CN206828626U

CN206828626U - Evaporation metal mask

Info

Publication number: CN206828626U
Application number: CN201720384313.0U
Authority: CN
Inventors: 石渡宏平; 西刚广
Original assignee: Toppan Printing Co Ltd
Current assignee: Toppan Inc
Priority date: 2016-04-15
Filing date: 2017-04-13
Publication date: 2018-01-02
Anticipated expiration: 2027-04-13
Also published as: TWI661062B; KR101968066B1; JP6341347B2; WO2017179677A1; CN109072404B; KR20180117712A; JPWO2017179677A1; CN109072404A; TW201741475A

Abstract

A kind of evaporation metal mask, is made up of to the evaporation that each mask hole is divided with the key element of metal mask 2 mutually opposing in a first direction the first mask key elements and 2 mutually opposing in a second direction the second mask key elements.In the section orthogonal with first direction, the ratio between maximum of thickness of the minimum of the thickness of the first mask key element and the second mask key element is more than 70%.In each mask hole, the width of the mask hole in the section orthogonal with first direction is mask hole width, the maximum of the thickness of the second mask key element and be more than 41% the ratio between from the first opening to the minimum value of mask hole width the second opening.

Description

Evaporation metal mask

Technical field

It the utility model is related to a kind of evaporation metal mask.

Background technology

As one of display device manufactured using vapour deposition method, it is known that organic el display.Organic el display is possessed Organic layer, be the organic molecule to be distilled in process is deposited deposit.The metal mask used in process is deposited has Multiple mask holes, each mask hole are the paths passed through for sublimed organic molecule.

Each mask hole penetrates metal mask along thickness direction.In the vertical view that the face being open with multiple mask holes is opposed In, each mask hole marks off rectangular region, and multiple mask holes are for example arranged as alternate matrix column-shaped (for example, referring to patent text Offer 1).

Patent document 1：Japanese Unexamined Patent Publication 2004-281339 publications

However, the width mutually between adjacent mask hole, sometimes mask hole bearing of trend and with the bearing of trend There is mutually different size on the direction of intersection.Compared with the other parts in metal mask, the width between mask hole is relative Less part is the relatively low frangible portion of intensity.In thickness less than in 1mm metal mask, when such frangible portion and mask hole During ground alternate repetition each along a direction, produce what is be connected along the orientation of frangible portion in metal mask sometimes Bending.

Such situation, it is not limited to the evaporation gold used in the manufacture of the display device including organic el display Belong to mask, for connected up in various device possesseds formation, use in the evaporation of various device possessed functional layers etc. Evaporation with metal mask be also common.In addition, such situation, for being faced at one be open with multiple mask holes Multiple mask holes are arranged as the metal mask of clathrate in the vertical view put, the opening of each mask hole has generally square structure In and it is common.

Utility model content

The purpose of this utility model is to provide a kind of evaporation metal mask, can suppressed along the arrangement side of mask hole To connected bending.

For solve the evaporation of above-mentioned problem be with metal mask possess along a first direction and with above-mentioned first party The multiple mask holes arranged to orthogonal second direction.Above-mentioned evaporation metal mask possesses the first face and the second face, each above-mentioned Mask hole has the first opening in the upper shed of above-mentioned first face and the second opening in the upper shed of above-mentioned second face.To each The key element for the above-mentioned evaporation metal mask that aforementioned mask hole is divided, by 2 mutually opposing on above-mentioned first direction First mask key element and mutually opposing 2 the second mask key elements in above-mentioned second direction are formed.Above-mentioned first mask will Element and aforementioned mask hole are along each ground alternate repetition of above-mentioned first direction, also, above-mentioned second mask key element is covered with above-mentioned Nib along above-mentioned second direction it is each one ground alternate repetition.The width that above-mentioned first mask key element has along above-mentioned first direction Degree, the width having less than above-mentioned second mask key element along above-mentioned second direction.In the section orthogonal with above-mentioned first direction In, the ratio between maximum of thickness of the minimum of the thickness of above-mentioned first mask key element and above-mentioned second mask key element for 70% with On.In each aforementioned mask hole, the width in the aforementioned mask hole in the section orthogonal with above-mentioned first direction is mask hole width, The aforementioned mask hole width of above-mentioned first opening is less than the aforementioned mask hole width of the above-mentioned second opening.Above-mentioned second mask key element Thickness above-mentioned maximum and from above-mentioned first opening to above-mentioned second opening aforementioned mask hole width minimum value The ratio between be more than 41%.

According to above-mentioned composition, in the section orthogonal with first direction, the deviation quilt of the thickness in evaporation metal mask It is suppressed to, the difference of the minimum of the thickness of the maximum of the thickness of the second mask key element and the first mask key element becomes less than 30%.Therefore, in evaporation metal mask, the difference quilt of the intensity of the connected part of the first mask key element and the part beyond it It is suppressed to and the degree that the situation of bending is inhibited is produced in the part that the first mask key element is connected.

In addition, in evaporation metal mask, mask hole width is bigger, then along the first mask key element of second direction Length is bigger.On the other hand, the thickness of the first mask key element by clipping the second mask of the first mask key element in a second direction The maximum of the thickness of key element substantially determines that maximum is bigger, then the thickness of the first mask key element is bigger.

In this regard, according to above-mentioned composition, due to the maximum and mask hole width of the thickness of the second mask key element The ratio between minimum value is more than 41%, therefore compared with the other parts of evaporation metal mask, the intensity of each first mask key element The size of the first mask key element is not centered on as bending.

As a result, it is possible to suppress to produce on evaporation metal mask along the connected bending of the orientation of mask hole.

It is preferably that multiple aforementioned mask holes are along above-mentioned first direction between certain in above-mentioned evaporation metal mask Away from arrangement, maximum and the above-mentioned spacing of the thickness of the above-mentioned first mask key element in the section orthogonal with above-mentioned second direction The ratio between be more than 6%.

Spacing along a first direction, it is key element, i.e. the first mask key element and the space for forming evaporation metal mask Least unit.Wherein, the first mask key element is that the size of the organic layer with being formed by evaporation metal mask is unrelated, almost The part of size as defined in being maintained.The size of first mask key element determines such as by the size peripheral circuit, is carrying The aspect of the luminous efficiency of high organic el display, the first mask key element is to be set as the part of minimal size.Separately On the one hand, the space that spacing is included is the part of the resolution ratio of size according to required by organic el display etc. and change.

In this regard, in evaporation metal mask, even if the size of spacing changes, i.e. though what spacing was included The size in space changes, and the maximum of the thickness of the first mask key element is also maintained to be more than defined size.Therefore, it is possible to press down The generation of the bending of first mask key element in evaporation metal mask processed.

It is preferably that aforementioned mask hole width is the mask hole along above-mentioned second direction in above-mentioned evaporation metal mask Width is the second mask hole width, and the width in the aforementioned mask hole in the section orthogonal with above-mentioned second direction is along above-mentioned the The mask hole width in one direction is the first mask hole width, is less than in the above-mentioned first mask hole width of above-mentioned first opening The above-mentioned first mask hole width of above-mentioned second opening, the maximum of the thickness of above-mentioned first mask key element with from above-mentioned first It is more than 7% to be open to the ratio between the minimum value of above-mentioned first mask hole width between the above-mentioned second opening.

It is the width of mask hole relative to the space extended along above-mentioned first direction in evaporation metal mask, The maximum of the thickness of the first mask key element divided on first direction to mask hole is bigger, then evaporation metal mask Intensity is higher.

In this regard, according to above-mentioned composition, the maximum of the thickness of the first mask key element and the first mask hole width The ratio between minimum value is more than 7%, therefore compared with other positions of evaporation metal mask, the intensity of each first mask key element into The size of the first mask key element is not concentrated on further for bending.

In above-mentioned evaporation metal mask, the direction orthogonal from the direction extended with above-mentioned evaporation with metal mask is seen Examine, multiple aforementioned mask holes can also be arranged as alternate matrix column-shaped.

According to above-mentioned composition, it is arranged as in the evaporation metal mask of alternate matrix column-shaped, can suppresses in multiple mask holes The bending connected along the direction of mask hole arrangement.

The effect of utility model

According to the utility model, can suppress along the connected bending of the orientation of mask hole.

Brief description of the drawings

Fig. 1 is that a part for an embodiment for representing to embody evaporation of the present utility model with metal mask is stood The partial perspective view of body construction.

Fig. 2 is the fragmentary top for a part of planar configuration for representing the evaporation metal mask in the vertical view opposed with the first face View.

Fig. 3 is the partial section for the part for showing schematically the section orthogonal with first direction.

Fig. 4 is the partial section for the part for showing schematically the section orthogonal with first direction.

Fig. 5 is the partial section for the part for showing schematically the section orthogonal with second direction.

