CN207800602U - A kind of power transistor lead frame that air-tightness is good - Google Patents
A kind of power transistor lead frame that air-tightness is good Download PDFInfo
- Publication number
- CN207800602U CN207800602U CN201820194608.6U CN201820194608U CN207800602U CN 207800602 U CN207800602 U CN 207800602U CN 201820194608 U CN201820194608 U CN 201820194608U CN 207800602 U CN207800602 U CN 207800602U
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- Prior art keywords
- power transistor
- pin
- mounting plate
- air
- hole
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Abstract
The utility model discloses a kind of power transistor lead frame that air-tightness is good comprising mounting plate；There is through-hole, through-hole both ends to sink respectively reaming for power transistor chip mounting plate, connection plate, power transistor chip mounting plate；Power transistor chip, is set to power transistor chip mounting plate, and power transistor chip is located at the side of through-hole；Pin, connects power transistor chip mounting plate, and pin is electrically connected power transistor chip.It is I-shaped through-hole that cross section, which is arranged, in the good power transistor lead frame of the air-tightness of the utility model on power transistor chip mounting plate, it is effectively increased the air-tightness of epoxy-plastic packaging material encapsulation power transistor, the structure of power transistor is set more to stablize, meanwhile performance of the power transistor on meeting with stresses also being enabled to increase considerably.
Description
Technical field
The utility model is related to power transistor technology fields, and in particular, to a kind of power transistor that air-tightness is good
Lead frame.
Background technology
Power transistor is a kind of semiconductor devices of control electric current, and small-signal can be zoomed into width by power transistor
The larger electric signal of angle value has Current amplifier effect, is the core element of electronic circuit.Currently, existing power transistor
Mainly encapsulated using epoxy molding plastic, but since there are higher hygroscopicity for plastic packaging material, and device is in production and test process
In, inevitably to pass through high temperature and high humidity environment, internal stress can be caused excessive after moisture expansion, form layering, gold thread
The consequences such as fracture, and due to the difference of the other materials coefficient of expansion such as plastic packaging material and Si, Cu, be also easy in larger shearing
Layering is formed under stress, it is insufficient so as to cause the air-tightness of insulator, and then water or acid ＆ alkali liquid is caused to enter, cause power brilliant
There is the phenomenon that electrical property failure or there is failure hidden danger in body pipe, dangerous.
Utility model content
In view of the deficiencies of the prior art, the utility model discloses a kind of power transistor lead frame that air-tightness is good,
Including：
Mounting plate；
Power transistor chip mounting plate, connection plate, power transistor chip mounting plate have through-hole, through-hole two
Hold reaming of sinking respectively；
Power transistor chip, is set to power transistor chip mounting plate, and power transistor chip is located at through-hole
Side；
Pin, connects power transistor chip mounting plate, and pin is electrically connected power transistor chip.
An embodiment according to the present utility model, above-mentioned mounting plate have mounting hole.
An embodiment according to the present utility model, above-mentioned mounting hole are convex shape.
An embodiment according to the present utility model, above-mentioned through-hole cross section are I-shaped.
An embodiment according to the present utility model, model MOSFET, SCR of above-mentioned power transistor chip, FRD,
SBD or BJT.
An embodiment according to the present utility model, above-mentioned pin include the first pin, second pin and third pin, the
One pin connect second pin with third pin by connecting plate.
The beneficial effects of the utility model are：The good power transistor lead frame of the air-tightness of the utility model is in power
It is I-shaped through-hole that cross section is arranged on transistor chip mounting plate, is effectively increased epoxy-plastic packaging material encapsulation power transistor
Air-tightness makes the structure of power transistor more stablize, meanwhile, also enable performance of the power transistor on meeting with stresses significantly
Increase.
Description of the drawings
Attached drawing described herein is used for providing further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please do not constitute the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 is the structural schematic diagram of the good power transistor lead frame of air-tightness in the utility model embodiment；
Fig. 2 is the sectional view of through-hole in the utility model embodiment.
Reference sign：
1, mounting plate；11, mounting hole；2, power transistor chip mounting plate；21, through-hole；3, power transistor chip；4、
Pin；41, the first pin；42, second pin；43, third pin；44, connecting plate.
Specific implementation mode
Multiple embodiments that the utility model will be disclosed with schema below, as clearly stated, in many practices
Details will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit this practicality newly
Type.That is, in some embodiments of the utility model, the details in these practices is non-essential.In addition, for letter
For the sake of changing schema, some known usual structures will be painted it in a manner of simply illustrative in the drawings with component.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute in the utility model embodiment
It is only used for explaining relative position relation, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, such as
When the fruit particular pose changes, then directionality instruction also correspondingly changes correspondingly.
In addition, the description for being such as related to " first ", " second " in the present invention is used for description purposes only, and non-specifically
The meaning of order or cis-position is censured, it is also non-to limit the utility model, it is retouched with same technique term just for the sake of difference
The component stated or operation are not understood to indicate or imply its relative importance or implicitly indicate indicated technology
The quantity of feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.In addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, when the knot that conflicting or cannot achieve when will be understood that this technical solution occurs in the combination of technical solution
Conjunction is not present, also not within the protection domain of the requires of the utility model.
