JP2022031239A - Vapor deposition mask and method for manufacturing the same - Google Patents

Abstract

To provide a vapor deposition mask capable of suppressing the occurrence of a shadow while preventing a defect, such as deformation from occurring.SOLUTION: A vapor deposition mask includes: a metal plate including a first surface and a second surface positioned on the side opposite to the first surface; open holes 25 penetrated from the first surface side of the metal plate to the second surface side thereof; and a flat region 52 positioned between two open holes 25 adjacent to each other when viewed from the second surface side. The open holes 25 are arranged zigzag in first and second directions in the plan view; the flat region 52 includes a first flat region 53 positioned on the one side of a first center line and a second flat region 54 positioned on the other side of the first center line; the first center line passes the central point of the two open holes 25 adjacent to each other in the first direction; the first flat region 53 includes a portion in which the size of the first flat region 53 in the first direction increases as it goes away from the first center line; and the second flat region 54 includes a portion in which the size of the second flat region 54 in the first direction increases as it goes away from the first center line.SELECTED DRAWING: Figure 5A

Description

The embodiments of the present disclosure relate to a vapor deposition mask and a method for manufacturing the vapor deposition mask.

The display device used in a portable device such as a smartphone or a tablet PC preferably has high definition, and for example, the pixel density is preferably 400 ppi or more. There is an increasing demand for portable devices to support ultra high definition (UHD), and in this case, it is preferable that the pixel density of the display device is, for example, 800 ppi or more.

Among display devices, organic EL display devices are attracting attention because of their good responsiveness, low power consumption, and high contrast. As a method of forming pixels of an organic EL display device, a method of forming pixels in a desired pattern by using a vapor deposition mask in which through holes arranged in a desired pattern are formed is known. Specifically, first, a vapor deposition mask is combined with a substrate for an organic EL display device. Subsequently, the thin-film deposition material containing the organic material is attached to the substrate through the through holes of the thin-film deposition mask. By carrying out such a thin-film deposition step, it is possible to form a pixel having a thin-film deposition layer containing a thin-film deposition material on the substrate with a pattern corresponding to the pattern of the through holes of the thin-film deposition mask.

As a method for manufacturing a mask, a method of forming a through hole in a metal plate by etching using a photolithography technique is known. For example, first, the first surface resist layer is formed on the first surface of the metal plate, and the second surface resist layer is formed on the second surface of the metal plate. Next, a region of the first surface of the metal plate that is not covered by the first surface resist layer is etched to form a first concave portion on the first surface of the metal plate. Then, a region of the second surface of the metal plate that is not covered by the second surface resist layer is etched to form a second recess on the second surface of the metal plate. At this time, by performing etching so that the first recess and the second recess communicate with each other, a through hole penetrating the metal plate can be formed.

Japanese Unexamined Patent Publication No. 2014-148745

In the vapor deposition step, a part of the vapor deposition material from the vapor deposition source to the vapor deposition mask moves in a direction inclined with respect to the normal direction of the metal plate constituting the vapor deposition mask. The thin-film deposition material that moves in a direction inclined with respect to the normal direction of the metal plate does not pass through the through-hole of the vapor-film mask and easily adheres to the wall surface of the through-hole. Therefore, the thickness of the thin-film deposition layer made of the thin-film deposition material adhering to the substrate tends to be thinner as it is closer to the wall surface of the through hole. Such a phenomenon in which the adhesion of the vapor-filmed material to the substrate is hindered by the wall surface of the through hole is also referred to as a shadow.

In one embodiment of the present disclosure, a vapor deposition mask containing two or more through holes is
A metal plate including a first surface and a second surface located on the opposite side of the first surface.
The through hole penetrating from the first surface side to the second surface side of the metal plate,
It comprises a flat region located between the two adjacent through holes when the vapor deposition mask is viewed from the second surface side.
The through holes are staggered in the first direction and the second direction in a plan view.
The flat region includes a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line.
The first center line passes through the center points of two adjacent through holes in the first direction.
The first flat region includes a portion in which the dimension of the first flat region in the first direction increases as the distance from the first center line increases.
The second flat region includes a portion where the dimension of the second flat region in the first direction increases as it moves away from the first center line.

According to the embodiment of the present disclosure, it is possible to suppress the occurrence of shadow while suppressing the occurrence of defects such as deformation in the vapor deposition mask.

It is a top view which shows an example of an organic EL display device. FIG. 3 is a cross-sectional view of the organic EL display device of FIG. 1 as viewed from the II-II direction. It is a figure which shows the vapor deposition apparatus provided with the vapor deposition mask apparatus by one Embodiment of this disclosure. It is a top view which shows an example of the vapor deposition mask apparatus. FIG. 3 is a plan view showing an example of an effective region of the vapor deposition mask of the vapor deposition mask apparatus of FIG. 4 when viewed from the second surface side. It is a top view which shows the penetration area of the through hole of FIG. 5A. This is an example of a cross-sectional view taken along the line AA of the vapor deposition mask of FIG. 5A. It is an example of a cross-sectional view taken along the line BB of the vapor deposition mask of FIG. 5A. It is an example of a cross-sectional view taken along the line CC of the vapor deposition mask of FIG. 5A. It is a top view which shows the 1st flat area and the 2nd flat area of FIG. 5A. It is a schematic diagram for demonstrating an example of the manufacturing method of a thin-film deposition mask as a whole. It is a figure which shows the process of forming a 1st resist layer and a 2nd resist layer on a metal plate. It is a figure which shows the process of patterning a 1st resist layer and a 2nd resist layer. It is a figure which shows the 1st surface etching process. It is a figure which shows the 2nd surface etching process. It is a figure which shows the 2nd surface etching process. It is a top view which shows an example of the 1st flat region and the 2nd flat region of a thin-film deposition mask. It is a top view which shows an example of the 1st flat region and the 2nd flat region of a thin-film deposition mask. It is a top view which shows the case which an example of the effective area of a vapor deposition mask is seen from the 2nd surface side. It is an example of the cross-sectional view along the DD line of the vapor deposition mask of FIG. It is a top view which shows the 1st flat area and the 2nd flat area of FIG. It is sectional drawing which shows an example of the metal plate provided with the patterned 2nd surface resist layer. It is a figure which shows an example of the 2nd surface etching process. It is a figure which shows an example of the 1st surface processing process. It is a figure which shows the structure and the evaluation result of the vapor deposition mask in an Example.

In the present specification and the present drawings, unless otherwise specified, the term "substrate", "base material", "board", "sheet", "film", etc., means a substance that is the basis of a certain composition. , Not distinguished from each other based solely on the difference in designation.

Unless otherwise specified, the present specification and the present drawings specify shapes, geometric conditions, and their degrees, for example, terms such as "parallel" and "orthogonal", length and angle values, and the like. Is not bound by the strict meaning, but is interpreted to include the range in which similar functions can be expected.

In the present specification and the present drawings, unless otherwise specified, a configuration such as a member or a region may be "above" or "below" another configuration such as another member or region. The terms "upper" and "lower", or "upward" and "downward" include cases where one configuration is in direct contact with another. Further, it also includes the case where another configuration is included between one configuration and another configuration, that is, the case where they are indirectly in contact with each other. Unless otherwise specified, the terms "upper", "upper", "upper", or "lower", "lower", and "lower" may be reversed in the vertical direction.

Unless otherwise specified, the same parts or parts having similar functions may be designated by the same reference numerals or similar reference numerals, and the repeated description thereof may be omitted in the present specification and the present drawings. The dimensional ratios in the drawings may differ from the actual ratios for convenience of explanation, or some of the configurations may be omitted from the drawings.