Fig. 6 is the process chart for illustrating the formation process of the resist layer in the manufacture method of evaporation metal mask.

Fig. 7 is the process for illustrating the pattern formation process of the resist layer in the manufacture method of evaporation metal mask Figure.

Fig. 8 is a part of plane for representing the Resist patterns in the vertical view opposed with the first face of metal mask base material The partial top view of construction.

Fig. 9 is a part of plane for representing the Resist patterns in the vertical view opposed with the second face of metal mask base material The partial top view of construction.

Figure 10 is for illustrating being entered from first in face of metal mask with base material in the manufacture method of evaporation metal mask The process chart of the process of row etching.

Figure 11 is for illustrating that evaporation is lost with the manufacture method of metal mask from second in face of metal mask with base material The process chart of the process at quarter.

Figure 12 is the office for the part for showing schematically the section orthogonal with first direction in embodiment 1 to embodiment 3 Portion's sectional view.

Figure 13 is the partial cross section for the part for showing schematically the section orthogonal with first direction in comparative example 1,3,5 Figure.

Figure 14 is the partial cross section for the part for showing schematically the section orthogonal with first direction in comparative example 2,4,6 Figure.

Figure 15 is the planar configuration from the direction opposed with the first face for the evaporation metal mask for representing variation Top view.

The explanation of symbol

10th, 40,50,60 ... evaporation metal mask, the face of 10a, 31a, 60a ... first, the face of 10b, 31b ... second, 11, 43rd, 53,61 ... mask hole, 11a ... first are open, and 11b ... second is open, the first holes of 11c ... key element, the inner circumferentials of 11cp ... first Face, the second holes of 11d ... key element, the inner peripheral surfaces of 11dp ... second, the continuous key elements of 11e ..., 21,41,51,62 ... first mask key elements, 22nd, 42,52,63 ... second mask key element, 31 ... metal mask base materials, 32 ... first resist layers, 33 ... second resists Layer, 34 ... first Resist patternss, the pattern elements of 34a, 35a ... first, the pattern elements of 34b, 35b ... second, 35 ... second is anti- Lose agent pattern, 35c ... gaps, 36 ... second protective layers, 37 ... first protective layers, the arcuation key element of cp1, dp1 ... first, dp2 ... Second arcuation key element, dp3 ... flex point key elements, R1 ... masks areas, R2 ... neighboring areas.

Embodiment

Referring to figs. 1 to Figure 14, the embodiment that evaporation of the present utility model is embodied with metal mask is entered Row explanation.Hereinafter, the composition to evaporation metal mask, the manufacture method of evaporation metal mask and embodiment are entered successively Row explanation.In addition, evaporation described below is in the manufacture for the organic el display for possessing multiple organic layers with metal mask The evaporation metal mask used.

[composition of evaporation metal mask]

Evaporation is illustrated with the composition of metal mask referring to figs. 1 to Fig. 5.

As shown in Figure 1, evaporation metal mask 10 possesses the first face 10a and the second face 10b.Evaporation metal mask 10 extend with D1 along a first direction and have the plate of defined width along the second direction D2 orthogonal with first direction D1 Shape.

Evaporation has multiple mask holes 11 of D1 along a first direction and second direction D2 arrangements with metal mask 10.From with Direction observation opposed first face 10a, the first face 10a are divided into：Region formed with multiple mask holes 11 is masks area R1；And surround masks area R1 neighboring area R2.Masks area R1 has been carried out for forming multiple mask holes 11 The region of processing, neighboring area R2 are the regions that the processing is not carried out.

First face 10a can also along a first direction D1 separate as defined in compartment of terrain mark off multiple masks area R1, Compartment of terrain as defined in being spaced one from D1 along a first direction and second direction D2 marks off multiple masks area R1.

Evaporation metal mask 10 is metal system, preferably invar alloy system.In addition, formation of the evaporation with metal mask 10 Material can also be the metal beyond invar alloy.Evaporation uses in metal mask 10, neighboring area R2 thickness T for example preferred For less than more than 20 μm 50 μm.

Fig. 2 represents the planar configuration of the evaporation metal mask 10 from the direction opposed with the first face 10a.

As shown in Figure 2, in evaporation with metal mask 10, the evaporation divided to each mask hole 11 is covered with metal The key element of mould 10, by 2 mutually opposing in the first direction dl the first mask key elements 21 and mutual in a second direction d 2 2 opposed the second mask key elements 22 are formed.

In evaporation with metal mask 10, the first mask key element 21 is handed on each ground of D1 along a first direction with mask hole 11 For repeatedly, also, the second mask key element 22 and mask hole 11 are along each ground alternate repetitions of second direction D2.

First mask key element 21 width that D1 has along a first direction is the first width W1, the second mask key element 22 along The width that second direction D2 has is the second width W2.First width W1 of the first mask key element 21 is less than the second mask key element 22 The second width W2.

Evaporation is extended with metal mask 10 along the plane as defined in first direction D1 and second direction D2, is used from evaporation The direction that the direction of the extension of metal mask 10 is orthogonal is observed, and multiple mask holes 11 are arranged as alternate matrix column-shaped.In other words, from Simultaneously direction observation opposed 10a, multiple mask holes 11 are arranged as alternate matrix column-shaped.

In the vertical view opposed with the first face 10a, each mask hole 11 marks off rectangular-shaped region, each mask hole 11 along The width that first direction D1 has, the width having more than the mask hole 11 along second direction D2.Multiple mask holes 11 along First direction D1 arranges according to the first certain spacing P1.

In multiple mask holes 11, multiple mask holes 11 of D1 arrangements form a row along a first direction.It is each forming Row multiple mask holes 11 in, first direction D1 position every one and it is overlapped.On the other hand, in a second direction d 2 In mutually adjacent row, relative to the position of multiple mask holes 11 of a row in the first direction dl is formed, another is formed The position of multiple mask holes 11 of row in the first direction dl offsets 1/2 spacing.In multiple mask holes 11 in the first direction dl Location overlap mask hole 11, arranged along second direction D2 according to certain the second spacing P2.Second spacing P2 is and Value equal one spacing P1.First spacing P1 typically carries out profiling to primitive shape with the second spacing P2 and turns into mutually equal Value.

In multiple mask holes 11 of alternate matrix column-shaped are arranged as, positioned at 2 adjacent in the first direction dl mask holes A first mask key element 21 between 11, as the evaporation metal mask 10 each divided to 2 mask holes 11 Key element work.In addition, in a second direction d 2 between 2 adjacent mask holes 11, in the metal mask 10, work of evaporation For a part for the part worked for the second mask key element 22 of a mask hole 11, with as another mask hole The part that 11 the second mask key element 22 works it is a part of overlapped.

In addition, in multiple mask holes 11 of alternate matrix column-shaped are arranged as, in a second direction d 2 in mutually adjacent row, The skew of the position of mask hole 11 in the first direction dl, 1/2 spacing can be less than, 1/2 spacing can also be more than.In addition, In each mask hole 11, along a first direction D1 with width with along second direction D2 with width can also mutually mutually Deng.

Fig. 3 represents the construction in evaporation section orthogonal with first direction D1 in metal mask 10, and is to pass through first party To the construction in the central section of D1 the first mask key element 21.Fig. 3 represents the cross-sectional configuration along Fig. 2 I-I lines.

As shown in Figure 3, in the section orthogonal with first direction D1, the thickness of the first mask key element 21 has minimum Value T1m, the thickness of the second mask key element 22 have maximum T2M.

In the section orthogonal with first direction D1, the minimum T1m of the thickness of the first mask key element 21 is preferably 12.5 μ More than m.The ratio between the minimum T1m of the thickness of first mask key element 21 and maximum T2M of thickness of the second mask key element 22 is More than 70%.That is, the maximum T2M of the minimum T1m of the thickness of the first mask key element 21 and the thickness of the second mask key element 22 Meet following formula (1).

T1m/T2M × 100 >=70 ... formula (1)

According to such evaporation metal mask 10, in the section orthogonal with first direction D1, the first mask key element 21 Thickness be guaranteed to more than 12.5 μm.Therefore, in evaporation with metal mask 10, the connected part of the first mask key element 21 with The difference of the intensity of part beyond it is suppressed more as the situation that the connected part of the first mask key element 21 produces bending obtains To the degree of suppression.

Also, evaporation is suppressed to the deviation of the thickness in metal mask 10, the pole of the thickness of the second mask key element 22 The minimum T1m of big value T2M and the thickness of the first mask key element 21 difference is less than 30%.

Therefore, in evaporation with metal mask 10, the connected part of the first mask key element 21 is strong with the part beyond it The difference of degree is suppressed to, and the degree that the situation of bending is inhibited is produced in the part that the first mask key element 21 is connected.As a result, energy It is enough to suppress in the evaporation connected bending of orientation of the generation along mask hole 11 on metal mask 10, especially along first The bending that the direction that mask key element 21 arranges is connected.

