CN111244058A - 一种基岛折弯的引线框架结构及电子器件 - Google Patents
一种基岛折弯的引线框架结构及电子器件 Download PDFInfo
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Abstract
本发明涉及半导体封装技术领域,尤其涉及一种基岛折弯的引线框架结构及电子器件,该引线框架结构包括外边框,所述外边框内设有若干结构相同的基本单元,每个基本单元与外边框之间、基本单元与基本单元之间均通过框架连接区连接,每个基本单元包括载片基岛区和引脚区,其特征在于:所述载片基岛区有一平面,所述平面的至少一条侧边的边缘上设有翻折边;本发明所述的基岛折弯的引线框架结构,能够有效控制住芯片与载片基岛区之间的焊接材料,不仅提升了封装技术能力,而且有效缓解了器件吸湿问题,缩短了散热距离,从而延长了器件储存和使用寿命,提高了器件可靠性。
Description
技术领域
本发明涉及半导体封装技术领域,尤其涉及一种基岛折弯的引线框架结构及电子器件。
背景技术
引线框架作为集成电路的芯片载体,是一种借助于金属材料(金铜丝、铝丝、铝带、铜带)实现芯片内部电路引出端与外引脚的电气连接,形成电气回路的关键结构件,它是有引脚封装的载体,绝大部分的半导体集成块中都需要使用引线框架,是电子信息产业中重要的基础材料。
引线框架作为封装过程中最主要的基础材料之一,其又是决定封装技术水平高低和器件可靠性的最重要因素之一,如图1所示,传统的引线框架的载片基岛区A为平面,封装时焊接材料很难控制,散热效果差,不仅限制了封装技术能力,而且产品更容易吸湿,影响了产品的可靠性。
发明内容
针对现有技术中的问题,本发明提供一种基岛折弯的引线框架结构。
为实现以上技术目的,本发明的技术方案是:
一种基岛折弯的引线框架结构,包括外边框,所述外边框内设有若干结构相同的基本单元,每个基本单元与外边框之间、基本单元与基本单元之间均通过框架连接区连接,每个基本单元包括载片基岛区和引脚区,所述载片基岛区有一平面,所述平面的至少一条侧边的边缘上设有翻折边。
作为优选,所述翻折边由基岛正面向基岛背面翻折或者由基岛背面向基岛正面翻折。
作为优选,所述平面左半边的侧边边缘上设有C型翻折边,右半边的侧边边缘上对称设有C型翻折边。
作为优选,当所述平面的至少两条侧边的边缘上设有翻折边时,不同边边缘上的翻折边翻折方向相同或者不同。
作为优选,当所述平面相邻的两条侧边的边缘上设有翻折边时,相邻的翻折边之间存在间隙或者相邻的翻折边相接。
作为优选,当所述平面的四条侧边的边缘上设有翻折边时,四条翻折边相接,形成环形分布。
作为优选,所述翻折边呈断点状。
作为优选,所述翻折边凸出于平面的高度为0-2mm。
一种电子器件结构,包括半导体芯片和引线框架的基本单元,所述半导体芯片通过焊接材料设于基本单元的载片基岛区,所述半导体芯片通过金属材料与基本单元的引脚区连接,所述半导体芯片、引脚区和金属材料由封装树脂全部包裹,其特征在于:所述载片基岛区有一平面,所述平面的至少一条侧边的边缘上设有翻折边,所述载片基岛区由封装树脂部分包裹或者全部包裹。
作为优选,所述翻折边由封装树脂部分包裹或者全部包裹。
从以上描述可以看出,本发明具备以下优点:
本发明所述的基岛折弯的引线框架结构,能够有效控制住芯片与载片基岛区之间的焊接材料,不仅提高了封装技术能力,而且有效缓解了器件吸湿问题,缩短了散热距离,从而延长了器件储存和使用寿命,提高了器件可靠性。
附图说明
图1是传统引线框架的剖面图;
图2是本发明的结构示意图;
图3是图2的局部结构示意图;
图4是图3的局部放大图;
图5是本发明实施例的结构示意图;
图6是本发明实施例的结构示意图;
图7是本发明实施例的结构示意图;
图8是本发明实施例的结构示意图;
图9是本发明的实施例结构示意图;
图10是本发明实施例的结构示意图;
图11是本发明实施例的结构示意图;
图12是本发明实施例的结构示意图;
图13是本发明实施例的结构示意图;
图14是本发明实施例的结构示意图;
图15是本发明实施例的结构示意图。
具体实施方式
结合图2-14,详细说明本发明的具体实施例,但不对本发明的权利要求做任何限定。
