CN208284470U - A kind of power transistor frame structure - Google Patents

A kind of power transistor frame structure Download PDF

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Publication number
CN208284470U
CN208284470U CN201820190035.XU CN201820190035U CN208284470U CN 208284470 U CN208284470 U CN 208284470U CN 201820190035 U CN201820190035 U CN 201820190035U CN 208284470 U CN208284470 U CN 208284470U
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China
Prior art keywords
pin
power transistor
mounting base
frame structure
connecting plate
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Application number
CN201820190035.XU
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Chinese (zh)
Inventor
黄峰荣
杨斌
何秋生
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Foshan Core Semiconductor Co Ltd
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Foshan Core Semiconductor Co Ltd
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Priority to CN201820190035.XU priority Critical patent/CN208284470U/en
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Abstract

The utility model discloses a kind of power transistor frame structure comprising mounting base is used for installation power transistor chip, and mounting base has groove;Heat sink connects mounting base;And pin components, mounting base is connected by bending part.The power transistor frame structure of the utility model solves the problems, such as that the biggish power transistor of volume is not easily mounted on power requirement height and the circuit of small volume;In addition, increasing heat sink solves the problems, such as that the biggish power transistor heat dissipation effect of power is poor, can be widely applied in rapid nitriding field.

Description

A kind of power transistor frame structure
Technical field
The utility model relates to power transistor technology fields, and in particular, to a kind of power transistor frame structure.
Background technique
Power transistor is a kind of semiconductor devices for controlling electric current, and small-signal can be zoomed into width by power transistor The biggish electric signal of angle value has Current amplifier effect, is the core element of electronic circuit.Currently, quick charge on the market Technology is usually all to be realized by power transistor, and the biggish power crystal of power must be selected by realizing quick charge just Pipe, but the volume of the biggish power transistor of power is also corresponding larger, bulky power transistor is not easy to be mounted on fast In fast charging circuit, and it is unable to satisfy cooling requirements.
Utility model content
In view of the deficiencies of the prior art, the utility model discloses a kind of power transistor frame structure comprising:
Mounting base, is used for installation power transistor chip, and mounting base has groove;
Heat sink connects mounting base;And
Pin components connect mounting base by bending part.
An embodiment according to the present utility model, above-mentioned pin components include that the first pin, second pin and third are drawn Foot, the first pin connect second pin with third pin, and second pin connects mounting base.
An embodiment according to the present utility model, above-mentioned bottom connecting plate are located at the side of mounting base, and connect the One pin, second pin and third pin.
An embodiment according to the present utility model, upper middle part connecting plate between mounting base and bottom connecting plate, And connect the first pin, second pin and third pin.
An embodiment according to the present utility model, above-mentioned bottom connecting plate have multiple through-holes, and multiple through-holes are right respectively Answer second pin.
The utility model has the following beneficial effects: to solve volume biggish for the power transistor frame structure of the utility model Power transistor is not easy the problem of encapsulating, securely and reliably;It is dissipated in addition, increasing heat sink and solving the biggish power transistor of power The problem of thermal effect difference, can be widely applied in rapid nitriding field.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of power transistor frame structure in the utility model embodiment;
Fig. 2 is the structural schematic diagram of one section of power transistor frame structure in the utility model embodiment.
Description of symbols:
1, mounting base;11, groove;2, heat sink;3, pin components;31, the first pin;32, second pin;33, Three pins;4, bending part;5, bottom connecting plate;51, multiple through-holes;6, middle part connecting plate.
Specific embodiment
Multiple embodiments that the utility model will be disclosed with schema below, as clearly stated, in many practices Details will be explained in the following description.It should be appreciated, however, that the details in these practices does not apply this with limitation practical new Type.That is, the details in these practices is non-essential in some embodiments of the utility model.In addition, for letter For the sake of changing schema, some known usual structures and component will be painted it in the drawings in simply illustrative mode.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute in the utility model embodiment It is only used for explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, such as When the fruit particular pose changes, then directionality instruction also correspondingly changes correspondingly.
In addition, the description for being such as related to " first ", " second " in the present invention is used for description purposes only, and non-specifically The meaning of order or cis-position is censured, it is also non-to limit the utility model, it is retouched just for the sake of difference with same technique term The component stated or operation are not understood to indicate or imply its relative importance or implicitly indicate indicated technology The quantity of feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy Sign.It in addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution Conjunction is not present, also not within the protection scope of the requires of the utility model.
For the contents, features and effects that can further appreciate that the utility model, the following examples are hereby given, and cooperates attached drawing Detailed description are as follows:
Fig. 1 is please referred to, is the structural schematic diagram of power transistor frame structure in the utility model embodiment.As schemed Show, power transistor frame includes: mounting base 1, heat sink 2 and pin components 3.Mounting base 1 is used for installation power transistor Chip, mounting base 1 have groove 11, and groove 11 is conducive to envelope material and is packaged to power transistor chip, and is not easy after encapsulating Layering.Heat sink 2 connects mounting base 1, and the heat that power transistor generates in use process is scattered and disappeared by heat sink 2, prevented The excessively high damage power transistor of its temperature.Pin components 3 connect mounting base 1 by bending part 4, and pin components 3 use and SMT The mode of fitting connects power transistor chip, so that contact area when encapsulation becomes larger, encapsulation is tight, safe.
Further, pin components 3 include the first pin 31, second pin 32 and third pin 33.First pin 31 with Third pin 33 connects second pin 32, and second pin connects mounting base 1.When concrete application, the first pin 31 is electrically connected function The base area of rate transistor chip, second pin 32 are electrically connected the collecting zone of power transistor chip, and third pin 33 is electrically connected function The emitter region of rate transistor chip.
Preferably, power transistor frame structure further includes bottom connecting plate 5.Bottom connecting plate 5 is located at mounting base 1 Side, bottom connecting plate 5 connect the first pin 31, second pin 32 and third pin 33.Bottom connecting plate 5 draws multiple first Foot 31, second pin 32 and third pin 33 connect, and are conducive to the following process of power transistor frame structure, convenient fast It is prompt.
Preferably, power transistor frame structure further includes middle part connecting plate 6.Middle part connecting plate 6 be located at mounting base 1 with Between bottom connecting plate 5, middle part connecting plate 6 connects the first pin 31, second pin 32 and third pin 33.It is connected using middle part Plate 6, which connects the first pin 31, second pin 32 and third pin 33, can effectively improve the whole strong of power transistor frame structure Degree, prevents its deformation.
Further, bottom connecting plate 5 has multiple through-holes 51, and multiple through-holes 51 respectively correspond second pin 32.It is multiple Through-hole 51 can effectively reduce one section of power transistor frame structure cut into after processing is completed it is required when single power transistor Power is cut, cuts that power is excessive to cause power transistor frame structure to deform during preventing from cutting.
The utility model has the following beneficial effects: to solve volume biggish for the power transistor frame structure of the utility model Power transistor is not easy the problem of encapsulating, securely and reliably;It is dissipated in addition, increasing heat sink and solving the biggish power transistor of power The problem of thermal effect difference, can be widely applied in rapid nitriding field.
Upper described only the embodiments of the present invention, is not intended to limit the utility model.For this field For technical staff, various modifications and changes may be made to the present invention.The interior institute of all spirit and principle in the utility model Any modification, equivalent substitution, improvement and etc. of work should all include within the scope of the claims of the utility model.

