CN211150513U - 封装体 - Google Patents
封装体 Download PDFInfo
- Publication number
- CN211150513U CN211150513U CN201922119174.0U CN201922119174U CN211150513U CN 211150513 U CN211150513 U CN 211150513U CN 201922119174 U CN201922119174 U CN 201922119174U CN 211150513 U CN211150513 U CN 211150513U
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- 239000000758 substrate Substances 0.000 claims abstract description 81
- 229910000679 solder Inorganic materials 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 6
- 239000011889 copper foil Substances 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims 2
- 238000004806 packaging method and process Methods 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 45
- 238000000034 method Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 239000011265 semifinished product Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02381—Side view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910818512 | 2019-08-30 | ||
CN2019108185121 | 2019-08-30 |
Publications (1)
Publication Number | Publication Date |
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CN211150513U true CN211150513U (zh) | 2020-07-31 |
Family
ID=71776129
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201922119174.0U Active CN211150513U (zh) | 2019-08-30 | 2019-11-29 | 封装体 |
CN201911201211.0A Active CN112447534B (zh) | 2019-08-30 | 2019-11-29 | 封装体及其制备方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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CN201911201211.0A Active CN112447534B (zh) | 2019-08-30 | 2019-11-29 | 封装体及其制备方法 |
Country Status (2)
Country | Link |
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CN (2) | CN211150513U (zh) |
WO (1) | WO2021037233A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111977609A (zh) * | 2020-08-28 | 2020-11-24 | 青岛歌尔智能传感器有限公司 | 传感器封装结构及传感器封装工艺 |
WO2021037233A1 (zh) * | 2019-08-30 | 2021-03-04 | 天芯互联科技有限公司 | 封装体及其制备方法 |
CN112992874A (zh) * | 2019-12-17 | 2021-06-18 | 天芯互联科技有限公司 | 封装结构的制作方法及封装结构 |
CN114698235A (zh) * | 2020-12-31 | 2022-07-01 | 广州金升阳科技有限公司 | 一种双面塑封电源产品及其连接方法 |
CN115863304A (zh) * | 2023-02-07 | 2023-03-28 | 北京唯捷创芯精测科技有限责任公司 | 双面塑封的封装结构、封装方法、电路结构及电子设备 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011204765A (ja) * | 2010-03-24 | 2011-10-13 | Toshiba Corp | 半導体装置の製造方法及び半導体装置 |
US8648470B2 (en) * | 2011-01-21 | 2014-02-11 | Stats Chippac, Ltd. | Semiconductor device and method of forming FO-WLCSP with multiple encapsulants |
US8810012B2 (en) * | 2011-11-15 | 2014-08-19 | Xintec Inc. | Chip package, method for forming the same, and package wafer |
CN103632988B (zh) * | 2012-08-28 | 2016-10-19 | 宏启胜精密电子(秦皇岛)有限公司 | 层叠封装结构及其制作方法 |
CN104701272B (zh) * | 2015-03-23 | 2017-08-25 | 矽力杰半导体技术(杭州)有限公司 | 一种芯片封装组件及其制造方法 |
US10141276B2 (en) * | 2016-09-09 | 2018-11-27 | Powertech Technology Inc. | Semiconductor package structure and manufacturing method thereof |
CN108109973A (zh) * | 2016-11-25 | 2018-06-01 | 同欣电子工业股份有限公司 | 芯片封装结构及其制造方法 |
CN108807325A (zh) * | 2017-05-04 | 2018-11-13 | 无锡天芯互联科技有限公司 | 一种新型的芯片封装结构及其制作方法 |
CN107564825B (zh) * | 2017-08-29 | 2018-09-21 | 睿力集成电路有限公司 | 一种芯片双面封装结构及其制造方法 |
CN107644867A (zh) * | 2017-09-07 | 2018-01-30 | 维沃移动通信有限公司 | 一种PoP封装件及其制作方法 |
CN107749411B (zh) * | 2017-09-25 | 2019-11-01 | 江苏长电科技股份有限公司 | 双面SiP的三维封装结构 |
CN211150513U (zh) * | 2019-08-30 | 2020-07-31 | 无锡天芯互联科技有限公司 | 封装体 |
-
2019
- 2019-11-29 CN CN201922119174.0U patent/CN211150513U/zh active Active
- 2019-11-29 CN CN201911201211.0A patent/CN112447534B/zh active Active
-
2020
- 2020-08-28 WO PCT/CN2020/112226 patent/WO2021037233A1/zh active Application Filing
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021037233A1 (zh) * | 2019-08-30 | 2021-03-04 | 天芯互联科技有限公司 | 封装体及其制备方法 |
CN112992874A (zh) * | 2019-12-17 | 2021-06-18 | 天芯互联科技有限公司 | 封装结构的制作方法及封装结构 |
WO2021120837A1 (zh) * | 2019-12-17 | 2021-06-24 | 天芯互联科技有限公司 | 封装结构的制作方法及封装结构 |
CN112992874B (zh) * | 2019-12-17 | 2022-11-15 | 天芯互联科技有限公司 | 封装结构的制作方法及封装结构 |
CN111977609A (zh) * | 2020-08-28 | 2020-11-24 | 青岛歌尔智能传感器有限公司 | 传感器封装结构及传感器封装工艺 |
CN114698235A (zh) * | 2020-12-31 | 2022-07-01 | 广州金升阳科技有限公司 | 一种双面塑封电源产品及其连接方法 |
CN115863304A (zh) * | 2023-02-07 | 2023-03-28 | 北京唯捷创芯精测科技有限责任公司 | 双面塑封的封装结构、封装方法、电路结构及电子设备 |
Also Published As
Publication number | Publication date |
---|---|
CN112447534A (zh) | 2021-03-05 |
WO2021037233A1 (zh) | 2021-03-04 |
CN112447534B (zh) | 2023-12-15 |
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GR01 | Patent grant | ||
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CP01 | Change in the name or title of a patent holder |
Address after: 518000 No.3 huanping Road, Gaoqiao community, Pingdi street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Tianxin Internet Technology Co.,Ltd. Address before: 518000 No.3 huanping Road, Gaoqiao community, Pingdi street, Longgang District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Tianxin Internet Technology Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP03 | Change of name, title or address |
Address after: 518000 No.3 huanping Road, Gaoqiao community, Pingdi street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Tianxin Internet Technology Co.,Ltd. Address before: 214028 East Building, service building, area F, China Sensor Network International Innovation Park, 200 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province:18 Changjiang East Road, Xinwu District, Wuxi City) 214028 East Building, service building, zone F, China Sensor Network International Innovation Park, No. 200, Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province (place of business: No. 18, Changjiang East Road, Xinwu District, Wuxi City) Patentee before: WUXI SKY CHIP INTERCONNECTION TECHNOLOGY Co.,Ltd. |
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CP03 | Change of name, title or address |