KR20180117712A - Thick metal mask - Google Patents

Abstract

In the vapor-deposition metal mask, the elements of the vapor-deposition metal mask for partitioning each mask hole include two first mask elements facing each other in the first direction and two second mask elements facing each other in the second direction, Element. The ratio of the minimum value in the thickness of the first mask element to the maximum value in the thickness of the second mask element is 70% or more in a cross section orthogonal to the first direction. The width of the mask hole in the cross section orthogonal to the first direction in each mask hole is the mask hole width and the width of the second mask element with respect to the minimum value of the width of the mask hole between the first opening and the second opening The ratio of the maximum value in thickness is 41% or more.

Description

Thick metal mask

The present invention relates to a vapor-deposited metal mask.

An organic EL display is known as one of display devices manufactured using a vapor deposition method. The organic layer included in the organic EL display is a sediment of organic molecules sublimated in the deposition process. The metal mask used in the deposition process has a plurality of mask holes, and each mask hole is a passage through which the sublimed organic molecules pass.

Each mask hole penetrates the metal mask along the thickness direction. Each mask hole defines a rectangular area, and the plurality of mask holes are arranged in, for example, a staggered arrangement when viewed from the plane facing the open surface of the plurality of mask holes (see, for example, Patent Document 1 Reference).

Japanese Patent Application Laid-Open No. 2004-281339

Incidentally, the width between the adjacent mask holes may be different from each other in the extending direction of the mask hole and the direction intersecting the extending direction. A relatively small portion among the widths between the mask holes is a weak portion having a lower strength than the other portions in the metal mask. In a metal mask having a thickness of less than 1 mm, if the weak portions and the mask holes are alternately repeated one by one in one direction, the folding along the direction in which the weak portions are formed may occur in the metal mask.

These matters are not limited to the vapor deposition metal mask used for manufacturing the display device including the organic EL display, and may be used for forming wirings of various devices, vapor deposition It is also common to worn metal masks. This is also applicable to a metal mask in which a plurality of mask holes are lined up in a lattice when viewed from a plane opposite to one surface in which a plurality of mask holes are opened, .

An object of the present invention is to provide a vapor-deposition metal mask capable of suppressing the folding along the direction in which the mask holes lie.

The metal mask for vapor deposition to solve the above problems is a metal mask having a plurality of mask holes arranged along a first direction and a second direction orthogonal to the first direction. The vapor deposition metal mask has a first surface and a second surface, and each of the mask holes has a first opening opened on the first surface and a second opening opened on the second surface. The elements of the vapor deposition metal mask for partitioning the respective mask holes are constituted by two first mask elements facing each other in the first direction and two second mask elements facing each other in the second direction do. The first mask element and the mask hole are alternately repeated one by one along the first direction and the second mask element and the mask hole are alternately repeated one by one along the second direction. The width of the first mask element along the first direction is smaller than the width of the second mask element along the second direction. The ratio of the minimum value in the thickness of the first mask element to the maximum value in the thickness of the second mask element is 70% or more in a cross section orthogonal to the first direction. The width of the mask hole in the cross section orthogonal to the first direction is the width of the mask hole in the first opening and the width of the mask hole in the first opening is the width of the mask hole in the second opening, Lt; / RTI > The ratio of the maximum value in the thickness of the second mask element to the minimum value of the mask hole width between the first opening and the second opening is 41% or more.

According to the above arrangement, in the cross section orthogonal to the first direction, the difference between the maximum value in the thickness of the second mask element and the minimum value in the thickness of the first mask element becomes smaller than 30% The variation in the thickness of the film is suppressed. Therefore, the difference in strength between the portion of the metal mask on which the first mask element is continued and the other portion is suppressed to such an extent that the occurrence of folding is suppressed in the portion following the first mask element.

In addition, in the vapor-deposition metal mask, the larger the mask hole width, the larger the length of the first mask element along the second direction. On the other hand, the thickness of the first mask element is generally determined by the maximum value in the thickness of the second mask element sandwiching the first mask element in the second direction, and the larger the maximum value, It grows.

In this respect, according to the above arrangement, since the ratio of the maximum value in the thickness of the second mask element to the minimum value of the mask hole width is 41% or more, the strength of each first mask element is The size of the first mask element is such that folding is not concentrated in the first mask element.

As a result, the folding along the direction in which the mask holes lie is suppressed from occurring in the vapor-deposition metal mask.

Wherein the plurality of mask holes are arranged at a constant pitch along the first direction, and the ratio of the maximum value to the pitch is 6% or more, and the maximum value is set to a value that is orthogonal to the second direction It is preferable that the maximum value in the thickness of the first mask element in the cross section.

The pitch along the first direction is the smallest unit of space with the elements constituting the deposition metal mask, i.e., the first mask element. Of these, the first mask element is a portion which is maintained at almost a predetermined size regardless of the size of the organic layer formed by the vapor-deposition metal mask. The size of the first mask element is determined by, for example, the size of a peripheral circuit or the like, and is a minimum size in increasing the efficiency of light emission in the organic EL display. On the other hand, the space included in the pitch is a portion whose size is changed by the resolution and the like required for the organic EL display.

In this regard, in the vapor-deposited metal mask, the maximum value in the thickness of the first mask element is maintained at a predetermined value or larger even if the pitch is changed, that is, the space included in the pitch is changed. Therefore, occurrence of folding in the first mask element is suppressed in the vapor-deposition metal mask.

Wherein a width of the mask hole is a second mask hole width having a mask hole width along the second direction and a width of the mask hole at a cross section orthogonal to the second direction is a width of the second mask hole, Wherein a width of the first mask hole in the first opening is smaller than a width of the first mask hole in the second opening and a width of the first mask hole in the first opening to the second opening The ratio of the maximum value in the thickness of the first mask element to the minimum value of the width of the first mask hole in a range of 7% or more.

The larger the maximum value in the thickness of the first mask element for partitioning the mask hole in the first direction with respect to the width of the mask hole which is a space extending along the first direction in the vapor-deposition metal mask, Strength increases.

In this regard, according to the above configuration, since the ratio of the maximum value in the thickness of the first mask element to the minimum value of the first mask hole width is 7% or more, the strength of each first mask element is The size of the first mask element is smaller than that of the other portions in the first mask element.

In the vapor-deposition metal mask, a plurality of the mask holes may be arranged in a staggered arrangement in a direction orthogonal to a direction in which the vapor-deposition metal mask is widened.

According to the above arrangement, it is possible to suppress folding along the direction in which the mask holes are lined, in a vapor-deposition metal mask in which a plurality of mask holes are arranged in a staggered arrangement.

According to the present invention, folding along the direction in which the mask holes are lined can be suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial perspective view showing a partially oblique structure in an embodiment embodying a vapor deposition metal mask of the present invention; FIG.
FIG. 2 is a partial plan view showing a partial planar structure of a vapor-deposition metal mask as viewed in a plane facing the first surface; FIG.
3 is a partial sectional view schematically showing a part of a cross section orthogonal to the first direction;
4 is a partial sectional view schematically showing a part of a cross section orthogonal to the first direction;
5 is a partial sectional view schematically showing a part of a cross section orthogonal to the second direction;
6 is a process chart for explaining a step of forming a resist layer in a method of manufacturing a deposition metal mask.
7 is a process diagram for explaining a step of patterning a resist layer in a method of manufacturing a deposition metal mask.
8 is a partial plan view showing a part of a planar structure of a resist pattern when viewed from a plane facing the first surface of the base material for metal mask;
9 is a partial plan view showing a part of the planar structure of the resist pattern when viewed from a plane facing the second surface of the metal mask base material.
10 is a process diagram for explaining a step of etching the base material for a metal mask from the first surface in the method for manufacturing a deposition-inducing metal mask.
11 is a process diagram for explaining a step of etching a metal mask base material from a second surface in a method of manufacturing a deposition metal mask.
12 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the first direction in the first to third embodiments;
13 is a partial sectional view schematically showing a part of a cross section orthogonal to the first direction in Comparative Examples 1, 3, and 5. Fig.
FIG. 14 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the first direction in Comparative Examples 2, 4, and 6. FIG.
Fig. 15 is a plan view showing a planar structure viewed from a direction opposite to a first surface in a vapor-depositing metal mask according to a modification; Fig.