Each mask hole 11 have the first of the first face 10a upper sheds be open 11a and in the second face 10b upper sheds the Two opening 11b.Each mask hole 11 by including first opening 11a the first hole key element 11c and include second opening 11b second Hole key element 11d is formed, and the first hole key element 11c is connected with the second hole key element 11d on the thickness direction of evaporation metal mask 10. The part that first hole key element 11c is connected with the second hole key element 11d is continuous key element 11e.

In each mask hole 11, the width of the mask hole 11 in the section orthogonal with first direction D1 and be along second The width of direction D2 mask hole 11 is the second mask hole width Wm2.First opening 11a the second mask hole width Wm2 is less than Second opening 11b the second mask hole width Wm2.

First hole key element 11c the second mask hole width Wm2 is maximum in the first opening 11a, with towards continuous key element 11e and taper into, the second hole key element 11d the second mask hole width Wm2 is maximum in the second opening 11b, with towards even Continue key element 11e and taper into.That is, in each mask hole 11, continuous key element 11e the second mask hole width Wm2 is minimum.This Outside, the first hole key element 11c length along evaporation with the thickness direction of metal mask 10, less than the second hole key element 11d edge The length of the thickness direction of evaporation metal mask 10.

The ratio between the maximum T2M of the thickness of second mask key element 22 and the second mask hole width Wm2 minimum value Wmm2 is More than 41%.That is, the maximum T2M of the second mask hole width Wm2 minimum value Wmm2 and the thickness of the second mask key element 22 Meet following formula (2).

T2M/Wmm2 × 100 >=41 ... formula (2)

In evaporation with metal mask 10, the second mask hole width Wm2 is bigger, then along second direction D2 the first mask The length of key element 21 is bigger.On the other hand, the thickness of the first mask key element 21, will by clipping the first mask in a second direction d 2 The maximum T2M of the thickness of second mask key element 22 of element 21 substantially determines that maximum T2M is bigger, then the first mask key element 21 thickness is bigger.

In this regard, in above-mentioned evaporation with metal mask 10, the maximum T2M of the thickness of the second mask key element 22 It is more than 41% with the ratio between the second mask hole width Wm2 minimum value Wmm2, therefore other portions with evaporation with metal mask 10 Split-phase ratio, the intensity of each first mask key element 21 turn into the size that bending is not centered on the first mask key element 21.

As shown in Figure 4, the face divided to the second hole key element 11d is the second inner peripheral surface 11dp, with first party In the section orthogonal to D1, the second inner peripheral surface 11dp will with the first arcuation key element dp1, the second arcuation key element dp2 and flex point Plain dp3.In the second inner peripheral surface 11dp, 2 the first arcuation key element dp1 are opposed in a second direction d 2,2 the second arcuation key elements Dp2 is opposed in a second direction d 2, also, 2 flex point key element dp3 are opposed in a second direction d 2.

First arcuation key element dp1 includes continuous key element 11e, and the second arcuation key element dp2 includes the second opening 11b.First arc Shape key element dp1 radius of curvature and the second arcuation key element dp2 radius of curvature are mutually different, the first arcuation key element dp1 curvature Radius is more than the second arcuation key element dp2 radius of curvature.Flex point key element dp3 is the first arcuation key element dp1 and the second arcuation key element The part that dp2 is connected.First arcuation key element dp1 and the second arcuation key element dp2 is respectively in the curvature with each arcuation key element The heart is located at evaporation curvature as the outside of metal mask 10.

The face divided to the first hole key element 11c is the first inner peripheral surface 11cp, in the section orthogonal with first direction D1 In, the first inner peripheral surface 11cp has the first arcuation key element cp1 for including the first opening 11a and continuous key element 11e.In the first inner circumferential In the 11cp of face, 2 the first arcuation key element cp1 are opposed in a second direction d 2.First arcuation key element cp1 has the first arcuation key element Cp1 curvature is centrally located at curvature as the outside of evaporation metal mask 10.

Fig. 5 represents the construction in evaporation with section orthogonal with second direction D2 in metal mask 10, and is by second The construction in the central section of the first mask key element 21 on the D2 of direction.Fig. 5 represents the section structure along Fig. 2 II-II lines Make.

As shown in Figure 5, in the section orthogonal with second direction D2, the first mask key element 21 has maximum T1M. The ratio between the maximum T1M of the thickness of first mask key element 21 and above-mentioned D1 along a first direction first spacing P1 for 6% with On.That is, D1 the first spacing P1 along a first direction and the maximum T1M of the first mask key element 21 meet following formula (3).

T1M/P1 × 100 >=6 ... formula (3)

D1 the first spacing P1 along a first direction, it is that key element, i.e. the first mask for forming evaporation metal mask 10 is wanted Element 21 and the least unit in space.Wherein, the first mask key element 21 be with formed by evaporation metal mask 10 it is organic Layer size it is unrelated, be substantially maintained the part of prescribed level.The size of first mask key element 21 is such as peripheral circuit Size determine that in terms of the luminous efficiency of organic el display is improved, the first mask key element 21 is to be set as minimum The part of the size of limit.On the other hand, the space that the first spacing P1 is included is size according to required by organic el display Resolution ratio etc. and the part that changes.

In this regard, in evaporation with metal mask 10, even if the first spacing P1 size changes, i.e. even if first The size in the space that spacing P1 is included changes, and the maximum T1M of the thickness of the first mask key element 21 is also maintained to be regulation greatly More than small.Therefore, it is possible to suppress to produce bending at the first mask key element 21 in evaporation metal mask 10.

In the section orthogonal with second direction D2, the first mask key element 21 has substantially pentagon shaped.Therefore, first Mask key element 21 is from along being maximum summit with a distance from the first face 10a side, the maximum T1M with thickness.

In each mask hole 11, the width of the mask hole 11 in the section orthogonal with second direction D2 and be along first The width of direction D1 mask hole 11 is the first mask hole width Wm1.First opening 11a the first mask hole width Wm1 is less than Second opening 11b the first mask hole width Wm1.

First mask hole width Wm1 is to have most from the first opening 11a towards the midway in the second opening 11b direction Small value Wmm1.The ratio between the maximum T1M of the thickness of first mask key element 21 and the first mask hole width Wm1 minimum value Wmm1 is More than 7%.That is, the maximum T1M of the first mask hole width Wm1 minimum value Wmm1 and the thickness of the first mask key element 21 is full The formula (4) in foot face.

T1M/Wmm1 × 100 >=7 ... formula (4)

In evaporation with metal mask 10, the space relative to the extensions of D1 along a first direction is the width of mask hole 11, The maximum T1M of the thickness of the first mask key element 21 divided in the first direction dl to mask hole 11 is bigger, then is deposited Intensity with metal mask 10 is higher.

In this regard, in evaporation with metal mask 10, the maximum T1M and first of the thickness of the first mask key element 21 The ratio between mask hole width Wm1 minimum value Wmm1 is more than 7%, therefore the intensity of each first mask key element 21 turns into and evaporation use Other positions of metal mask 10 are compared, and bending does not concentrate on the size of the first mask key element 21 further.

In addition, the film forming object for having used such evaporation metal mask 10, is formed organic as follows Layer.Hereinafter, the first direction D1 and second direction D2 and first of the film forming object after film forming of evaporation metal mask 10 are made Direction D1 and second direction D2 is corresponding and illustrates.

For example, when forming organic layer, first, using evaporation metal mask 10, blueness is formed on film forming object Organic layer.Then, using other evaporation metal masks, between blue organic layer in a second direction d 2 and second The position adjacent with a blue organic layer on the D2 of direction, the organic of green is formed in a manner of D1 along a first direction is arranged Layer and red organic layer.

In addition, for example, first, form the organic layer of blueness on film forming object with metal mask 10 using evaporation.Then, Using other evaporation metal masks, between blue organic layer in a second direction d 2 and in a second direction d 2 with one The adjacent position of individual blue organic layer, the organic layer of green and having for red are formed in a manner of being arranged along second direction D2 Machine layer.

[manufacture method of evaporation metal mask]

Reference picture 6 is illustrated to Figure 11 to evaporation with the manufacture method of metal mask 10.In addition, Fig. 6 to Figure 11 distinguishes The cross-sectional configuration suitable with the section of the I-I lines along Fig. 2 is represented, and is cross-sectional configuration corresponding with each manufacturing process.

As shown in Figure 6, when manufacturing evaporation with metal mask 10, first, prepare to be covered with metal for forming evaporation The metal mask of mould 10 base material 31.Metal mask is preferably invar alloy system with base material 31, and metal mask base material 31 is had Some thickness is for example preferably less than more than 20 μm 50 μm.

