresponds the position of negative pole copper 2 and is equipped with first embedded groove 8, and first embedded groove 8 communicates from top to bottom with wafer mounting groove 14, the bottom of heat dissipation base 1 corresponds the position of positive pole copper 3 and is equipped with second embedded groove 9.

The first embedded groove 8 is provided with a first positioning column 6, the cathode copper plate 2 is provided with a first positioning hole 10 corresponding to the first positioning column 6, the second embedded groove 9 is provided with a second positioning column 7, and the anode copper plate 3 is provided with a second positioning hole 11 corresponding to the second positioning column 7.

Claims

1. The utility model provides a high temperature resistant emitting diode, includes the heat dissipation base, the top of heat dissipation base is equipped with the wafer mounting groove, the bottom of heat dissipation base is equipped with positive pole copper and negative pole copper, be equipped with LED wafer and silicone resin in the wafer mounting groove, silicone resin encapsulation LED wafer, the wafer mounting groove is filled up to silicone resin, the bottom surface of LED wafer offsets with the top surface of negative pole copper, the positive pole copper passes through gold thread and LED wafer electric connection, characterized by, the heat dissipation base is ceramic substrate, positive pole copper and negative pole copper are inlayed in the bottom of heat dissipation base.

2. The LED of claim 1, wherein the bottom surface of the LED chip is bonded to the top surface of the copper cathode plate.

3. The LED of claim 2, wherein the bottom surface of the LED chip is bonded to the top surface of the copper cathode plate by silver paste.

4. The led of claim 1, wherein said cathode and anode copper plates are square, and the area of said cathode copper plate is larger than the area of said anode copper plate.

5. The LED as claimed in claim 1, wherein the heat sink base has a first insertion groove at a bottom thereof corresponding to the position of the cathode copper plate, the first insertion groove being in upper and lower communication with the wafer mounting groove, and a second insertion groove at a bottom thereof corresponding to the position of the anode copper plate.

6. The LED as claimed in claim 5, wherein the first insertion groove is provided with a first positioning post, the cathode copper plate is provided with a first positioning hole corresponding to the first positioning post, the second insertion groove is provided with a second positioning post, and the anode copper plate is provided with a second positioning hole corresponding to the second positioning post.