Unless otherwise specified in the present specification and the drawings, one embodiment of the present specification may be combined with other embodiments without any inconsistency. Other embodiments can also be combined to the extent that there is no contradiction.

Unless otherwise specified in the present specification and the present drawings, when a plurality of steps are disclosed with respect to a method such as a manufacturing method, other steps not disclosed are carried out between the disclosed steps. You may. The order of the disclosed steps is arbitrary to the extent that there is no contradiction.

Unless otherwise specified in the present specification and the present drawings, the numerical range represented by the symbol "-" includes numerical values placed before and after the symbol "-". For example, the numerical range defined by the expression "34 to 38% by mass" is the same as the numerical range defined by the expression "34% by mass or more and 38% by mass or less".

Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments alone.

The first aspect of the present disclosure is a thin-film mask comprising two or more through holes.
A metal plate including a first surface and a second surface located on the opposite side of the first surface.
The through hole penetrating from the first surface side to the second surface side of the metal plate,
It comprises a flat region located between the two adjacent through holes when the vapor deposition mask is viewed from the second surface side.
The through holes are staggered in the first direction and the second direction in a plan view.
The flat region includes a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line.
The first center line passes through the center points of two adjacent through holes in the first direction.
The first flat region includes a portion in which the dimension of the first flat region in the first direction increases as the distance from the first center line increases.
The second flat region is a vapor deposition mask that includes a portion in which the dimension of the second flat region in the first direction increases as it moves away from the first center line.

In the second aspect of the present disclosure, the first flat region and the second flat region may be continuous in the vapor deposition mask according to the first aspect described above.

In the third aspect of the present disclosure, in the vapor deposition mask according to the first aspect described above, the first flat region and the second flat region may be discontinuous.

A fourth aspect of the present disclosure is a vapor deposition mask according to each of the above-mentioned first aspect to the above-mentioned third aspect, in which the vapor deposition mask is adjacent in the second direction when the vapor deposition mask is viewed from the second surface side. The two matching through holes may be connected.

A fifth aspect of the present disclosure is that the vapor deposition masks according to each of the above-mentioned first aspect to the above-mentioned third aspect are adjacent to each other in the second direction when the vapor deposition mask is viewed from the second surface side. It may include a third flat region located between the two matching through holes.

A sixth aspect of the present disclosure is that in the vapor deposition mask according to the first aspect described above, the first flat region and the second flat region may be continuous, and the vapor deposition is performed from the second surface side. When looking at the mask, the two adjacent through holes in the second direction may be connected.
The dimension of the portion of the first flat region that overlaps the first center line in the first direction is between the ends of a pair of contours of the first flat region facing the through hole in the first direction. It may be 0.90 times or less the distance in the first direction.

A seventh aspect of the present disclosure is that the first flat region and the second flat region may be continuous in each of the vapor deposition masks according to the first aspect described above or the sixth aspect described above. When the vapor deposition mask is viewed from the second surface side, two adjacent through holes may be connected in the second direction.
The dimension in the third direction of the portion of the flat region that overlaps the third center line is the distance in the third direction between the ends of the pair of contours of the flat region facing the through hole in the third direction. It may be 1.00 times or less of
The third direction may be orthogonal to the first direction.
The third center line may pass through an intermediate point between two adjacent through holes in the first direction and extend in the third direction.

Eighth aspect of the present disclosure is a vapor deposition mask according to each of the above-mentioned first aspect to the above-mentioned third aspect, wherein the through hole is a first recess including a first wall surface located on the first surface side. And a second wall surface located on the second surface side, and a second recess connected to the first recess may be provided.
The second wall surface may include a portion that is displaced toward the center point side of the through hole as it goes from the second surface side to the first surface side.

A ninth aspect of the present disclosure is a vapor deposition mask according to each of the above-mentioned first aspect to the above-mentioned eighth aspect, and the flat region is a reference when observed from the second surface side using a laser microscope. It may exhibit a pixel value greater than or equal to the value.

In the tenth aspect of the present disclosure, in the vapor deposition mask according to each of the first aspect to the ninth aspect described above, the thickness of the flat region may be the same as the thickness of the metal plate.

In the eleventh aspect of the present disclosure, the thickness of the metal plate may be 30 μm or less in the vapor deposition mask according to each of the above-mentioned first aspect to the above-mentioned tenth aspect.

A twelfth aspect of the present disclosure is a method for manufacturing a vapor deposition mask including two or more through holes.
The first surface processing step of forming the first concave portion including the first wall surface on the first surface of the metal plate, and
The region of the second surface of the metal plate located on the opposite side of the first surface, which is not covered by the second surface resist layer, is etched with an etching solution to form a second recess including the second wall surface. The second surface etching step of forming on the second surface is provided.
The through hole includes the first recess and the second recess connected to the first recess.
The second surface etching step is carried out so that a flat region remains between the two adjacent through holes when the vapor deposition mask is viewed from the second surface side.
The through holes are staggered in the first direction and the second direction in a plan view.
The flat region is a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line between two adjacent through holes in the first direction. Including
The first center line passes through the center points of two adjacent through holes in the first direction.
The first flat region includes a portion in which the dimension of the first flat region in the first direction increases as the distance from the first center line increases.
The second flat region is a method for manufacturing a vapor deposition mask, which includes a portion in which the dimension of the second flat region in the first direction increases as the distance from the first center line increases.

A thirteenth aspect of the present disclosure is the method for manufacturing a thin-film deposition mask according to the twelfth aspect described above, wherein the second surface etching step is carried out so that the first flat region and the second flat region are continuous. May be good.

A fourteenth aspect of the present disclosure is the method for manufacturing a thin-film deposition mask according to the twelfth aspect described above, wherein the second surface etching step is performed so that the first flat region and the second flat region are discontinuous. May be done.

A fifteenth aspect of the present disclosure is a method for manufacturing a thin-film deposition mask according to each of the twelfth aspect to the fourteenth aspect described above. When viewed, it may be carried out so that two adjacent through holes adjacent to each other in the second direction are connected to each other.

A sixteenth aspect of the present disclosure is a method for manufacturing a thin-film deposition mask according to each of the twelfth aspect to the fourteenth aspect described above. When viewed, it may be carried out so that the two adjacent through holes in the second direction are not connected to each other.

A seventeenth aspect of the present disclosure is a method for manufacturing a vapor deposition mask according to each of the twelfth aspect to the sixteenth aspect described above, wherein the second surface resist layer corresponds to the first flat region. It may include a region and a second region corresponding to the second flat region.
The first region may include a portion in which the dimension of the first region in the first direction increases as it moves away from the first center line.
The second region may include a portion in which the dimension of the second region in the first direction increases as it moves away from the first center line.

The eighteenth aspect of the present disclosure is a method of manufacturing a vapor deposition mask according to each of the twelfth aspect to the seventeenth aspect described above, wherein the flat region is observed from the second surface side using a laser microscope. In some cases, a pixel value equal to or higher than the reference value may be exhibited.

In the 19th aspect of the present disclosure, the thickness of the metal plate may be 30 μm or less in the method for producing a vapor deposition mask according to each of the 12th aspect to the 18th aspect described above.

Hereinafter, one embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure is not construed as being limited to these embodiments alone.

FIG. 1 is a plan view showing an example of the organic EL display device 100. FIG. 2 is a cross-sectional view of the organic EL display device 100 of FIG. 1 as viewed from the II-II direction. In FIG. 1, the second electrode layer 141 and the sealing substrate 150 are omitted.