It is the second face 31b that metal mask has the face of the first face 31a and side opposite with the first face 31a with base material 31.Gold Belong to mask with the first face 31a of base material 31 equivalent to the first face 10a of evaporation metal mask 10, metal mask base material 31 Second face 10bs of the second face 31b equivalent to evaporation with metal mask 10.

The first resist layer 32 is formed on first face 31a of the metal mask with base material 31, is formed on the second face 31b Two resist layers 33.Each resist layer can be formed on metal mask base material 31 by pasting dry film photoresist, also may be used To be formed by applying the masking liquid of the formation material containing resist layer on the surface.The formation material of resist layer is preferably The anticorrosive additive material of minus, but can also be the anticorrosive additive material of eurymeric.

As shown in Figure 7, by removing the one of the first resist layer 32 from metal mask with the first face 31a of base material 31 Part, it is consequently formed the first Resist patterns 34.In addition, by removing second from metal mask with the second face 31b of base material 31 A part for resist layer 33, it is consequently formed the second Resist patterns 35.When forming each Resist patterns, if minus Resist layer, then only carried out to remaining in metal mask in resist layer, as Resist patterns with the part on base material 31 Exposure.Moreover, the resist layer after exposure is developed.In addition, if the resist layer of eurymeric, then only to resist layer In, be exposed from the part that metal mask is removed with base material 31.

In addition, the exposure and the exposure of the second resist layer 33 of the first resist layer 32 can be carried out simultaneously, can also divide Do not carry out independently.In addition, the development and the development of the second resist layer 33 of the first resist layer 32 can be carried out simultaneously, also may be used Separately to carry out.

First Resist patterns 34 has multiple first pattern elements 34a and multiple second pattern elements 34b.First is anti- It is for the resist figure in metal mask with the first hole key element 11c that multiple mask holes 11 are formed on base material 31 to lose agent pattern 34 Case.Wherein, each first pattern elements 34a is for being wanted in metal mask with the pattern that the first mask key element 21 is divided on base material 31 Element, each second pattern elements 34b be in metal mask with the pattern elements that the second mask key element 22 is divided on base material 31.

Second Resist patterns 35 has multiple first pattern elements 35a and multiple second pattern elements 35b.Second is anti- It is for the resist figure in metal mask with the second hole key element 11d that multiple mask holes 11 are formed on base material 31 to lose agent pattern 35 Case.Same with the first Resist patterns 34, each first pattern elements 35a is to be used to divide first with base material 31 in metal mask The pattern elements of mask key element 21, each second pattern elements 35b are used in metal mask with dividing the second mask on base material 31 The pattern elements of key element 22.

Fig. 8 is to represent the first Resist patterns in the vertical view opposed with the first face 31a of metal mask base material 31 34 planar configuration.In addition, in fig. 8, for the ease of understanding the shape of the first Resist patterns 34, and to the first resist figure Case 34 addition of a little.

As shown in Figure 8, in the vertical view opposed with the first face 31a of base material 31 with metal mask, the first pattern will Plain 34a extends along second direction D2, and D1 is arranged with separating certain intervals along a first direction.In the first direction dl first The spacing that pattern elements 34a is set repeatedly, with evaporation with the first mask key element 21 in metal mask 10 along a first direction The spacing that D1 is set repeatedly is roughly equal.

D1 extends second pattern elements 34b along a first direction, in a second direction d 22 adjacent the second pattern elements 34b, positioned at the position of the first pattern elements 34a separated from each other Length Quantity.First pattern elements 34a D1 along a first direction Possessed width W34a, less than the second pattern elements 34b along width W34b possessed by second direction D2.

Fig. 9 represents the second Resist patterns 35 in the vertical view opposed with the second face 31b of base material 31 with metal mask Planar configuration.In addition, in fig.9, for the ease of understanding the shape of the second Resist patterns 35, and to the second Resist patterns 35 addition of a little.

As shown in Figure 9, in the vertical view opposed with the second face 31b of base material 31 with metal mask, the first pattern will Plain 35a extends along second direction D2, and D1 is arranged with separating certain intervals along a first direction.In the first direction dl first The spacing that pattern elements 35a is set repeatedly, with evaporation with the first mask key element 21 in metal mask 10 along a first direction The spacing that D1 is set repeatedly is roughly equal.

D1 extends second pattern elements 35b along a first direction, in a second direction d 22 adjacent the second pattern elements 35b, positioned at the position for the Length Quantity for being separated from each other the first pattern elements 35a.Second pattern elements 35b has along a first direction The gap 35c of D1 extensions, gap 35c are located at each second pattern elements 35b second direction D2 center.

Width W35c possessed by gap 35c along second direction D2, will less than 2 the second patterns on second direction D2 The distance between plain 35b, i.e. the first pattern elements 35a are along width W35a2 possessed by second direction D2.In addition, the first figure Case key element 35a width W35a1 possessed by D1 along a first direction, less than the second pattern elements 35b along second direction D2 institutes The width W35b having.

First pattern elements 35a is located at along between the second adjacent second direction D2 pattern elements 35b, in second direction Upper 2 the second pattern elements 35b with clipping the first pattern elements 35a of D2 are connected.

As shown in Figure 10, metal mask is carried out with base material 31 from the first face 31a using the first Resist patterns 34 Etching.In addition, Figure 10 represents the metal mask base material from the midway that the first face 31a is etched to metal mask base material 31 31 state.If metal mask base material 31 is invar alloy system, the etching solution as metal mask with base material 31, example If use chlorination iron liquid.

In addition, when being etched from the first face 31a to metal mask base material 31, starting metal mask base material 31 Etching before, in the second Resist patterns 35, with and the face of the opposite side in face that contacts of metal mask base material 31 on, formed Second protective layer 36.

Second protective layer 36 is when being etched from the first face 31a to metal mask base material 31, for preventing metal The layer that mask is etched with base material 31 from the second face 31b.As long as the formation material of the second protective layer 36 is relative to metal mask There is the material of tolerance with the etching solution of base material 31.

After having used the etching of metal mask base material 31 of the first Resist patterns 34 to terminate, from the second resist Pattern 35 peels off the second protective layer 36, and peels off the first Resist patterns 34 from metal mask with the first face 31a of base material 31.

As shown in Figure 11, metal mask is carried out with base material 31 from the second face 31b using the second Resist patterns 35 Etching.In addition, Figure 11 represents the metal mask base material from the midway that the second face 31b is etched to metal mask base material 31 31 state.If metal mask base material 31 is invar alloy system, the etching solution as metal mask with base material 31, example If use chlorination iron liquid.

In addition, when being etched from the second face 31b to metal mask base material 31, starting metal mask base material 31 Etching before, form the first protective layer 37 on first face 31a of the metal mask with base material 31.

First protective layer 37 is when being etched from the second face 31b to metal mask base material 31, for preventing metal The layer that mask is etched with base material 31 from the first face 31a.As long as the formation material of the first protective layer 37 is relative to metal mask There is the material of tolerance with the etching solution of base material 31.

After having used the etching of metal mask base material 31 of the second Resist patterns 35 to terminate, used from metal mask First face 31a of base material 31 peels off the first protective layer 37, and peels off the second Resist patterns 35 from the second face 31b.Thereby, it is possible to Obtain evaporation metal mask 10.

When metal mask is etched with base material 31 from the second face 31b, metal mask with base material 31, from the second resist The bigger part of area that pattern 35 exposes, the speed being etched are faster.Therefore, the thickness direction in metal mask with base material 31 On, with metal mask with base material 31, compared with the etching speed of the part overlapping with the second pattern elements 35b gap 35c, position The etching speed of part between the second pattern elements 35b is faster.

Thus, in metal mask with base material 31, formed with the larger part of etch quantity and the less part of etch quantity. As a result, it is possible to obtain following evaporation metal mask 10：In the section orthogonal with first direction D1, the first mask key element 21 The minimum T1m of thickness and the ratio between the maximum T2M of thickness of the second mask key element 22 be more than 70%, also, second covers The ratio between the maximum T2M of the thickness of mould key element 22 and the second mask hole width Wm2 minimum value Wmm2 is more than 41%.

[embodiment]

Reference picture 12 illustrates to Figure 14 to embodiment and comparative example.In addition, in embodiment explained below 1 to reality Apply in example 3, the thickness of the metal mask base material used in the manufacture of the evaporation metal mask of each embodiment is mutually different. But the ratio between minimum T1m and maximum T2M of each evaporation metal mask, maximum T2M and the second mask hole width Wm2 The ratio between the ratio between minimum value Wmm2, maximum T1M and the first spacing P1 and maximum T1M and the first mask hole width Wm1 The ratio between minimum value Wmm1, it is between the embodiments almost equal value.Therefore, for convenience, with reference to figure to embodiment 1 to The evaporation of embodiment 3 is illustrated with metal mask.