1 to 14, an embodiment in which the metal mask of the present invention is embodied will be described. Hereinafter, the configuration of the deposition metal mask, the method of manufacturing the deposition metal mask, and the embodiments will be described in order. In addition, the vapor deposition metal mask described below is a vapor deposition metal mask used for manufacturing an organic EL display having a plurality of organic layers.

[Composition of vapor-deposited metal mask]

Referring to Figs. 1 to 5, the configuration of the deposition metal mask will be described.

As shown in Fig. 1, the vapor-deposition metal mask 10 has a first surface 10a and a second surface 10b. The vapor deposition metal mask 10 has a plate shape extending along the first direction D1 and having a predetermined width along the second direction D2 perpendicular to the first direction D1.

The vapor deposition metal mask 10 has a plurality of mask holes 11 arranged along the first direction D1 and the second direction D2. The first surface 10a is provided with a mask region R1 which is an area where a plurality of mask holes 11 are formed and a peripheral region which surrounds the mask region R1 when viewed from the direction opposite to the first surface 10a R2 are partitioned. The mask region R1 is a region to be processed for forming a plurality of mask holes 11 and the peripheral region R2 is a region to which this processing is not performed.

A plurality of mask regions R1 may be defined on the first surface 10a at predetermined intervals along the first direction D1 and may be divided along the first direction D1 and the second direction D2 A plurality of mask regions R1 may be partitioned at predetermined intervals.

The metal mask 10 is preferably made of a metal and is preferably an inverse. Further, the material for forming the vapor-depositing metal mask 10 may be a metal other than Invar. The thickness T of the metal mask 10 in the peripheral region R2 is preferably 20 mu m or more and 50 mu m or less, for example.

Fig. 2 shows a planar structure of the deposition-enhancing metal mask 10 in a direction opposite to the first surface 10a.

2, the elements of the deposition-enhancing metal mask 10 for partitioning the respective mask holes 11 in the deposition-enhancing metal mask 10 are divided into two elements, which are opposed to each other in the first direction D1, The first mask element 21 and two second mask elements 22 facing each other in the second direction D2.

The first mask element 21 and the mask hole 11 are alternately repeated one by one along the first direction D1 and the second mask element 22 and the mask hole 11 are repeated alternately one by one in the first direction D1, (11) are alternately repeated one by one along the second direction (D2).

The width of the first mask element 21 along the first direction D1 is a first width W1 and the width of the second mask element 22 along the second direction D2 is a second width W2). The first width W1 of the first mask element 21 is smaller than the second width W2 of the second mask element 22. [

The metal mask 10 is widened along a plane defined by the first direction D1 and the second direction D2 and a plurality of metal masks 10 are formed on the surface of the metal mask 10 as viewed in a direction perpendicular to the direction in which the metal mask 10 expands. The mask holes 11 are arranged in a staggered arrangement. In other words, as viewed in the direction opposite to the first surface 10a, the plurality of mask holes 11 are arranged in a staggered arrangement.

Each mask hole 11 defines a rectangular area and a width of each mask hole 11 along the first direction D1 is larger than a width of the mask hole 11 along the first direction D1, (11) is greater than the width along the second direction (D2). The plurality of mask holes 11 are arranged at a constant first pitch P1 along the first direction D1.

In the plurality of mask holes 11, the plurality of mask holes 11 arranged along the first direction D1 constitute one row. In the plurality of mask holes 11 constituting each column, the positions in the first direction D1 are overlapped with each other at one column. On the other hand, in the rows adjacent to each other in the second direction D2, the positions of the plurality of mask holes 11 constituting one row in the first direction D1 constitute the other row The positions of the plurality of mask holes 11 in the first direction D1 are shifted by a half pitch. Of the plurality of mask holes 11, the mask holes 11 in which the positions in the first direction D1 are overlapped are arranged at a constant second pitch P2 along the second direction D2. The second pitch P2 is equivalent to the first pitch P1. The first pitch P1 and the second pitch P2 are generally equal to each other along the pixel shape.

In the plurality of mask holes 11 arranged in a staggered arrangement, one first mask element 21 located between two neighboring mask holes 11 in the first direction D1 is divided into two And functions as an element of the vapor deposition metal mask 10 for partitioning each of the mask holes 11. It is also possible to function as the second mask element 22 for one mask hole 11 in the vapor deposition metal mask 10 between the adjacent two mask holes 11 in the second direction D2 And a part of the part functioning as the second mask element 22 with respect to the other mask hole 11 are overlapped with each other.

Further, in the plurality of mask holes 11 arranged in a staggered arrangement, the positional deviation of the mask holes 11 in the first direction D1 in the mutually adjacent rows in the second direction D2 , May be smaller than 1/2 pitch, or may be larger than 1/2 pitch. In each mask hole 11, the width along the first direction D1 and the width along the second direction D2 may be equal to each other.

3 is a cross-sectional view of a metal mask 10 having a cross section perpendicular to the first direction D1 and showing a cross section passing through the center of the first mask element 21 in the first direction D1, Fig. Fig. 3 shows a cross-sectional structure taken along the line I-I in Fig.

3, the thickness of the first mask element 21 has a minimum value T1m and the thickness of the second mask element 22 has a maximum value T2M (T2M) in a cross section orthogonal to the first direction D1 ).

It is preferable that the minimum value T1m in the thickness of the first mask element 21 is 12.5 占 퐉 or more in a cross section orthogonal to the first direction D1. The ratio of the minimum value T1m in the thickness of the first mask element 21 to the maximum value T2M in the thickness of the second mask element 22 is 70% or more. That is, the minimum value T1m in the thickness of the first mask element 21 and the maximum value T2M in the thickness of the second mask element 22 satisfy the following formula (1).

T1m / T2M × 100 ≥ 70 ... Equation (1)

According to the metal mask 10 of this embodiment, the thickness of the first mask element 21 is secured at 12.5 占 퐉 or more in a cross section orthogonal to the first direction D1. Therefore, in the vapor deposition metal mask 10, the portion where the first mask element 21 is continued and the portion other than the portion where the first mask element 21 is formed The difference in strength between the first and second layers is further suppressed.

The difference between the maximum value T2M in the thickness of the second mask element 22 and the minimum value T1m in the thickness of the first mask element 21 is less than 30% Is suppressed.

Therefore, in the portion of the vapor deposition metal mask 10 where the first mask element 21 is continued and portions other than the portion where the first mask element 21 is formed, So that the difference in strength between them is suppressed. As a result, the folding along the direction in which the mask holes 11 lie is suppressed, particularly, the folding along the direction in which the first mask elements 21 lie is prevented from occurring in the vapor-deposition metal mask 10.

Each mask hole 11 has a first opening 11a opened in the first surface 10a and a second opening 11b opened in the second surface 10b. Each mask hole 11 is constituted by a first hole element 11c including a first opening 11a and a second hole element 11d including a second opening 11b, The first hole element 11c and the second hole element 11d are connected to each other in the thickness direction of the vapor deposition metal mask 10. The portion where the first hole element 11c and the second hole element 11d are connected is the continuous element 11e.

The width of the mask hole 11 in the cross section orthogonal to the first direction D1 and the width of the mask hole 11 along the second direction D2 in the respective mask holes 11, Hole width Wm2. The second mask hole width Wm2 in the first opening 11a is smaller than the second mask hole width Wm2 in the second opening 11b.

The second mask hole width Wm2 in the first hole element 11c is the largest in the first opening 11a and becomes gradually smaller toward the continuous element 11e and becomes smaller in the second hole element 11d The second mask hole width Wm2 in the first opening 11b is the largest in the second opening 11b and gradually becomes smaller toward the continuous element 11e. That is, in each mask hole 11, the second mask hole width Wm2 in the continuous element 11e is the smallest. The length along the thickness direction of the vapor deposition metal mask 10 in the first hole element 11c is equal to the length along the thickness direction of the vapor deposition metal mask 10 in the second hole element 11d Lt; / RTI >

The ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 is 41% or more. That is, the minimum value (Wmm2) of the second mask hole width (Wm2) and the maximum value (T2M) in the thickness of the second mask element (22) satisfy the following formula (2).