As shown in FIGS. 1 and 2, the organic EL display device 100 has a first electrode layer 120 located on the first surface 111 side of the substrate 110 and the substrate 110, and a first organic located on the first electrode layer 120. The layer 131, the second organic layer 132 and the third organic layer 133, and the second electrode layer 141 located on the first organic layer 131, the second organic layer 132 and the third organic layer 133 may be provided. ..

The substrate 110 may be a plate-shaped member having an insulating property. The substrate 110 preferably has transparency to transmit light. The substrate 110 includes, for example, glass.

The first electrode layer 120 contains a material having conductivity. For example, the first electrode layer 120 may contain a metal, a conductive metal oxide, other inorganic materials, and the like. The first electrode layer 120 may contain a transparent and conductive metal oxide such as indium tin oxide.

As shown by the dotted line in FIG. 1, the first electrode layer 120 may be arranged along the first arrangement direction F1 and the second arrangement direction F2 in a plan view. As shown in FIG. 1, the second arrangement direction F2 may be a direction orthogonal to the first arrangement direction F1.

The first organic layer 131, the second organic layer 132, and the third organic layer 133 may be layers containing an organic semiconductor material. The first organic layer 131, the second organic layer 132, and the third organic layer 133 may be light emitting layers, respectively. For example, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may be a red light emitting layer, a green light emitting layer, and a blue light emitting layer, respectively. In a plan view, a region including one first electrode layer 120, one thin-film deposition layer, and second electrode layer 141 may constitute a unit structure such as one pixel of an organic EL display device.

As shown in FIG. 1, the first organic layer 131, the second organic layer 132, and the third organic layer 133 are arranged so that the organic layers of the same type are not adjacent to each other in the first arrangement direction F1 and the second arrangement direction F2. It may have been done. For example, the first organic layer 131, the second organic layer 131, so that the second organic layer 132 is located between the two first organic layers 131 and the second organic layer 132 is located between the two third organic layers 133. The organic layer 132 and the third organic layer 133 may be arranged in the first arrangement direction F1 and the second arrangement direction F2. In this case, focusing on the second organic layer 132, the second organic layer 132 is shifted by a distance of 1/2 of the arrangement pitch F3 in the first arrangement direction F1 and is 1 of the arrangement pitch F4 in the second arrangement direction F2. They are lined up in a zigzag position at a position shifted by a distance of / 2. Such an arrangement is also referred to as a staggered arrangement.

The first organic layer 131, the second organic layer 132, and the third organic layer 133 are each formed by adhering the vapor deposition material to the substrate 110 through the through holes of the vapor deposition mask corresponding to the pattern of each organic layer. It may be a layer.

The second electrode layer 141 may contain a conductive material such as metal. Examples of materials constituting the second electrode layer 141 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon and the like, and alloys thereof. Can be mentioned.

Although not shown, the second electrode layer 141 may be formed so that there is a gap between the second electrode layers 141 located on the two adjacent organic layers 131, 132, 133. Such a second electrode layer 141 may be formed by adhering a vapor deposition material to the substrate 110 through a through hole of a vapor deposition mask corresponding to the pattern of the second electrode layer 141.

As shown in FIG. 2, the organic EL display device 100 may include an insulating layer 160 located between two adjacent first electrode layers 120 in a plan view. The insulating layer 160 may contain, for example, polyimide. The insulating layer 160 may overlap the end portion of the first electrode layer 120. In this case, the dotted line with reference numeral 120 in FIG. 1 indicates the outer edge of the region of the first electrode layer 120 that does not overlap with the insulating layer 160. As shown in FIG. 1, the first organic layer 131, the second organic layer 132, and the third organic layer 133 may spread so as to cover the first electrode layer 120 in a plan view. The contours of the first organic layer 131, the second organic layer 132, and the third organic layer 133 may surround the contour of the first electrode layer 120 in a plan view.

As shown in FIG. 2, the organic EL display device may include a sealing substrate 150 that covers elements on the substrate 110 such as the organic layers 131, 132, and 133 on the first surface 111 side of the substrate 110. The sealing substrate 150 can prevent water vapor from the outside of the organic EL display device from entering the inside of the organic EL display device. This makes it possible to prevent the organic layers 131, 132, 133 and the like from deteriorating due to moisture. The sealing substrate 150 includes, for example, glass.

Although not shown, the organic EL display device may include a hole injection layer or a hole transport layer located between the first electrode layer 120 and the organic layers 131, 132, 133. The organic EL display device may include an electron transport layer or an electron injection layer located between the organic layers 131, 132, 133 and the second electrode layer 141. In the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer, the vapor deposition material is transferred to the substrate 110 through the through holes of the vapor deposition mask corresponding to the pattern of each layer, similarly to the organic layers 131, 132, 133. It may be formed by adhering.

Next, a thin-film deposition device 90 for forming the above-mentioned organic layers 131, 132, 133 and the like constituting the organic EL display device by a thin-film deposition method will be described. As shown in FIG. 3, the vapor deposition apparatus 90 may include a vapor deposition source 94, a heater 96, and a vapor deposition mask apparatus 10 inside the vapor deposition apparatus 90. The vapor deposition apparatus 90 may further include an exhaust means for creating a vacuum atmosphere inside the vapor deposition apparatus 90. The vapor deposition source 94 is, for example, a crucible and accommodates a vapor deposition material 98 such as an organic light emitting material. The heater 96 heats the vapor deposition source 94 to evaporate the vapor deposition material 98 in a vacuum atmosphere. The vapor deposition mask device 10 is arranged so as to face the crucible 94.

The thin-film deposition mask device 10 includes at least one thin-film deposition mask 20. The vapor deposition mask device 10 may include a frame 15 that supports the vapor deposition mask 20. The frame 15 may support the vapor deposition mask 20 in a state of being pulled in the plane direction so as to prevent the vapor deposition mask 20 from bending.

As shown in FIG. 3, the vapor deposition mask device 10 is arranged in the vapor deposition device 90 so that the vapor deposition mask 20 faces the substrate 110 to which the vapor deposition material 98 is adhered. The thin-film deposition mask 20 includes a plurality of through holes 25 through which the thin-film deposition material 98 flying from the thin-film deposition source 94 is passed. In the following description, the surface of the vapor deposition mask 20 located on the side of the substrate 110 is referred to as a first surface 51a, and the surface of the vapor deposition mask 20 located on the opposite side of the first surface 51a is referred to as a second surface 51b.

As shown in FIG. 3, the vapor deposition mask device 10 may include a magnet 93 arranged on the side of the surface of the substrate 110 opposite to the vapor deposition mask 20. By providing the magnet 93, the vapor deposition mask 20 can be attracted to the magnet 93 side by a magnetic force. As a result, the gap between the vapor deposition mask 20 and the substrate 110 can be reduced or eliminated. As a result, it is possible to suppress the generation of shadows in the vapor deposition process, and it is possible to improve the dimensional accuracy and the position accuracy of the vapor deposition layer formed on the substrate 110.

FIG. 4 is a plan view showing a case where the vapor deposition mask device 10 is viewed from the first surface 51a side of the vapor deposition mask 20. As shown in FIG. 4, the thin-film deposition mask device 10 may include a plurality of thin-film deposition masks 20. The shape of the vapor deposition mask 20 may be a rectangle having a length direction and a width direction orthogonal to the length direction. The dimension of the vapor deposition mask 20 in the length direction is larger than the dimension of the vapor deposition mask 20 in the width direction. In the following description, the length direction is also referred to as a mask first direction, and the width direction is also referred to as a mask second direction. The plurality of vapor deposition masks 20 may be arranged in the second direction N2 of the mask. The ends 17a and 17b of each vapor deposition mask 20 in the mask first direction N1 may be fixed to the frame 15 by welding, for example. Although not shown, the vapor deposition mask device 10 may include a member that is fixed to the frame 15 and partially overlaps the vapor deposition mask 20 in the thickness direction of the vapor deposition mask 20. Examples of such a member include a member extending in the second direction N2 of the mask and supporting the vapor deposition mask 20, a member overlapping in a gap between two adjacent vapor deposition masks, and the like.