In addition, in comparative example 1,3,5, the metal used in manufacture of the evaporation with metal mask of each comparative example is covered The thickness of mould base material is mutually different.But the ratio between minimum T1m and maximum T2M of each evaporation metal mask, maximum The ratio between the ratio between T2M and the second mask hole width Wm2 minimum value Wmm2, maximum T1M and first spacing P1 and maximum The ratio between T1M and the first mask hole width Wm1 minimum value Wmm1, is almost equal value between comparative example.Therefore, for side Just, the evaporation of comparative example 1,3,5 is illustrated with metal mask with reference to a figure.

In addition, in comparative example 2,4,6, the metal used in manufacture of the evaporation with metal mask of each comparative example is covered The thickness of mould base material is mutually different.But the ratio between minimum T1m and maximum T2M of each evaporation metal mask, maximum The ratio between the ratio between T2M and the second mask hole width Wm2 minimum value Wmm2, maximum T1M and first spacing P1 and maximum The ratio between T1M and the first mask hole width Wm1 minimum value Wmm1, is almost equal value between comparative example.Therefore, for side Just, the evaporation of comparative example 2,4,6 is illustrated with metal mask with reference to a figure.

[embodiment 1]

Prepare invar alloy system and the metal mask base material with 30 μ m thicks.By by the dry film photoresist of minus The first face of metal mask base material is pasted, thus forms the first resist layer on first face of the metal mask with base material, By the way that the dry film photoresist of minus is pasted onto on the second face of metal mask base material, thus the of metal mask base material The second resist layer is formed on two faces.

Pattern is carried out to the first resist layer to be formed, and forms the first Resist patterns with following shape.First In Resist patterns, the spacing of the first pattern elements positioning along a first direction is 195 μm, the first figure along a first direction The length of case key element is 30.0 μm, and the length along the first pattern elements of second direction is 33.5 μm.It is in addition, against corrosion first In agent pattern, the length along the second pattern elements of second direction is 64.0 μm.

Pattern is carried out to the second resist layer to be formed, and forms the second Resist patterns with following shape.Second In Resist patterns, the spacing of the first pattern elements positioning along a first direction is 195 μm, the first figure along a first direction The length of case key element is 16.5 μm, and the length along the first pattern elements of second direction is 58.3 μm.It is in addition, against corrosion second In agent pattern, the length along the second pattern elements of second direction is 39.1 μm, gap possessed by the second pattern elements Length is 10.3 μm.That is, in the second pattern elements, separated along second direction 2 parts positioning with gap it is respective in, Length along second direction is 14.4 μm.

Moreover, being etched by using chlorination iron liquid to metal mask with base material, the evaporation for thus obtaining embodiment 1 is used Metal mask.In the vertical view opposed with the first face, the first spacing P1, Yi Jiyan of multiple mask holes positioning along a first direction The the second spacing P2 for the multiple mask hole positioning of second direction is 195 μm.

As shown in Figure 12, it is able to confirm that, in the section orthogonal with first direction D1, the thickness of the first mask key element 21 Degree has minimum T1m, also, the thickness of the second mask key element 22 has maximum T2M, and is able to confirm that minimum T1m is 12.5 μm, maximum T2M is 17.7 μm.That is, it is 70.6% to be able to confirm that the ratio between minimum T1m and maximum T2M.Also, energy It is 6.4% enough to confirm the ratio between minimum T1m and the second spacing P2.

Furthermore it is possible to confirm, the second mask hole width Wm2 minimum value Wmm2 is 42.6 μm, and maximum T2M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 41.5%.

In embodiment 1, as using Fig. 5 as illustrating before, in the section orthogonal with second direction D2, energy Enough confirm that the first mask key element 21 has substantially pentagon shaped.Furthermore it is possible to confirm that the first mask key element 21 has maximum T1M, and it is able to confirm that maximum T1M is 12.5 μm.As noted previously, as multiple mask holes along a first direction D1 arrangements the One spacing P1 is 195 μm, therefore is able to confirm that the ratio between maximum T1M and the first spacing P1 are 6.4%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 167.9 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 7.4%.

[embodiment 2]

Prepare invar alloy system and the metal mask base material with 25 μ m thicks.In addition, except by the first resist figure Beyond the size of case and the size of the second Resist patterns are changed as described below, by same as Example 1 Method obtains the evaporation metal mask of embodiment 2.In the vertical view opposed with the first face, be able to confirm that multiple mask holes along The second spacing P2 that first spacing P1 of first direction positioning and multiple mask holes position along second direction is 162.5 μm.

In the first Resist patterns, the spacing of the first pattern elements positioning along a first direction is 162.5 μm, along The length of first pattern elements of first direction is 25 μm, and the length along the first pattern elements of second direction is 27.9 μm. In addition, in the first Resist patterns, the length along the second pattern elements of second direction is 53.3 μm.

In the second Resist patterns, the spacing of the first pattern elements positioning along a first direction is 162.5 μm, along The length of first pattern elements of first direction is 13.8 μm, and the length along the first pattern elements of second direction is 48.6 μ m.In addition, in the second Resist patterns, the length along the second pattern elements of second direction is 32.6 μm, and the second pattern will The length in gap possessed by element is 8.6 μm.That is, in the second pattern elements, 2 positioned with gap are separated along second direction Individual part it is respective in, along second direction length be 12.0 μm.

As shown in Figure 12, embodiment 2 evaporation with metal mask 10, in the section orthogonal with first direction D1 In, be able to confirm that the first mask key element 21 thickness minimum T1m be 10.4 μm, the thickness of the second mask key element 22 it is very big Value T2M is 14.8 μm.That is, it is 70.3% to be able to confirm that the ratio between minimum T1m and maximum T2M.Further, it is possible to confirm minimum The ratio between T1m and the second spacing P2 are 6.4%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 35.8 μm, maximum T2M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 41.3%.

Also, embodiment 2 evaporation with metal mask 10, can be true in the section orthogonal with second direction D2 The maximum T1M for recognizing the thickness of the first mask key element 21 is 10.4 μm.Due to multiple mask holes 11, D1 is arranged along a first direction The first spacing P1 be 162.5 μm, therefore be able to confirm that the ratio between maximum T1M and the first spacing P1 for 6.4%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 139.0 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 7.5%.

[embodiment 3]

Prepare invar alloy system and the metal mask base material with 20 μ m thicks.In addition, except by the first resist figure Beyond the size of case and the size of the second Resist patterns are changed as described below, by same as Example 1 Method has obtained the evaporation metal mask of embodiment 3.In the vertical view opposed with the first face, multiple mask holes are along first party The second spacing P2 that the first spacing P1 and multiple mask holes to positioning position along second direction is 130 μm.

In the first Resist patterns, the spacing of the first pattern elements along a first direction positioning is 130 μm, along the The length of first pattern elements in one direction is 20 μm, and the length along the first pattern elements of second direction is 22.3 μm.This Outside, in the first Resist patterns, the length along the second pattern elements of second direction is 42.7 μm.

In the second Resist patterns, the spacing of the first pattern elements along a first direction positioning is 130 μm, along the The length of first pattern elements in one direction is 11 μm, and the length along the first pattern elements of second direction is 38.9 μm.This Outside, in the second Resist patterns, the length along the second pattern elements of second direction is 26.1 μm, the second pattern elements institute The length in the gap having is 6.9 μm.That is, in the second pattern elements, 2 portions positioned with gap are separated along second direction Point it is respective in, along second direction length be 9.6 μm.

As shown in Figure 12, embodiment 3 evaporation with metal mask 10, in the section orthogonal with first direction D1 In, be able to confirm that the first mask key element 21 thickness minimum T1m be 8.8 μm, the thickness of the second mask key element 22 it is very big Value T2M is 11.9 μm.That is, it is 73.9% to be able to confirm that the ratio between minimum T1m and maximum T2M.Further, it is possible to confirm minimum The ratio between T1m and the second spacing P2 are 6.8%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 28.4 μm, maximum T2M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 41.9%.

Also, embodiment 3 evaporation with metal mask 10, can be true in the section orthogonal with second direction D2 The maximum T1M for recognizing the thickness of the first mask key element 21 is 8.8 μm.Due to multiple mask holes 11 along a first direction D1 arrangement First spacing P1 is 130 μm, therefore is able to confirm that the ratio between maximum T2M and the first spacing P1 are 6.8%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 112.2 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 7.8%.

[comparative example 1]

Prepare invar alloy system and the metal mask base material with 30 μ m thicks.In addition, except by the first resist figure The size of case and the size of the second Resist patterns are changed as described below, and are formd and wanted as the second pattern Beyond the second Resist patterns plain and that there are the pattern elements without gap, compared by method same as Example 1 Compared with the evaporation metal mask of example 1.In the vertical view opposed with the first face, multiple mask holes position along a first direction first between It it is 195 μm away from P1 and multiple mask holes the second spacing P2 positioned along second direction.

