WO2017179677A1 - Vapor deposition metal mask - Google Patents
Vapor deposition metal mask Download PDFInfo
- Publication number
- WO2017179677A1 WO2017179677A1 PCT/JP2017/015202 JP2017015202W WO2017179677A1 WO 2017179677 A1 WO2017179677 A1 WO 2017179677A1 JP 2017015202 W JP2017015202 W JP 2017015202W WO 2017179677 A1 WO2017179677 A1 WO 2017179677A1
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- WO
- WIPO (PCT)
- Prior art keywords
- mask
- vapor deposition
- metal mask
- along
- metal
- Prior art date
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- 239000002184 metal Substances 0.000 title claims abstract description 287
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 168
- 230000008021 deposition Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 description 77
- 230000000052 comparative effect Effects 0.000 description 48
- 239000010410 layer Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 29
- 238000005530 etching Methods 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 239000012044 organic layer Substances 0.000 description 16
- 229910001374 Invar Inorganic materials 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 14
- 239000011241 protective layer Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 239000012141 concentrate Substances 0.000 description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000638 solvent extraction Methods 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
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- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Definitions
- the present invention relates to a metal mask for vapor deposition.
- An organic EL display is known as one of display devices manufactured using a vapor deposition method.
- the organic layer provided in the organic EL display is a deposit of organic molecules sublimated in the vapor deposition process.
- the metal mask used in the vapor deposition process has a plurality of mask holes, and each mask hole is a passage through which sublimated organic molecules pass.
- each mask hole penetrates the metal mask along the thickness direction.
- each mask hole defines a rectangular region, and the plurality of mask holes are arranged in, for example, a staggered arrangement (see, for example, Patent Document 1).
- the width between adjacent mask holes may have different sizes in the extending direction of the mask holes and in the direction intersecting with the extending direction.
- a relatively small portion in the width between the mask holes is a weak portion having a lower strength than other portions in the metal mask.
- a metal mask having a thickness of less than 1 mm when such fragile portions and mask holes are alternately repeated one by one along one direction, a continuous fold occurs along the direction in which the fragile portions are arranged in the metal mask. There is a case.
- metal mask for vapor deposition used for the manufacture of display devices including organic EL displays, but also the metal for vapor deposition used for vapor deposition of functional layers provided for various devices and the formation of wiring provided for various devices. It is common to masks. In addition, such a matter also applies to a metal mask in which a plurality of mask holes are arranged in a lattice shape in a plan view facing one surface where a plurality of mask holes are opened, or a configuration in which each mask hole has a substantially square shape. It is common.
- An object of this invention is to provide the metal mask for vapor deposition which enabled it to suppress the fold which continues along the direction where a mask hole is located in a line.
- the metal mask for vapor deposition for solving the above-mentioned problem is a metal mask for vapor deposition provided with a plurality of mask holes arranged along a first direction and a second direction orthogonal to the first direction.
- the metal mask for vapor deposition includes a first surface and a second surface, and each mask hole has a first opening opened in the first surface and a second opening opened in the second surface.
- the element of the metal mask for vapor deposition that defines each mask hole is composed of two first mask elements facing each other in the first direction and two second mask elements facing each other in the second direction. The The first mask element and the mask hole are alternately repeated one by one along the first direction, and the second mask element and the mask hole are one along the second direction. Repeated alternately.
- the width of the first mask element along the first direction is smaller than the width of the second mask element along the second direction.
- the ratio of the minimum value in the thickness of the first mask element to the maximum value in the thickness of the second mask element is 70% or more.
- the width of the mask hole in a cross section orthogonal to the first direction is the mask hole width, and the mask hole width in the first opening is larger than the mask hole width in the second opening. Is also small.
- the ratio of the maximum value in the thickness of the second mask element to the minimum value of the mask hole width between the first opening and the second opening is 41% or more.
- the difference between the maximum value in the thickness of the second mask element and the minimum value in the thickness of the first mask element is smaller than 30%. Variations in thickness within the metal mask for vapor deposition can be suppressed. Therefore, the difference in strength between the portion where the first mask elements are continuous and the other portions in the metal mask for vapor deposition can be suppressed to such an extent that the occurrence of folding in the portions where the first mask elements are continuous is suppressed.
- the length of the first mask element along the second direction increases as the mask hole width increases.
- the thickness of the first mask element is roughly determined by the maximum value in the thickness of the second mask element sandwiching the first mask element in the second direction, and the thickness of the first mask element increases as the maximum value increases. growing.
- the strength of each first mask element is the metal mask for vapor deposition.
- the size is such that the folding does not concentrate on the first mask element.
- the plurality of mask holes are arranged at a constant pitch along the first direction, a ratio of the maximum value to the pitch is 6% or more, and the maximum value is the second direction. It is preferable that the maximum value in the thickness of the first mask element in a cross section orthogonal to the first mask element.
- the pitch along the first direction is the minimum unit of the elements constituting the metal mask for vapor deposition, that is, the first mask element and the space.
- the first mask element is a portion that is maintained at a predetermined size regardless of the size of the organic layer formed by the metal mask for vapor deposition.
- the size of the first mask element is determined by, for example, the size of a peripheral circuit and the like, and is a portion that is the minimum size in order to increase the light emission efficiency in the organic EL display.
- the space included in the pitch is a portion whose size changes depending on the resolution required for the organic EL display.
- the maximum value in the thickness of the first mask element is not less than a predetermined value. Maintained. Therefore, generation
- the mask hole width is a second mask hole width that is a mask hole width along the second direction, and the width of the mask hole in a cross section orthogonal to the second direction is the first direction.
- the first mask hole width at the first opening is smaller than the first mask hole width at the second opening, and from the first opening.
- the ratio of the maximum value in the thickness of the first mask element to the minimum value of the first mask hole width until the second opening is preferably 7% or more.
- the strength of the mask is increased.
- the ratio of the maximum value in the thickness of the first mask element to the minimum value of the first mask hole width is 7% or more, the strength of each first mask element is for deposition.
- the size is such that the folding is not more concentrated on the first mask element.
- the plurality of mask holes may be arranged in a staggered arrangement when viewed from a direction orthogonal to the direction in which the vapor deposition metal mask spreads.
- the metal mask for vapor deposition in which a plurality of mask holes are arranged in a staggered arrangement, it is possible to suppress the continuous folding along the direction in which the mask holes are arranged.
- the fragmentary perspective view which shows the partial perspective structure in one Embodiment which actualized the metal mask for vapor deposition of this invention.
- the partial top view which shows the partial planar structure of the metal mask for vapor deposition in the planar view facing 1st surface.
- the fragmentary sectional view which shows typically a part of cross section orthogonal to a 1st direction.
- the fragmentary sectional view which shows typically a part of cross section orthogonal to a 1st direction.
- the fragmentary sectional view which shows typically a part of cross section orthogonal to a 2nd direction.
- Process drawing for demonstrating the patterning process of the resist layer in the manufacturing method of the metal mask for vapor deposition The partial top view which shows the partial planar structure of the resist pattern in the planar view facing the 1st surface of the base material for metal masks.
- the partial top view which shows the partial planar structure of the resist pattern in the planar view facing the 2nd surface of the base material for metal masks.
- Example 5 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to a first direction in Example 1 to Example 3.
- the fragmentary sectional view which shows typically a part of cross section orthogonal to the 1st direction in the comparative examples 1, 3, and 5.
- FIG. The fragmentary sectional view which shows typically a part of cross section orthogonal to the 1st direction in the comparative examples 2, 4, and 6.
- FIG. The top view which shows the planar structure seen from the direction which opposes the 1st surface in the metal mask for vapor deposition of a modification.
- the metal mask for vapor deposition As an embodiment embodying the metal mask for vapor deposition according to the present invention will be described. Below, the structure of the metal mask for vapor deposition, the manufacturing method of the metal mask for vapor deposition, and an Example are demonstrated in order. In addition, the metal mask for vapor deposition demonstrated below is a metal mask for vapor deposition used for manufacture of an organic electroluminescent display provided with a some organic layer.
- the vapor deposition metal mask 10 includes a first surface 10a and a second surface 10b.
- the metal mask for vapor deposition 10 has a plate shape extending along the first direction D1 and having a predetermined width along a second direction D2 orthogonal to the first direction D1.
- the deposition metal mask 10 includes a plurality of mask holes 11 arranged along the first direction D1 and the second direction D2. When viewed from the direction facing the first surface 10a, the first surface 10a is partitioned into a mask region R1 in which a plurality of mask holes 11 are formed and a peripheral region R2 surrounding the mask region R1. .
- the mask region R1 is a region that has been processed to form a plurality of mask holes 11, and the peripheral region R2 is a region that has not been processed.
- a plurality of mask regions R1 may be defined on the first surface 10a at predetermined intervals along the first direction D1, or at predetermined intervals along each of the first direction D1 and the second direction D2.
- a plurality of mask regions R1 may be partitioned at intervals.
- the metal mask 10 for vapor deposition is made of metal and is preferably made of Invar.
- the material for forming the vapor deposition metal mask 10 may be a metal other than Invar.
- the thickness T in the peripheral region R2 is preferably 20 ⁇ m or more and 50 ⁇ m or less, for example.
- FIG. 2 shows a planar structure of the vapor deposition metal mask 10 as viewed from the direction facing the first surface 10a.
- the elements of the metal mask for vapor deposition 10 that define each mask hole 11 include two first mask elements 21 that face each other in the first direction D ⁇ b> 1 and the second direction. It is comprised from the 2nd 2nd mask element 22 which mutually opposes in D2.
