CN209266411U - 一种高性能晶体管 - Google Patents
一种高性能晶体管 Download PDFInfo
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- CN209266411U CN209266411U CN201821731887.1U CN201821731887U CN209266411U CN 209266411 U CN209266411 U CN 209266411U CN 201821731887 U CN201821731887 U CN 201821731887U CN 209266411 U CN209266411 U CN 209266411U
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- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 13
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000007792 gaseous phase Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000026267 regulation of growth Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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CN201821731887.1U CN209266411U (zh) | 2018-10-24 | 2018-10-24 | 一种高性能晶体管 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109273526A (zh) * | 2018-10-24 | 2019-01-25 | 深圳市华讯方舟微电子科技有限公司 | 一种高性能晶体管及其制造方法 |
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- 2018-10-24 CN CN201821731887.1U patent/CN209266411U/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109273526A (zh) * | 2018-10-24 | 2019-01-25 | 深圳市华讯方舟微电子科技有限公司 | 一种高性能晶体管及其制造方法 |
CN109273526B (zh) * | 2018-10-24 | 2024-06-14 | 江西华讯方舟智能技术有限公司 | 一种高性能晶体管及其制造方法 |
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Effective date of registration: 20231128 Address after: Building 7-6, Industrial Control Cloud Creation Port, No. 58 Hongtu Avenue, Honggutan District, Nanchang City, Jiangxi Province, 330000 Patentee after: Jiangxi Huaxun Fangzhou Intelligent Technology Co.,Ltd. Address before: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Patentee before: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd. |
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