T2M / Wmm2 x 100 > = 41 ... Equation (2)

The larger the second mask hole width Wm2 in the vapor-deposition metal mask 10, the larger the length of the first mask element 21 along the second direction D2. On the other hand, the thickness of the first mask element 21 is determined by the maximum value T2M in the thickness of the second mask element 22 sandwiching the first mask element 21 in the second direction D2 And the larger the maximum value T2M is, the larger the thickness of the first mask element 21 is.

In this respect, in the above-described deposition metal mask 10, the ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 is 41 The strength of each first mask element 21 is such that the folding is not concentrated in the first mask element 21 as compared with the other portions in the thick metal mask 10. [

4, the surface defining the second hole element 11d is the second inner circumferential surface 11dp, and in the section orthogonal to the first direction D1, the second inner circumferential surface 11dp is divided into the first An arcuate element dp1, a second arcuate element dp2, and an inflection element dp3. The two first arcuate elements dp1 are opposed in the second direction D2 and the two second arcuate elements dp2 are opposed in the second direction D2 on the second inner circumferential surface 11dp , And the two inflection elements dp3 are opposed in the second direction D2.

The first arcuate element dp1 comprises a continuous element 11e and the second arcuate element dp2 comprises a second opening 11b. The radius of curvature of the first arcuate element dp1 and the radius of curvature of the second arcuate element dp2 are different from each other and the radius of curvature of the first arcuate element dp1 is less than the radius of curvature of the second arcuate element dp2 Big. The flexural element dp3 is a portion to which the first arcuate element dp1 and the second arcuate element dp2 are connected. Each of the first arcuate element dp1 and the second arcuate element dp2 has a curvature in which the center of curvature of each arcuate element is located outside the deposition metal mask 10.

The first inner circumferential surface 11cp has a first opening 11a and a second inner circumferential surface 11cb which are perpendicular to the first direction D1, And a first arcuate element (cp1) including a first arcuate element (11e). In the first inner circumferential surface 11cp, the two first arcuate elements cp1 are opposed to each other in the second direction D2. The first arcuate element (cp1) has a curvature in which the center of curvature of the first arcuate element (cp1) is located outside the vapor-deposition metal mask (10).

5 is a sectional view of a metal mask 10 that has a cross section perpendicular to the second direction D2 and which has a cross section that passes through the center of the first mask element 21 in the second direction D2, Fig. Fig. 5 shows a cross-sectional structure taken along the line II-II in Fig.

As shown in Fig. 5, the first mask element 21 has a maximum value T1M in a cross section orthogonal to the second direction D2. The ratio of the maximum value T1M in the thickness of the first mask element 21 to the first pitch P1 along the above-described first direction D1 is 6% or more. That is, the first pitch P1 along the first direction D1 and the maximum value T1M of the first mask element 21 satisfy the following formula (3).

T1M / P1 × 100 ≥ 6 ... Equation (3)

The first pitch P1 along the first direction D1 is the smallest unit of space with the elements constituting the deposition metal mask 10, i.e., the first mask element 21. Of these, the first mask element 21 is a portion which is maintained at a substantially predetermined size regardless of the size of the organic layer formed by the vapor-deposition metal mask 10. The size of the first mask element 21 is determined by, for example, the size of a peripheral circuit or the like, and is a minimum size in increasing the efficiency of light emission in the organic EL display. On the other hand, the space included in the first pitch P1 is a portion whose size is changed by the resolution and the like required for the organic EL display.

In this regard, in the vapor-deposition metal mask 10, even if the size of the first pitch P1 is changed, that is, the size of the space included in the first pitch P1 is changed, the thickness of the first mask element 21 The maximum value T1M is maintained at a predetermined value or more. Therefore, occurrence of folding in the first mask element 21 out of the vapor-deposition metal mask 10 is suppressed.

In the cross section orthogonal to the second direction D2, the first mask element 21 has a substantially pentagonal shape. Therefore, the first mask element 21 has the maximum value T1M in the thickness at the vertex having the greatest distance from the side along the first surface 10a.

The width of the mask hole 11 in the cross section perpendicular to the second direction D2 and the width of the mask hole 11 along the first direction D1 in the respective mask holes 11 Hole width Wm1. The first mask hole width Wm1 in the first opening 11a is smaller than the first mask hole width Wm1 in the second opening 11b.

The first mask hole width Wm1 has a minimum value Wmm1 in the direction from the first opening 11a toward the second opening 11b. The ratio of the maximum value T1M in the thickness of the first mask element 21 to the minimum value Wmm1 of the first mask hole width Wm1 is 7% or more. That is, the minimum value (Wmm1) of the first mask hole width (Wm1) and the maximum value (T1M) in the thickness of the first mask element (21) satisfy the following expression (4).

T1M / Wmm1 × 100 ≥ 7 ... Equation (4)

The mask 1 is divided into a first mask 1 and a second mask 2 in the first direction D1 with respect to the width of the mask hole 11 which is a space extending along the first direction D1, The greater the maximum value T1M in the thickness of the mask element 21, the higher the strength of the vapor-deposition metal mask 10 is.

In this regard, in the vapor-deposition metal mask 10, the ratio of the maximum value T1M in the thickness of the first mask element 21 to the minimum value Wmm1 of the first mask hole width Wm1 is 7% Therefore, the strength of each first mask element 21 is such that the folding of the first mask element 21 is less concentrated than the other portions of the thick metal mask 10.

The formation of the organic layer on the object to be film-formed using the metal mask 10 is carried out as follows. Hereinafter, the first direction D1 and the second direction D2 of the vapor-deposition metal mask 10 correspond to the first direction D1 and the second direction D2 of the object to be film-formed after film formation .

For example, when forming the organic layer, first, a blue organic layer is formed on the object to be formed by using the evaporation-resistant metal mask 10. Subsequently, a green organic layer and a red organic layer were formed on the blue organic layer in the second direction D2 and in the second direction D2 adjacent to the one blue organic layer using another vapor deposition metal mask. The organic layers are formed to lie along the first direction D1.

For example, first, a blue organic layer is formed on a deposition target using a vapor-deposition metal mask 10. Subsequently, a green organic layer and a red organic layer were formed on the blue organic layer in the second direction D2 and in the second direction D2 adjacent to the one blue organic layer using another vapor deposition metal mask. The organic layers are formed so as to lie along the second direction D2.

[Manufacturing method of metal mask for vapor deposition]

6 to 11, a method of manufacturing the deposition-enhancing metal mask 10 will be described. Each of Figs. 6 to 11 is a cross-sectional structure corresponding to a cross section taken along the line I-I in Fig. 2, and shows a cross-sectional structure corresponding to each manufacturing step.

As shown in Fig. 6, when manufacturing the deposition-enhancing metal mask 10, first, the metal-base substrate 31 for forming the deposition-enhancing metal mask 10 is prepared. It is preferable that the substrate 31 for the metal mask is made of Invar, and the thickness of the substrate 31 for the metal mask is preferably 20 m or more and 50 m or less, for example.

The metal mask base material 31 has a first surface 31a and a second surface 31b which is a surface opposite to the first surface 31a. The first surface 31a of the metal mask base material 31 corresponds to the first surface 10a of the deposition metal mask 10 and the second surface 31b of the metal mask base material 31 corresponds, And corresponds to the second surface 10b of the vapor-deposited metal mask 10.

The first resist layer 32 is formed on the first surface 31a of the substrate 31 for the metal mask and the second resist layer 33 is formed on the second surface 31b. Each of the resist layers may be formed on the metal mask base material 31 by pasting a dry film resist, or may be formed by applying a coating solution containing a material for forming a resist layer to the surface. The material for forming the resist layer is preferably a negative type resist material, but may be a positive type resist material.