- the first mask elements 21 and the mask holes 11 are alternately repeated one by one along the first direction D1, and the second mask elements 22 and the mask holes 11 are second. It is repeated alternately one by one along the direction D2.
- the width of the first mask element 21 along the first direction D1 is the first width W1
- the width of the second mask element 22 along the second direction D2 is the second width W2.
- the first width W1 of the first mask element 21 is smaller than the second width W2 of the second mask element 22.
- the metal mask for vapor deposition 10 extends along a plane defined by the first direction D1 and the second direction D2, and the plurality of mask holes 11 are staggered when viewed from a direction orthogonal to the direction in which the metal mask for vapor deposition 10 spreads. Are lined up. In other words, when viewed from the direction facing the first surface 10a, the plurality of mask holes 11 are arranged in a staggered arrangement.
- each mask hole 11 defines a rectangular region, and the width of each mask hole 11 along the first direction D1 is that the mask hole 11 extends in the second direction D2. Greater than the width you have along.
- the plurality of mask holes 11 are arranged at a constant first pitch P1 along the first direction D1.
- the plurality of mask holes 11 arranged along the first direction D ⁇ b> 1 constitute one row.
- the positions in the first direction D1 overlap each other.
- the position in one direction D1 is shifted by 1 ⁇ 2 pitch.
- the mask holes 11 whose positions in the first direction D1 overlap are arranged at a constant second pitch P2 along the second direction D2.
- the second pitch P2 is a value equal to the first pitch P1.
- the first pitch P1 and the second pitch P2 are generally equal to each other following the pixel shape.
- one first mask element 21 located between two mask holes 11 adjacent in the first direction D1 is used for vapor deposition that partitions each of the two mask holes 11. It functions as an element of the metal mask 10.
- a part of the metal mask for vapor deposition 10 functioning as the second mask element 22 for one mask hole 11 and the other mask hole. 11 and a part of the portion functioning as the second mask element 22 with respect to 11 overlap each other.
- the positional deviation in the first direction D1 of the mask holes 11 may be smaller than 1 ⁇ 2 pitch in the rows adjacent to each other in the second direction D2. However, it may be larger than 1/2 pitch. Moreover, in each mask hole 11, the width
- FIG. 3 shows a cross-sectional structure orthogonal to the first direction D1 in the metal mask for vapor deposition 10, and a cross-sectional structure passing through the center of the first mask element 21 in the first direction D1.
- FIG. 3 shows a cross-sectional structure taken along the line II of FIG.
- the thickness of the first mask element 21 has a minimum value T1m, and the thickness of the second mask element 22 has a maximum value T2M. .
- the minimum value T1m in the thickness of the first mask element 21 is 12.5 ⁇ m or more.
- the ratio of the minimum value T1m in the thickness of the first mask element 21 to the maximum value T2M in the thickness of the second mask element 22 is 70% or more. That is, the minimum value T1m in the thickness of the first mask element 21 and the maximum value T2M in the thickness of the second mask element 22 satisfy the following expression (1). T1m / T2M ⁇ 100 ⁇ 70 (1)
- the thickness of the first mask element 21 is ensured to be 12.5 ⁇ m or more in the cross section orthogonal to the first direction D1. Therefore, there is a difference in strength between the continuous portion of the first mask element 21 and the other portion in the metal mask for vapor deposition 10 to such an extent that the folding of the continuous portion of the first mask element 21 is suppressed. More suppressed.
- the thickness in the deposition metal mask 10 is set so that the difference between the maximum value T2M in the thickness of the second mask element 22 and the minimum value T1m in the thickness of the first mask element 21 is smaller than 30%. Variation in length is suppressed.
- the vapor deposition metal mask 10 there is a difference in strength between the portion where the first mask element 21 is continuous and the other portion in the metal mask for vapor deposition 10 to such an extent that folding is suppressed at the portion where the first mask element 21 is continuous. It can be suppressed. As a result, it is possible to suppress the folding metal mask 10 from being bent along the direction in which the mask holes 11 are arranged, in particular, the folding along the direction in which the first mask elements 21 are arranged.
- Each mask hole 11 has the 1st opening 11a opened to the 1st surface 10a, and the 2nd opening 11b opened to the 2nd surface 10b.
- Each mask hole 11 includes a first hole element 11c including a first opening 11a and a second hole element 11d including a second opening 11b.
- the first hole element 11c and the second hole element 11d are formed by vapor deposition.
- the metal mask 10 is continuous in the thickness direction. A portion where the first hole element 11c and the second hole element 11d are continuous is a continuous element 11e.
- the width of the mask hole 11 in the cross section orthogonal to the first direction D1, and the width of the mask hole 11 along the second direction D2 is the second mask hole width Wm2.
- the second mask hole width Wm2 at the first opening 11a is smaller than the second mask hole width Wm2 at the second opening 11b.
- the second mask hole width Wm2 in the first hole element 11c is the largest in the first opening 11a and gradually decreases toward the continuous element 11e
- the second mask hole width Wm2 in the second hole element 11d is the second opening 11b. And gradually decreases toward the continuous element 11e. That is, in each mask hole 11, the second mask hole width Wm2 in the continuous element 11e is the smallest.
- the length along the thickness direction of the vapor deposition metal mask 10 in the first hole element 11c is smaller than the length along the thickness direction of the vapor deposition metal mask 10 in the second hole element 11d.
- the ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 is 41% or more. That is, the minimum value Wmm2 of the second mask hole width Wm2 and the maximum value T2M in the thickness of the second mask element 22 satisfy the following expression (2). T2M / Wmm2 ⁇ 100 ⁇ 41 (2)
- the length of the first mask element 21 along the second direction D2 increases as the second mask hole width Wm2 increases.
- the thickness of the first mask element 21 is roughly determined by the maximum value T2M in the thickness of the second mask element 22 sandwiching the first mask element 21 in the second direction D2, and the larger the maximum value T2M, the first The thickness of the mask element 21 is increased.
- each first mask The strength of the element 21 is such that the folding does not concentrate on the first mask element 21 as compared with other portions of the metal mask 10 for vapor deposition.
- the surface defining the second hole element 11d is the second inner peripheral surface 11dp, and in the cross section orthogonal to the first direction D1, the second inner peripheral surface 11dp includes the first arc-shaped element dp1, A second arc-shaped element dp2 and an inflection element dp3 are included.
- the two first arc-shaped elements dp1 are opposed in the second direction D2
- the two second arc-shaped elements dp2 are opposed in the second direction D2
- the two inflection elements dp3 are the first Opposing in the two directions D2.
- the first arc-shaped element dp1 includes a continuous element 11e
- the second arc-shaped element dp2 includes a second opening 11b.
- the radius of curvature of the first arc-shaped element dp1 and the radius of curvature of the second arc-shaped element dp2 are different from each other, and the radius of curvature of the first arc-shaped element dp1 is larger than the radius of curvature of the second arc-shaped element dp2.
- the inflection element dp3 is a part where the first arc-shaped element dp1 and the second arc-shaped element dp2 are connected.
- Each of the first arc-shaped element dp1 and the second arc-shaped element dp2 has a curvature such that the center of the curvature of each arc-shaped element is located outside the deposition metal mask 10.
- the surface defining the first hole element 11c is the first inner peripheral surface 11cp, and the first inner peripheral surface 11cp includes a first opening 11a and a continuous element 11e in a cross section orthogonal to the first direction D1. It has an arcuate element cp1.
- the two first arc-shaped elements cp1 face each other in the second direction D2.
- the first arc-shaped element cp ⁇ b> 1 has a curvature such that the center of curvature of the first arc-shaped element cp ⁇ b> 1 is located outside the deposition metal mask 10.
- FIG. 5 shows a structure of a cross section perpendicular to the second direction D2 in the metal mask 10 for vapor deposition and passing through the center of the first mask element 21 in the second direction D2.
- FIG. 5 shows a cross-sectional structure taken along line II-II in FIG.
- the first mask element 21 has a maximum value T1M.
- the ratio of the maximum value T1M in the thickness of the first mask element 21 to the first pitch P1 along the first direction D1 described above is 6% or more. That is, the first pitch P1 along the first direction D1 and the maximum value T1M of the first mask element 21 satisfy the following expression (3).
- the first pitch P1 along the first direction D1 is a minimum unit of the elements constituting the metal mask for vapor deposition 10, that is, the first mask element 21 and the space.
- the 1st mask element 21 is a part maintained by the predetermined
- the size of the first mask element 21 is determined by, for example, the size of a peripheral circuit or the like, and is a portion that is set to a minimum size in order to increase the light emission efficiency in the organic EL display.
- the space included in the first pitch P1 is a portion whose size changes depending on the resolution required for the organic EL display.
- the thickness of the first mask element 21 changes.
- the maximum value T1M is maintained at a predetermined value or more. Therefore, the generation
- the first mask element 21 has a substantially pentagonal shape. Therefore, the first mask element 21 has a maximum value T1M in thickness at the vertex having the largest distance from the side along the first surface 10a.
- the width of the mask hole 11 in the cross section orthogonal to the second direction D2, and the width of the mask hole 11 along the first direction D1 is the first mask hole width Wm1.
- the first mask hole width Wm1 at the first opening 11a is smaller than the first mask hole width Wm1 at the second opening 11b.
- the first mask hole width Wm1 has a minimum value Wmm1 in the middle of the direction from the first opening 11a to the second opening 11b.