As shown in FIG. 4, the vapor deposition mask 20 may have a pair of end portions 17a, 17b overlapping the frame 15 and an intermediate portion 18 located between the end portions 17a, 17b. The intermediate portion 18 may have at least one effective region 22 and a peripheral region 23 located around the effective region 22. As shown in FIG. 4, the intermediate portion 18 may include a plurality of effective regions 22 arranged at predetermined intervals along the mask first direction N1. The peripheral region 23 may surround a plurality of effective regions 22.

When the layer of the organic EL display device 100 is manufactured by using the vapor deposition mask 20, one effective region 22 may correspond to one display area of the organic EL display device 100. One effective domain 22 may correspond to a plurality of display areas. Although not shown, a plurality of effective regions 22 may be arranged at predetermined intervals also in the mask second direction N2.

The effective domain 22 may have a rectangular contour in plan view. The effective region 22 may have contours having various shapes depending on the shape of the display region of the organic EL display device. For example, the effective region 22 may have a circular contour.

Next, the effective region 22 will be described in detail. FIG. 5A is a plan view showing an example of the effective region 22 of the vapor deposition mask 20 when viewed from the second surface 51b side. In the present embodiment, as shown in FIG. 5A, an example in which the arrangement of the through holes 25 of the vapor deposition mask 20 is a staggered arrangement will be described. Such a thin-film deposition mask 20 can be used to form a staggered thin-film deposition layer such as the second organic layer 132 described above.

The effective region 22 of the vapor deposition mask 20 includes a metal plate 51 including the first surface 51a and the second surface 51b, and a plurality of through holes 25 penetrating from the first surface 51a side to the second surface 51b side of the metal plate 51. To prepare for. As shown in FIG. 5A, the through holes 25 may be arranged in the second direction D2 intersecting the first direction D1 and the first direction D1 in a plan view. The arrangement of the through holes 25 in a plan view may be a staggered arrangement as in the thin-film deposition layer. Specifically, as shown in FIG. 5A, the distance M21 in the first direction D1 between the center points C1 of the two adjacent through holes 25 in the second direction D2 is two adjacent in the first direction D1. It may be 1/2 of the first center-to-center distance M1 between the center points C1 of the through hole 25.

In FIG. 5A, reference numeral D3 represents a third direction D3 orthogonal to the first direction D1. Reference numeral D4 represents a fourth direction D4 that is symmetrical to the second direction D2 with respect to the third direction D3. As shown in FIG. 5A, the plurality of through holes 25 may be arranged in the fourth direction D4 as well. Although not shown, the distance in the first direction D1 between the center points C1 of the two adjacent through holes 25 in the fourth direction D4 may also be 1/2 of the distance M1 between the first centers.

The second center-to-center distance M2 between the center points C1 of the two adjacent through holes 25 in the second direction D2 may be the same as the first center-to-center distance M1 and is larger than the first center-to-center distance M1. It may be smaller than the first center-to-center distance M1.

The third center-to-center distance M3 between the center points C1 of the two adjacent through holes 25 in the third direction D3 may be larger than the first center-to-center distance M1. M3 / M1, which is the ratio of the third center-to-center distance M3 to the first center-to-center distance M1, may be, for example, 1.1 or more, 1.3 or more, or 1.5 or more. M3 / M1 may be, for example, 1.7 or less, 2.0 or less, or 2.5 or less. The range of M3 / M1 may be defined by a first group consisting of 1.1, 1.3 and 1.5 and / or a second group consisting of 1.7, 2.0 and 2.5. .. The range of M3 / M1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of M3 / M1 may be defined by any combination of any two of the values included in the first group described above. The range of M3 / M1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 1.1 or more and 2.5 or less, 1.1 or more and 2.0 or less, 1.1 or more and 1.7 or less, 1.1 or more and 1.5 or less, and 1.1 or more. It may be 1.3 or less, 1.3 or more and 2.5 or less, 1.3 or more and 2.0 or less, 1.3 or more and 1.7 or less, or 1.3 or more and 1.5 or less. , 1.5 or more and 2.5 or less, 1.5 or more and 2.0 or less, 1.5 or more and 1.7 or less, 1.7 or more and 2.5 or less, 1.7 or more and 2 It may be 0.0 or less, and may be 2.0 or more and 2.5 or less.

As shown in FIG. 5A, the through hole 25 includes a through region 42. The penetration region 42 is a region that penetrates the metal plate 51 in a plan view. The through region 42 may be defined by light passing through the through hole 25. For example, parallel light is incident on one of the first surface 51a or the second surface 51b of the vapor deposition mask 20 along the normal direction of the metal plate 51, and is transmitted through the through hole 25 to pass through the first surface 51a or the second surface 51b. Emit from the other side of. Then, the region occupied by the emitted light in the surface direction of the metal plate 51 is adopted as the through region 42 of the through hole 25. Alternatively, the penetration region 42 may be defined by observing the vapor deposition mask 20 using a laser microscope.

FIG. 5B is a diagram for explaining the contour and arrangement of the through region 42 of the through hole 25 in a plan view. As shown in FIG. 5B, the contour of the through region 42 of the through hole 25 is a pair of first contours 42a, a pair of third contours 42c, and two second contours located between the first contour 42a and the third contour 42c. It may include a contour 42b and two fourth contours 42d located between the first contour 42a and the third contour 42c. In the first direction D1, the first contours 42a of the two adjacent through holes 25 face each other. In the second direction D2, the second contours 42b of the two adjacent through holes 25 face each other. In the fourth direction D4, the fourth contours 42d of the two adjacent through holes 25 face each other.

The first contour 42a may include a portion linearly extending in the third direction D3, or may include a curved portion. When the first contour 42a includes a curved portion, the curvature of the curved portion of the first contour 42a may be larger than the curvature of the second contour 42b and the curvature of the fourth contour 42d.

The third contour 42c may include a portion linearly extending in the first direction D1 or may include a curved portion. When the third contour 42c includes a curved portion, the curvature of the curved portion of the third contour 42c may be larger than the curvature of the second contour 42b and the curvature of the fourth contour 42d.

Subsequently, the region between the through holes 25 will be described. As shown in FIG. 5A, the effective region 22 of the vapor deposition mask 20 may include a flat region 52 located between two adjacent through holes 25 when the vapor deposition mask 20 is viewed from the second surface 51b side. good. The flat region 52 may be defined as a region exhibiting a pixel value equal to or higher than a reference value when the vapor deposition mask 20 is observed from the second surface 51b side using a laser microscope. The reference value is 1/2 of the maximum pixel value that can be taken by each pixel of the image taken by the laser microscope. The laser microscope used and the observation conditions are as follows.
-Laser microscope: VK-X250 manufactured by KEYENCE CORPORATION
-Laser light: Blue (wavelength 408 nm)
-Objective lens: 50x-Optical zoom: 1.0x-Measurement mode: Surface shape-Measurement quality: High speed-Uses Real Peak Detection (RPD) function

As shown in FIG. 5A, the flat region 52 may include a first flat region 53 and a second flat region 54. The first flat region 53 and the second flat region 54 are located between two adjacent through holes 25 in the first direction D1. The first flat region 53 and the second flat region 54 face each other with the first center line L1 in the third direction D3. The first center line L1 is a straight line passing through the center point C1 of two adjacent through holes 25 in the first direction D1. The first flat region 53 is located on one side of the first center line L1. The second flat region 54 is located on the other side of the first center line L1. In the example shown in FIG. 5A, one side is the upper side and the other side is the lower side.