如图2,一种基岛折弯的引线框架结构,包括外边框1,外边框1内设有若干结构相同的基本单元3,每个基本单元3与外边框1之间、基本单元3与基本单元3之间均通过框架连接区2连接,每个基本单元3包括载片基岛区31和引脚区32,载片基岛区31有一平面,平面的至少一条侧边边缘上设有翻折边311。
如图3所示,为图2的局部结构示意图;
如图4所示,为图3的局部放大图,图中阴影部分为引线框架的镂空结构,在最终封装后被封装树脂填充;
上述技术方案中(下述内容中涉及的图5-图11中翻折边的示例均以封装后的器件结构示出,图5-图10为器件的剖视图,图11为器件背面示意图):
1.翻折边的翻折角度
翻折边与平面的夹角记为a,a的角度范围为1°~179°,较优的角度为90°±15°。
2.翻折边的方向不定:
每条翻折边311可以由基岛正面向基岛背面翻折(如图5所示),也可以由基岛背面向基岛正面翻折(如图6所示);
当平面上至少两条侧边的边缘上设有翻折边时,不同边边缘上的翻折边翻折方向可以相同,也可以相反(如图7所示)。
3.翻折边的个数不定
可以在平面的任意一条侧边上设置翻折边311,也可以在任意几条侧边上设置翻折边311(如图8-图11所示)。
4.翻折边的形状不定
翻折边311可以呈长条形(如图8-图9所示),也可以呈断点状(如图9所示),也可以呈C型(如图10所示):平面左半边的侧边边缘上设有C型翻折边311,右半边的侧边边缘上对称设有C型翻折边311,当然也可以采用其他形状,并不限于图8-10中给出的方式。
5.翻折边之间的连接方式不定
当平面相邻的两条侧边的边缘上设有翻折边311时,相邻的翻折边311之间可以存在间隙或者也可以相接。例如,当平面的四条侧边的边缘上都设有翻折边311时,四条翻折边311相接即形成环形分布(如图11所示),也可以四条翻折边均不相接(即存在间隙)或者部分相接。
6.翻折边的高度可调
翻折边凸出于平面的高度可以在0-2mm之间,根据器件结构和器件工艺相应设置。
上述实施例中的翻折边可以在现有基岛加工工艺基础上,通过冲切工艺或者蚀刻实现。
在上述一种基岛折弯的引线框架结构的基础上,设计一种电子器件结构。
如图12-14所示(图12以SOT23封装形式举例,图13和图14为内部结构示意图),一种电子器件,包括半导体芯片4和引线框架的基本单元3,半导体芯片4通过焊接材料5设于基本单元3的载片基岛区31,半导体芯片4通过金属材料6与基本单元3的引脚区32连接,半导体芯片4、引脚区32和金属材料6由封装树脂全部包裹,载片基岛区31有一平面,平面的至少一条侧边边缘上设有翻折边311,载片基岛区31由封装树脂部分包裹或者全部包裹。
上述技术方案中:
1.金属材料根据应用场合需求可以选择金属引线、铝带或者铜片,图13-图14中示出的实施例中采用的金属引线的方式。
2.载片基岛区由封装树脂部分包裹或者全部包裹,当采用部分包裹方式时,一般情况下是载片基岛区的背面区域裸露,如图15所示,为器件的背面结构示意图。
3.翻折边根据载片基岛区的结构选择翻折方向和封装树脂的包裹方式:
(1)当载片基岛区由封装树脂全部包裹时,若翻折边由载片基岛区的正面向背面翻折,则翻折边由封装树脂部分包裹(如图11所示,翻折边部分从器件背面露出)或者全部包裹(如图5、图7所示),若翻折边由载片基岛区的背面向正面翻折,则翻折边由封装树脂全部包裹(如图6、图7所示);
(2)当载片基岛区采用部分包裹方式(即载片基岛区的背面区域裸露,如图15所示)时,翻折边只能由载片基岛区的背面向正面翻折,且由封装树脂全部包裹。
4.翻折边的翻折角度、个数、形状、连接方式、高度等设计可以参考前述的基岛折弯的引线框架结构的设计方式,且不限于附图中给出的具体设计方式。
需要特别说明的是,上述实施例中,图2-10、图12-14以SOT23封装形式示例,图11以SOP8封装形式示例,本发明实际应用时并不限于上述封装形式,可以在任何封装形式中应用。
本发明所述的基岛折弯的引线框架结构具有以下优点:
1.由于电子器件的制造方法中存在如下步骤:首先在所述引线框架中的每个基本单元的载片基岛区上涂布液态的银胶(即焊接材料),再将芯片粘贴放置在上述涂布好银胶的载片基岛区上面,因为银胶为液态的,当芯片放置上去的时候有一定的压力,容易挤压使银胶溢出载片基岛区,为了防止银胶溢出载片基岛区,一般设计规范芯片边缘距离载片基岛区至少大于100um,当使用本发明所述的基岛折弯的引线框架结构时,翻折边起到围挡功能,能锁住银胶,阻止银胶溢出,芯片边缘到载片基岛区的距离最小可为0,因而提升了封装密度;
2.由于电子器件在存储或者使用时,容易受到环境影响,当器件采用传统的载片基岛区为完全平面的引线框架时,若环境潮湿,则湿气更容易透过封装树脂或者从引脚和封装树脂的缝隙侵入器件内部,使电子器件产生吸湿现象,继而在后续SMT工艺加热过程中,受热后形成水蒸气,进而产生压力导致材料或材料间出现裂纹,并致使器件内部金属氧化,最终导致器件失效,同时吸湿现象也会引起器件分层,同样会导致器件失效。本发明所述基岛折弯的引线框架结构,在载片基岛区设置有折弯结构(即翻折边),使湿气侵入器件内部的路线受阻,使得器件不易产生吸湿现象,提高了产品可靠性,延长了器件的储存和使用寿命;
3.对于功率MOS管器件而言,工作时发热量较大,如果MOS管的散热效果差,导致温度过高,引起器件烧毁,进而可能导致整个电路板的损毁甚至火灾事故,以SOT-23封装形式的MOS管为例,主要的发热区域是载有芯片的载片基岛区;当器件采用传统的载片基岛区为完全平面的引线框架时,其载片基岛区被封装树脂完全包裹,传热路径长,散热效果差,当使用本发明所述的基岛折弯的引线框架结构时,载片基岛区折弯部分(即翻折边)到塑封外壳的距离短,或者翻折边的部分露出于封装树脂外,并且由于翻折边为金属材料能够迅速导热、散热,从而提高了器件的可靠性和使用寿命。
综上所述,本发明具有以下优点:
本发明所述的基岛折弯的引线框架结构,能够有效锁住芯片与载片基岛区之间的银胶,不仅提高了封装技术能力,而且有效缓解了器件吸湿问题,缩短了散热距离,从而延长了器件储存和使用寿命,提高了器件可靠性。
可以理解的是,以上关于本发明的具体描述,仅用于说明本发明而并非受限于本发明实施例所描述的技术方案。本领域的普通技术人员应当理解,仍然可以对本发明进行修改或等同替换,以达到相同的技术效果;只要满足使用需要,都在本发明的保护范围之内。
Claims (10)
1.一种基岛折弯的引线框架结构,包括外边框,所述外边框内设有若干结构相同的基本单元,每个基本单元与外边框之间、基本单元与基本单元之间均通过框架连接区连接,每个基本单元包括载片基岛区和引脚区,其特征在于:所述载片基岛区有一平面,所述平面的至少一条侧边的边缘上设有翻折边。
2.根据权利要求1所述的一种基岛折弯的引线框架结构,其特征在于:所述翻折边由基岛正面向基岛背面翻折或者由基岛背面向基岛正面翻折。
3.根据权利要求1所述的一种基岛折弯的引线框架结构,其特征在于:所述平面左半边的侧边边缘上设有C型翻折边,右半边的侧边边缘上对称设有C型翻折边。
4.根据权利要求1所述的一种基岛折弯的引线框架结构,其特征在于:当所述平面的至少两条侧边的边缘上设有翻折边时,不同边边缘上的翻折边翻折方向相同或者不同。
5.根据权利要求1所述的一种基岛折弯的引线框架结构,其特征在于:当所述平面相邻的两条侧边的边缘上设有翻折边时,相邻的翻折边之间存在间隙或者相邻的翻折边相接。
6.根据权利要求1所述的一种基岛折弯的引线框架结构,其特征在于:当所述平面的四条侧边的边缘上设有翻折边时,四条翻折边相接,形成环形分布。
7.根据权利要求1所述的一种基岛折弯的引线框架结构,其特征在于:所述翻折边呈断点状。
8.根据权利要求1所述的一种基岛折弯的引线框架结构,其特征在于:所述翻折边凸出于平面的高度为0-2mm。
9.一种电子器件结构,包括半导体芯片和引线框架的基本单元,所述半导体芯片通过焊接材料设于基本单元的载片基岛区,所述半导体芯片通过金属材料与基本单元的引脚区连接,所述半导体芯片、引脚区和金属材料由封装树脂全部包裹,其特征在于:所述载片基岛区有一平面,所述平面的至少一条侧边的边缘上设有翻折边,所述载片基岛区由封装树脂部分包裹或者全部包裹。
10.根据权利要求9所述的电子器件,其特征在于:所述翻折边由封装树脂部分包裹或者全部包裹。
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