CN211062705U - Flat packaged high-power bipolar transistor - Google Patents
Flat packaged high-power bipolar transistor Download PDFInfo
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- CN211062705U CN211062705U CN202020212096.9U CN202020212096U CN211062705U CN 211062705 U CN211062705 U CN 211062705U CN 202020212096 U CN202020212096 U CN 202020212096U CN 211062705 U CN211062705 U CN 211062705U
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- plastic package
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Abstract
The utility model discloses a high-power bipolar transistor of flat encapsulation, it includes the plastic-sealed body, sets up in a plurality of pins of plastic-sealed body both sides. Each pin is provided with a pad part inserted in the plastic package body and a welding part led out from the plastic package body, the thickness of the pad part is larger than that of the welding part, and the lower surface of the welding part protrudes out of the lower surface of the plastic package body. The technical scheme of the utility model through the weld part with the pin of triode and pad portion set up to different thickness to this makes to form the effect similar to bending between the weld part of pin and the pad portion, thereby need not to bend the pin and can raise the plastic-sealed body, makes the triode plastic-sealed body can keep certain interval with the PCB board when pasting the dress, makes the pin ground bottom of triode can paste the dress well on the PCB board ground pad position.
Description
Technical Field
The utility model relates to a semiconductor device's technical field, in particular to high-power bipolar transistor of flat encapsulation.
Background
The triode is a semiconductor device for controlling current, is used for amplifying a weak signal into an electric signal with a large amplitude value, and is also used as a contactless switch. The transistor is one of semiconductor basic components, has the function of current amplification, and is a core element of an electronic circuit.
The bigger the rated power of the triode design is, the bigger the volume of the triode is, and the triode has various packaging forms due to the continuous updating and development of the packaging technology. Currently, plastic packages are the mainstream packaging form of the triode, and the package in the form of "TO" and "SOT" is the most common. The TO package is a direct-insert package, the SOT package is a surface-mount package, and with the development of the technology, at present, PCB boards of a mainboard, a display card and the like adopt fewer direct-insert package modes, and more surface-mount package modes are selected. Compared with the TO packaging, the SOT packaging has smaller volume and saves space, and manual plug-in components can be omitted.
Pins of the conventional transistor packaged by the SOT generally need to be bent, however, for some thin transistors, the bending space is limited, the welding part of the bent pins needs to be ensured to protrude out of the small surface of the plastic package body, and the pins of the conventional transistor can be effectively welded to the corresponding pad positions of the PCB.
SUMMERY OF THE UTILITY MODEL
The main object of the present invention is to provide a flat-type packaged high-power bipolar transistor, which has thinner thickness, and the pins are not required to be bent, so that the process is simpler.
In order to achieve the above object, the present invention provides a flat-type packaged high power bipolar transistor, which includes a plastic package body and a plurality of pins disposed on two sides of the plastic package body. Each pin is provided with a pad part inserted in the plastic package body and a welding part led out from the plastic package body, the thickness of the pad part is larger than that of the welding part, and the lower surface of the welding part protrudes out of the lower surface of the plastic package body.
Optionally, the pad portion and the welding portion are welded together by electron beam welding.
Optionally, an upper surface of the pad portion and an upper surface of the soldering portion are located on the same plane.
Optionally, the pins include a first pin, a second pin, and a third pin, a die is disposed on the pad portion of the third pin, and the pad portion of the first pin and the pad portion of the second pin are connected to the die through a wire.
The technical scheme of the utility model through the weld part with the pin of triode and pad portion set up to different thickness to this makes to form the effect similar to bending between the weld part of pin and the pad portion, thereby need not to bend the pin and can raise the plastic-sealed body, makes the triode plastic-sealed body can keep certain interval with the PCB board when pasting the dress, makes the pin ground bottom of triode can paste the dress well on the PCB board ground pad position.