The first flat region 53 and the second flat region 54 are located between the first through hole 25 and the second through hole 25 adjacent to each other in the third direction D3. The first flat region 53 is located between the first through hole 25 and the first center line L1. The second flat region 54 is located between the second through hole 25 and the first center line L1.

In FIG. 5A, reference numeral U1 represents the distance between the penetration region 42 and the flat region 52 in the first direction D1. The distance U1 is defined by the position of the first center line L1. Reference numeral U3 represents the distance between the penetration region 42 and the flat region 52 in the third direction D3. The distance U3 is defined by the position of the third center line L3.

The distance U3 may be the same as the distance U1. The distance U3 may be larger than the distance U1. U3 / U1, which is the ratio of the distance U3 to the distance U1, may be, for example, 1.01 or more, 1.03 or more, 1.05 or more, or 1.10 or more. The distance U3 may be smaller than the distance U1. U3 / U1 may be, for example, 0.99 or less, 0.97 or less, 0.95 or less, or 0.90 or less.

As shown in FIG. 5A, the first flat region 53 and the second flat region 54 may be continuous in the third direction D3. That is, the first flat region 53 and the second flat region 54 may be connected at the first center line L1. As will be described later, the first flat region 53 and the second flat region 54 may be discontinuous. That is, a non-flat region may exist between the first flat region 53 and the second flat region 54.

As shown in FIG. 5A, the flat region 52 may not exist between the two adjacent through holes 25 in the second direction D2. For example, two adjacent through holes 25 may be connected in the second direction D2. In this case, the flat region 52 located between the two adjacent through holes 25 in the first direction D1 is independent of the other adjacent flat regions 52 in the second direction D2 and the fourth direction D4. Reference numeral U2 represents the distance between two adjacent flat regions 52 in the second direction D2.

Next, the cross-sectional structure of the through hole 25 and the flat region 52 will be described with reference to FIGS. 6 and 7. FIG. 6 is a cross-sectional view of the vapor deposition mask 20 of FIG. 5A when it is cut along the line AA extending in the first direction D1 and passing through the through hole 25. FIG. 7 is a cross-sectional view of the vapor deposition mask of FIG. 5A when it extends in the second direction D2 and is cut along the line BB passing through the through hole 25.

As shown in FIGS. 6 and 7, the through hole 25 may include a first recess 30 and a second recess 35. The first recess 30 includes a first wall surface 31 located on the first surface 51a side. The second recess 35 includes a second wall surface 36 located on the second surface 51b side. The second recess 35 is connected to the first recess 30 at the connecting portion 41. The first wall surface 31 is a surface extending from the first end 32 of the through hole 25 toward the second surface 51b. The first end 32 is the end of the through hole 25 on the first surface 51a. The second wall surface 36 is a surface that is connected to the first wall surface 31 via the connecting portion 41, extends from the connecting portion 41 toward the second surface 51b, and reaches the second end 37. The second end 37 is the end of the through hole 25 on the second surface 51b. As shown in FIGS. 6 and 7, the second recess 35 may have a larger dimension than the first recess 30 in the plane direction of the vapor deposition mask 20. For example, the contour of the second recess 35 may surround the contour of the first recess 30 in a plan view.

As will be described later, the first recess 30 may be formed by etching the metal plate 51 constituting the vapor deposition mask 20 from the first surface 51a side. The second recess 35 may be formed by etching the metal plate 51 from the second surface 51b side. The connecting portion 41 is a portion where the first recess 30 and the second recess 35 are connected. In the connecting portion 41, the direction in which the wall surface of the through hole 25 spreads may change. For example, the direction in which the wall surface spreads may change discontinuously.

As shown in FIGS. 6 and 7, the second wall surface 36 includes a portion that is displaced toward the center point side of the through hole 25 in a plan view from the second surface 51b side to the first surface 51a side. good. Similarly, the first wall surface 31 may include a portion that is displaced toward the center point side of the through hole 25 in a plan view from the first surface 51a side to the second surface 51b side. In this case, the opening area of the through hole 25 may be minimized in the connecting portion 41. In other words, the connecting portion 41 may define the contour of the penetration region 42 described above.

In FIGS. 5A and 6, reference numeral S1 represents the maximum value of the dimension of the penetration region 42 in the first direction D1. In FIGS. 5A and 7, reference numeral S2 represents the maximum value of the dimension of the penetration region 42 in the second direction D2. The dimension S2 may be larger than the dimension S1.

S2 / S1, which is the ratio of the dimension S2 to the dimension S1, may be, for example, 1.01 or more, 1.05 or more, or 1.10 or more. S2 / S1 may be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The range of S2 / S1 may be defined by a first group consisting of 1.01, 1.05 and 1.10 and / or a second group consisting of 1.20, 1.30 and 1.50. .. The range of S2 / S1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of S2 / S1 may be defined by any combination of any two of the values included in the first group described above. The range of S2 / S1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 1.01 or more and 1.50 or less, 1.01 or more and 1.30 or less, 1.01 or more and 1.20 or less, 1.01 or more and 1.10 or less, and 1.01 or more. It may be 1.05 or less, 1.05 or more and 1.50 or less, 1.05 or more and 1.30 or less, 1.05 or more and 1.20 or less, or 1.05 or more and 1.10 or less. , 1.10 or more and 1.50 or less, 1.10 or more and 1.30 or less, 1.10 or more and 1.20 or less, 1.20 or more and 1.50 or less, 1.20 or more and 1 It may be .30 or less, and may be 1.30 or more and 1.50 or less.

In FIG. 5A, reference numeral S3 represents the maximum value of the dimension of the penetration region 42 in the third direction D3. The dimension S3 may be larger than the dimension S1. S3 / S1, which is the ratio of the dimension S3 to the dimension S1, may be, for example, 1.01 or more, 1.05 or more, or 1.10 or more. S3 / S1 may be, for example, 1.20 or less, 1.30 or less, or 1.50 or less. The range of S3 / S1 may be defined by a first group consisting of 1.01, 1.05 and 1.10 and / or a second group consisting of 1.20, 1.30 and 1.50. .. The range of S3 / S1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of S3 / S1 may be defined by any combination of any two of the values included in the first group described above. The range of S3 / S1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 1.01 or more and 1.50 or less, 1.01 or more and 1.30 or less, 1.01 or more and 1.20 or less, 1.01 or more and 1.10 or less, and 1.01 or more. It may be 1.05 or less, 1.05 or more and 1.50 or less, 1.05 or more and 1.30 or less, 1.05 or more and 1.20 or less, or 1.05 or more and 1.10 or less. , 1.10 or more and 1.50 or less, 1.10 or more and 1.30 or less, 1.10 or more and 1.20 or less, 1.20 or more and 1.50 or less, 1.20 or more and 1 It may be .30 or less, and may be 1.30 or more and 1.50 or less.
Although not shown, the dimension S3 may be the same as the dimension S1 or may be smaller than the dimension S1.

Next, the flat region 52 will be described. As shown in FIG. 6, the above-mentioned flat region 52 is located on the second surface 51b of the metal plate 51. The thickness T2 of the flat region 52 may be the same as the thickness T1 of the metal plate 51. For example, T2 / T1, which is the ratio of the thickness T1 to the thickness T2, may be 0.95 or more and 1.05 or less. The thickness T1 of the metal plate 51 is the thickness of the region of the vapor deposition mask 20 in which the first recess 30 and the second recess 35 are not formed, such as the peripheral region 23.