- the ratio of the maximum value T1M in the thickness of the first mask element 21 to the minimum value Wmm1 of the first mask hole width Wm1 is 7% or more. That is, the minimum value Wmm1 of the first mask hole width Wm1 and the maximum value T1M in the thickness of the first mask element 21 satisfy the following expression (4).
- each first mask element 21 Compared to other portions of the metal mask for vapor deposition 10, the strength of the folds is such that the folding is not concentrated on the first mask element 21.
- formation of the organic layer with respect to the film-forming object using such a metal mask 10 for vapor deposition is performed as follows.
- the 1st direction D1 and the 2nd direction D2 in the metal mask 10 for vapor deposition are demonstrated corresponding to the 1st direction D1 and the 2nd direction D2 in the film-forming object after film-forming.
- a blue organic layer is formed on a film formation target using the vapor deposition metal mask 10.
- the green organic layer is disposed in a portion between the blue organic layer in the second direction D2 and adjacent to one blue organic layer in the second direction D2.
- the red organic layer is formed so as to be aligned along the first direction D1.
- a blue organic layer is formed on the film formation target using the vapor deposition metal mask 10.
- the green organic layer is disposed in a portion between the blue organic layer in the second direction D2 and adjacent to one blue organic layer in the second direction D2.
- the red organic layer is formed so as to be aligned along the second direction D2.
- FIGS. 6 to 11 show a cross-sectional structure corresponding to a cross section taken along the line II of FIG. 2 and corresponding to each manufacturing process.
- a metal mask base material 31 for forming the metal mask for vapor deposition 10 is prepared.
- the metal mask base material 31 is preferably made of Invar, and the thickness of the metal mask base material 31 is preferably 20 ⁇ m or more and 50 ⁇ m or less, for example.
- the base material 31 for metal mask has the 1st surface 31a and the 2nd surface 31b which is a surface on the opposite side to the 1st surface 31a.
- the first surface 31 a of the metal mask substrate 31 corresponds to the first surface 10 a of the vapor deposition metal mask 10
- the second surface 31 b of the metal mask substrate 31 is the second surface 10 b of the vapor deposition metal mask 10. It corresponds to.
- the first resist layer 32 is formed on the first surface 31a of the metal mask base material 31, and the second resist layer 33 is formed on the second surface 31b.
- Each resist layer may be formed on the metal mask substrate 31 by applying a dry film resist, or may be formed by applying a coating liquid containing a resist layer forming material on the surface.
- the material for forming the resist layer is preferably a negative resist material, but may be a positive resist material.
- a first resist pattern 34 is formed by removing a part of the first resist layer 32 from the first surface 31 a of the metal mask base material 31. Further, a part of the second resist layer 33 is removed from the second surface 31 b of the metal mask base material 31, thereby forming the second resist pattern 35.
- each resist pattern if it is a negative resist layer, only the portion of the resist layer that remains on the metal mask substrate 31 as a resist pattern is exposed. Then, the exposed resist layer is developed. In the case of a positive resist layer, only the portion of the resist layer that is removed from the metal mask base material 31 may be exposed.
- the exposure of the first resist layer 32 and the exposure of the second resist layer 33 may be performed simultaneously or individually.
- the development of the first resist layer 32 and the development of the second resist layer 33 may be performed simultaneously or individually.
- the first resist pattern 34 has a plurality of first pattern elements 34a and a plurality of second pattern elements 34b.
- the first resist pattern 34 is a resist pattern for forming the first hole elements 11 c in the plurality of mask holes 11 on the metal mask base material 31.
- each 1st pattern element 34a is a pattern element for dividing the 1st mask element 21 in the base material 31 for metal masks
- each 2nd pattern element 34b is 2nd on the base material 31 for metal masks. It is a pattern element for partitioning the mask element 22.
- the second resist pattern 35 has a plurality of first pattern elements 35a and a plurality of second pattern elements 35b.
- the second resist pattern 35 is a resist pattern for forming the second hole element 11 d in the plurality of mask holes 11 on the metal mask substrate 31.
- each first pattern element 35a is a pattern element for partitioning the first mask element 21 on the metal mask substrate 31, and each second pattern element 35b is a metal mask base. This is a pattern element for dividing the second mask element 22 into the material 31.
- FIG. 8 shows a planar structure of the first resist pattern 34 in a plan view facing the first surface 31a of the metal mask base material 31. As shown in FIG. In FIG. 8, dots are added to the first resist pattern 34 for the sake of convenience in understanding the shape of the first resist pattern 34.
- the first pattern element 34a extends along the second direction D2 and is constant along the first direction D1. They are lined up at intervals. In the first direction D1, the repeated pitch of the first pattern elements 34a is substantially equal to the repeated pitch of the first mask elements 21 along the first direction D1 in the deposition metal mask 10.
- the second pattern element 34b extends along the first direction D1, and the two second pattern elements 34b adjacent in the second direction D2 are spaced apart from each other by the length of the first pattern element 34a. Yes.
- the width W34a of the first pattern element 34a along the first direction D1 is smaller than the width W34b of the second pattern element 34b along the second direction D2.
- FIG. 9 shows a planar structure of the second resist pattern 35 in a plan view facing the second surface 31b of the metal mask base material 31.
- FIG. 9 dots are added to the second resist pattern 35 for the sake of convenience in understanding the shape of the second resist pattern 35.
- the first pattern elements 35a extend along the second direction D2, and are spaced apart along the first direction D1. Are lined up. In the first direction D1, the repeated pitch of the first pattern elements 35a is substantially equal to the repeated pitch of the first mask elements 21 along the first direction D1 in the vapor deposition metal mask 10.
- the second pattern element 35b extends along the first direction D1, and the two second pattern elements 35b adjacent in the second direction D2 are spaced apart from each other by the length of the first pattern element 35a. Yes.
- the second pattern element 35b has a gap 35c extending along the first direction D1, and the gap 35c is located at the center of the second direction D2 in each second pattern element 35b.
- the width W35c of the gap 35c along the second direction D2 is greater than the distance between the two second pattern elements 35b in the second direction D2, that is, the width W35a2 of the first pattern element 35a along the second direction D2. Is also small. Further, the width W35a1 of the first pattern element 35a along the first direction D1 is smaller than the width W35b of the second pattern element 35b along the second direction D2.
- the first pattern element 35a is located between the second pattern elements 35b adjacent in the second direction D2, and is connected to the two second pattern elements 35b sandwiching the first pattern element 35a in the second direction D2. ing.
- the metal mask base material 31 is etched from the first surface 31 a using the first resist pattern 34.
- FIG. 10 shows a state of the metal mask base material 31 during the etching of the metal mask base material 31 from the first surface 31a.
- the metal mask substrate 31 is made of Invar, for example, ferric chloride solution can be used as the etching solution for the metal mask substrate 31.
- a second protective layer 36 is formed on the opposite surface.
- the second protective layer 36 is a layer for preventing the metal mask substrate 31 from being etched from the second surface 31b when the metal mask substrate 31 is etched from the first surface 31a.
- the material for forming the second protective layer 36 may be any material that is resistant to the etching solution of the metal mask substrate 31.
- the second protective layer 36 is peeled off from the second resist pattern 35 and the first resist 31a is removed from the first surface 31a of the metal mask substrate 31.
- the pattern 34 is peeled off.
- the metal mask base material 31 is etched from the second surface 31b using the second resist pattern 35.
- FIG. 11 shows the state of the metal mask base material 31 during the etching of the metal mask base material 31 from the second surface 31b.
- the metal mask substrate 31 is made of Invar, for example, ferric chloride solution can be used as the etching solution for the metal mask substrate 31.
- the first protective layer 37 is formed on the first surface 31a of the metal mask base material 31 before the etching of the metal mask base material 31 is started. Form.
- the first protective layer 37 is a layer for preventing the metal mask base material 31 from being etched from the first surface 31a when the metal mask base material 31 is etched from the second surface 31b.
- the formation material of the 1st protective layer 37 should just be the material which has the tolerance with respect to the etching solution of the base material 31 for metal masks.
- the first protective layer 37 is peeled off from the first surface 31a of the metal mask substrate 31, and the second resist pattern is removed from the second surface 31b. Remove 35. Thereby, the metal mask 10 for vapor deposition can be obtained.
- the metal mask base material 31 is located between the second pattern elements 35 b rather than the etching rate in the portion overlapping the gap 35 c of the second pattern element 35 b.
- the etching rate at the part is high.
- the metal mask base 31 a portion having a large etching amount and a portion having a small etching amount are formed on the metal mask base 31.
- the ratio of the minimum value T1m in the thickness of the first mask element 21 to the maximum value T2M in the thickness of the second mask element 22 is 70% or more, and
- the metal mask for vapor deposition 10 in which the ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the two mask hole widths Wm2 is 41% or more can be obtained.
- Example 1 to 3 the thicknesses of the metal mask base materials used for manufacturing the metal mask for vapor deposition of each example are different from each other.
- the ratio of the maximum value T1M to the minimum value Wmm1 of the mask hole width Wm1 is a substantially equal value between the examples. Therefore, the metal mask for vapor deposition of Example 1- Example 3 is demonstrated with reference to one figure for convenience.
- Comparative Examples 1, 3, and 5 the thicknesses of the metal mask base materials used for manufacturing the vapor deposition metal mask of each comparative example are different from each other.
- the ratio of the maximum value T1M to the minimum value Wmm1 of the mask hole width Wm1 is a substantially equal value among the comparative examples. Therefore, the metal mask for vapor deposition of Comparative Examples 1, 3, and 5 will be described with reference to one drawing for convenience.