Compared with the prior art, the beneficial effects of the utility model reside in that: the method has the advantages of no need of bending the pins, simple process, low manufacturing cost and suitability for producing ultrathin flat triodes.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an internal connection according to an embodiment of the present invention;
fig. 3 is a side view of an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described in detail below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1-3 of the specification, an embodiment of the present invention provides a flat-type packaged high-power bipolar transistor, which includes a plastic package body 100 and a plurality of pins disposed on two sides of the plastic package body 100. Each pin is provided with a pad part inserted in the plastic package body 100 and a welding part led out from the plastic package body 100, the thickness of the pad part is larger than that of the welding part, and the lower surface of the welding part protrudes out of the lower surface of the plastic package body, so that a certain interval is reserved between the lower surface of the plastic package body and a PCB when the transistor is attached to the PCB, and the heat dissipation of the transistor is facilitated.
Specifically, the plurality of pins include a first pin 210, a second pin 220, and a third pin 230, the first pin 210 and the second pin 220 are located on the left side of the plastic package body 100, and the third pin 300 is located on the right side of the plastic package body 100. The pad portion 211 of the first lead 210 and the pad portion 221 of the second lead 220 are wrapped in the plastic package body 100, and the soldering portion 212 of the first lead 210, the soldering portion 222 of the second lead 220 and the soldering portion 232 of the third lead 230 are led out from the plastic package body 100. The pad portion 231 of the third lead 230 is located between the pad portion 211 of the first lead 210 and the pad portion 221 of the second lead 220, the die 232 is disposed on the pad portion 231 of the third lead 230, and the pad portion 211 of the first lead 210 and the pad portion 221 of the second lead 220 are connected to the die 232 through wires.
The third lead 230 is rectangular and has a large area, so as to facilitate heat dissipation of the whole transistor.
Optionally, in this embodiment, the pad portion of the lead and the soldering portion are soldered together by electron beam soldering, and the connection strength between the pad portion and the soldering portion is high and is not easily broken.
Optionally, in this embodiment, the upper surface of the pad portion and the upper surface of the soldering portion are located on the same plane, so as to facilitate the soldering connection of the pad portion and the soldering portion.
The technical scheme of the utility model through the weld part with the pin of triode and pad portion set up to different thickness to this makes to form the effect similar to bending between the weld part of pin and the pad portion, thereby need not to bend the pin and can raise the plastic-sealed body, makes the triode plastic-sealed body can keep certain interval with the PCB board when pasting the dress, makes the pin ground bottom of triode can paste the dress well on the PCB board ground pad position.
Compared with the prior art, the beneficial effects of the utility model reside in that: the method has the advantages of no need of bending the pins, simple process, low manufacturing cost and suitability for producing ultrathin flat triodes.
The above is only the preferred embodiment of the present invention, not used in the present invention, and any slight modifications, equivalent replacements and improvements made by the technical entity of the present invention to the above embodiments should be included in the protection scope of the technical solution of the present invention.
Claims (4)
1. A flat packaged high-power bipolar transistor is characterized by comprising a plastic package body, a plurality of pins arranged at two sides of the plastic package body,
each pin is provided with a pad part inserted in the plastic package body and a welding part led out from the plastic package body, the thickness of the pad part is larger than that of the welding part, and the lower surface of the welding part protrudes out of the lower surface of the plastic package body.
2. The flatly packaged high power bipolar transistor according to claim 1, wherein said pad portion and said soldering portion are soldered by electron beam soldering.
3. The flatly packaged high power bipolar transistor according to claim 2, wherein an upper surface of said pad portion and an upper surface of said soldering portion are located on the same plane.
4. The flat-packaged high-power bipolar transistor according to any one of claims 1 to 3, wherein the leads comprise a first lead, a second lead and a third lead, a die is disposed on the bonding pad portion of the third lead, and the bonding pad portion of the first lead and the bonding pad portion of the second lead are connected to the die through wires.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020212096.9U CN211062705U (en) | 2020-02-26 | 2020-02-26 | Flat packaged high-power bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020212096.9U CN211062705U (en) | 2020-02-26 | 2020-02-26 | Flat packaged high-power bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211062705U true CN211062705U (en) | 2020-07-21 |
Family
ID=71596877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020212096.9U Active CN211062705U (en) | 2020-02-26 | 2020-02-26 | Flat packaged high-power bipolar transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211062705U (en) |
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2020
- 2020-02-26 CN CN202020212096.9U patent/CN211062705U/en active Active
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