7, a part of the first resist layer 32 is removed from the first surface 31a of the metal mask base material 31 to form the first resist pattern 34. As shown in FIG. A part of the second resist layer 33 is removed from the second surface 31b of the metal mask base material 31 to form the second resist pattern 35. [ When each resist pattern is formed, only a portion of the resist layer left on the metal mask base material 31 as a resist pattern is exposed if the resist layer is a negative type. Then, the exposed resist layer is developed. In the case of a positive resist layer, only the portion of the resist layer to be removed from the metal mask base material 31 may be exposed.

The exposure of the first resist layer 32 and the exposure of the second resist layer 33 may be performed simultaneously or separately. The development of the first resist layer 32 and the development of the second resist layer 33 may be performed simultaneously or separately.

The first resist pattern 34 has a plurality of first pattern elements 34a and a plurality of second pattern elements 34b. The first resist pattern 34 is a resist pattern for forming the first hole element 11c in the plurality of mask holes 11 on the base material 31 for the metal mask. Each of the first pattern elements 34a is a pattern element for defining the first mask element 21 on the metal mask base 31 and each second pattern element 34b is a pattern element for dividing the first mask element 21, Is a pattern element for partitioning the second mask element (22) in the second mask element (31).

The second resist pattern 35 has a plurality of first pattern elements 35a and a plurality of second pattern elements 35b. The second resist pattern 35 is a resist pattern for forming the second hole elements 11d in the plurality of mask holes 11 on the metal mask base material 31. Like the first resist pattern 34, each first pattern element 35a is a pattern element for partitioning the first mask element 21 into the metal mask base 31, and each second pattern element 35b ) Is a pattern element for partitioning the second mask element 22 into the metal mask base material 31.

Fig. 8 shows a planar structure of the first resist pattern 34 when viewed from a plane facing the first surface 31a of the metal mask base material 31. As shown in Fig. In FIG. 8, dots are given to the first resist pattern 34 for the sake of easy understanding of the shape of the first resist pattern 34. FIG.

8, the first pattern element 34a extends in the second direction D2 when seen in a plane facing the first surface 31a of the metal mask base 31, And are arranged at regular intervals along one direction (D1). The pitch at which the first pattern element 34a is repeated in the first direction D1 is set such that the first mask element 21 is repeated along the first direction D1 in the deposition metal mask 10 It is almost equal to the pitch.

The second pattern element 34b extends along the first direction D1 and the two neighboring second pattern elements 34b in the second direction D2 are spaced apart from each other by the length of the first pattern element 34a Are spaced apart from each other by a distance of. The width W34a of the first pattern element 34a along the first direction D1 is smaller than the width W34b of the second pattern element 34b along the second direction D2.

9 shows a planar structure of the second resist pattern 35 when viewed in a plane opposite to the second surface 31b of the metal mask base 31. As shown in Fig. In Fig. 9, dots are given to the second resist pattern 35 for the sake of easy understanding of the shape of the second resist pattern 35. As shown in Fig.

9, the first pattern element 35a extends in the second direction D2 when viewed in a plane opposite to the second surface 31b of the metal mask base 31, And are arranged at regular intervals along the direction D1. The pitch at which the first pattern element 35a is repeated in the first direction D1 is set such that the first mask element 21 is repeated along the first direction D1 in the vapor deposition metal mask 10 It is almost equal to the pitch.

The second pattern element 35b extends along the first direction D1 and the two neighboring second pattern elements 35b in the second direction D2 are spaced apart from each other by the length of the first pattern element 35a Are spaced apart from each other by a distance of. The second pattern element 35b has a gap 35c extending in the first direction D1 and a gap 35c is formed in the second direction D2 of each second pattern element 35b. It is located in the center.

The width W35c of the gap 35c along the second direction D2 is equal to the distance between the two second pattern elements 35b in the second direction D2, that is, the second direction D2 Is smaller than the width W35a2 of the first pattern element 35a. The width W35a1 of the first pattern element 35a along the first direction D1 is smaller than the width W35b of the second pattern element 35b along the second direction D2.

The first pattern element 35a is located between the adjacent second pattern elements 35b along the second direction D2 and is located between the first pattern elements 35a in the second direction D2 Are connected to two second pattern elements 35b.

As shown in Fig. 10, the metal mask base material 31 is etched from the first surface 31a by using the first resist pattern 34. Then, as shown in Fig. 10 shows the state of the metal mask base 31 during the etching of the metal mask base 31 from the first surface 31a. If the substrate 31 for the metal mask is made of Invar, for example, a ferric chloride solution can be used as the etching solution for the substrate 31 for the metal mask.

When the metal mask base material 31 is etched from the first surface 31a of the second resist pattern 35 before the etching of the metal mask base material 31 is started, The second protective layer 36 is formed on the surface opposite to the surface that is in contact with the second protective layer 36. [

The second protective layer 36 is a layer for preventing the metal mask base 31 from being etched from the second surface 31b when the metal mask base 31 is etched from the first surface 31a to be. The material for forming the second protective layer 36 may be any material having resistance to the etching solution of the metal mask base material 31.

The second protective layer 36 is removed from the second resist pattern 35 after the etching of the metal mask base material 31 using the first resist pattern 34 is completed, The first resist pattern 34 is removed from the first surface 31a.

As shown in Fig. 11, the metal mask base material 31 is etched from the second surface 31b by using the second resist pattern 35. Then, as shown in Fig. 11 shows the state of the metal mask base 31 during the etching of the metal mask base 31 from the second surface 31b. If the substrate 31 for the metal mask is made of Invar, for example, a ferric chloride solution can be used as the etching solution for the substrate 31 for the metal mask.

When the metal mask base material 31 is etched from the second surface 31b, it is preferable to etch the metal mask base material 31 from the first surface 31a of the metal mask base material 31 before starting the etching of the metal mask base material 31 And the first protective layer 37 are formed.

The first protective layer 37 is a layer for preventing the metal mask base 31 from being etched from the first surface 31a when the metal mask base 31 is etched from the second surface 31b. to be. The material for forming the first protective layer 37 may be any material having resistance to the etching solution of the metal mask base material 31. [

After the etching of the metal mask base material 31 using the second resist pattern 35 is completed, the first passivation layer 37 is removed from the first surface 31a of the metal mask base material 31, And the second resist pattern 35 is removed from the second surface 31b. Thereby, the vapor-deposited metal mask 10 can be obtained.

When the metal mask base material 31 is etched from the second surface 31b, the etching rate of the metal mask base material 31 is higher as the area exposed from the second resist pattern 35 is larger. The etching rate at the portion of the metal mask base 31 which overlaps with the gap 35c of the second pattern element 35b in the thickness direction of the metal mask base 31 is smaller than the etching rate at the portion overlapping the gap 35c of the second pattern element 35b, (35b) is high.

As a result, a portion having a large etching amount and a portion having a small etching amount are formed in the metal mask base material 31. As a result, the minimum value T1m in the thickness of the first mask element 21 with respect to the maximum value T2M in the thickness of the second mask element 22 in the cross section orthogonal to the first direction D1, Of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 is not less than 70% and the ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wm2 of the second mask hole width Wm2 is not less than 41% 10) can be obtained.

[Example]

Examples and Comparative Examples will be described with reference to Figs. 12 to 14. Fig. In Examples 1 to 3 described below, the thicknesses of the metal mask base materials used in the production of the vapor-deposition metal masks in the respective Examples are different from each other. The ratio of the minimum value T2m to the minimum value Wm2 of the second mask hole width Wm2 and the ratio of the maximum value T2m to the minimum value Wm2 of the second mask hole width Wm2, And the maximum value T1M with respect to the minimum value Wmm1 of the first mask hole width Wm1 are substantially equal between the embodiments. Therefore, the vapor-deposition metal masks according to the first to third embodiments will be described with reference to one drawing for convenience.

