CN210379023U - 顶部可扩展散热片超高散热封装结构 - Google Patents

顶部可扩展散热片超高散热封装结构 Download PDF

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CN210379023U
CN210379023U CN201921233681.0U CN201921233681U CN210379023U CN 210379023 U CN210379023 U CN 210379023U CN 201921233681 U CN201921233681 U CN 201921233681U CN 210379023 U CN210379023 U CN 210379023U
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杨建伟
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China Chippacking Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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Abstract

本实用新型涉及一种顶部可扩展散热片超高散热封装结构,包括芯片、散热片、引脚和塑封料,芯片固定在散热片上,芯片通过金属丝与引脚连接,塑封料将芯片、引脚和散热片塑封,散热片的下表面与塑封料下表面平齐,引脚的上表面与塑封料上表面平齐,散热片至少有一边超出塑封料的边缘,封装结构至少有二边设有引脚,散热片上设有锁紧槽,用于增强与塑封料的结合力。散热片直接作为基岛使用,仅基岛部分不覆盖塑封料,至少有一边超出塑封料的边缘,保证具有足够的散热面积,以保证较好散热性能,满足产品的高散热要求;锁紧槽能保持散热片的完整性,还可以增强与塑封料的结合力,散热片和引脚处于不同的平面,布置互不影响,设计自由度更高。