For that can further appreciate that the contents, features and effects of the utility model, the following examples are hereby given, and coordinates attached drawing
Detailed description are as follows：
Fig. 1 is please referred to, the structure for the good power transistor lead frame of air-tightness in the utility model embodiment is shown
It is intended to.As shown, the good power transistor lead frame of the air-tightness of the utility model includes：Mounting plate 1, power transistor
Chip mounting board 2, power transistor chip 3 and pin 4.Mounting plate 1 has convex shape mounting hole 11, and worker is passed through using bolt
Power transistor is installed to precalculated position by mounting hole 21.2 connection plate 1 of power transistor chip mounting plate, power crystal
There is tube chip mounting plate 2 through-hole 21,21 both ends of through-hole to sink respectively reaming, and through-hole 21 is effectively increased power transistor chip peace
The adsorptivity of loading board 2 and epoxy molding plastic envelope material, improves the air-tightness of encapsulation.Power transistor chip 3 is set to power crystal
Tube chip mounting plate 2, power transistor chip 3 are located at the side of through-hole 21, and power transistor chip 3 is for controlling power crystal
The normal work of pipe.Pin 4 connects power transistor chip mounting plate 2, and pin 4 is electrically connected power transistor chip 3.
Preferably, mounting hole 11 is convex shape.Mounting hole 11 is designed as convex shape, increases the contact surface of itself and envelope material
Product, encapsulation are more secured.
It is the sectional view of through-hole in the utility model embodiment further and with reference to Fig. 2.As shown, through-hole 21 is transversal
Face is I-shaped.21 cross section of through-hole be designed as it is I-shaped, be effectively increased epoxy-plastic packaging material encapsulation power transistor air-tightness,
So that the structure of power transistor is more stablized, is not easy to be layered.
Preferably, model IRFP150, I RFP140 or the I RFP260 of power transistor chip 3.IRFP150、I
RFP140 or IRFP260 heat dissipation performances are good, are conducive to encapsulation.
Further, pin 4 includes the first pin 41, second pin 42 and third pin 43.First pin 41 and third
Pin 43 connects second pin 42 by connecting plate 44, and the first pin 41 is electrically connected the base area of power transistor chip 3, and second draws
Foot 42 is electrically connected the collecting zone of power transistor chip 3, and third pin 43 is electrically connected the emitter region of power transistor chip 3.It adopts
The entirety of power crystal tube frame can be effectively improved by connecting the first pin 41, second pin 42 and third pin 43 with connecting plate 44
Intensity prevents its deformation.
The good power transistor lead frame of the air-tightness of the utility model is arranged on power transistor chip mounting plate
Cross section is I-shaped through-hole, is effectively increased the air-tightness of epoxy-plastic packaging material encapsulation power transistor, makes power transistor
Structure is more stablized, meanwhile, also enable performance of the power transistor on meeting with stresses increase considerably.
The embodiment of upper described only the utility model, is not intended to limit the utility model.For this field
For technical staff, various modifications and changes may be made to the present invention.The interior institute of all spirit and principle in the utility model
Any modification, equivalent substitution, improvement and etc. of work should all be included within the right of the utility model.
Claims (6)
1. a kind of good power transistor lead frame of air-tightness, which is characterized in that including：
Mounting plate (1)；
Power transistor chip mounting plate (2) connects the mounting plate (1), power transistor chip mounting plate (2) tool
There is a through-hole (21), through-hole (21) both ends sink reaming respectively；
Power transistor chip (3) is set to the power transistor chip mounting plate (2), the power transistor chip
(3) it is located at the side of the through-hole (21)；
Pin (4), connects the power transistor chip mounting plate (2), and the pin (4) is electrically connected the power transistor
Chip (3).
2. the good power transistor lead frame of air-tightness according to claim 1, which is characterized in that the mounting plate
(1) there is mounting hole (11).
3. the good power transistor lead frame of air-tightness according to claim 2, which is characterized in that the mounting hole
(11) it is convex shape.
4. the good power transistor lead frame of air-tightness according to claim 1, which is characterized in that the through-hole (21)
Cross section is I-shaped.
5. the good power transistor lead frame of air-tightness according to claim 1, which is characterized in that the power crystal
Model MOSFET, SCR, FRD, SBD or BJT of tube chip (3).
6. the good power transistor lead frame of air-tightness according to claim 1, which is characterized in that the pin (4)
Including the first pin (41), second pin (42) and third pin (43), first pin (41) is logical with third pin (43)
It crosses connecting plate (44) and connects the second pin (42).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820194608.6U CN207800602U (en) | 2018-02-05 | 2018-02-05 | A kind of power transistor lead frame that air-tightness is good |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820194608.6U CN207800602U (en) | 2018-02-05 | 2018-02-05 | A kind of power transistor lead frame that air-tightness is good |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207800602U true CN207800602U (en) | 2018-08-31 |
Family
ID=63268197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820194608.6U Expired - Fee Related CN207800602U (en) | 2018-02-05 | 2018-02-05 | A kind of power transistor lead frame that air-tightness is good |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207800602U (en) |
-
2018
- 2018-02-05 CN CN201820194608.6U patent/CN207800602U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190505 Address after: 629000 No. 2 Suharitao Science and Technology Park, 73 Chunxiao Road, East of Rose Avenue, Chuanshan Logistics Port, Suining City, Sichuan Province Patentee after: Suining Hexin Semiconductor Co.,Ltd. Address before: 528300 First Floor, 21 Tieyun Road, Junggui Guizhou Residential Committee, Shunde District, Foshan City, Guangdong Province Patentee before: FOSHAN HEXIN SEMICONDUCTOR CO.,LTD. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180831 Termination date: 20220205 |