In the first Resist patterns, the spacing of the first pattern elements along a first direction positioning is 195 μm, along the The length of first pattern elements in one direction is 27.9 μm, and the length along the first pattern elements of second direction is 36.6 μm. In addition, in the first Resist patterns, the length along the second pattern elements of second direction is 60.9 μm.

In the second Resist patterns, the spacing of the first pattern elements along a first direction positioning is 195 μm, along the The length of first pattern elements in one direction is 5.2 μm, and the length along the first pattern elements of second direction is 76.9 μm.This Outside, in the second Resist patterns, the length along the second pattern elements of second direction is 20.6 μm.

As shown in Figure 13, comparative example 1 evaporation with metal mask 40, in the section orthogonal with first direction D1 In, being able to confirm that the thickness of the first mask key element 41 has minimum T1m, also, the thickness of the second mask key element 42 has pole Big value T2M, and it is able to confirm that minimum T1m is 9.7 μm, maximum T2M is 20.8 μm.That is, minimum T1m and maximum T2M The ratio between be 46.6%.Further, it is possible to confirm that the ratio between minimum T1m and the second spacing P2 are 5.0%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 42.3 μm, maximum T2M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 49.2%.

In comparative example 1, similarly to Example 1, in the section orthogonal with second direction D2, the first mask is able to confirm that Key element 41 has substantially pentagon shaped.Furthermore it is possible to confirm that the first mask key element 41 has maximum T1M, and it is able to confirm that Maximum T1M is 9.7 μm.As noted previously, as multiple mask holes the first spacing P1 that D1 is arranged along a first direction is 195 μ M, therefore it is able to confirm that the ratio between maximum T1M and the first spacing P1 are 5.0%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 165.9 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 5.8%.

[comparative example 2]

Prepare invar alloy system and the metal mask base material with 30 μ m thicks.Also, except by the second resist figure Beyond the size of case is changed as described below, the evaporation gold of comparative example 2 is obtained by method same as Example 1 Belong to mask.In the vertical view opposed with the first face, the first spacing P1 that multiple mask holes position along a first direction and multiple The second spacing P2 that mask hole positions along second direction is 195 μm.

That is, in the second Resist patterns, the spacing for being able to confirm that the first pattern elements positioning along a first direction is 195 μm, the length of the first pattern elements along a first direction is 16.5 μm, along the length of the first pattern elements of second direction Spend for 58.3 μm.In addition, in the second Resist patterns, the length along the second pattern elements of second direction is 39.2 μm, The length in gap possessed by second pattern elements is 14.4 μm.That is, between being separated in the second pattern elements, along second direction Unoccupied place positioning 2 parts it is respective in, along second direction length be 12.4 μm.

As shown in Figure 14, comparative example 2 evaporation with metal mask 50, in the section orthogonal with first direction D1 In, being able to confirm that the thickness of the first mask key element 51 has minimum T1m, also, the thickness of the second mask key element 52 has pole Big value T2M, and it is able to confirm that minimum T1m is 10.4 μm, maximum T2M is 12.7 μm.That is, be able to confirm that minimum T1m with The ratio between maximum T2M is 81.9%.Further, it is possible to confirm that the ratio between minimum T1m and the second spacing P2 are 5.3%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 42.6 μm, maximum T2M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 29.8%.

In comparative example 2, similarly to Example 1, in the section orthogonal with second direction D2, the first mask is able to confirm that Key element 51 has substantially pentagon shaped.Furthermore it is possible to confirm that the first mask key element 51 has maximum T1M, and it is able to confirm that Maximum T1M is 10.4 μm.As noted previously, as multiple mask holes the first spacing P1 that D1 is arranged along a first direction is 195 μ M, therefore it is able to confirm that the ratio between maximum T1M and the first spacing P1 are 5.3%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 165.6 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 6.3%.

[comparative example 3]

Prepare invar alloy system and the metal mask base material with 25 μ m thicks.In addition, except by the first resist figure The size of case and the size of the second Resist patterns are changed and formd as the second pattern elements as described below And beyond the second Resist patterns with the pattern elements without gap, compared by method same as Example 2 The evaporation metal mask of example 3.In the vertical view opposed with the first face, multiple mask holes position along a first direction first between It it is 162.5 μm away from P1 and multiple mask holes the second spacing P2 positioned along second direction.

In the first Resist patterns, the spacing of the first pattern elements positioning along a first direction is 162.5 μm, along The length of first pattern elements of first direction is 25 μm, and the length along the first pattern elements of second direction is 30.5 μm. In addition, in the first Resist patterns, the length along the second pattern elements of second direction is 50.8 μm.

In the second Resist patterns, the spacing of the first pattern elements positioning along a first direction is 162.5 μm, along The length of first pattern elements of first direction is 4.3 μm, and the length along the first pattern elements of second direction is 64.1 μm. In addition, in the second Resist patterns, the length along the second pattern elements of second direction is 17.2 μm.

As shown in Figure 13, comparative example 3 evaporation with metal mask 40, in the section orthogonal with first direction D1 In, be able to confirm that the first mask key element 41 thickness minimum T1m be 8.0 μm, the thickness of the second mask key element 42 it is very big Value T2M is 17.4 μm.That is, it is 46.0% to be able to confirm that the ratio between minimum T1m and maximum T2M.Further, it is possible to confirm minimum The ratio between T1m and the second spacing P2 are 4.9%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 35.1 μm, maximum T2M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 49.6%.

Also, comparative example 3 evaporation with metal mask 40, can be true in the section orthogonal with second direction D2 The maximum T1M for recognizing the thickness of the first mask key element 41 is 8.0 μm.Due to multiple mask holes 43 along a first direction D1 arrangement First spacing P1 is 162.5 μm, therefore is able to confirm that the ratio between maximum T1M and the first spacing P1 are 4.9%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 138.5 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 5.8%.

[comparative example 4]

Prepare invar alloy system and the metal mask base material with 25 μ m thicks.In addition, except by the second resist figure Beyond the size of case is changed as described below, the evaporation gold of comparative example 4 is obtained by method same as Example 2 Belong to mask.In the vertical view opposed with the first face, the first spacing P1 that multiple mask holes position along a first direction and multiple The second spacing P2 that mask hole positions along second direction is 162.5 μm.

That is, in the second Resist patterns, the spacing of the first pattern elements positioning along a first direction is 162.5 μm, The length of the first pattern elements along a first direction is 13.8 μm, and the length along the first pattern elements of second direction is 48.6μm.In addition, in the second Resist patterns, the length along the second pattern elements of second direction is 32.7 μm, second The length in gap possessed by pattern elements is 12.0 μm.That is, separated with gap in the second pattern elements, along second direction Positioning 2 parts it is respective in, along second direction length be 10.3 μm.

As shown in Figure 14, comparative example 4 evaporation with metal mask 50, in the section orthogonal with first direction D1 In, be able to confirm that the first mask key element 51 thickness minimum T1m be 8.3 μm, the thickness of the second mask key element 52 it is very big Value T2M is 10.4 μm.That is, it is 79.8% to be able to confirm that the ratio between minimum T1m and maximum T2M.Further, it is possible to confirm minimum The ratio between T1m and the second spacing P2 are 5.1%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 35.2 μm, maximum T1M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 29.5%.

Also, comparative example 4 evaporation with metal mask 50, can be true in the section orthogonal with second direction D2 The maximum T1M for recognizing the thickness of the first mask key element 51 is 8.3 μm.Due to multiple mask holes 53 along a first direction D1 arrangement First spacing P1 is 162.5 μm, therefore is able to confirm that the ratio between maximum T1M and the first spacing P1 are 5.1%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 138.0 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 6.0%.

[comparative example 5]

Prepare invar alloy system and the metal mask base material with 20 μ m thicks.In addition, except by the first resist figure The size of case and the size of the second Resist patterns are changed and formd as the second pattern elements as described below And beyond the second Resist patterns with the pattern elements without gap, compared by method same as Example 3 Compared with the evaporation metal mask of example 5.In the vertical view opposed with the first face, multiple mask holes position along a first direction first The second spacing P2 that spacing P1 and multiple mask holes position along second direction is 130 μm.

In the first Resist patterns, the spacing of the first pattern elements along a first direction positioning is 130 μm, along the The length of first pattern elements in one direction is 20 μm, and the length along the first pattern elements of second direction is 24.4 μm.This Outside, in the first Resist patterns, the length along the second pattern elements of second direction is 40.6 μm.

In the second Resist patterns, the spacing of the first pattern elements along a first direction positioning is 130 μm, along the The length of first pattern elements in one direction is 3.5 μm, and the length along the first pattern elements of second direction is 51.3 μm.This Outside, in the second Resist patterns, the length along the second pattern elements of second direction is 17.2 μm.