Description

顶部可扩展散热片超高散热封装结构
技术领域
本实用新型涉及半导体封装技术领域,尤其涉及一种顶部可扩展散热片超高散热封装结构。
背景技术
如图1至3所示,为现有技术中的常见的高散热封装结构,包括芯片1、散热片2、引脚3和塑封料4,所述芯片1固定在散热片2上,所述芯片1通过金属丝5与引脚3连接,所述塑封料4将芯片1、引脚3和散热片2塑封,引脚3设置在塑封料4的一面,散热片2 一边超出塑封料4的边缘,所述散热片2上设有通孔21,塑封料4进入通孔21内将散热片 2锁紧。
此种封装结构的散热片同时作为基岛使用,塑封料要将基岛包裹,所以塑封体尺寸较大,塑封料的成分比例较高,由于塑封料的热导率在0.8-1.5W/m.K,整体散热性不高,散热片只有超出塑封料的边缘部分和基岛部分的底面裸露表面起到散热作用,设计的通孔结构,可以增加与塑封料的结合力,但减少了基岛部分与外部散热片的连接的横截面积,降低了散热性,如果不设置通孔,塑封料与基岛之间结合力又不够好,塑封料与基岛之间容易出现分层。另外引脚和散热片不能重叠,设计受限,有待改进。
实用新型内容
本实用新型的目的在于提供一种散热性更好、引脚面更多的顶部可扩展散热片超高散热封装结构。
本实用新型是这样实现的:一种顶部可扩展散热片超高散热封装结构,包括芯片、散热片、引脚和塑封料,所述芯片固定在散热片上,所述芯片通过金属丝与引脚连接,所述塑封料将芯片、引脚和散热片塑封,所述散热片的下表面与塑封料下表面平齐,所述引脚的上表面与塑封料上表面平齐,所述散热片至少有一边超出塑封料的边缘,所述封装结构至少有二边设有引脚,所述散热片上设有锁紧槽,用于增强与塑封料的结合力。
其中,所述锁紧槽为连续的长条状、折线状或弧形状结构。
其中,所述锁紧槽为分段式的长条状、折线状或弧形状结构。
其中,所述锁紧槽由多条短条状锁紧槽单元组合而成。
其中,所述锁紧槽的截面形状为矩形、倒三角形或倒梯形。
其中,所述散热片上被塑封料包裹区域的表面为粗化处理过的表面。
其中,所述引脚被折拗成与塑封料上表面平齐。
其中,所述锁紧槽的深度为100-200μm,宽度为100-1000μm。
本实用新型的有益效果为:本实用新型所述顶部可扩展散热片超高散热封装结构的散热片直接作为基岛使用,仅基岛部分不覆盖塑封料,至少有一边超出塑封料的边缘,保证具有足够的散热面积,以保证较好散热性能,满足产品的高散热要求;本申请在散热片上不设置通孔,不截断散热片,而是设置锁紧槽,锁紧槽能保持散热片的完整性,还可以增强与塑封料的结合力,即使散热片只有一面与塑封料结合,也能有效保证二者之间的结合力满足要求,减少分层的风险,提高产品的可靠性;另外,塑封体尺寸小,只需要比芯片尺寸大一些即可,基岛大,利用率高,塑封料的成分比例低,散热板的成分比例高,散热板金属材料的热导率比塑封料高很多,能够将产品的整体散热性能提高很多。所述散热片的下表面与塑封料下表面平齐,所述引脚的上表面与塑封料上表面平齐,二者处于不同的平面,所以散热片和引脚布置互不影响,设计自由度更高。
附图说明
图1是现有技术中散热封装结构的剖面示意图;
图2是现有技术中散热封装结构的正面示意图;
图3是现有技术中散热封装结构的背面示意图;
图4是本实用新型所述顶部可扩展散热片超高散热封装结构实施例一的正面示意图;
图5是本实用新型所述顶部可扩展散热片超高散热封装结构实施例一的背面示意图;
图6是图4中A-A向剖面图;
图7是所述散热片和引脚的正面示意图;
图8是本实用新型所述顶部可扩展散热片超高散热封装结构实施例二的正面示意图;
图9是本实用新型所述顶部可扩展散热片超高散热封装结构实施例三的正面示意图;
图10是本实用新型所述顶部可扩展散热片超高散热封装结构实施例四的剖面图;
图11是本实用新型所述顶部可扩展散热片超高散热封装结构实施例五的剖面图;
图12是本实用新型所述顶部可扩展散热片超高散热封装结构实施例六的背面示意图;
图13是本实用新型所述顶部可扩展散热片超高散热封装结构实施例七的背面示意图;
图14是本实用新型所述顶部可扩展散热片超高散热封装结构实施例八的背面示意图;
图15是本实用新型所述顶部可扩展散热片超高散热封装结构实施例九的背面示意图;
图16是本实用新型所述顶部可扩展散热片超高散热封装结构实施例十的剖面图。
图2、3、4、5、8、9、12、13、14、15中阴影部分为塑封料。
其中,1、芯片;2、散热片;21、通孔;22、锁紧槽;3、引脚;4、塑封料;5、金属丝。
具体实施方式
为了使本实用新型的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本实用新型进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本实用新型,并不用于限定本实用新型。
作为本实用新型所述顶部可扩展散热片超高散热封装结构的实施例一,如图4至图7所示,包括芯片1、散热片2、引脚3和塑封料4,所述芯片1固定在散热片2上,所述芯片1通过金属丝5与引脚3连接,所述塑封料4将芯片1、引脚3和散热片2塑封,所述散热片 2的下表面与塑封料4下表面平齐,所述引脚3的上表面与塑封料4上表面平齐,所述散热片2至少有一边超出塑封料4的边缘,所述封装结构至少有二边设有引脚3,所述散热片2 上设有锁紧槽22,用于增强与塑封料4的结合力。
本实用新型所述封装结构的散热片2直接作为基岛使用,仅基岛部分不覆盖塑封料4,至少有一边超出塑封料4的边缘,保证具有足够的散热面积,以保证较好散热性能,满足产品的高散热要求;本申请在散热片上不设置通孔,不截断散热片,而是设置锁紧槽22,锁紧槽22能保持散热片2的完整性,还可以增强与塑封料4的结合力,即使散热片2只有一面与塑封料4结合,也能有效保证二者之间的结合力满足要求,减少分层的风险,提高产品的可靠性;另外,塑封体尺寸小,只需要比芯片尺寸大一些即可,基岛大,利用率高,塑封料的成分比例低,散热板的成分比例高,散热板金属材料的热导率比塑封料高很多,能够将产品的整体散热性能提高很多。所述散热片2的下表面与塑封料4下表面平齐,所述引脚3的上表面与塑封料4上表面平齐,二者处于不同的平面,所以散热片2和引脚3布置互不影响,设计自由度更高。
在本实施例中,所述引脚3先塑封再被折拗成与塑封料4上表面平齐。也可以如图16 所示,先把引脚3折拗再进行塑封工艺。
在本实施例中,所述锁紧槽22为连续的折线状结构。当然根据实际需要,也可以设计为连续的长条状或弧形状等结构。(在本实施例中,所述锁紧槽也可以为分段式的长条状、折线状或弧形状结构。)
在本实施例中,如图6所示,所述锁紧槽22的截面形状为矩形,也可以为如图11所示的倒三角形,也可以为倒梯形等其它多种形状;还可以为如图10所示的双锁紧槽结构,有效增加与塑封料4之间的结合力。
在本实施例中,所述锁紧槽22的深度优选值为100-200μm,宽度优选值为100-1000μm。
在本实施例中,所述散热片2整体形状为工字形,当然也可以为如图13所示的不规则形状,以及如图14所示的T字形。可根据不同产品的需求(功能复杂程度),散热片2的形状、厚度、尺寸都可做出不同变化。
作为本实用新型所述顶部可扩展散热片超高散热封装结构的实施例三,如图9所示,与实施例一不同之处在于所述锁紧槽22为分段式的结构,也可以理解为包括多条纵向和/或横向的锁紧槽单元(倾斜设置也可行),即所述锁紧槽由多条短条状锁紧槽单元组合而成,主要依据散热片的形状进行针对性设计,一般数量越多,长度越长,散热片与塑封料之间的结合力就越强。类似的布置方式还有如图8所示的二条短条状锁紧槽单元,由于布置组合的方式众多,此处不再过多举例。分段式结构在加工时对散热片2的应力影响更小。
在本实用新型中,所述散热片上被塑封料包裹区域的表面为粗化处理过的表面,增大与塑封料的接触面积,提高塑封料与散热片的结合力,增强产品的可靠性。
图12中,两边的引脚3数量不同,不对称。图15三边设有引脚3,一面散热片2超出塑封料4的边缘范围。当散热片和引脚在同一个引线框上成型出来时,那么塑封料的一边要么是散热片,要么是引脚,二者只能二选一,或者都不选,无法做到二者都选。
以上所述仅为本实用新型的较佳实施例而已,并不用以限制本实用新型,凡在本实用新型的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本实用新型的保护范围之内。