In Comparative Examples 1, 3, and 5, the thicknesses of the metal mask base materials used in the production of the vapor deposition metal masks in the respective comparative examples are different from each other. The ratio of the minimum value T2m to the minimum value Wm2 of the second mask hole width Wm2 and the ratio of the maximum value T2m to the minimum value Wm2 of the second mask hole width Wm2, And the maximum value T1M with respect to the minimum value Wmm1 of the first mask hole width Wm1 are almost equal between the comparative examples. Therefore, the metal masks of Comparative Examples 1, 3, and 5 will be described with reference to one drawing for convenience.

In Comparative Examples 2, 4 and 6, the thicknesses of the metal mask base materials used in the production of the vapor deposition metal masks in the respective comparative examples are different from each other. The ratio of the minimum value T2m to the minimum value Wm2 of the second mask hole width Wm2 and the ratio of the maximum value T2m to the minimum value Wm2 of the second mask hole width Wm2, And the maximum value T1M with respect to the minimum value Wmm1 of the first mask hole width Wm1 are almost equal between the comparative examples. Therefore, the metal masks of Comparative Examples 2, 4 and 6 will be described with reference to one drawing for convenience.

[Example 1]

And a substrate for a metal mask having a thickness of 30 mu m was also prepared. A negative type dry film resist is applied to the first surface of the substrate for a metal mask to form a first resist layer on the first surface of the substrate for a metal mask and a negative type dry film resist is applied to the second surface of the substrate for a metal mask Thereby forming a second resist layer on the second surface of the substrate for a metal mask.

The first resist layer was patterned to form a first resist pattern having the following shape. The first pattern element along the first direction is located at a pitch of 195 mu m and the length of the first pattern element along the first direction is 30.0 mu m, Was 33.5 탆. In the first resist pattern, the length of the second pattern element along the second direction was 64.0 占 퐉.

The second resist layer was patterned to form a second resist pattern having the following shape. In the second resist pattern, the pitch at which the first pattern element along the first direction is located is 195 占 퐉, the length of the first pattern element along the first direction is 16.5 占 퐉, Of 58.3 mu m. In the second resist pattern, the length of the second pattern element along the second direction was 39.1 mu m, and the length of the gap of the second pattern element was 10.3 mu m. That is, of the second pattern elements, the length along the second direction was 14.4 占 퐉 in each of the two portions located with the gap along the second direction.

Then, the substrate for a metal mask was etched using a ferric chloride solution to obtain an evaporation-resistant metal mask of Example 1. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 195 m.

12, the thickness of the first mask element 21 has a minimum value T1m and the thickness of the second mask element 22 is a maximum value in the cross section orthogonal to the first direction D1 (T2M), and it was confirmed that the minimum value (T1m) was 12.5 占 퐉 and the maximum value (T2M) was 17.7 占 퐉. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 70.6%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.4%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 42.6 占 퐉 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2 was 41.5%.

In the first embodiment, as described earlier with reference to Fig. 5, it was confirmed that the first mask element 21 has a substantially pentagonal shape in a cross section orthogonal to the second direction D2. It was also confirmed that the first mask element 21 had a maximum value T1M and the maximum value T1m was 12.5 占 퐉. The ratio of the maximum value T1M to the first pitch P1 is 6.4% or less because the first pitch P1 in which the plurality of mask holes are arranged along the first direction D1 is 195 占 퐉, .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 167.9 占 퐉 and the minimum value Wmm1 of the first mask hole width Wm1 is in the cross section orthogonal to the second direction D2. , The ratio of the maximum value T1M to the maximum value T1M was 7.4%.

[Example 2]

And a substrate for a metal mask having a thickness of 25 mu m was also prepared. A metal mask of Example 2 was obtained in the same manner as in Example 1 except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 162.5 탆.

In the first resist pattern, the pitch at which the first pattern element along the first direction is located is 162.5 占 퐉, the length of the first pattern element along the first direction is 25 占 퐉, Was 27.9 mu m in length. In the first resist pattern, the length of the second pattern element along the second direction was 53.3 占 퐉.

In the second resist pattern, the pitch at which the first pattern element along the first direction is located is 162.5 占 퐉, the length of the first pattern element along the first direction is 13.8 占 퐉, Was 48.6 mu m in length. In the second resist pattern, the length of the second pattern element along the second direction was 32.6 占 퐉, and the length of the gap of the second pattern element was 8.6 占 퐉. That is, of the second pattern elements, the length along the second direction in each of the two portions located with the gap along the second direction was 12.0 占 퐉.

12, in the vapor-depositing metal mask 10 of the second embodiment, the minimum value T1m in the thickness of the first mask element 21 in the cross section orthogonal to the first direction D1 is 10.4 占 퐉, and the maximum value T2M in the thickness of the second mask element 22 is 14.8 占 퐉. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 70.3%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.4%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 35.8 占 퐉 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2 was 41.3%.

The maximum value T1M of the thickness of the first mask element 21 in the cross section orthogonal to the second direction D2 is 10.4 占 퐉 in the vapor deposition metal mask 10 of the second embodiment . It is confirmed that the ratio of the maximum value T1M to the first pitch P1 is 6.4% since the first pitch P1 in which the plurality of mask holes 11 are arranged along the first direction D1 is 162.5 mu m .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 139.0 占 퐉 and the minimum value Wmm1 of the first mask hole width Wm1 is the cross- , The ratio of the maximum value T1M to the maximum value T1M was 7.5%.

[Example 3]

And a substrate for a metal mask having a thickness of 20 mu m was also prepared. The same procedure as in Example 1 was carried out except that the dimensions of the first resist pattern and the dimensions of the second resist pattern were changed as follows. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 130 m.

The first pattern element along the first direction is 130 占 퐉 in pitch and the first pattern element along the first direction has a length of 20 占 퐉 and the first pattern element along the first direction has a pitch of 130 占 퐉, Was 22.3 탆. In the first resist pattern, the length of the second pattern element along the second direction was 42.7 占 퐉.

The first pattern element along the first direction is 130 占 퐉 in pitch, the first pattern element along the first direction has a length of 11 占 퐉, and the first pattern element along the first direction has a pitch of 130 占 퐉, Was 38.9 mu m. In the second resist pattern, the length of the second pattern element along the second direction was 26.1 mu m, and the length of the gap of the second pattern element was 6.9 mu m. That is, of the second pattern elements, the length along the second direction was 9.6 占 퐉 in each of the two portions located with the gap along the second direction.

12, in the vapor-depositing metal mask 10 of the third embodiment, the minimum value T1m in the thickness of the first mask element 21 in the cross section orthogonal to the first direction D1 is 8.8 mu m, and the maximum value T2M in the thickness of the second mask element 22 was 11.9 mu m. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 73.9%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.8%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 28.4 占 퐉 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2 was 41.9%.

The maximum value T1M of the thickness of the first mask element 21 in the cross section orthogonal to the second direction D2 is 8.8 mu m in the vapor-deposition metal mask 10 of the third embodiment . It is confirmed that the ratio of the maximum value T2M to the first pitch P1 is 6.8% because the first pitch P1 in which the plurality of mask holes 11 are arranged along the first direction D1 is 130 占 퐉. .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 112.2 占 퐉 and the minimum value Wmil1 of the first mask hole width Wm1 is a cross section perpendicular to the second direction D2. Was found to be 7.8%.

[Comparative Example 1]

And a substrate for a metal mask having a thickness of 30 mu m was also prepared. Except for changing the dimensions of the first resist pattern and the dimensions of the second resist pattern as described below and forming the second resist pattern having pattern elements not having gaps as the second pattern elements, The metal mask of Comparative Example 1 was obtained in the same manner as in Example 1. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 195 m.

In the first resist pattern, the pitch at which the first pattern element along the first direction is located is 195 占 퐉, the length of the first pattern element along the first direction is 27.9 占 퐉, Was 36.6 탆. In the first resist pattern, the length of the second pattern element along the second direction was 60.9 占 퐉.

In the second resist pattern, the pitch at which the first pattern element along the first direction is located is 195 占 퐉, the length of the first pattern element along the first direction is 5.2 占 퐉, Was 76.9 mu m. In the second resist pattern, the length of the second pattern element along the second direction was 20.6 占 퐉.