- Comparative Examples 2, 4, and 6 the thicknesses of the metal mask base materials used for manufacturing the vapor deposition metal mask of each comparative example are different from each other.
- the ratio of the maximum value T1M to the minimum value Wmm1 of the mask hole width Wm1 is a substantially equal value among the comparative examples. Therefore, the metal mask for vapor deposition of Comparative Examples 2, 4, and 6 will be described with reference to one drawing for convenience.
- Example 1 A metal mask base material made of Invar and having a thickness of 30 ⁇ m was prepared. A negative resist film is attached to the first surface of the metal mask base material to form a first resist layer on the first surface of the metal mask base material, and the negative dry film resist is used for the metal mask. The 2nd resist layer was formed in the 2nd surface of the base material for metal masks by affixing on the 2nd surface of a base material.
- the first resist layer was patterned to form a first resist pattern having the following shape.
- the pitch of the first pattern elements along the first direction is 195 ⁇ m
- the length of the first pattern elements along the first direction is 30.0 ⁇ m
- the first pattern along the second direction The length of the pattern element was 33.5 ⁇ m.
- the length of the second pattern element along the second direction was 64.0 ⁇ m.
- the second resist layer was patterned to form a second resist pattern having the following shape.
- the pitch of the first pattern elements along the first direction is 195 ⁇ m
- the length of the first pattern elements along the first direction is 16.5 ⁇ m
- the first pattern along the second direction The length of the pattern element was 58.3 ⁇ m.
- the length of the second pattern element along the second direction was 39.1 ⁇ m
- the length of the gap of the second pattern element was 10.3 ⁇ m. That is, in each of the two portions of the second pattern element that are located with a gap along the second direction, the length along the second direction was 14.4 ⁇ m.
- the metal mask for metal of Example 1 was obtained by etching the base material for metal masks using ferric chloride liquid.
- the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 195 ⁇ m. there were.
- the thickness of the first mask element 21 has the minimum value T1m
- the thickness of the second mask element 22 has the maximum value T2M.
- the minimum value T1m was 12.5 ⁇ m and the maximum value T2M was 17.7 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 70.6%. Further, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.4%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 42.6 ⁇ m, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 41.5%.
- Example 1 As described above with reference to FIG. 5, it was recognized that the first mask element 21 had a substantially pentagonal shape in the cross section orthogonal to the second direction D2. Further, it was recognized that the first mask element 21 had a maximum value T1M, and the maximum value T1M was recognized to be 12.5 ⁇ m. As described above, since the first pitch P1 in which the plurality of mask holes are arranged along the first direction D1 is 195 ⁇ m, it is recognized that the ratio of the maximum value T1M to the first pitch P1 is 6.4%. It was.
- the minimum value Wmm1 of the first mask hole width Wm1 is 167.9 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 7.4%.
- Example 2 A metal mask base material made of Invar and having a thickness of 25 ⁇ m was prepared. Moreover, the metal mask for vapor deposition of Example 2 was obtained by the same method as Example 1 except having changed the dimension of the 1st resist pattern and the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 162. It was 5 ⁇ m.
- the pitch of the first pattern elements along the first direction is 162.5 ⁇ m
- the length of the first pattern elements along the first direction is 25 ⁇ m
- the first along the second direction was 27.9 ⁇ m
- the length of the second pattern element along the second direction was 53.3 ⁇ m.
- the pitch of the first pattern elements along the first direction is 162.5 ⁇ m, and the length of the first pattern elements along the first direction is 13.8 ⁇ m, along the second direction.
- the length of the first pattern element was 48.6 ⁇ m.
- the length of the second pattern element along the second direction was 32.6 ⁇ m, and the length of the gap of the second pattern element was 8.6 ⁇ m.
- the length along the second direction was 12.0 ⁇ m.
- the minimum value T1m in the thickness of the first mask element 21 is 10.4 ⁇ m in the cross section orthogonal to the first direction D1, and the second mask It was found that the maximum value T2M in the thickness of the element 22 was 14.8 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 70.3%. Further, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.4%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 35.8 ⁇ m, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 41.3%.
- the maximum value T1M in the thickness of the first mask element 21 was 10.4 ⁇ m in the cross section orthogonal to the second direction D2. Since the first pitch P1 in which the plurality of mask holes 11 are arranged along the first direction D1 is 162.5 ⁇ m, it was recognized that the ratio of the maximum value T1M to the first pitch P1 was 6.4%.
- the minimum value Wmm1 of the first mask hole width Wm1 is 139.0 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 7.5%.
- Example 3 A metal mask base material made of Invar and having a thickness of 20 ⁇ m was prepared. Moreover, the metal mask for vapor deposition of Example 3 was obtained by the same method as Example 1 except having changed the dimension of the 1st resist pattern and the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 130 ⁇ m. there were.
- the pitch of the first pattern elements along the first direction is 130 ⁇ m
- the length of the first pattern elements along the first direction is 20 ⁇ m
- the first pattern elements along the second direction The length of was 22.3 ⁇ m.
- the length of the second pattern element along the second direction was 42.7 ⁇ m.
- the pitch of the first pattern elements along the first direction is 130 ⁇ m
- the length of the first pattern elements along the first direction is 11 ⁇ m
- the first pattern elements along the second direction was 38.9 ⁇ m in length.
- the length of the second pattern element along the second direction was 26.1 ⁇ m
- the length of the gap of the second pattern element was 6.9 ⁇ m.
- the length along the second direction was 9.6 ⁇ m.
- the minimum value T1m in the thickness of the first mask element 21 is 8.8 ⁇ m in the cross section orthogonal to the first direction D1, and the second mask It was found that the maximum value T2M in the thickness of the element 22 was 11.9 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 73.9%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.8%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 28.4 ⁇ m, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 41.9%.
- the maximum value T1M in the thickness of the first mask element 21 was 8.8 ⁇ m in the cross section orthogonal to the second direction D2. Since the first pitch P1 in which the plurality of mask holes 11 are arranged along the first direction D1 is 130 ⁇ m, it was recognized that the ratio of the maximum value T2M to the first pitch P1 was 6.8%.
- the minimum value Wmm1 of the first mask hole width Wm1 is 112.2 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 7.8%.
- Comparative Example 1 A metal mask base material made of Invar and having a thickness of 30 ⁇ m was prepared. In addition, except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows, and the second resist pattern having a pattern element having no gap as the second pattern element was formed.
- the metal mask for vapor deposition of the comparative example 1 was obtained by the same method as Example 1. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 195 ⁇ m. there were.
- the pitch of the first pattern elements along the first direction is 195 ⁇ m
- the length of the first pattern elements along the first direction is 27.9 ⁇ m
- the first pattern along the second direction The length of the pattern element was 36.6 ⁇ m.
- the length of the second pattern element along the second direction was 60.9 ⁇ m.
- the pitch of the first pattern elements along the first direction is 195 ⁇ m
- the length of the first pattern elements along the first direction is 5.2 ⁇ m
- the first along the second direction The length of the pattern element was 76.9 ⁇ m.
- the length of the second pattern element along the second direction was 20.6 ⁇ m.
- the thickness of the first mask element 41 has the minimum value T1m in the cross section orthogonal to the first direction D1, and the second mask element. It was observed that the thickness of 42 had a maximum value T2M, a minimum value T1m of 9.7 ⁇ m, and a maximum value T2M of 20.8 ⁇ m. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 46.6%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.0%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 42.3 ⁇ m, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 49.2%.
- Example 1 As in Example 1, it was confirmed that the first mask element 41 had a substantially pentagonal shape in the cross section orthogonal to the second direction D2. Further, it was recognized that the first mask element 41 had a maximum value T1M, and the maximum value T1M was recognized to be 9.7 ⁇ m. As described above, since the first pitch P1 in which the plurality of mask holes are arranged along the first direction D1 is 195 ⁇ m, it is recognized that the ratio of the maximum value T1M to the first pitch P1 is 5.0%. It was.
- the minimum value Wmm1 of the first mask hole width Wm1 is 165.9 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 5.8%.
- Comparative Example 2 A metal mask base material made of Invar and having a thickness of 30 ⁇ m was prepared. Moreover, the metal mask for vapor deposition of the comparative example 2 was obtained by the same method as Example 1 except having changed the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 195 ⁇ m. there were.
- the pitch of the first pattern elements along the first direction is 195 ⁇ m, and the length of the first pattern elements along the first direction is 16.5 ⁇ m, along the second direction.
- the length of the first pattern element was 58.3 ⁇ m.
- the length of the second pattern element along the second direction was 39.2 ⁇ m, and the length of the gap of the second pattern element was 14.4 ⁇ m. That is, in each of the two portions of the second pattern element that are located with a gap along the second direction, the length along the second direction is 12.4 ⁇ m.
- the thickness of the first mask element 51 has the minimum value T1m in the cross section orthogonal to the first direction D1, and the second mask element. It was found that the thickness of 52 had a maximum value T2M, the minimum value T1m was 10.4 ⁇ m, and the maximum value T2M was 12.7 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 81.9%. Furthermore, it was recognized that the ratio of the minimum value T1m to the second pitch P2 was 5.3%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 42.6 ⁇ m, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 29.8%.
- Example 2 As in Example 1, it was confirmed that the first mask element 51 had a substantially pentagonal shape in the cross section orthogonal to the second direction D2. Further, it was recognized that the first mask element 51 had a maximum value T1M, and the maximum value T1M was recognized to be 10.4 ⁇ m. As described above, since the first pitch P1 in which the plurality of mask holes are arranged along the first direction D1 is 195 ⁇ m, it is recognized that the ratio of the maximum value T1M to the first pitch P1 is 5.3%. It was.