Claims (8)

1.一种顶部可扩展散热片超高散热封装结构,其特征在于,包括芯片、散热片、引脚和塑封料,所述芯片固定在散热片上,所述芯片通过金属丝与引脚连接,所述塑封料将芯片、引脚和散热片塑封,所述散热片的下表面与塑封料下表面平齐,所述引脚的上表面与塑封料上表面平齐,所述散热片至少有一边超出塑封料的边缘,所述封装结构至少有二边设有引脚,所述散热片上设有锁紧槽,用于增强与塑封料的结合力。
2.根据权利要求1所述的封装结构,其特征在于,所述锁紧槽为连续的长条状、折线状或弧形状结构。
3.根据权利要求1所述的封装结构,其特征在于,所述锁紧槽为分段式的长条状、折线状或弧形状结构。
4.根据权利要求1所述的封装结构,其特征在于,所述锁紧槽由多条短条状锁紧槽单元组合而成。
5.根据权利要求1至4任一项所述的封装结构,其特征在于,所述锁紧槽的截面形状为矩形、倒三角形或倒梯形。
6.根据权利要求1所述的热封装结构,其特征在于,所述散热片上被塑封料包裹区域的表面为粗化处理过的表面。
7.根据权利要求1所述的封装结构,其特征在于,所述引脚被折拗成与塑封料上表面平齐。
8.根据权利要求1所述的封装结构,其特征在于,所述锁紧槽的深度为100-200μm,宽度为100-1000μm。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113088224A (zh) * 2021-02-26 2021-07-09 广东美的白色家电技术创新中心有限公司 应用于封装产品的保护组合物、功率模块及其制备方法
CN114190009A (zh) * 2021-11-19 2022-03-15 气派科技股份有限公司 表面贴装器件封装结构及其上板焊接方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113088224A (zh) * 2021-02-26 2021-07-09 广东美的白色家电技术创新中心有限公司 应用于封装产品的保护组合物、功率模块及其制备方法
CN114190009A (zh) * 2021-11-19 2022-03-15 气派科技股份有限公司 表面贴装器件封装结构及其上板焊接方法

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