As shown in Fig. 13, in the vapor-depositing metal mask 40 of the comparative example 1, the thickness of the first mask element 41 has a minimum value T1m on a cross section orthogonal to the first direction D1, It was also confirmed that the thickness of the second mask element 42 had a maximum value T2M and that the minimum value T1m was 9.7 占 퐉 and the maximum value T2M was 20.8 占 퐉. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 46.6%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.0%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 42.3 占 퐉 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2 was 49.2%.

In Comparative Example 1, it was confirmed that the first mask element 41 had a substantially pentagonal shape on the cross section orthogonal to the second direction D2, as in the first embodiment. It was also confirmed that the first mask element 41 had the maximum value T1M and the maximum value T1M was 9.7 mu m. As described above, the ratio of the maximum value T1M to the first pitch P1 is less than 5.0% because the first pitch P1 in which the plurality of mask holes are arranged along the first direction D1 is 195 占 퐉, .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 165.9 占 퐉 and the minimum value Wmil1 of the first mask hole width Wm1 is a cross section orthogonal to the second direction D2. Was found to be 5.8%.

[Comparative Example 2]

And a substrate for a metal mask having a thickness of 30 mu m was also prepared. A metal mask of Comparative Example 2 was obtained in the same manner as in Example 1 except that the dimensions of the second resist pattern were changed as follows. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 195 m.

That is, in the second resist pattern, the pitch at which the first pattern element along the first direction is located is 195 占 퐉, the length of the first pattern element along the first direction is 16.5 占 퐉, The length of the pattern element was 58.3 탆. In the second resist pattern, the length of the second pattern element along the second direction was 39.2 占 퐉, and the length of the gap of the second pattern element was 14.4 占 퐉. That is, of the second pattern elements, the length along the second direction was 12.4 占 퐉 in each of the two portions positioned with the gap along the second direction.

As shown in Fig. 14, in the vapor-deposition metal mask 50 of Comparative Example 2, the thickness of the first mask element 51 has a minimum value T1m on a cross section orthogonal to the first direction D1, It was also confirmed that the thickness of the second mask element 52 had a maximum value T2M and that the minimum value T1m was 10.4 占 퐉 and the maximum value T2M was 12.7 占 퐉. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 81.9%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.3%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 42.6 占 퐉 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2 was 29.8%.

In Comparative Example 2, it was confirmed that the first mask element 51 had a substantially pentagonal shape in a cross section orthogonal to the second direction D2, as in the first embodiment. It was also confirmed that the first mask element 51 had a maximum value T1M and the maximum value T1m was 10.4 占 퐉. As described above, the ratio of the maximum value T1M to the first pitch P1 is 5.3%, because the first pitch P1 in which the plurality of mask holes are arranged along the first direction D1 is 195 占 퐉, .

The minimum value Wmm1 of the first mask hole width Wm1 is 165.6 占 퐉 and the maximum value of the minimum value Wm1 of the first mask hole width Wm1 (T1M) was 6.3%.

[Comparative Example 3]

And a substrate for a metal mask having a thickness of 25 mu m was also prepared. Except for changing the dimensions of the first resist pattern and the dimensions of the second resist pattern as described below and forming the second resist pattern having pattern elements not having gaps as the second pattern elements, The metal mask of Comparative Example 3 was obtained in the same manner as in Example 2. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 162.5 탆.

In the first resist pattern, the pitch at which the first pattern element along the first direction is located is 162.5 占 퐉, the length of the first pattern element along the first direction is 25 占 퐉, Was 30.5 탆. In the first resist pattern, the length of the second pattern element along the second direction was 50.8 占 퐉.

The first pattern element along the first direction has a pitch of 162.5 占 퐉 and the length of the first pattern element along the first direction is 4.3 占 퐉; Was 64.1 탆. In the second resist pattern, the length of the second pattern element along the second direction was 17.2 占 퐉.

As shown in Fig. 13, in the vapor-deposition metal mask 40 of the comparative example 3, the minimum value T1m in the thickness of the first mask element 41 on the cross section orthogonal to the first direction D1 is 8.0 탆, and the maximum value T2M in the thickness of the second mask element 42 was 17.4 탆. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 46.0%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 4.9%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 35.1 占 퐉 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2 was 49.6%.

The maximum value T1M in the thickness of the first mask element 41 is 8.0 mu m in the cross section orthogonal to the second direction D2 in the vapor deposition metal mask 40 of the comparative example 3 . Since the first pitch P1 in which the plurality of mask holes 43 are arranged along the first direction D1 is 162.5 占 퐉, the ratio of the maximum value T1M to the first pitch P1 is 4.9% .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 138.5 占 퐉 and the minimum value Wmil1 of the first mask hole width Wm1 is a cross section perpendicular to the second direction D2. Was found to be 5.8%.

[Comparative Example 4]

And a substrate for a metal mask having a thickness of 25 mu m was also prepared. In addition, a vapor-deposited metal mask of Comparative Example 4 was obtained in the same manner as in Example 2, except that the dimensions of the second resist pattern were changed as follows. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 162.5 탆.

That is, in the second resist pattern, the pitch at which the first pattern element along the first direction is located is 162.5 占 퐉, the length of the first pattern element along the first direction is 13.8 占 퐉, The length of the pattern element was 48.6 탆. In the second resist pattern, the length of the second pattern element along the second direction was 32.7 占 퐉, and the length of the gap of the second pattern element was 12.0 占 퐉. That is, of the second pattern elements, the length along the second direction in each of the two portions positioned with the gap along the second direction was 10.3 占 퐉.

14, in the vapor-depositing metal mask 50 of the comparative example 4, the minimum value T1m in the thickness of the first mask element 51 on the cross section orthogonal to the first direction D1 is 8.3 mu m, and the maximum value T2M in the thickness of the second mask element 52 was 10.4 mu m. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 79.8%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.1%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 35.2 占 퐉 and the ratio of the maximum value T1M to the minimum value Wm2 of the second mask hole width Wm2 was 29.5%.

The maximum value T1M of the thickness of the first mask element 51 on the cross section orthogonal to the second direction D2 is 8.3 占 퐉 in the vapor deposition metal mask 50 of the comparative example 4 . It is confirmed that the ratio of the maximum value T1M to the first pitch P1 is 5.1% since the first pitch P1 in which the plurality of mask holes 53 are arranged along the first direction D1 is 162.5 mu m .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 138.0 占 퐉 and the minimum value Wmil1 of the first mask hole width Wm1 is in the cross section orthogonal to the second direction D2. Was found to be 6.0%.

[Comparative Example 5]

And a substrate for a metal mask having a thickness of 20 mu m was also prepared. Except for changing the dimensions of the first resist pattern and the dimensions of the second resist pattern as described below and forming the second resist pattern having pattern elements not having gaps as the second pattern elements, A metal mask of Comparative Example 5 was obtained in the same manner as in Example 3. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 130 m.

The first pattern element along the first direction is 130 占 퐉 in pitch and the first pattern element along the first direction has a length of 20 占 퐉 and the first pattern element along the first direction has a pitch of 130 占 퐉, Was 24.4 탆. In the first resist pattern, the length of the second pattern element along the second direction was 40.6 占 퐉.

The first pattern element along the first direction is located at a pitch of 130 占 퐉 and the length of the first pattern element along the first direction is 3.5 占 퐉; Was 51.3 mu m in length. In the second resist pattern, the length of the second pattern element along the second direction was 17.2 占 퐉.

As shown in Fig. 13, in the vapor-depositing metal mask 40 of the comparative example 5, the minimum value T1m in the thickness of the first mask element 41 on the cross section orthogonal to the first direction D1 is 7.0 μm, and the maximum value T2M in the thickness of the second mask element 42 was 13.7 μm. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 51.1%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.4%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 27.7 占 퐉 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2 was 49.5%.