- the minimum value Wmm1 of the first mask hole width Wm1 is 165.6 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1 is 6. It was found to be 3%.
- Comparative Example 3 A metal mask base material made of Invar and having a thickness of 25 ⁇ m was prepared. In addition, except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows, and the second resist pattern having a pattern element having no gap as the second pattern element was formed. A vapor deposition metal mask of Comparative Example 3 was obtained in the same manner as in Example 2. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 162. It was 5 ⁇ m.
- the pitch of the first pattern elements along the first direction is 162.5 ⁇ m
- the length of the first pattern elements along the first direction is 25 ⁇ m
- the first along the second direction was 30.5 ⁇ m.
- the length of the second pattern element along the second direction was 50.8 ⁇ m.
- the pitch of the first pattern elements along the first direction is 162.5 ⁇ m, and the length of the first pattern elements along the first direction is 4.3 ⁇ m, along the second direction.
- the length of the first pattern element was 64.1 ⁇ m.
- the length of the second pattern element along the second direction was 17.2 ⁇ m.
- the minimum value T1m in the thickness of the first mask element 41 is 8.0 ⁇ m in the cross section orthogonal to the first direction D1, and the second mask It was found that the maximum value T2M in the thickness of the element 42 was 17.4 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 46.0%. Further, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 4.9%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 35.1 ⁇ m, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 49.6%.
- the maximum value T1M in the thickness of the first mask element 41 was 8.0 ⁇ m in the cross section orthogonal to the second direction D2. Since the first pitch P1 in which the plurality of mask holes 43 are arranged along the first direction D1 is 162.5 ⁇ m, it was confirmed that the ratio of the maximum value T1M to the first pitch P1 was 4.9%. .
- the minimum value Wmm1 of the first mask hole width Wm1 is 138.5 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 5.8%.
- Comparative Example 4 A metal mask base material made of Invar and having a thickness of 25 ⁇ m was prepared. Moreover, the metal mask for vapor deposition of the comparative example 4 was obtained by the same method as Example 2 except having changed the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 162. It was 5 ⁇ m.
- the pitch of the first pattern elements along the first direction is 162.5 ⁇ m
- the length of the first pattern elements along the first direction is 13.8 ⁇ m
- the second direction The length of the first pattern element along the line was 48.6 ⁇ m.
- the length of the second pattern element along the second direction was 32.7 ⁇ m
- the length of the gap of the second pattern element was 12.0 ⁇ m. That is, in each of the two portions of the second pattern element that are located with a gap along the second direction, the length along the second direction was 10.3 ⁇ m.
- the minimum value T1m in the thickness of the first mask element 51 is 8.3 ⁇ m in the cross section orthogonal to the first direction D1, and the second mask
- the maximum value T2M in the thickness of the element 52 was found to be 10.4 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 79.8%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.1%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 35.2 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm2 of the second mask hole width Wm2 was 29.5%.
- the maximum value T1M in the thickness of the first mask element 51 was 8.3 ⁇ m in the cross section orthogonal to the second direction D2. Since the first pitch P1 in which the plurality of mask holes 53 are arranged along the first direction D1 is 162.5 ⁇ m, it was recognized that the ratio of the maximum value T1M to the first pitch P1 was 5.1%.
- the minimum value Wmm1 of the first mask hole width Wm1 is 138.0 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 6.0%.
- Comparative Example 5 A metal mask base material made of Invar and having a thickness of 20 ⁇ m was prepared. In addition, except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows, and the second resist pattern having a pattern element having no gap as the second pattern element was formed. A metal mask for vapor deposition of Comparative Example 5 was obtained in the same manner as Example 3. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 130 ⁇ m. there were.
- the pitch of the first pattern elements along the first direction is 130 ⁇ m
- the length of the first pattern elements along the first direction is 20 ⁇ m
- the first pattern elements along the second direction The length of was 24.4 ⁇ m.
- the length of the second pattern element along the second direction was 40.6 ⁇ m.
- the pitch of the first pattern elements along the first direction is 130 ⁇ m
- the length of the first pattern elements along the first direction is 3.5 ⁇ m
- the first along the second direction was 51.3 ⁇ m.
- the length of the second pattern element along the second direction was 17.2 ⁇ m.
- the minimum value T1m in the thickness of the first mask element 41 is 7.0 ⁇ m in the cross section orthogonal to the first direction D1, and the second mask
- the maximum value T2M in the thickness of the element 42 was found to be 13.7 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 51.1%. Furthermore, the ratio of the minimum value T1m to the second pitch P2 was found to be 5.4%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 27.7 ⁇ m, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 49.5%.
- the maximum value T1M in the thickness of the first mask element 41 is 7.0 ⁇ m in the cross section orthogonal to the second direction D2. Since the first pitch P1 in which the plurality of mask holes 43 are arranged along the first direction D1 is 130 ⁇ m, it was recognized that the ratio of the maximum value T1M to the first pitch P1 was 5.4%.
- the minimum value Wmm1 of the first mask hole width Wm1 is 110.6 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 6.3%.
- Example 6 A metal mask base material made of Invar and having a thickness of 20 ⁇ m was prepared. Moreover, the metal mask for vapor deposition of the comparative example 6 was obtained by the same method as Example 3 except having changed the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 130 ⁇ m. there were.
- the pitch of the first pattern elements along the first direction is 130 ⁇ m
- the length of the first pattern elements along the first direction is 11.0 ⁇ m, along the second direction.
- the length of the first pattern element was 38.9 ⁇ m.
- the length of the second pattern element along the second direction was 26.1 ⁇ m
- the length of the gap included in the second pattern element was 9.6 ⁇ m. That is, in each of the two portions of the second pattern element that are located with a gap along the second direction, the length along the second direction was 8.3 ⁇ m.
- the minimum value T1m in the thickness of the first mask element 51 is 7.3 ⁇ m in the cross section orthogonal to the first direction D1, and the second mask
- the maximum value T2M in the thickness of the element 52 was found to be 8.2 ⁇ m. That is, it was recognized that the ratio of the minimum value T1m to the maximum value T2M was 89.0%. Further, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.6%.
- the minimum value Wmm2 of the second mask hole width Wm2 was 28.1 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm2 of the second mask hole width Wm2 was 29.2%.
- the minimum value Wmm1 of the first mask hole width Wm1 is 110.0 ⁇ m, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1. was found to be 6.6%.
- the ratio of the maximum value T2M to the minimum value Wmm2, the minimum value Wmm2 of the second mask hole width Wm2, and the ratio of the minimum value T1m to the second pitch P2 were values shown in Table 1 below.
- the maximum value T1M in the cross section orthogonal to the second direction D2 the ratio of the maximum value T1M to the first pitch P1, the minimum value Wmm1 of the first mask hole width Wm1, and the first
- the ratio of the maximum value T1M to the minimum value Wmm1 of the mask hole width Wm1 was a value shown in Table 1 below.
- the ratio of the minimum value T1m to the maximum value T2M is 70% or more, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 is It was confirmed that the bending of the first mask element 21 in the continuous direction can be suppressed if it is 41% or more.
- the maximum value of the second mask hole width Wm2 with respect to the minimum value Wmm2 is maximized.
- the ratio of the value T2M is 41% or more, the ratio of the minimum value T1m to the maximum value T2M is smaller than 70%. Therefore, in each metal mask for vapor deposition 40, the strength at the portion where the first mask element 41 is continuous is smaller than the strength of the other portions to the extent that the folds concentrate on the continuous portion of the first mask element 41, As a result, it is considered that the entire metal mask 40 for evaporation has been broken.
- the ratio of the minimum value T1m to the maximum value T2M is 70% or more.
- the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 is smaller than 41%. Therefore, in each metal mask 50 for vapor deposition, the strength at the portion where the first mask element 51 is continuous is such that the folding is concentrated at a part of the portion where the first mask element 51 is continuous as compared with the strength of the other portions. As a result, it is considered that the metal mask 50 for vapor deposition was broken.
- the effects listed below can be obtained. (1) Since variations in thickness within the metal mask for vapor deposition 10 are suppressed, the first among the metal masks for vapor deposition 10 to such an extent that folding of the first mask elements 21 can be suppressed. The difference in strength between the continuous portion of the mask elements 21 and the other portions is suppressed. Therefore, it is possible to suppress the occurrence of continuous folds along the direction in which the mask holes 11 are arranged in the deposition metal mask 10.
- the strength of each first mask element 21 is the metal mask for vapor deposition. Compared with the other portions in FIG. 10, the size is such that the folding does not concentrate on the first mask element 21.
- the maximum value T1M in the thickness of the first mask element 21 is a predetermined size. Maintained above. Therefore, the generation
- the metal mask 10 for vapor deposition has such a degree that the folding of the continuous portions of the first mask element 21 is suppressed. The difference in strength between the continuous portion of the first mask elements 21 and the other portions is further suppressed.
- the strength of each first mask element 21 is a metal mask for vapor deposition. Compared with other portions in FIG. 10, the size is such that the folding is not concentrated on the first mask element 21.
- the embodiment described above can be implemented with appropriate modifications as follows.
- the plurality of mask holes 61 are arranged at a constant pitch along the first direction D1 and the second direction D2 in a plan view facing the first surface 60a.