The thickness T1 of the metal plate 51 may be, for example, 8 μm or more, 10 μm or more, 13 μm or more, or 15 μm or more. The thickness T1 of the metal plate 51 may be, for example, 20 μm or less, 25 μm or less, 30 μm or less, or 50 μm or less. The range of the thickness T1 of the metal plate 51 may be defined by a first group consisting of 8 μm, 10 μm, 13 μm and 15 μm and / or a second group consisting of 20 μm, 25 μm, 30 μm and 50 μm. The range of the thickness T1 of the metal plate 51 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. good. The range of the thickness T1 of the metal plate 51 may be determined by any combination of any two of the values included in the first group described above. The range of the thickness T1 of the metal plate 51 may be determined by any combination of any two of the values included in the second group described above. For example, it may be 8 μm or more and 50 μm or less, 8 μm or more and 30 μm or less, 8 μm or more and 25 μm or less, 8 μm or more and 20 μm or less, or 8 μm or more and 15 μm or less. It may be 8 μm or more and 13 μm or less, 8 μm or more and 10 μm or less, 10 μm or more and 50 μm or less, 10 μm or more and 30 μm or less, or 10 μm or more and 25 μm or less. It may be 10 μm or more and 20 μm or less, 10 μm or more and 15 μm or less, 10 μm or more and 13 μm or less, 13 μm or more and 50 μm or less, or 13 μm or more and 30 μm or less. It may be 13 μm or more and 25 μm or less, 13 μm or more and 20 μm or less, 13 μm or more and 15 μm or less, 15 μm or more and 50 μm or less, or 15 μm or more and 30 μm or less. It may be 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, 20 μm or more and 50 μm or less, 20 μm or more and 30 μm or less, or 20 μm or more and 25 μm or less. It may be 25 μm or more and 50 μm or less, 25 μm or more and 30 μm or less, or 30 μm or more and 50 μm or less.

By setting the thickness T1 of the metal plate 51 to 50 μm or less, it is possible to prevent the vapor deposition material 98 from adhering to the first wall surface 31 and the second wall surface 36 of the through hole 25 before passing through the through hole 25. This makes it possible to improve the utilization efficiency of the thin-film deposition material 98. By setting the thickness T1 of the metal plate 51 to 8 μm or more, the strength of the vapor deposition mask 20 can be ensured, and damage or deformation of the vapor deposition mask 20 can be suppressed.

As shown in FIG. 7, the portion of the second surface 51b located between the two adjacent through holes 25 in the second direction D2 is represented by reference numeral 57 and is referred to as a connecting portion. In the present embodiment, the connecting portion 57 is a non-flat region. For example, the maximum value T3 of the thickness of the connecting portion 57 is smaller than the thickness T1 of the metal plate 51. As shown in FIG. 7, the surface of the connecting portion 57 on the second surface 51b side may be curved so as to be convex toward the second surface 51b side in the cross-sectional view.

The ratio of the maximum value T3 of the thickness of the connecting portion 57 to the thickness T1 of the metal plate 51 may be, for example, 0.10 or more, 0.30 or more, or 0.50 or more. It may be 0.60 or more. T3 / T1 may be, for example, 0.70 or less, 0.80 or less, 0.90 or less, or 0.97 or less. The range of T3 / T1 is the first group consisting of 0.10, 0.30, 0.50 and 0.60 and / or the first group consisting of 0.70, 0.80, 0.90 and 0.97. It may be determined by two groups. The range of T3 / T1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of T3 / T1 may be defined by any combination of any two of the values included in the first group described above. The range of T3 / T1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 0.10 or more and 0.97 or less, 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, and 0.10 or more and 0. It may be 70 or less, 0.10 or more and 0.60 or less, 0.10 or more and 0.50 or less, and 0.10 or more and 0.30 or less. It may be 0.30 or more and 0.97 or less, 0.30 or more and 0.90 or less, 0.30 or more and 0.80 or less, and 0.30 or more and 0.70 or less. It may be 0.30 or more and 0.60 or less, 0.30 or more and 0.50 or less, 0.50 or more and 0.97 or less, and 0. It may be 50 or more and 0.90 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.70 or less, and 0.50 or more and 0.60 or less. It may be 0.60 or more and 0.97 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, and 0.60 or more. It may be 0.70 or less, 0.70 or more and 0.97 or less, 0.70 or more and 0.90 or less, or 0.70 or more and 0.80 or less. It may be 0.80 or more and 0.97 or less, 0.80 or more and 0.90 or less, or 0.90 or more and 0.97 or less.

The thicknesses T1, T2, and T3 described above are calculated by observing the cross section of the vapor deposition mask 20 using a scanning electron microscope. For example, the thicknesses T1 and T2 are measured at five points, respectively, in a sample of the vapor deposition mask 20 including the effective region 22 and the peripheral region 23 and the cross section cut along the first direction D1. It is calculated by calculating the average value of. The thickness T3 is calculated by measuring the thickness T3 at five points in the sample of the vapor deposition mask 20 including the flat region 52 and the cross section cut along the second direction D2, and calculating the average value thereof. .. As the scanning electron microscope, a scanning electron microscope ULTRA55 manufactured by ZEISS can be used.

FIG. 8 is a cross-sectional view of the vapor deposition mask of FIG. 5A when it is cut along the CC line extending in the second direction D2 and passing through the flat region 52. In the cross-sectional view of FIG. 8, the connecting portion 57 overlaps the recess 52a between two adjacent flat regions 52 in the second direction D2.

Next, the shape of the flat region 52 in a plan view will be further described with reference to FIGS. 5A and 9. FIG. 9 is an enlarged plan view showing the first flat region 53 and the second flat region 54 of FIG. 5A.

As shown in FIG. 5A, the first flat region 53 may include a portion where the dimension E1 increases as the distance from the first center line L1 increases. The dimension E1 is the dimension of the first flat region 53 in the first direction D1. The second flat region 54 may include a portion where the dimension E2 increases as the distance from the first center line L1 decreases. The dimension E2 is the dimension of the second flat region 54 in the first direction D1. For example, as shown in FIG. 5A, the contour portion of the flat region 52 facing the through hole 25 in the first direction D1 may be curved so as to be recessed toward the center side of the flat region 52.

As shown in FIG. 5A, the flat region 52 may include a portion where the dimension G1 increases as the distance from the third center line L3 in the first direction D1 increases. The dimension G1 is the dimension of the flat region 52 in the third direction D3. For example, as shown in FIG. 5A, the contour portion of the flat region 52 facing the through hole 25 in the third direction D3 may be curved so as to be recessed toward the center side of the flat region 52. The third center line L3 is a straight line that passes through the intermediate point C2 of two adjacent through holes 25 in the first direction D1 and extends in the third direction D3.

In FIG. 9, reference numeral P1 represents the dimension of the portion of the first flat region 53 that overlaps with the first center line L1 in the first direction D1. Reference numeral P2 represents a distance in the first direction D1 between the ends Pa and Pb of the pair of first contours 53a of the first flat region 53. The ends Pa and Pb are located away from the first center line L1. The first contour 53a is a portion of the contour of the first flat region 53 facing the through hole 25 in the first direction D1. As shown in FIG. 9, the dimension P1 may be smaller than the distance P2.

