CN201084731Y - A two-color chip-type light-emitting diode - Google Patents

A two-color chip-type light-emitting diode Download PDF

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Publication number
CN201084731Y
CN201084731Y CNU2007200528751U CN200720052875U CN201084731Y CN 201084731 Y CN201084731 Y CN 201084731Y CN U2007200528751 U CNU2007200528751 U CN U2007200528751U CN 200720052875 U CN200720052875 U CN 200720052875U CN 201084731 Y CN201084731 Y CN 201084731Y
Authority
CN
China
Prior art keywords
double
type led
substrate
flat type
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNU2007200528751U
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Chinese (zh)
Inventor
李军政
潘利兵
李绪锋
孟庆晨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Foshan NationStar Optoelectronics Co Ltd
Original Assignee
Foshan NationStar Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foshan NationStar Optoelectronics Co Ltd filed Critical Foshan NationStar Optoelectronics Co Ltd
Priority to CNU2007200528751U priority Critical patent/CN201084731Y/en
Application granted granted Critical
Publication of CN201084731Y publication Critical patent/CN201084731Y/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

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  • Led Device Packages (AREA)

Abstract

The utility model discloses a double-color flake type LED, which comprises two chips with different light-emitting colors, a substrate, and an encapsulation colloid for encapsulating the chips on the substrate. The utility model is characterized in that: the substrate is a metallic substrate with metal substrate electrode structure, conductive leads are used to perform connection between the chips and the electrode metallic substrate electrodes. The chips, the conductive leads and the electrode metallic substrates are encapsulated together by the encapsulation colloid, moreover the metallic substrates that are insulated each other are connected together and also the independent electrode portions are connected together. The utility model adopts the metallic substrate as the substrate of the double-color flake type LED, so as to improve heat dissipation capability of the double-color flake type LED. The utility model provides the double-color flake type LED with high light-emitting efficiency, low production cost and stable photoelectric property.

Description

A kind of double-colored flat type LED
Technical field
The utility model relates to the led technology field, more particularly relates to a kind of double-colored flat type LED.
Background technology
Double-colored flat type LED is widely used in indoor display screen, backlight, toy, decorative lighting etc., and the double-colored flat type LED of known structure all is to adopt the PCB printed substrate as substrate.As shown in Figure 1, be led based structure chart of known double-colored chip, primary structure comprises PCB printed substrate 7, electrode 2, chip 3-1,3-2, conductive lead wire 4, adhesive, epoxy resin.By conductive lead wire 4 double-colored flat type LED electrode 2-1,2-2 are connected with electrode on chip 3-1, the 3-2.Epoxy resin encapsulates chip 3-1,3-2, forms a double-colored flat type LED independence ray structure thus.
Adopt the double-colored flat type LED of printed substrate production to have the shortcoming that low, the aging decay of luminous efficiency is fast, heat dispersion is poor, production cost is high, particularly when application large tracts of land such as display screen are used, be easy to generate the phenomenon of change color inequality.
Summary of the invention
The purpose of this utility model is exactly that a kind of luminous efficiency height, the photoelectric characteristic that provide for the deficiency that solves prior art are stablized, production cost is low, the double-colored flat type LED of good heat dissipation effect.
The utility model is to adopt following technical solution to realize above-mentioned purpose: a kind of double-colored flat type LED, comprise two kinds of chips that glow color is different, substrate, with the packing colloid of Chip Packaging on substrate, it is characterized in that, described substrate is a metal substrate, according to the positive and negative electrode that is separated out double color plate formula light-emitting diode between light-emitting diode electrical characteristics demand substrate, chip and metal substrate electrode part are connected by conductive lead wire between dividing, packing colloid is with chip, conductive lead wire, metal substrate is packaged together, and forms a double-colored flat type LED independence ray structure thus.
As further specifying of such scheme, described chip links together by adhesive and metal substrate.
Two kinds of different chips of described glow color all are placed on the same base plan.
Described metal substrate electrode has four, and wherein two absolute electrodes are as the positive pole of double-colored flat type LED; Two other electrode is as the negative pole of double-colored flat type LED, and latter's electrode can interconnect, and also can have independently to be electrically connected characteristic.
Described metallic substrate surfaces is provided with the high coat of metal of luminous reflectivity.
Described metal substrate is provided with through hole, and packing colloid infiltrates the through hole on the metal substrate in forming process, to increase the adhesive strength between packing colloid and the metal substrate.
Described packing colloid adopts epoxy resin.
The beneficial effect that the present invention adopts above-mentioned technical solution to reach is:
1, adopt the substrate of the metal substrate of thermal conductivity ratio common line plate hight as double-colored flat type LED, strong guarantee the photoelectricity stability characteristic (quality) and the integral heat sink ability of device;
2, use the substrate of metal material substrate as double-colored flat type LED, the production material cost is starkly lower than the PCB printed substrate;
3, substrate surface coating is the high coat of metal of reflection coefficient, as silver etc., effectively improves the luminous reflectanc of substrate, improves the luminous efficiency of double-colored flat type LED;
4, increase the contact area of metal substrate and packing colloid, eliminate the side direction active force by through-hole structure simultaneously, guarantee the reliability of double-colored flat type LED.
Description of drawings
Fig. 1 is known double-colored chip light emitting diode construction schematic diagram;
Fig. 2 is the double-colored chip light emitting diode construction of a utility model schematic diagram.
Description of reference numerals: 1, metal substrate 2, electrode 2-1, anodal 2-2, anodal 2-3, negative pole 2-4, negative pole 3, chip 4, conductive lead wire 5, packing colloid 6, through hole 7, PCB printed substrate
Embodiment
As shown in Figure 2, the double-colored flat type LED of the utility model, comprise two kinds of different chips 3 of glow color, metal substrate 1, with the packing colloid 5 of Chip Packaging on the chip bearing substrate, in the present embodiment, packing colloid 5 adopts epoxy resin, and metal substrate 1 is by punching press or etching process moulding; The metal substrate electrode is connected with chip electrode by conductive lead wire 4, double-colored flat type LED electrode has four in the present embodiment, wherein two link together, therefore metal substrate is divided into three independent sectors, wherein two absolute electrode 2-1,2-2 are as the positive pole of double-colored flat type LED, negative pole 2-3 and negative pole 2-4 link together, and form a kind of double-colored flat type LED of lunar structure altogether; Chip 3 is placed in the centre position of metal substrate 1, chip 3 links together by adhesive and metal substrate 1, electrode 2-1,2-2,2-3,2-4 are distributed in the periphery of chip 3, be connected by conductive lead wire between chip 3 and the electrode metal substrate, epoxy resin with the pin package of chip 3, conductive lead wire 4, electrode metal substrate together, and three independent sectors of metal substrate 1 are linked together, form a double-colored flat type LED thus.
In the present embodiment, metal substrate 1 surface is provided with the high silver of promising luminous reflectivity as the metallic substrate surfaces coating material, can improve the luminous reflectanc of metal substrate; Described metal substrate 1 is provided with through hole, and epoxy resin infiltrates the through hole 6 on the metal substrate in forming process, therefore increases the adhesive strength between epoxy resin and the metal substrate.

