CN211265469U - 一种高度集成且小尺寸的WiFi SiP模组 - Google Patents

一种高度集成且小尺寸的WiFi SiP模组 Download PDF

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CN211265469U
CN211265469U CN202020255741.5U CN202020255741U CN211265469U CN 211265469 U CN211265469 U CN 211265469U CN 202020255741 U CN202020255741 U CN 202020255741U CN 211265469 U CN211265469 U CN 211265469U
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wifi
chip
dcdc
substrate
crystal oscillator
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胡孝伟
代文亮
黄志远
伊海伦
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Shanghai Sinbo Electronic Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本实用新型公开了一种高度集成且小尺寸的WiFi SiP模组，包括基板，DCDC电感、无源晶振、π型匹配电路、去耦电容、WiFi芯片、金线、Flash芯片和模塑料，所述DCDC电感、无源晶振、π型匹配电路、去耦电容、WiFi芯片均安装在基板上，Flash芯片安装在WiFi芯片上，本实用新型WiFi SiP采用的是系统级封装的形式，WiFi和Flash芯片选用的是裸die，其余器件选用的不影响性能的小尺寸器件，尺寸大幅度减小，只有传统WiFi模组(不含天线)的1/10左右。

Description

一种高度集成且小尺寸的WiFi SiP模组
技术领域
本实用新型涉及电子技术领域，具体是一种高度集成且小尺寸的WiFi SiP模组。
背景技术
传统的WiFi模组都是以PCBA的形式出现的，将WiFi芯片及其外围电路贴装在PCB上，所有芯片器件采用的都是封装器件，这就造成WiFi模组整体尺寸太大，在一些微型应用场景如可穿戴产品上，大尺寸的WiFi模组有很大的局限性。
实用新型内容
本实用新型的目的在于提供一种高度集成且小尺寸的WiFi SiP模组，以解决上述背景技术中提出的问题。
为实现上述目的，本实用新型提供如下技术方案：
一种高度集成且小尺寸的WiFi SiP模组，包括基板，DCDC电感、无源晶振、π型匹配电路、去耦电容、WiFi芯片、金线、Flash芯片和模塑料，所述DCDC电感、无源晶振、π型匹配电路、去耦电容、WiFi芯片均安装在基板上，Flash芯片安装在WiFi芯片上。
作为本实用新型的进一步技术方案：所述WiFi芯片和Flash芯片通过金线键合的方式，完成WiFi芯片和Flash芯片之间、WiFi芯片和基板之间的连接。
作为本实用新型的进一步技术方案：所述无源晶振、DCDC电感、去耦电容和π型匹配电路通过锡膏贴焊于基板上。
作为本实用新型的进一步技术方案：所述WiFi芯片通过DAF粘接在基板上，Flash芯片通过DAF粘接在WiFi芯片上。
作为本实用新型的进一步技术方案：所述基板的上方覆盖有模塑料，DCDC电感、无源晶振、π型匹配电路、去耦电容、WiFi芯片、金线和Flash芯片均位于基板和模塑料之间的腔体内。
与现有技术相比，本实用新型的有益效果是：本实用新型WiFi SiP采用的是系统级封装的形式，WiFi和Flash芯片选用的是裸die，其余器件选用的不影响性能的小尺寸器件，尺寸大幅度减小，只有传统WiFi模组(不含天线)的1/10左右。
附图说明
图1是WiFi SiP模组的内部俯视图；
图2是WiFi SiP模组的内部侧视图。
图中：基板-1，DCDC电感-2、无源晶振-3、π型匹配电路-4、去耦电容-5、WiFi芯片-6、金线-7、Flash芯片-8、模塑料-9。
具体实施方式
下面将结合本实用新型实施例中的附图，对本实用新型实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本实用新型一部分实施例，而不是全部的实施例。基于本实用新型中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本实用新型保护的范围。
实施例1：请参阅图1-2，包含了：基板1，以及贴装在基板上的WiFi芯片6、Flash芯片8、无源晶振3、DCDC电感2、去耦电容5，π型匹配电路4。
先将无源晶振3、DCDC电感2、去耦电容5和π型匹配电路4等元器件通过锡膏贴焊于设计加工好的基板1上；把WiFi芯片6和Flash芯片8从已经切割好的wafer上抓取下来，并贴在基板的DA(贴die)区域，利用DAF把WiFi芯片6和Flash芯片8粘接起来，并利用DAF把WiFi芯片6与基板1粘接起来；通过金线键合7的方式，完成芯片与芯片之间、芯片与基板之间的连接；将已经完成键合的产品放置于塑封模具的腔体内，通过加热compound(模塑料)，使模塑料9处于熔融状态，在压力的作用下，熔融的模塑料9充满整个模具腔体，冷却固化后形成模塑包封；最后打标并切割成单个的SiP产品。
实施例2：在实施例1的基础上，本实用新型的最终产品为LGA封装(LGA 24Pin 6.5×6.5×1.25mm)形式的WiFi SiP。内部芯片通过一系列的SiP封装技术，最终完成以对外尺寸为0.45×0.65mm，Pitch为0.75mm的引脚，中间为4块接地焊盘的LGA24的WiFi SiP。本WiFi SiP与WiFi模组(不含天线)的功能一致，但尺寸却只有1/10，并且低成本，真正实现了“零”外围电路，应用时外接天线即可，简化了系统设计和降低了PCB设计复杂度。
本实用新型的WiFi SiP采用的是系统级封装的形式，WiFi和Flash芯片选用的是裸die，其余器件选用的不影响性能的小尺寸器件，尺寸大幅度减小，只有传统WiFi模组(不含天线)的1/10左右。
对于本领域技术人员而言，显然本实用新型不限于上述示范性实施例的细节，而且在不背离本实用新型的精神或基本特征的情况下，能够以其他的具体形式实现本实用新型。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本实用新型的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本实用新型内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (5)