- line may be the same in all the row
- the first width W1 of the first mask element 62 is smaller than the second width W2 of the second mask element 63.
- the ratio of the minimum value T1m in the thickness of the first mask element 62 to the maximum value T2M in the thickness of the second mask element 63 is 70% or more, and the first The ratio of the maximum value T2M in the thickness of the second mask element 63 to the minimum value Wmm2 of the second mask hole width Wm2 at the opening 11a may be 41% or more.
- the ratio of the maximum value T1M in the thickness of the first mask element 21 to the minimum value Wmm1 of the first mask hole width Wm1 may be smaller than 7%.
- the ratio of the minimum value T1m of the first mask element 21 to the maximum value T2M of the second mask element 22 is 70% or more, and the first opening
- the ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 at 11a may be 41% or more.
- the ratio of the maximum value T2M in the thickness of the first mask element 21 in the cross section orthogonal to the second direction D2 with respect to the first pitch P1 may be smaller than 6%.
- the ratio of the minimum value T1m of the first mask element 21 to the maximum value T2M of the second mask element 22 is 70% or more, and the first opening
- the ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 at 11a may be 41% or more.
- the minimum value T1m in the thickness of the first mask element 21 may be smaller than 12.5 ⁇ m. Even in such a configuration, in the cross section orthogonal to the first direction D1, the ratio of the minimum value T1m of the first mask element 21 to the maximum value T2M of the second mask element 22 is 70% or more, and the first opening The ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 at 11a may be 41% or more. Thereby, the effect equivalent to (1) and (2) mentioned above can be acquired.
- the step of forming the second hole element 11d constituting the mask hole 11 uses the second resist pattern 35 to simultaneously form the first arc-shaped element dp1 and the second arc-shaped element dp2 connected by the inflection element dp3.
- the resist pattern used for etching is peeled off from the metal mask base material 31, the resist pattern for forming the first arc-shaped element dp1 is positioned on the metal mask base material 31, and the resist pattern is used to form metal.
- the mask substrate 31 is etched. Thereby, the 2nd hole element 11d can be formed.
- the second hole element 11d can be formed by repeating the formation of the resist pattern and the etching of the metal mask substrate 31 twice.
- the second hole element 11d constituting the mask hole 11 can be formed by repeating the formation of the resist pattern and the etching of the metal mask base material 31 three times or more.
- each of one first arc-shaped element dp1 and two second arc-shaped elements dp2 constituting one second hole element 11d can be formed using different resist patterns.
- the second hole element 11d can be formed by repeating the formation of the resist pattern and the etching of the metal mask base material 31 three times.
- the thickness of the metal mask substrate 31 may be less than 20 ⁇ m, for example, 10 ⁇ m or more and less than 20 ⁇ m.
- a mask hole having a desired shape can be formed only by etching the metal mask base material 31 from the second surface 31b.
- the metal mask substrate 31 having a thickness of 10 ⁇ m or more and less than 20 ⁇ m is higher in definition than the metal mask 10 for vapor deposition that can be formed by the metal mask substrate 31 having a thickness of 20 ⁇ m or more. This is a preferable base material for manufacturing a metal mask 10 for vapor deposition.
- the first resist layer 32 is formed on the first surface 31a of the metal mask base material 31 from the above-described method of manufacturing the vapor deposition metal mask 10, and the first Forming the first resist pattern 34 from the resist layer 32 can be omitted.
- the etching of the metal mask substrate 31 using the first resist pattern 34 can be omitted, thereby forming the second protective layer 36 and the first protection.
- Forming layer 37 can also be omitted.
- the vapor deposition metal mask 10 can be obtained through the following steps. That is, vapor deposition is performed by forming a resist layer on the second surface 31b of the metal mask substrate 31, forming a resist pattern from the resist layer, and etching the metal mask substrate using the resist pattern.
- the metal mask 10 can be manufactured. In the middle of processing the metal mask base material 31 into the vapor deposition metal mask 10, a support member for supporting the metal mask base material 31 may be bonded to the metal mask base material 31.
- the second mask hole width in the second opening is the largest and the second mask hole width in the first opening is the smallest in the cross section orthogonal to the first direction D1.
- the second mask hole width gradually decreases from the second opening toward the first opening. Therefore, the ratio of the maximum value T2M in the thickness of the second mask element 22 to the second mask hole width in the first opening may be 41% or more.
- the metal mask for vapor deposition is not limited to the metal mask for vapor deposition used in the manufacture of organic EL displays, but the metal mask for vapor deposition used in the manufacture of other display devices, the formation of wiring provided in various devices, and various devices
- the metal mask for vapor deposition used for vapor deposition of the functional layer etc. which are equipped with may be sufficient.
- second pattern element 35 ... second resist pattern, 35c ... gap, 36 ... second protective layer, 37 ... first protective layer, cp1, dp1 ... first arc-shaped element, dp2 ... second Arc-shaped element, dp3 ... Inflection element R1 ... mask area, R2 ... peripheral area.
Abstract
Description
本発明は、マスク孔の並ぶ方向に沿って連なる折れを抑えることを可能にした蒸着用メタルマスクを提供することを目的とする。 These matters are not limited to the metal mask for vapor deposition used for the manufacture of display devices including organic EL displays, but also the metal for vapor deposition used for vapor deposition of functional layers provided for various devices and the formation of wiring provided for various devices. It is common to masks. In addition, such a matter also applies to a metal mask in which a plurality of mask holes are arranged in a lattice shape in a plan view facing one surface where a plurality of mask holes are opened, or a configuration in which each mask hole has a substantially square shape. It is common.
An object of this invention is to provide the metal mask for vapor deposition which enabled it to suppress the fold which continues along the direction where a mask hole is located in a line.
この点で、上記構成によれば、第1マスク孔幅の最小値に対する第1マスク要素の厚さにおける極大値の比が7%以上であるため、各第1マスク要素の強度が、蒸着用メタルマスクにおける他の部位に比べて、第1マスク要素に折れがより集中しない大きさになる。 In the metal mask for vapor deposition, the larger the maximum value in the thickness of the first mask element that defines the mask hole in the first direction with respect to the width of the mask hole that is a space extending along the first direction, the larger the metal for vapor deposition. The strength of the mask is increased.
In this respect, according to the above configuration, since the ratio of the maximum value in the thickness of the first mask element to the minimum value of the first mask hole width is 7% or more, the strength of each first mask element is for deposition. Compared to other portions of the metal mask, the size is such that the folding is not more concentrated on the first mask element.
図1から図5を参照して、蒸着用メタルマスクの構成を説明する。
図1が示すように、蒸着用メタルマスク10は、第1面10aと第2面10bとを備えている。蒸着用メタルマスク10は、第1方向D1に沿って延び、第1方向D1と直交する第2方向D2に沿って所定の幅を有する板状を有している。 [Configuration of metal mask for evaporation]
With reference to FIGS. 1 to 5, the configuration of the metal mask for vapor deposition will be described.
As shown in FIG. 1, the vapor
T1m/T2M × 100 ≧ 70 … 式(1) In the cross section orthogonal to the first direction D1, it is preferable that the minimum value T1m in the thickness of the
T1m / T2M × 100 ≧ 70 (1)
T2M/Wmm2 × 100 ≧ 41 … 式(2) The ratio of the maximum value T2M in the thickness of the
T2M / Wmm2 × 100 ≧ 41 (2)
T1M/P1 × 100 ≧ 6 … 式(3) As shown in FIG. 5, in the cross section orthogonal to the second direction D2, the
T1M / P1 × 100 ≧ 6 Formula (3)
T1M/Wmm1 × 100 ≧ 7 …式(4) The first mask hole width Wm1 has a minimum value Wmm1 in the middle of the direction from the
T1M / Wmm1 × 100 ≧ 7 Formula (4)
図6から図11を参照して、蒸着用メタルマスク10の製造方法を説明する。なお、図6から図11の各々には、図2のI-I線に沿う断面に相当する断面構造であって、各製造工程に対応する断面構造が示されている。 [Method of manufacturing metal mask for vapor deposition]
With reference to FIGS. 6 to 11, a method of manufacturing the
図12から図14を参照して、実施例および比較例を説明する。なお、以下に説明する実施例1から実施例3では、各実施例の蒸着用メタルマスクの製造に用いるメタルマスク用基材の厚さが互いに異なる。ただし、各蒸着用メタルマスクにおける極大値T2Mに対する極小値T1mの比、第2マスク孔幅Wm2の最小値Wmm2に対する極大値T2Mの比、第1ピッチP1に対する極大値T1Mの比、および、第1マスク孔幅Wm1の最小値Wmm1に対する極大値T1Mの比は、実施例間においてほぼ等しい値である。そのため、実施例1から実施例3の蒸着用メタルマスクを、便宜上、1つの図を参照して説明する。 [Example]
Examples and Comparative Examples will be described with reference to FIGS. In Examples 1 to 3 described below, the thicknesses of the metal mask base materials used for manufacturing the metal mask for vapor deposition of each example are different from each other. However, the ratio of the minimum value T1m to the maximum value T2M in each evaporation metal mask, the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2, the ratio of the maximum value T1M to the first pitch P1, and the first The ratio of the maximum value T1M to the minimum value Wmm1 of the mask hole width Wm1 is a substantially equal value between the examples. Therefore, the metal mask for vapor deposition of Example 1- Example 3 is demonstrated with reference to one figure for convenience.