As shown in Figure 13, comparative example 5 evaporation with metal mask 40, in the section orthogonal with first direction D1 In, be able to confirm that the first mask key element 41 thickness minimum T1m be 7.0 μm, the thickness of the second mask key element 42 it is very big Value T2M is 13.7 μm.That is, it is 51.1% to be able to confirm that the ratio between minimum T1m and maximum T2M.Further, it is possible to confirm minimum The ratio between T1m and the second spacing P2 are 5.4%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 27.7 μm, maximum T2M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 49.5%.

Also, embodiment 5 evaporation with metal mask 40, can be true in the section orthogonal with second direction D2 The maximum T1M for recognizing the thickness of the first mask key element 41 is 7.0 μm.Due to multiple mask holes 43 along a first direction D1 arrangement First spacing P1 is 130 μm, therefore the ratio between maximum T1M and the first spacing P1 are 5.4%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 110.6 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 6.3%.

[comparative example 6]

Prepare invar alloy system and the metal mask base material with 20 μ m thicks.In addition, except by the second resist figure Beyond the size of case is changed as described below, the evaporation that comparative example 6 has been obtained by method same as Example 3 is used Metal mask.In the vertical view opposed with the first face, the first spacing P1, Yi Jiduo that multiple mask holes position along a first direction The second spacing P2 that individual mask hole positions along second direction is 130 μm.

That is, in the second Resist patterns, the spacing of the first pattern elements positioning along a first direction is 130 μm, edge The length for the first pattern elements of first direction is 11.0 μm, and the length along the first pattern elements of second direction is 38.9 μm.In addition, in the second Resist patterns, the length along the second pattern elements of second direction is 26.1 μm, the second pattern The length in gap possessed by key element is 9.6 μm.That is, in the second pattern elements, separate along second direction and position with gap 2 parts it is respective in, along second direction length be 8.3 μm.

As shown in Figure 14, comparative example 6 evaporation with metal mask 50, in the section orthogonal with first direction D1 In, be able to confirm that the first mask key element 51 thickness minimum T1m be 7.3 μm, the thickness of the second mask key element 52 it is very big Value T2M is 8.2 μm.That is, it is 89.0% to be able to confirm that the ratio between minimum T1m and maximum T2M.Further, it is possible to confirm minimum The ratio between T1m and the second spacing P2 are 5.6%.

Furthermore it is possible to which the minimum value Wmm2 for confirming the second mask hole width Wm2 is 28.1 μm, maximum T1M covers with second The ratio between nib width Wm2 minimum value Wmm2 is 29.2%.

Also, comparative example 6 evaporation with metal mask 50, can be true in the section orthogonal with second direction D2 The maximum T1M for recognizing the second mask key element 52 is 7.3 μm.Due to multiple mask holes 53 along a first direction D1 arrangement first between It is 130 μm away from P1, therefore is able to confirm that the ratio between maximum T1M and the first spacing P1 are 5.6%.

Further, it is possible to confirm, in the section orthogonal with second direction D2, the first mask hole width Wm1 minimum value Wmm1 is 110.0 μm, and is able to confirm that the ratio between maximum T1M and the first mask hole width Wm1 minimum value Wmm1 is 6.6%.

[evaluation]

After each evaporation metal mask has been manufactured, to being wanted in evaporation with the first mask whether is generated on metal mask Bending on the connected direction of element is evaluated.As described above, in each embodiment and each comparative example, with first direction D1 The ratio between maximum T2M, minimum T1m, minimum T1m and maximum T2M in the section in orthogonal direction, the second mask hole are wide Spend the ratio between Wm2 minimum value Wmm2, maximum T2M and the second mask hole width Wm2 minimum value Wmm2 and minimum T1m The ratio between with the second spacing P2, it is the value shown in following table 1.In addition, in each embodiment and each comparative example, with second direction The ratio between maximum T1M, maximum T1M and the first spacing P1 in section orthogonal D2, the first mask hole width Wm1 minimum value The ratio between Wmm1 and maximum T1M and the first mask hole width Wm1 minimum value Wmm1, it is the value shown in following table 1.

【Table 1】

The phase of the first mask key element 21 is not produced with metal mask 10, being able to confirm that in the evaporation of embodiment 1 to embodiment 3 Bending on direction even.On the other hand, comparative example 1 evaporation with metal mask 40, the evaporation metal mask of comparative example 3 40 and comparative example 5 evaporation with metal mask 40, being able to confirm that almost the producing on the whole with metal mask 40 in evaporation Bending on the connected direction of first mask key element 41.In addition, the steaming of the evaporation metal mask 50, comparative example 4 in comparative example 2 Plating is able to confirm that one in evaporation metal mask 50 with the evaporation of metal mask 50 and comparative example 6 metal mask 50 Part produces the bending on the connected direction of the first mask key element 51.

So, it is possible to confirm, each embodiment evaporation with metal mask 10, as long as minimum T1m and maximum T2M The ratio between for more than 70% and maximum T2M and the second mask hole width Wm2 the ratio between minimum value Wmm2 be more than 41%, then The bending on the connected direction of the first mask key element 21 can be suppressed.

On the other hand, evaporation metal mask 40 and the ratio of the evaporation metal mask 40 in comparative example 1, comparative example 3 Compared with example 5 evaporation with metal mask 40, although the ratio between maximum T2M and the second mask hole width Wm2 minimum value Wmm2 is More than 41%, but the ratio between minimum T1m and maximum T2M are less than 70%.Accordingly, it is believed that in each evaporation metal mask In 40, compared with the intensity of other parts, the intensity of the connected part of the first mask key element 41 is varied down to bending and concentrates on first The degree of the connected part of mask key element 41, as a result, generate bending with the entirety of metal mask 40 in evaporation.

In addition, evaporation metal mask 50 and the comparative example of the evaporation metal mask 50, comparative example 4 in comparative example 2 6 evaporation is with metal mask 50, although the ratio between minimum T1m and maximum T2M are more than 70%, and with first direction D1 just The deviation of thickness in the section of friendship is inhibited, but maximum T2M and the second mask hole width Wm2 minimum value Wmm2 it Than less than 41%.Accordingly, it is believed that in each evaporation with metal mask 50, compared with the intensity of other parts, the first mask The intensity of the connected part of key element 51 is varied down to the journey that bending is concentrated in a part for the connected part of the first mask key element 51 Degree, as a result, generate bending with a part for metal mask 50 in evaporation.

As described above, according to evaporation metal mask embodiment, can be exemplified below Effect.

(1) because evaporation is inhibited with the deviation of the thickness in metal mask 10, therefore, in evaporation metal mask 10 In, the difference of the intensity of the connected part of the first mask key element 21 and the part beyond it, be controlled as in the first mask key element 21 Connected part produces the degree that the situation of bending is inhibited.Therefore, it is possible to suppress to be produced with metal mask 10 in evaporation The bending connected along the orientation of mask hole 11.

(2) due to the second mask key element 22 thickness maximum T2M and the second mask hole width Wm2 minimum value Wmm2 The ratio between be more than 41%, therefore compared with evaporation is with the other parts of metal mask 10, the intensity of each first mask key element 21 into The size of the first mask key element 21 is not centered on for bending.

That is, the size change in the spaces that are included of the first spacing P1 (3) even if the first spacing P1 size changes, even if, The maximum T1M of the thickness of first mask key element 21 is also maintained to be more than defined size.Therefore, it is possible to suppress evaporation gold Belong in mask 10, bending is produced at the first mask key element 21.

(4) it is guaranteed in the thickness of the first mask key element 21 in more than 12.5 μm of composition, in evaporation metal mask In 10, the difference of the intensity of the connected part of the first mask key element 21 and the part beyond it, further it is controlled as covering first The connected part of mould key element 21 produces the degree that the situation of bending is inhibited.

(5) due to the first mask key element 21 thickness maximum T1M and the first mask hole width Wm1 minimum value Wmm1 The ratio between be more than 7%, therefore compared with evaporation is with other positions of metal mask 10, the intensity of each first mask key element 21 turns into Bending does not concentrate on the size of the first mask key element 21 further.

(6) evaporation of alternate matrix column-shaped is arranged as in multiple mask holes 11 with metal mask 10, can suppressing along covering The bending that the direction that nib 11 arranges is connected.

In addition, above-mentioned embodiment also suitably can be changed and implemented as described below.

Can also be, as shown in Figure 15, in evaporation with metal mask 60, with the first face 60a is opposed bows Depending in, D1 and second direction D2 is arranged multiple mask holes 61 according to certain spacing along a first direction, also, forms each row The position in the first direction dl of multiple mask holes 61 it is all identical in all arranging.That is, multiple mask holes 61 can also arrange For corner clathrate.