The ratio of the dimension P1 to the distance P2 may be, for example, 0.01 or more, 0.10 or more, 0.30 or more, or 0.45 or more. .. P1 / P2 may be, for example, 0.60 or less, 0.70 or less, 0.80 or less, or 0.90 or less. The range of P1 / P2 is the first group consisting of 0.01, 0.10, 0.30 and 0.45 and / or the first group consisting of 0.60, 0.70, 0.80 and 0.90. It may be determined by two groups. The range of P1 / P2 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of P1 / P2 may be defined by any combination of any two of the values included in the first group described above. The range of P1 / P2 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 0.01 or more and 0.90 or less, 0.01 or more and 0.80 or less, 0.01 or more and 0.70 or less, and 0.01 or more and 0. It may be 60 or less, 0.01 or more and 0.45 or less, 0.01 or more and 0.30 or less, or 0.01 or more and 0.10 or less. It may be 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, and 0.10 or more and 0.60 or less. It may be 0.10 or more and 0.45 or less, 0.10 or more and 0.30 or less, 0.30 or more and 0.90 or less, and 0. It may be 30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, and 0.30 or more and 0.45 or less. It may be 0.45 or more and 0.90 or less, 0.45 or more and 0.80 or less, 0.45 or more and 0.70 or less, and 0.45 or more. It may be 0.60 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, or 0.60 or more and 0.70 or less. It may be 0.70 or more and 0.90 or less, 0.70 or more and 0.80 or less, or 0.80 or more and 0.90 or less.

In FIG. 9, reference numeral P3 represents a dimension in the first direction D1 of the portion of the second flat region 54 that overlaps with the first center line L1. Reference numeral P4 represents a distance in the first direction D1 between the ends Pc and Pd of the pair of first contours 54a of the second flat region 54. The ends Pc and Pd are located away from the first center line L1. The first contour 54a is a portion of the contour of the second flat region 54 facing the through hole 25 in the first direction D1. When the first flat region 53 and the second flat region 54 are continuous, the dimension P3 of the second flat region 54 is equal to the dimension P1 of the first flat region 53 described above.

Since the numerical range of the ratio of the dimension P3 to the distance P4 in the second flat region 54 is the same as the numerical range of the ratio of the dimension P1 to the distance P2 in the first flat region 53, the description thereof will be omitted.

In FIG. 9, reference numeral Q1 represents the dimension of the portion of the flat region 52 that overlaps with the third center line L3 in the third direction D3. Reference numeral Q2 represents a distance in the third direction D3 between the ends Qa and Qb of the pair of second contours 52b of the flat region 52 including the first flat region 53 and the second flat region 54. The ends Qa and Qb are located away from the first center line L1. The second contour 52b is a portion of the contour of the flat region 52 facing the through hole 25 in the third direction D3. As shown in FIG. 9, the dimension Q1 may be smaller than the distance Q2. Alternatively, as will be described later, the dimension Q1 may be the same as the distance Q2.

The ratio of the dimension Q1 to the distance Q2 may be, for example, 0.30 or more, 0.40 or more, 0.50 or more, or 0.60 or more. .. Q1 / Q2 may be, for example, 0.70 or less, 0.80 or less, 0.90 or less, or 1.00 or less. The range of Q1 / Q2 is the first group consisting of 0.30, 0.40, 0.50 and 0.60, and / or the first group consisting of 0.70, 0.80, 0.90 and 1.00. It may be determined by two groups. The range of Q1 / Q2 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of Q1 / Q2 may be defined by any combination of any two of the values included in the first group described above. The range of Q1 / Q2 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 0.30 or more and 1.00 or less, 0.30 or more and 0.90 or less, 0.30 or more and 0.80 or less, and 0.30 or more and 0. It may be 70 or less, 0.30 or more and 0.60 or less, 0.30 or more and 0.50 or less, or 0.30 or more and 0.40 or less. It may be 0.40 or more and 1.00 or less, 0.40 or more and 0.90 or less, 0.40 or more and 0.80 or less, and 0.40 or more and 0.70 or less. It may be 0.40 or more and 0.60 or less, 0.40 or more and 0.50 or less, 0.50 or more and 1.00 or less, and 0. It may be 50 or more and 0.90 or less, 0.50 or more and 0.80 or less, 0.50 or more and 0.70 or less, and 0.50 or more and 0.60 or less. It may be 0.60 or more and 1.00 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, and 0.60 or more. It may be 0.70 or less, 0.70 or more and 1.00 or less, 0.70 or more and 0.90 or less, or 0.70 or more and 0.80 or less. It may be 0.80 or more and 1.00 or less, 0.80 or more and 0.90 or less, or 0.90 or more and 1.00 or less.

The dimension Q1 may be larger than the dimension P1. That is, the flat region 52 may have a shape extending in the third direction D3. Q1 / P1, which is the ratio of the dimension Q1 to the dimension P1, may be, for example, 1.05 or more, 1.2 or more, 1.5 or more, or 2.0 or more. Q1 / P1 may be, for example, 2.5 or less, 5.0 or less, 10 or less, or 50 or less. The range of Q1 / P1 is defined by the first group consisting of 1.05, 1.2, 1.5 and 2.0 and / or the second group consisting of 2.5, 5.0, 10 and 50. May be done. The range of Q1 / P1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of Q1 / P1 may be defined by any combination of any two of the values included in the first group described above. The range of Q1 / P1 may be defined by any combination of two of the values included in the second group described above. For example, it may be 1.05 or more and 50 or less, 1.05 or more and 10 or less, 1.05 or more and 5.0 or less, 1.05 or more and 2.5 or less, and 1.05 or more and 2.0 or less. It may be 1.05 or more and 1.5 or less, 1.05 or more and 1.2 or less, 1.2 or more and 50 or less, 1.2 or more and 10 or less, 1.2 or more and 5.0. It may be 1.2 or more and 2.5 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.5 or less, 1.5 or more and 50 or less, and 1.5 or more. It may be 10 or less, 1.5 or more and 5.0 or less, 1.5 or more and 2.5 or less, 1.5 or more and 2.0 or less, 2.0 or more and 50 or less, 2.0 or less. It may be 10 or more and 10 or less, 2.0 or more and 5.0 or less, 2.0 or more and 2.5 or less, 2.5 or more and 50 or less, 2.5 or more and 10 or less, 2.5 or more. It may be 5.0 or less, 5.0 or more and 50 or less, 5.0 or more and 10 or less, or 10 or more and 50 or less.

The dimension Q2 may be larger than the dimension P2. As the range of the numerical values of Q2 / P2, which is the ratio of the dimension Q2 to the dimension P2, the above-mentioned range of the numerical values of Q1 / P1 can be adopted. The fact that the dimension Q2 is larger than the dimension P2 means that the flat region 52 has a shape extending in the third direction D3 as in the case of the dimension Q1 and the dimension P1.

The third direction D3 may coincide with the mask first direction N1. For example, the angle formed by the third direction D3 and the mask first direction N1 may be 5.0 degrees or less, 3.0 degrees or less, or 1.0 degrees or less. , 0.5 degrees or less, or 0.1 degrees or less. The mask first direction N1 may be determined based on the direction in which the side edge 17c of the vapor deposition mask 20 extends. When the vapor deposition mask 20 includes two alignment marks aligned along the side edges 17c, the mask first direction N1 may be determined based on the direction in which a straight line passing through the centers of the two alignment marks extends.

The fact that the third direction D3 coincides with the mask first direction N1 means that the length direction of the flat region 52 coincides with the length direction of the vapor deposition mask 20. The vapor deposition mask 20 fixed to the frame 15 may be tensioned in the length direction. When the length direction of the flat region 52 coincides with the length direction of the vapor deposition mask 20, it is possible to suppress the change in the shape of the flat region 52 in the plan view due to the tension. Thereby, for example, it is possible to suppress the occurrence of wrinkles or the like on the vapor deposition mask 20 due to the tension.