インバー製であり、かつ、30μmの厚さを有するメタルマスク用基材を準備した。ネガ型のドライフィルムレジストをメタルマスク用基材の第1面に貼り付けることによって、メタルマスク用基材の第1面に第1レジスト層を形成し、ネガ型のドライフィルムレジストをメタルマスク用基材の第2面に貼り付けることによって、メタルマスク用基材の第2面に第2レジスト層を形成した。 [Example 1]
A metal mask base material made of Invar and having a thickness of 30 μm was prepared. A negative resist film is attached to the first surface of the metal mask base material to form a first resist layer on the first surface of the metal mask base material, and the negative dry film resist is used for the metal mask. The 2nd resist layer was formed in the 2nd surface of the base material for metal masks by affixing on the 2nd surface of a base material.
インバー製であり、かつ、25μmの厚さを有するメタルマスク用基材を準備した。また、第1レジストパターンの寸法、および、第2レジストパターンの寸法を以下のように変更した以外は、実施例1と同じ方法で実施例2の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は162.5μmであった。 [Example 2]
A metal mask base material made of Invar and having a thickness of 25 μm was prepared. Moreover, the metal mask for vapor deposition of Example 2 was obtained by the same method as Example 1 except having changed the dimension of the 1st resist pattern and the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 162. It was 5 μm.
インバー製であり、かつ、20μmの厚さを有するメタルマスク用基材を準備した。また、第1レジストパターンの寸法、および、第2レジストパターンの寸法を以下のように変更した以外は、実施例1と同じ方法で実施例3の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は130μmであった。 [Example 3]
A metal mask base material made of Invar and having a thickness of 20 μm was prepared. Moreover, the metal mask for vapor deposition of Example 3 was obtained by the same method as Example 1 except having changed the dimension of the 1st resist pattern and the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 130 μm. there were.
インバー製であり、かつ、30μmの厚さを有するメタルマスク用基材を準備した。また、第1レジストパターンの寸法、および、第2レジストパターンの寸法を以下のように変更し、かつ、第2パターン要素として隙間を有しないパターン要素を有する第2レジストパターンを形成した以外は、実施例1と同じ方法で比較例1の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は195μmであった。 [Comparative Example 1]
A metal mask base material made of Invar and having a thickness of 30 μm was prepared. In addition, except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows, and the second resist pattern having a pattern element having no gap as the second pattern element was formed. The metal mask for vapor deposition of the comparative example 1 was obtained by the same method as Example 1. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 195 μm. there were.
インバー製であり、かつ、30μmの厚さを有するメタルマスク用基材を準備した。また、第2レジストパターンの寸法を以下のように変更した以外は、実施例1と同じ方法で比較例2の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は195μmであった。 [Comparative Example 2]
A metal mask base material made of Invar and having a thickness of 30 μm was prepared. Moreover, the metal mask for vapor deposition of the comparative example 2 was obtained by the same method as Example 1 except having changed the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 195 μm. there were.
インバー製であり、かつ、25μmの厚さを有するメタルマスク用基材を準備した。また、第1レジストパターンの寸法、および、第2レジストパターンの寸法を以下のように変更し、かつ、第2パターン要素として隙間を有しないパターン要素を有する第2レジストパターンを形成した以外は、実施例2と同じ方法で比較例3の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は162.5μmであった。 [Comparative Example 3]
A metal mask base material made of Invar and having a thickness of 25 μm was prepared. In addition, except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows, and the second resist pattern having a pattern element having no gap as the second pattern element was formed. A vapor deposition metal mask of Comparative Example 3 was obtained in the same manner as in Example 2. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 162. It was 5 μm.
インバー製であり、かつ、25μmの厚さを有するメタルマスク用基材を準備した。また、第2レジストパターンの寸法を以下のように変更した以外は、実施例2と同じ方法で比較例4の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は162.5μmであった。 [Comparative Example 4]
A metal mask base material made of Invar and having a thickness of 25 μm was prepared. Moreover, the metal mask for vapor deposition of the comparative example 4 was obtained by the same method as Example 2 except having changed the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 162. It was 5 μm.
インバー製であり、かつ、20μmの厚さを有するメタルマスク用基材を準備した。また、第1レジストパターンの寸法、および、第2レジストパターンの寸法を以下のように変更し、かつ、第2パターン要素として隙間を有しないパターン要素を有する第2レジストパターンを形成した以外は、実施例3と同じ方法で比較例5の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は130μmであった。 [Comparative Example 5]
A metal mask base material made of Invar and having a thickness of 20 μm was prepared. In addition, except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows, and the second resist pattern having a pattern element having no gap as the second pattern element was formed. A metal mask for vapor deposition of Comparative Example 5 was obtained in the same manner as Example 3. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 130 μm. there were.
インバー製であり、かつ、20μmの厚さを有するメタルマスク用基材を準備した。また、第2レジストパターンの寸法を以下のように変更した以外は、実施例3と同じ方法で比較例6の蒸着用メタルマスクを得た。第1面と対向する平面視において、第1方向に沿って複数のマスク孔の位置する第1ピッチP1、および、第2方向に沿って複数のマスク孔の位置する第2ピッチP2は130μmであった。 [Comparative Example 6]
A metal mask base material made of Invar and having a thickness of 20 μm was prepared. Moreover, the metal mask for vapor deposition of the comparative example 6 was obtained by the same method as Example 3 except having changed the dimension of the 2nd resist pattern as follows. In a plan view facing the first surface, the first pitch P1 where the plurality of mask holes are positioned along the first direction and the second pitch P2 where the plurality of mask holes are positioned along the second direction are 130 μm. there were.
各蒸着用メタルマスクが製造された直後において、第1マスク要素が連なる方向での折れが蒸着用メタルマスクに生じているか否かを評価した。上述したように、各実施例および各比較例において、第1方向D1に直交する方向の断面における極大値T2M、極小値T1m、極大値T2Mに対する極小値T1mの比、第2マスク孔幅Wm2の最小値Wmm2、第2マスク孔幅Wm2の最小値Wmm2に対する極大値T2Mの比、および、第2ピッチP2に対する極小値T1mの比は、以下の表1に示す値であった。また、各実施例および各比較例において、第2方向D2と直交する断面における極大値T1M、第1ピッチP1に対する極大値T1Mの比、第1マスク孔幅Wm1の最小値Wmm1、および、第1マスク孔幅Wm1の最小値Wmm1に対する極大値T1Mの比は、以下の表1に示す値であった。 [Evaluation]
Immediately after each metal mask for vapor deposition was manufactured, it was evaluated whether or not the metal mask for vapor deposition occurred in the direction in which the first mask elements were connected. As described above, in each example and each comparative example, the maximum value T2M, the minimum value T1m, the ratio of the minimum value T1m to the maximum value T2M in the cross section in the direction orthogonal to the first direction D1, the second mask hole width Wm2 The ratio of the maximum value T2M to the minimum value Wmm2, the minimum value Wmm2 of the second mask hole width Wm2, and the ratio of the minimum value T1m to the second pitch P2 were values shown in Table 1 below. In each example and each comparative example, the maximum value T1M in the cross section orthogonal to the second direction D2, the ratio of the maximum value T1M to the first pitch P1, the minimum value Wmm1 of the first mask hole width Wm1, and the first The ratio of the maximum value T1M to the minimum value Wmm1 of the mask hole width Wm1 was a value shown in Table 1 below.
(1)蒸着用メタルマスク10内での厚さのばらつきが抑えられるため、第1マスク要素21の連なる部分において折れが生じることが抑えられる程度に、蒸着用メタルマスク10の中で、第1マスク要素21の連なる部分と、それ以外の部分とにおける強度の差が抑えられる。そのため、マスク孔11の並ぶ方向に沿って連なる折れが蒸着用メタルマスク10に生じることが抑えられる。 As described above, according to one embodiment of the metal mask for vapor deposition, the effects listed below can be obtained.
(1) Since variations in thickness within the metal mask for
・図15が示すように、蒸着用メタルマスク60では、第1面60aと対向する平面視において、複数のマスク孔61は、第1方向D1および第2方向D2に沿って一定のピッチで並び、かつ、各列を構成する複数のマスク孔61の第1方向D1における位置が、全ての列において同じであってもよい。すなわち、複数のマスク孔61は、四方格子状に並んでもよい。 The embodiment described above can be implemented with appropriate modifications as follows.