Claims (8)

1. double-colored flat type LED, comprise two kinds of different chips of glow color, substrate, with the packing colloid of Chip Packaging on substrate, it is characterized in that, described substrate is a metal substrate, three or more part that metal substrate is divided into mutually insulated forms electrode, be connected by conductive lead wire between chip and the electrode metal electrode of substrate, packing colloid is packaged together chip, conductive lead wire, metal substrate, and separate electrode is partly linked together.
2. double-colored flat type LED according to claim 1 is characterized in that, two kinds of different chips of described glow color all are placed on the same metal substrate plane.
3. double-colored flat type LED according to claim 1 is characterized in that described chip links together by adhesive and metal substrate.
4. double-colored flat type LED according to claim 1, it is characterized in that, described metal substrate electrode has four, two positive poles that electrode is double-colored flat type LED wherein, two other electrode is as the negative pole of double-colored flat type LED, and two negative poles of double-colored flat type LED interconnect.
5. double-colored flat type LED according to claim 4 is characterized in that, and is separate between four electrodes of described metal substrate.
6. novel dual-color flat type LED according to claim 1 is characterized in that described metallic substrate surfaces is provided with the coat of metal with reflecting properties.
7. double-colored flat type LED according to claim 1 is characterized in that described metal substrate is provided with through hole.
8. double-colored flat type LED according to claim 1 is characterized in that, described packing colloid adopts epoxy resin.
CNU2007200528751U 2007-06-18 2007-06-18 A two-color chip-type light-emitting diode Expired - Lifetime CN201084731Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2007200528751U CN201084731Y (en) 2007-06-18 2007-06-18 A two-color chip-type light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2007200528751U CN201084731Y (en) 2007-06-18 2007-06-18 A two-color chip-type light-emitting diode

Publications (1)

Publication Number Publication Date
CN201084731Y true CN201084731Y (en) 2008-07-09

Family

ID=39627203

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2007200528751U Expired - Lifetime CN201084731Y (en) 2007-06-18 2007-06-18 A two-color chip-type light-emitting diode

Country Status (1)

Country Link
CN (1) CN201084731Y (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155180A (en) * 2018-01-02 2018-06-12 敦南微电子(无锡)有限公司 A kind of high-power thin patch formula bridge heap rectifier

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155180A (en) * 2018-01-02 2018-06-12 敦南微电子(无锡)有限公司 A kind of high-power thin patch formula bridge heap rectifier
CN108155180B (en) * 2018-01-02 2024-04-09 敦南微电子(无锡)有限公司 High-power thin-type patch bridge rectifier

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CX01 Expiry of patent term
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Granted publication date: 20080709