Claims (5)

1. a kind of power transistor frame structure characterized by comprising
Mounting base (1), is used for installation power transistor chip, and the mounting base (1) has groove (11);
Heat sink (2) connects the mounting base (1);And
Pin components (3) connect the mounting base (1) by bending part (4).
2. power transistor frame structure according to claim 1, which is characterized in that the pin components (3) include the One pin (31), second pin (32) and third pin (33), described in first pin (31) connect with third pin (33) Second pin (32), the second pin connect the mounting base (1).
3. power transistor frame structure according to claim 2, which is characterized in that further include bottom connecting plate (5), institute The side that bottom connecting plate (5) are located at the mounting base (1) is stated, and connects first pin (31), second pin (32) And third pin (33).
4. power transistor frame structure according to claim 3, which is characterized in that further include middle part connecting plate (6), institute Middle part connecting plate (6) are stated between the mounting base (1) and bottom connecting plate (5), and connect first pin (31), Second pin (32) and third pin (33).
5. power transistor frame structure according to claim 3, which is characterized in that the bottom connecting plate (5) has Multiple through-holes (51), the multiple through-hole (51) respectively correspond the second pin (32).
CN201820190035.XU 2018-02-05 2018-02-05 A kind of power transistor frame structure Active CN208284470U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201820190035.XU CN208284470U (en) 2018-02-05 2018-02-05 A kind of power transistor frame structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201820190035.XU CN208284470U (en) 2018-02-05 2018-02-05 A kind of power transistor frame structure

Publications (1)

Publication Number Publication Date
CN208284470U true CN208284470U (en) 2018-12-25

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CN201820190035.XU Active CN208284470U (en) 2018-02-05 2018-02-05 A kind of power transistor frame structure

Country Status (1)

Country Link
CN (1) CN208284470U (en)

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