As shown in FIG. 15, in the vapor
Claims (4)
- 第1方向と、前記第1方向と直交する第2方向とに沿って並ぶ複数のマスク孔を備える蒸着用メタルマスクであって、
前記蒸着用メタルマスクは、第1面と第2面とを備え、
前記各マスク孔は、前記第1面に開口した第1開口と、前記第2面に開口した第2開口とを有し、
前記各マスク孔を区画する前記蒸着用メタルマスクの要素は、
前記第1方向において互いに対向する2つの第1マスク要素と、前記第2方向において互いに対向する2つの第2マスク要素とから構成され、
前記第1マスク要素と前記マスク孔とが、前記第1方向に沿って1つずつ交互に繰り返され、かつ、前記第2マスク要素と前記マスク孔とが、前記第2方向に沿って1つずつ交互に繰り返され、
前記第1マスク要素が前記第1方向に沿って有する幅は、前記第2マスク要素が前記第2方向に沿って有する幅よりも小さく、
前記第1方向と直交する断面において、前記第2マスク要素の厚さにおける極大値に対する前記第1マスク要素の厚さにおける極小値の比が、70%以上であり、
前記各マスク孔において、前記第1方向と直交する断面における前記マスク孔の幅がマスク孔幅であり、前記第1開口での前記マスク孔幅が、前記第2開口での前記マスク孔幅よりも小さく、
前記第1開口から前記第2開口までの間における前記マスク孔幅の最小値に対する前記第2マスク要素の厚さにおける前記極大値の比が、41%以上である
蒸着用メタルマスク。 A metal mask for vapor deposition comprising a plurality of mask holes arranged along a first direction and a second direction orthogonal to the first direction,
The metal mask for vapor deposition includes a first surface and a second surface,
Each mask hole has a first opening opened in the first surface, and a second opening opened in the second surface;
The element of the metal mask for vapor deposition that divides each mask hole,
Two first mask elements facing each other in the first direction, and two second mask elements facing each other in the second direction,
The first mask element and the mask hole are alternately repeated one by one along the first direction, and the second mask element and the mask hole are one along the second direction. Repeated alternately,
The width of the first mask element along the first direction is smaller than the width of the second mask element along the second direction;
In a cross section orthogonal to the first direction, a ratio of a minimum value in the thickness of the first mask element to a maximum value in the thickness of the second mask element is 70% or more;
In each mask hole, the width of the mask hole in a cross section orthogonal to the first direction is the mask hole width, and the mask hole width in the first opening is larger than the mask hole width in the second opening. Is also small
The deposition metal mask, wherein a ratio of the maximum value in the thickness of the second mask element to the minimum value of the mask hole width between the first opening and the second opening is 41% or more. - 複数の前記マスク孔は、前記第1方向に沿って一定のピッチで並び、
前記ピッチに対する極大値の比が6%以上であり、当該極大値は、前記第2方向と直交する断面における前記第1マスク要素の厚さにおける極大値である
請求項1に記載の蒸着用メタルマスク。 The plurality of mask holes are arranged at a constant pitch along the first direction,
The metal for vapor deposition according to claim 1, wherein a ratio of a maximum value to the pitch is 6% or more, and the maximum value is a maximum value in a thickness of the first mask element in a cross section orthogonal to the second direction. mask. - 前記マスク孔において、前記マスク孔幅が前記第2方向に沿うマスク孔幅である第2マスク孔幅であり、前記第2方向と直交する断面における前記マスク孔の幅が前記第1方向に沿うマスク孔幅である第1マスク孔幅であり、前記第1開口での前記第1マスク孔幅が、前記第2開口での前記第1マスク孔幅よりも小さく、
前記第1開口から前記第2開口までの間における前記第1マスク孔幅の最小値に対する前記第1マスク要素の厚さにおける極大値の比が、7%以上である
請求項1または2に記載の蒸着用メタルマスク。 In the mask hole, the mask hole width is a second mask hole width that is a mask hole width along the second direction, and the width of the mask hole in a cross section orthogonal to the second direction is along the first direction. A first mask hole width that is a mask hole width, wherein the first mask hole width in the first opening is smaller than the first mask hole width in the second opening;
The ratio of the maximum value in the thickness of the first mask element to the minimum value of the first mask hole width between the first opening and the second opening is 7% or more. Metal mask for vapor deposition. - 前記蒸着用メタルマスクが広がる方向と直交する方向から見て、複数の前記マスク孔は千鳥配列状に並んでいる
請求項1から3のいずれか一項に記載の蒸着用メタルマスク。 The metal mask for vapor deposition according to any one of claims 1 to 3, wherein the plurality of mask holes are arranged in a staggered arrangement as viewed from a direction orthogonal to a direction in which the metal mask for vapor deposition spreads.
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KR1020187029747A KR101968066B1 (en) | 2016-04-15 | 2017-04-13 | Thick metal mask |
JP2018503608A JP6341347B2 (en) | 2016-04-15 | 2017-04-13 | Metal mask for vapor deposition |
CN201780023714.6A CN109072404B (en) | 2016-04-15 | 2017-04-13 | Metal mask for vapor deposition |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019074104A1 (en) * | 2017-10-13 | 2019-04-18 | 凸版印刷株式会社 | Vapor deposition mask, manufacturing method for vapor deposition mask, and manufacturing method for display device |
WO2022030612A1 (en) * | 2020-08-06 | 2022-02-10 | 大日本印刷株式会社 | Vapor deposition mask and method for producing vapor deposition mask |
US20220098719A1 (en) * | 2019-11-21 | 2022-03-31 | Kunshan Go-Visionox Opto-Electronics Co., Ltd | Mask and evaporation system |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI661062B (en) * | 2016-04-15 | 2019-06-01 | 日商凸版印刷股份有限公司 | Metal mask for vapor deposition |
TWI828015B (en) * | 2021-12-01 | 2024-01-01 | 達運精密工業股份有限公司 | Manufacturing method of fine metal mask |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11229117A (en) * | 1998-02-12 | 1999-08-24 | Murata Mfg Co Ltd | Masking device |
JP2009074160A (en) * | 2007-08-24 | 2009-04-09 | Dainippon Printing Co Ltd | Vapor deposition mask and method for producing vapor deposition mask |
JP2014148745A (en) * | 2013-01-08 | 2014-08-21 | Dainippon Printing Co Ltd | Vapor deposition mask manufacturing method and vapor deposition mask |
JP2015129334A (en) * | 2014-01-08 | 2015-07-16 | 大日本印刷株式会社 | Method of manufacturing laminate mask, laminate mask, and laminate mask with protective film |
JP2015129333A (en) * | 2014-01-08 | 2015-07-16 | 大日本印刷株式会社 | Method of manufacturing laminate mask and laminate mask with protective film |
JP2015163734A (en) * | 2014-01-31 | 2015-09-10 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask and vapor deposition mask |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4230258B2 (en) | 2003-03-19 | 2009-02-25 | 東北パイオニア株式会社 | Organic EL panel and organic EL panel manufacturing method |
JP5636863B2 (en) * | 2010-10-18 | 2014-12-10 | 大日本印刷株式会社 | Metal mask and metal mask material |
JP5534093B1 (en) * | 2013-01-11 | 2014-06-25 | 大日本印刷株式会社 | Metal mask and metal mask manufacturing method |
JP6051876B2 (en) * | 2013-01-11 | 2016-12-27 | 大日本印刷株式会社 | Metal mask and metal mask manufacturing method |
WO2016060216A1 (en) * | 2014-10-15 | 2016-04-21 | シャープ株式会社 | Deposition mask, deposition device, deposition method, and deposition mask manufacturing method |
JP5846279B2 (en) * | 2014-10-20 | 2016-01-20 | 大日本印刷株式会社 | Metal mask and metal mask material |
CN106033802B (en) * | 2015-03-17 | 2018-06-29 | 上海和辉光电有限公司 | A kind of evaporation mask plate and preparation method thereof |
TWI661062B (en) * | 2016-04-15 | 2019-06-01 | 日商凸版印刷股份有限公司 | Metal mask for vapor deposition |
-
2017
- 2017-04-12 TW TW106112220A patent/TWI661062B/en active
- 2017-04-13 KR KR1020187029747A patent/KR101968066B1/en active IP Right Grant
- 2017-04-13 JP JP2018503608A patent/JP6341347B2/en active Active
- 2017-04-13 WO PCT/JP2017/015202 patent/WO2017179677A1/en active Application Filing
- 2017-04-13 CN CN201720384313.0U patent/CN206828626U/en not_active Withdrawn - After Issue
- 2017-04-13 CN CN201780023714.6A patent/CN109072404B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11229117A (en) * | 1998-02-12 | 1999-08-24 | Murata Mfg Co Ltd | Masking device |
JP2009074160A (en) * | 2007-08-24 | 2009-04-09 | Dainippon Printing Co Ltd | Vapor deposition mask and method for producing vapor deposition mask |
JP2014148745A (en) * | 2013-01-08 | 2014-08-21 | Dainippon Printing Co Ltd | Vapor deposition mask manufacturing method and vapor deposition mask |
JP2015129334A (en) * | 2014-01-08 | 2015-07-16 | 大日本印刷株式会社 | Method of manufacturing laminate mask, laminate mask, and laminate mask with protective film |
JP2015129333A (en) * | 2014-01-08 | 2015-07-16 | 大日本印刷株式会社 | Method of manufacturing laminate mask and laminate mask with protective film |
JP2015163734A (en) * | 2014-01-31 | 2015-09-10 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask and vapor deposition mask |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019074104A1 (en) * | 2017-10-13 | 2019-04-18 | 凸版印刷株式会社 | Vapor deposition mask, manufacturing method for vapor deposition mask, and manufacturing method for display device |
US11877499B2 (en) | 2017-10-13 | 2024-01-16 | Toppan Printing Co., Ltd. | Vapor deposition mask, manufacturing method for vapor deposition mask, and manufacturing method for display device |
US20220098719A1 (en) * | 2019-11-21 | 2022-03-31 | Kunshan Go-Visionox Opto-Electronics Co., Ltd | Mask and evaporation system |
WO2022030612A1 (en) * | 2020-08-06 | 2022-02-10 | 大日本印刷株式会社 | Vapor deposition mask and method for producing vapor deposition mask |
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CN109072404A (en) | 2018-12-21 |
KR101968066B1 (en) | 2019-04-10 |
CN206828626U (en) | 2018-01-02 |
TWI661062B (en) | 2019-06-01 |
JPWO2017179677A1 (en) | 2018-07-05 |
TW201741475A (en) | 2017-12-01 |
KR20180117712A (en) | 2018-10-29 |
CN109072404B (en) | 2020-01-24 |
JP6341347B2 (en) | 2018-06-13 |
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