In such composition, and the first width W1 of the first mask key element 62 is less than the second mask key element 63 Second width W2.Moreover, in the section orthogonal with first direction D1, the minimum of the thickness of the first mask key element 62 The ratio between T1m and the maximum T2M of thickness of the second mask key element 63 are more than 70%, also, the thickness of the second mask key element 63 The openings of maximum T2M and first 11a the ratio between the second mask hole width Wm2 minimum value Wmm2 be more than 41%.Root According to such evaporation metal mask 60, can obtain and above-mentioned (1) and (2) identical effect.

Can also be, in the section orthogonal with second direction D2, the maximum T1M of the thickness of the first mask key element 21 It is less than 7% with the ratio between the first mask hole width Wm1 minimum value Wmm1.In such composition, and with first party In the section orthogonal to D1, the ratio between the minimum T1m of the first mask key element 21 and maximum T2M of the second mask key element 22 is More than 70%, also, the openings of the maximum T2M of the thickness of the second mask key element 22 and first 11a the second mask hole width Wm2 The ratio between minimum value Wmm2 be more than 41%.Thereby, it is possible to obtain and above-mentioned (1) and (2) identical effect.

Can also be, in the section orthogonal with first direction D1, first in the section orthogonal with second direction D2 The ratio between the maximum T2M of the thickness of mask key element 21 and the first spacing P1 are less than 6%.In such composition, with In section orthogonal one direction D1, and the minimum T1m of the first mask key element 21 and maximum T2M of the second mask key element 22 The ratio between be more than 70%, also, the maximum T2M of the thickness of the second mask key element 22 with first be open 11a the second mask hole The ratio between width Wm2 minimum value Wmm2 is more than 41%.Thereby, it is possible to obtain imitating with above-mentioned (1) and (2) identical Fruit.

Can also be, in the section orthogonal with first direction D1, the minimum T1m of the thickness of the first mask key element 21 Less than 12.5 μm.In such composition, and in the section orthogonal with first direction D1, the first mask key element 21 The ratio between minimum T1m and the maximum T2M of the second mask key element 22 are more than 70%, also, the thickness of the second mask key element 22 The openings of maximum T2M and first 11a the ratio between the second mask hole width Wm2 minimum value Wmm2 be more than 41%.By This, can obtain and above-mentioned (1) and (2) identical effect.

The process for forming the second hole key element 11d for forming mask hole 11, is not limited to use the second Resist patterns 35 Simultaneously formed flex point key element dp3 be connected the first arcuation key element dp1 and the second arcuation key element dp2 process, can also by with Under process form.For example, in the process for forming the second hole key element 11d, first, first arc is clipped being used in be formed Shape key element dp1 2 the second arcuation key element dp2 Resist patterns is positioned at after metal mask base material 31, anti-using this Erosion agent pattern is etched to metal mask base material 31.Then, will Resist patterns used in etching from metal mask After being peeled off with base material 31, it is used in form the first arcuation key element dp1 Resist patterns and be positioned at metal mask base material 31, Metal mask base material 31 is etched using the Resist patterns.Thereby, it is possible to form the second hole key element 11d.It is in this way, logical Cross and the formation of Resist patterns and metal mask are repeated twice with the etching of base material 31, will thus, it is possible to form the second hole Plain 11d.

Form the second hole key element 11d of mask hole 11, additionally it is possible to by by the formation of Resist patterns and metal mask More than 3 times are repeated with the etching of base material 31 to be formed.For example, structure can be formed using respectively different Resist patterns Into second hole key element 11d a first arcuation key element dp1 and 2 the second arcuation key element dp2 it is respective.In the situation Under, by the way that the formation of Resist patterns and metal mask are repeated more than 3 times with the etching of base material 31, thus, it is possible to be formed Second hole key element 11d.

The thickness of metal mask base material 31 can be thinner than 20 μm, for example, can be more than 10 μm, less than 20 μm. Using such metal mask with base material 31 in the case of, only by being lost from the second face 31b to metal mask with base material 31 Carve, it becomes possible to form the mask hole with desired shape.In addition, the metal of the thickness with more than 10 μm, less than 20 μm Mask base material 31, it is the evaporation in manufacture than that can be formed by the metal mask of the thickness with more than 20 μm with base material 31 With the preferred base material of aspect of the evaporation metal mask 10 of the higher precision of metal mask 10.

In the case where metal mask as use is with base material 31, system that can be from above-mentioned evaporation with metal mask 10 Make in method, be omitted in metal mask with the process that the first resist layer 32 is formed on the first face 31a of base material 31 and from The process that one resist layer 32 forms the first Resist patterns 34.In addition, in this case, additionally it is possible to omit against corrosion using first The process that agent pattern 34 is etched to metal mask base material 31, thus, additionally it is possible to omit the work for forming the second protective layer 36 Sequence and the process for forming the first protective layer 37.

In this way, in the case of using the metal mask of the thickness with more than 10 μm, less than 20 μm with base material 31, pass through By following process, evaporation metal mask 10 can be obtained.That is, the second face 31b in metal mask with base material 31 is passed through Resist layer is formed, Resist patterns is formed from resist layer and metal mask is carried out with base material using Resist patterns Etching, thus, it is possible to manufacture evaporation metal mask 10.In addition it is also possible to it is to be processed as steaming by metal mask base material 31 The midway of plating metal mask 10, by for supporting metal mask to be pasted on metal mask base material with the support member of base material 31 31。

In the evaporation that process as process manufactures with metal mask 10, in the section orthogonal with first direction D1, Second mask hole width of the second opening is maximum, and the second mask hole width of the first opening is minimum.Moreover, the second mask hole width Tapered into from the second opening towards the first opening.Therefore, the maximum T2M of the thickness of the second mask key element 22 and The ratio between second mask hole width of one opening is more than 41%.

Evaporation is not limited to the evaporation metal mask that is used in the manufacture of organic el display with metal mask, Can be the evaporation metal mask used in the manufacture of other display devices, the shape connected up in various device possesseds The evaporation metal mask used into the evaporation of, various device possessed functional layers etc..

Claims

1. a kind of evaporation metal mask, possess along a first direction and the second direction orthogonal with above-mentioned first direction arranges Multiple mask holes, wherein,

Above-mentioned evaporation metal mask possesses the first face and the second face,

Each aforementioned mask hole is with the first opening in the upper shed of above-mentioned first face and second in the upper shed of above-mentioned second face Opening,

The key element of the above-mentioned evaporation metal mask divided to each aforementioned mask hole, by mutually right on above-mentioned first direction 2 the first mask key elements put and mutually opposing 2 the second mask key elements in above-mentioned second direction are formed,

Above-mentioned first mask key element and aforementioned mask hole are along each ground alternate repetition of above-mentioned first direction, also, above-mentioned the Two mask key elements and aforementioned mask hole along each ground alternate repetition of above-mentioned second direction,

The width that above-mentioned first mask key element has along above-mentioned first direction, less than above-mentioned second mask key element along above-mentioned The width that two directions have,

In the section orthogonal with above-mentioned first direction, the minimum of the thickness of above-mentioned first mask key element and above-mentioned second mask The ratio between maximum of thickness of key element is more than 70%,

In each aforementioned mask hole, the width in the aforementioned mask hole in the section orthogonal with above-mentioned first direction is wide for mask hole Degree, it is less than the aforementioned mask hole width in above-mentioned second opening in the aforementioned mask hole width of above-mentioned first opening,

The above-mentioned maximum of the thickness of above-mentioned second mask key element and from above-mentioned first opening to above-mentioned second opening it is upper The ratio between minimum value of mask hole width is stated as more than 41%.

2. evaporation metal mask as claimed in claim 1, wherein,

Multiple aforementioned mask holes are arranged along above-mentioned first direction with certain spacing,

The maximum value of the thickness of above-mentioned first mask key element in the section orthogonal with above-mentioned second direction and above-mentioned spacing it Than for more than 6%.

3. evaporation metal mask as claimed in claim 1, wherein,

In aforementioned mask hole, aforementioned mask hole width is wide along mask hole width i.e. the second mask hole of above-mentioned second direction Spend, the width in the aforementioned mask hole in the section orthogonal with above-mentioned second direction is the mask hole width along above-mentioned first direction That is the first mask hole width, it is less than in the above-mentioned first mask hole width of above-mentioned first opening in the upper of above-mentioned second opening The first mask hole width is stated,

The maximum of the thickness of above-mentioned first mask key element and from the above-mentioned first opening to above-mentioned the above-mentioned second opening The ratio between minimum value of one mask hole width is more than 7%.

4. the evaporation metal mask as described in any one of claims 1 to 3, wherein,

From the direction orthogonal from the direction extended with above-mentioned evaporation with metal mask, multiple aforementioned mask holes are arranged as alternate matrix Column-shaped.