The maximum value T1M in the thickness of the first mask element 41 is 7.0 mu m in the cross section orthogonal to the second direction D2 in the vapor deposition metal mask 40 of the fifth embodiment . Since the first pitch P1 in which the plurality of mask holes 43 are arranged along the first direction D1 is 130 占 퐉, the ratio of the maximum value T1M to the first pitch P1 is 5.4% .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 110.6 占 퐉 and the minimum value Wm1 of the first mask hole width Wm1 is the cross- Was found to be 6.3%.

[Comparative Example 6]

And a substrate for a metal mask having a thickness of 20 mu m was also prepared. The same procedure as in Example 3 was carried out except that the dimensions of the second resist pattern were changed as follows. A first pitch P1 where a plurality of mask holes are located along a first direction and a second pitch P2 where a plurality of mask holes are located along a second direction when viewed from a plane facing the first surface, Was 130 m.

That is, in the second resist pattern, the pitch at which the first pattern element along the first direction is located is 130 占 퐉, the length of the first pattern element along the first direction is 11.0 占 퐉, The length of the pattern element was 38.9 mu m. In the second resist pattern, the length of the second pattern element along the second direction was 26.1 mu m, and the length of the gap of the second pattern element was 9.6 mu m. That is, of the second pattern elements, the length along the second direction in each of the two portions positioned with the gap along the second direction was 8.3 탆.

14, in the vapor-deposition metal mask 50 of the comparative example 6, the minimum value T1m in the thickness of the first mask element 51 in the cross section orthogonal to the first direction D1 is 7.3 탆, and the maximum value T2M in the thickness of the second mask element 52 was 8.2 탆. In short, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 89.0%. It was also confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.6%.

It was also confirmed that the minimum value Wm2 of the second mask hole width Wm2 was 28.1 占 퐉 and the ratio of the maximum value T1M to the minimum value Wm2 of the second mask hole width Wm2 was 29.2%.

It was also confirmed that the maximum value T1M of the second mask element 52 on the cross section orthogonal to the second direction D2 was 7.3 占 퐉 in the vapor deposition metal mask 50 of Comparative Example 6. It is confirmed that the ratio of the maximum value T1M to the first pitch P1 is 5.6% since the first pitch P1 in which the plurality of mask holes 53 are arranged along the first direction D1 is 130 占 퐉. .

It is also confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 110.0 占 퐉 and the minimum value Wmm1 of the first mask hole width Wm1 is in the cross section orthogonal to the second direction D2. Was found to be 6.6%.

[evaluation]

Immediately after each vapor-deposited metal mask was manufactured, it was evaluated whether or not the vapor-deposited metal mask was folded in the direction in which the first mask element continued. As described above, in each of the examples and comparative examples, the minimum value T2m, the minimum value T1m, and the minimum value T2m for the cross section in the direction orthogonal to the first direction D1 Of the second mask hole width Wm2 and the minimum value Wm2 of the second mask hole width Wm2 and the ratio of the maximum value T2M to the minimum value Wm2 of the second mask hole width Wm2, The ratio of the minimum value (T1m) was the value shown in Table 1 below. In each of the examples and comparative examples, the maximum value T1M on the cross section orthogonal to the second direction D2, the ratio of the maximum value T1M to the first pitch P1, the ratio of the first mask hole width The ratio of the minimum value Wmm1 of the first mask hole width Wm1 to the maximum value T1M with respect to the minimum value Wmm1 of the first mask hole width Wm1 was the values shown in Table 1 below.

It was confirmed that no folding occurred in the direction in which the first mask element 21 continued in the vapor-depositing metal mask 10 of the first to third embodiments. On the other hand, in the vapor-deposition metal mask 40 of Comparative Example 1, the vapor-deposition metal mask 40 of Comparative Example 3, and the vapor-deposition metal mask 40 of Comparative Example 5, It was confirmed that the folding in the direction of the metal mask 40 occurred almost all over the metal mask 40. In the vapor-deposition metal mask 50 of Comparative Example 2, the vapor-deposition metal mask 50 of Comparative Example 4, and the vapor-deposition metal mask 50 of Comparative Example 6, It is confirmed that the folding in the direction of the metal mask 50 is generated in a part of the metal mask 50.

As described above, the ratio of the minimum value T1m to the maximum value T2M is 70% or more and the minimum value (Wm2) of the second mask hole width Wm2 in the vapor-deposition metal mask 10 of each embodiment It was confirmed that when the ratio of the maximum value T2M was 41% or more, the folding in the direction in which the first mask element 21 continued was suppressed.

On the contrary, the second mask hole width Wm2 in the vapor-deposition metal mask 40 of Comparative Example 1, the vapor-deposition metal mask 40 of Comparative Example 3, and the vapor-deposition metal mask 40 of Comparative Example 5, The ratio of the minimum value Tm to the maximum value T2M is less than 70% although the ratio of the maximum value T2M to the minimum value Wm2 of the maximum value T2M is not less than 41%. Therefore, in the metal mask 40, the strength of the portion following the first mask element 41 is higher than that of the other portions, , And as a result, it is considered that the folding of the entire surface of the metal mask 40 is caused.

It is to be noted that the minimum value T1m for the maximum value T2M in the deposition metal mask 50 of Comparative Example 2, the deposition metal mask 50 of Comparative Example 4, and the deposition metal mask 50 of Comparative Example 6, The maximum value T2M for the minimum value Wmm2 of the second mask hole width Wm2 is not more than 70% and the deviation of the thickness at the cross section orthogonal to the first direction D1 is suppressed. Is less than 41%. Therefore, in each of the vapor-deposition metal masks 50, the strength at the portion following the first mask element 51 is greater than the strength at the other portions, And consequently, it is considered that folding occurs in a part of the vapor-deposition metal mask 50. As a result,

As described above, according to the embodiment of the vapor deposition metal mask, the following effects can be obtained.

(1) Since the variation in the thickness of the metal mask 10 is suppressed, it is possible to prevent the occurrence of folding in the portion following the first mask element 21, , The difference in strength between the portion where the first mask element 21 is continued and the remaining portion is suppressed. Therefore, the folding along the direction in which the mask holes 11 are arranged is suppressed from occurring in the vapor-deposition metal mask 10.

(2) Since the ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wm2 of the second mask hole width Wm2 is 41% or more, The strength of the first mask element 21 is such that the folding is not concentrated in the first mask element 21 as compared with the other portions of the metal mask 10.

(3) Even when the size of the first pitch P1 is changed, that is, even when the size of the space included in the first pitch P1 is changed, the maximum value T1M in the thickness of the first mask element 21 is smaller than the predetermined Size. Therefore, occurrence of folding in the first mask element 21 out of the vapor-deposition metal mask 10 is suppressed.

(4) In the configuration in which the thickness of the first mask element 21 is secured to 12.5 占 퐉 or more, the thickness of the first mask element 21 is reduced to a degree that the occurrence of folding in the portion following the first mask element 21 is suppressed. , The difference in strength between the portion where the first mask element 21 is continued and the remaining portion is further suppressed.

(5) Since the ratio of the maximum value T1M in the thickness of the first mask element 21 to the minimum value Wmm1 of the first mask hole width Wm1 is 7% or more, The strength of the first mask element 21 is such that the folding of the first mask element 21 is not concentrated more than the other portions of the metal mask 10.

(6) In the vapor deposition metal mask 10 in which the plurality of mask holes 11 are arranged in a staggered arrangement, the folding along the direction in which the mask holes 11 are arranged can be suppressed.

The above-described embodiment may be modified as appropriate as follows.

15, in the vapor-deposition metal mask 60, a plurality of mask holes 61 are formed in the first direction D1 and the second direction 60 as viewed in a plane facing the first surface 60a, The positions of the plurality of mask holes 61 constituting each row in the first direction D1 may be the same in all the rows. That is, the plurality of mask holes 61 may be arranged in a four-sided lattice pattern.

The first width W1 of the first mask element 62 may be smaller than the second width W2 of the second mask element 63. [ The minimum value T1m of the thickness of the first mask element 62 with respect to the maximum value T2M in the thickness of the second mask element 63 in the cross section orthogonal to the first direction D1 The ratio of the maximum value T2M in the thickness of the second mask element 63 to the minimum value Wmm2 of the second mask hole width Wm2 in the first opening 11a is not more than 70% % Or more. According to such a vapor deposition metal mask 60, the same effects as those of the above-described (1) and (2) can be obtained.