1.一种高度集成且小尺寸的WiFi SiP模组，包括基板(1)，DCDC电感(2)、无源晶振(3)、π型匹配电路(4)、去耦电容(5)、WiFi芯片(6)、金线(7)、Flash芯片(8)和模塑料(9)，其特征在于，所述DCDC电感(2)、无源晶振(3)、π型匹配电路(4)、去耦电容(5)、WiFi芯片(6)均安装在基板(1)上，Flash芯片(8)安装在WiFi芯片(6)上。
2.根据权利要求1所述的一种高度集成且小尺寸的WiFi SiP模组，其特征在于，所述WiFi芯片(6)和Flash芯片(8)通过金线(7)键合的方式，完成WiFi芯片(6)和Flash芯片(8)之间、WiFi芯片(6)和基板(1)之间的连接。
3.根据权利要求1所述的一种高度集成且小尺寸的WiFi SiP模组，其特征在于，所述无源晶振(3)、DCDC电感(2)、去耦电容(5)和π型匹配电路(4)通过锡膏贴焊于基板(1)上。
4.根据权利要求1所述的一种高度集成且小尺寸的WiFi SiP模组，其特征在于，所述WiFi芯片(6)通过DAF粘接在基板(1)上，Flash芯片(8)通过DAF粘接在WiFi芯片(6)上。
5.根据权利要求3所述的一种高度集成且小尺寸的WiFi SiP模组，其特征在于，所述基板(1)的上方覆盖有模塑料(9)，DCDC电感(2)、无源晶振(3)、π型匹配电路(4)、去耦电容(5)、WiFi芯片(6)、金线(7)和Flash芯片(8)均位于基板(1)和模塑料(9)之间的腔体内。
CN202020255741.5U 2020-03-05 2020-03-05 一种高度集成且小尺寸的WiFi SiP模组 Active CN211265469U (zh)

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