CN109273526A - 一种高性能晶体管及其制造方法 - Google Patents
一种高性能晶体管及其制造方法 Download PDFInfo
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- CN109273526A CN109273526A CN201811242989.1A CN201811242989A CN109273526A CN 109273526 A CN109273526 A CN 109273526A CN 201811242989 A CN201811242989 A CN 201811242989A CN 109273526 A CN109273526 A CN 109273526A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 239000007792 gaseous phase Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- 230000026267 regulation of growth Effects 0.000 claims description 10
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 12
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811242989.1A CN109273526B (zh) | 2018-10-24 | 2018-10-24 | 一种高性能晶体管及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811242989.1A CN109273526B (zh) | 2018-10-24 | 2018-10-24 | 一种高性能晶体管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109273526A true CN109273526A (zh) | 2019-01-25 |
CN109273526B CN109273526B (zh) | 2024-06-14 |
Family
ID=65193308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811242989.1A Active CN109273526B (zh) | 2018-10-24 | 2018-10-24 | 一种高性能晶体管及其制造方法 |
Country Status (1)
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CN (1) | CN109273526B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060284167A1 (en) * | 2005-06-17 | 2006-12-21 | Godfrey Augustine | Multilayered substrate obtained via wafer bonding for power applications |
CN1985368A (zh) * | 2004-06-03 | 2007-06-20 | S.O.I.探测硅绝缘技术公司 | 混合外延支撑件及其制作方法 |
CN103779193A (zh) * | 2014-01-27 | 2014-05-07 | 苏州能讯高能半导体有限公司 | 基于金刚石衬底的氮化物半导体器件及其制备方法 |
CN106415846A (zh) * | 2014-06-13 | 2017-02-15 | 英特尔公司 | 通过层转移在反向极化衬底上的高电子迁移率晶体管制造工艺 |
US20180005815A1 (en) * | 2014-12-22 | 2018-01-04 | Michael R. Seacrist | Manufacture of group iiia-nitride layers on semiconductor on insulator structures |
CN209266411U (zh) * | 2018-10-24 | 2019-08-16 | 深圳市华讯方舟微电子科技有限公司 | 一种高性能晶体管 |
-
2018
- 2018-10-24 CN CN201811242989.1A patent/CN109273526B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1985368A (zh) * | 2004-06-03 | 2007-06-20 | S.O.I.探测硅绝缘技术公司 | 混合外延支撑件及其制作方法 |
US20060284167A1 (en) * | 2005-06-17 | 2006-12-21 | Godfrey Augustine | Multilayered substrate obtained via wafer bonding for power applications |
CN103779193A (zh) * | 2014-01-27 | 2014-05-07 | 苏州能讯高能半导体有限公司 | 基于金刚石衬底的氮化物半导体器件及其制备方法 |
CN106415846A (zh) * | 2014-06-13 | 2017-02-15 | 英特尔公司 | 通过层转移在反向极化衬底上的高电子迁移率晶体管制造工艺 |
US20180005815A1 (en) * | 2014-12-22 | 2018-01-04 | Michael R. Seacrist | Manufacture of group iiia-nitride layers on semiconductor on insulator structures |
CN209266411U (zh) * | 2018-10-24 | 2019-08-16 | 深圳市华讯方舟微电子科技有限公司 | 一种高性能晶体管 |
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Publication number | Publication date |
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CN109273526B (zh) | 2024-06-14 |
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Effective date of registration: 20230721 Address after: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Applicant after: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd. Address before: 518102 East, 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20231130 Address after: Building 7-6, Industrial Control Cloud Creation Port, No. 58 Hongtu Avenue, Honggutan District, Nanchang City, Jiangxi Province, 330000 Applicant after: Jiangxi Huaxun Fangzhou Intelligent Technology Co.,Ltd. Address before: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province Applicant before: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd. |
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