The ratio of the maximum value T1M in the thickness of the first mask element 21 to the minimum value Wmm1 of the first mask hole width Wm1 in the cross section orthogonal to the second direction D2 is less than 7% It may be small. Even in such a configuration, the ratio of the minimum value T1m of the first mask element 21 to the maximum value T2M of the second mask element 22 is 70% or more on the cross section orthogonal to the first direction D1, The ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 in the first opening 11a may be 41% or more. Accordingly, the same effect as the above-described (1) and (2) can be obtained.

A maximum value T2M (T2M) in the thickness of the first mask element 21 in the cross section orthogonal to the second direction D2 with respect to the first pitch P1 in the cross section orthogonal to the first direction D1 ) May be smaller than 6%. Even in such a configuration, the ratio of the minimum value T1m of the first mask element 21 to the maximum value T2M of the second mask element 22 is 70% or more on the cross section orthogonal to the first direction D1, The ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 in the first opening 11a may be 41% or more. Accordingly, the same effect as the above-described (1) and (2) can be obtained.

In the section perpendicular to the first direction D1, the minimum value T1m in the thickness of the first mask element 21 may be smaller than 12.5 占 퐉. Even in such a configuration, the ratio of the minimum value T1m of the first mask element 21 to the maximum value T2M of the second mask element 22 is 70% or more on the cross section orthogonal to the first direction D1, The ratio of the maximum value T2M in the thickness of the second mask element 22 to the minimum value Wmm2 of the second mask hole width Wm2 in the first opening 11a may be 41% or more. Accordingly, the same effect as the above-described (1) and (2) can be obtained.

The step of forming the second hole element 11d constituting the mask hole 11 is carried out by using the second resist pattern 35 to form the first arcuate element dp1 and the second arcuate element dp2, Is not limited to the step in which the arc-shaped element dp2 is formed at the same time, but may be constituted by the following steps. For example, in the step of forming the second hole element 11d, first, a resist pattern for forming two second arcuate elements dp2 sandwiching the first arcuate element dp1 is sandwiched by a metal mask The base material 31 for a metal mask is etched by using the resist pattern. Next, after the resist pattern used for etching is peeled from the metal mask base material 31, a resist pattern for forming the first arcuate dp1 is placed on the metal mask base material 31, and the resist pattern is used So that the metal mask base material 31 is etched. Thus, the second hole element 11d can be formed. As described above, it is possible to form the second hole element 11d by repeating formation of the resist pattern and etching of the metal mask base material 31 twice.

The second hole element 11d constituting the mask hole 11 can be formed by repeating formation of the resist pattern and etching of the metal mask base material 31 three times or more. For example, it is possible to form each of the first arcuate element dp1 and the second arcuate element dp2 constituting one second hall element 11d by using different resist patterns . In this case, the formation of the resist pattern and the etching of the metal mask base material 31 are repeated three times, so that the second hole element 11d can be formed.

The thickness of the metal mask base material 31 may be thinner than 20 탆, for example, 10 탆 or more and less than 20 탆. When such a metal mask base material 31 is used, it is possible to form a mask hole having a desired shape by simply etching the metal mask base material 31 from the second surface 31b. The metal mask base material 31 having a thickness of 10 mu m or more and less than 20 mu m has a higher hardness than that of the vapor deposition metal mask 10 capable of being formed by the base material 31 for a metal mask having a thickness of 20 mu m or more, (High definition) phosphorus-containing metal mask 10 according to the present invention.

When the metal mask base material 31 is used, the first resist layer 32 is formed on the first surface 31a of the metal mask base material 31 by the above- And the formation of the first resist pattern 34 from the first resist layer 32 can be omitted. In this case, etching of the metal mask base material 31 using the first resist pattern 34 may be omitted, thereby forming the second protective layer 36, 1 protective layer 37 may be omitted.

Thus, when the metal mask base material 31 having a thickness of 10 mu m or more and less than 20 mu m is used, the deposition metal mask 10 can be obtained by the following steps. That is, by forming the resist layer on the second surface 31b of the metal mask base material 31, forming a resist pattern from the resist layer, and etching the metal mask base material by using the resist pattern, The wear metal mask 10 can be manufactured. While the metal mask base material 31 is being processed into the vapor deposition metal mask 10, the support member for supporting the metal mask base material 31 may be bonded to the metal mask base material 31 do.

In the vapor deposition metal mask 10 manufactured through such a process, the second mask hole width in the second opening is the largest in the cross section orthogonal to the first direction D1, 2 The mask hole width is the smallest. The second mask hole width gradually becomes smaller from the second opening toward the first opening. Therefore, the ratio of the maximum value T2M in the thickness of the second mask element 22 to the width of the second mask hole in the first opening may be 41% or more.

· The deposition metal mask is not limited to the deposition metal mask used in the production of the organic EL display, but it is also possible to form the evaporation metal mask used for the production of other display devices, the wiring provided by various devices, Or a vapor-deposited metal mask used for vapor-depositing a functional layer or the like.

10, 40, 50, 60: Thick metal mask
10a, 31a, 60a: a first side
10b, 31b: second side
11, 43, 53, 61: mask holes
11a: first opening
11b: second opening
11c: first hole element
11cp: first inner circumferential surface
11d: second hole element
11dp: the second inner peripheral surface
11e: continuous element
21, 41, 51, 62: a first mask element
22, 42, 52, 63: a second mask element
31: substrate for metal mask
32: first resist layer
33: Second resist layer
34: First resist pattern
34a, 35a: first pattern element
34b, 35b: second pattern element
35: second resist pattern
35c: clearance
36: Second protective layer
37: First protective layer
cp1, dp1: First phase element
dp2: Secondary element
dp3: Inflection element
R1: mask area
R2: peripheral region

Claims (4)

1. A vapor deposition metal mask having a plurality of mask holes arranged in a first direction and in a second direction orthogonal to the first direction,
Wherein the vapor deposition metal mask has a first surface and a second surface,
Wherein each of the mask holes has a first opening that is open to the first surface and a second opening that opens to the second surface,
Wherein the elements of the deposition-enhancing metal mask for partitioning the respective mask holes are,
Two first mask elements facing each other in the first direction and two second mask elements facing each other in the second direction,
The first mask element and the mask hole are alternately repeated one by one along the first direction and the second mask element and the mask hole are alternately repeated one by one along the second direction,
Wherein a width of the first mask element along the first direction is smaller than a width of the second mask element along the second direction,
Wherein a ratio of a minimum value in a thickness of the first mask element to a maximum value in a thickness of the second mask element is 70% or more in a cross section orthogonal to the first direction,
The width of the mask hole in the cross section orthogonal to the first direction is the width of the mask hole in the first opening and the width of the mask hole in the first opening is the width of the mask hole in the second opening, Smaller,
The ratio of the maximum value in the thickness of the second mask element to the minimum value of the mask hole width between the first opening and the second opening is 41%
Metal mask with vapor. The method according to claim 1,
Wherein the plurality of mask holes are arranged at a constant pitch along the first direction,
Wherein the ratio of the maximum value to the pitch is 6% or more, and the maximum value is a maximum value in the thickness of the first mask element at a cross section orthogonal to the second direction
Metal mask with vapor. 3. The method according to claim 1 or 2,
Wherein a width of the mask hole in the mask hole is a width of a second mask hole having a mask hole width along the second direction and a width of the mask hole in a cross section perpendicular to the second direction is larger than a width of the mask along the first direction, The width of the first mask hole in the first opening is smaller than the width of the first mask hole in the second opening,
The ratio of the maximum value in the thickness of the first mask element to the minimum value of the width of the first mask hole between the first opening and the second opening is 7%
Metal mask with vapor. 4. The method according to any one of claims 1 to 3,
The plurality of mask holes are arranged in a staggered arrangement in a direction orthogonal to a direction in which the vapor-deposition metal mask is widened
Metal mask with vapor.

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