The larger the ratio of the area of the flat region 52 to the area of the effective region 22, the higher the strength of the vapor deposition mask 20. The higher the strength of the vapor deposition mask 20, the higher the workability of the process using the vapor deposition mask 20. For example, it is possible to prevent the vapor deposition mask 20 from being deformed or damaged when the vapor deposition mask 20 is carried. On the other hand, the larger the ratio of the area of the flat region 52 to the area of the effective region 22, the more likely it is that shadows will occur. The dimensions P1, P2, Q1, Q2 and the like of the flat region 52 are determined in consideration of strength and shadow. An example of the relationship between the dimension of the flat region 52 and other dimensions will be described below.

The larger the distances U1, U2, and U3 shown in FIG. 5A, the more the shadow is suppressed, but the strength of the vapor deposition mask 20 becomes lower. The dimensions of the flat area 52 may be determined in consideration of these distances.

U2 / Q1, which is the ratio of the distance U2 to the dimension Q1, may be, for example, 0.05 or more, 0.15 or more, 0.3 or more, or 0.5 or more. U2 / Q1 may be, for example, 0.8 or less, 1.0 or less, 1.2 or less, or 1.5 or less. The range of U2 / Q1 is the first group consisting of 0.05, 0.15, 0.3 and 0.5 and / or the first group consisting of 0.8, 1.0, 1.2 and 1.5. It may be determined by two groups. The range of U2 / Q1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of U2 / Q1 may be defined by any combination of any two of the values included in the first group described above. The range of U2 / Q1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 0.05 or more and 1.5 or less, 0.05 or more and 1.2 or less, 0.05 or more and 1.0 or less, 0.05 or more and 0.8 or less, and 0.05 or more. It may be 0.5 or less, 0.05 or more and 0.3 or less, 0.05 or more and 0.15 or less, 0.15 or more and 1.5 or less, and 0.15 or more and 1.2 or less. , 0.15 or more and 1.0 or less, 0.15 or more and 0.8 or less, 0.15 or more and 0.5 or less, 0.15 or more and 0.3 or less, 0.3 or more and 1 It may be 5.5 or less, 0.3 or more and 1.2 or less, 0.3 or more and 1.0 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.5 or less. It may be 0.5 or more and 1.5 or less, 0.5 or more and 1.2 or less, 0.5 or more and 1.0 or less, 0.5 or more and 0.8 or less, 0.8 or more and 1. It may be 5 or less, 0.8 or more and 1.2 or less, 0.8 or more and 1.0 or less, 1.0 or more and 1.5 or less, 1.0 or more and 1.2 or less, and 1 It may be 2 or more and 1.5 or less.

As the range of the numerical values of U2 / Q2, which is the ratio of the distance U2 to the dimension Q2, the above-mentioned numerical range of U2 / Q1 can be adopted.

U3 / Q1, which is the ratio of the distance U3 to the dimension Q1, may be, for example, 0.02 or more, 0.05 or more, 0.10 or more, or 0.20 or more. U3 / Q1 may be, for example, 0.30 or less, 0.50 or less, 0.70 or less, or 1.00 or less. The range of U3 / Q1 is the first group consisting of 0.02, 0.05, 0.10 and 0.20 and / or the first group consisting of 0.30, 0.50, 0.70 and 1.00. It may be determined by two groups. The range of U3 / Q1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of U3 / Q1 may be defined by any combination of any two of the values included in the first group described above. The range of U3 / Q1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 0.02 or more and 1.00 or less, 0.02 or more and 0.70 or less, 0.02 or more and 0.50 or less, 0.02 or more and 0.30 or less, and 0.02 or more. It may be 0.20 or less, 0.02 or more and 0.10 or less, 0.02 or more and 0.05 or less, 0.05 or more and 1.00 or less, and 0.05 or more and 0.70 or less. , 0.05 or more and 0.50 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.10 or less, 0.10 or more and 1 It may be 0.00 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less. It may be 0.20 or more and 1.00 or less, 0.20 or more and 0.70 or less, 0.20 or more and 0.50 or less, 0.20 or more and 0.30 or less, and 0.30 or more and 1. It may be 00 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.50 or less, 0.50 or more and 1.00 or less, 0.50 or more and 0.70 or less, and 0. It may be .70 or more and 1.00 or less.

As the range of the numerical values of U3 / Q2, which is the ratio of the distance U3 to the dimension Q2, the above-mentioned numerical range of U3 / Q1 can be adopted.

The larger the through-hole dimensions S1, S2, and S3 shown in FIG. 5A, the smaller the influence of shadow, but the lower the strength of the vapor deposition mask 20. The dimensions of the flat region 52 may be determined in consideration of the dimensions of the through holes.

S3 / Q1, which is the ratio of the dimension S3 to the dimension Q1, may be, for example, 0.5 or more, 0.6 or more, 0.7 or more, or 0.8 or more. S3 / Q1 may be, for example, 1.0 or less, 1.2 or less, 1.5 or less, or 2.0 or less. The range of S3 / Q1 is the first group consisting of 0.5, 0.6, 0.7 and 0.8 and / or the first group consisting of 1.0, 1.2, 1.5 and 2.0. It may be determined by two groups. The range of S3 / Q1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of S3 / Q1 may be defined by any combination of any two of the values included in the first group described above. The range of S3 / Q1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 0.5 or more and 2.0 or less, 0.5 or more and 1.5 or less, 0.5 or more and 1.2 or less, 0.5 or more and 1.0 or less, and 0.5 or more. It may be 0.8 or less, 0.5 or more and 0.7 or less, 0.5 or more and 0.6 or less, 0.6 or more and 2.0 or less, and 0.6 or more and 1.5 or less. , 0.6 or more and 1.2 or less, 0.6 or more and 1.0 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, 0.7 or more and 2 It may be 0.0 or less, 0.7 or more and 1.5 or less, 0.7 or more and 1.2 or less, 0.7 or more and 1.0 or less, 0.7 or more and 0.8 or less. It may be 0.8 or more and 2.0 or less, 0.8 or more and 1.5 or less, 0.8 or more and 1.2 or less, 0.8 or more and 1.0 or less, and 1.0 or more and 2. It may be 0 or less, 1.0 or more and 1.5 or less, 1.0 or more and 1.2 or less, 1.2 or more and 2.0 or less, 1.2 or more and 1.5 or less, and 1 It may be 5.5 or more and 2.0 or less.

As the range of the numerical values of S3 / Q2, which is the ratio of the dimension S3 to the dimension Q2, the above-mentioned numerical range of S3 / Q1 can be adopted.

For the above-mentioned dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, U3, etc., the vapor deposition mask 20 is attached from the second surface 51b side using a laser microscope. Calculated by observing. For example, dimensions S1, S2, S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, U3 are dimensions S1, S2, in the sample of the vapor deposition mask 20 including the effective region 22. It is calculated by measuring S3, P1, P2, P3, P4, Q1, Q2, M1, M2, M3, U1, U2, and U3 at five points each and calculating the average value thereof. The laser microscope used and the observation conditions are as follows.
-Laser microscope: VK-X250 manufactured by KEYENCE CORPORATION
-Laser light: Blue (wavelength 408 nm)
-Objective lens: 50x-Optical zoom: 1.0x-Measurement mode: Surface shape-Measurement quality: High speed-Uses Real Peak Detection (RPD) function

Next, a method of processing the metal plate 51 to manufacture the vapor deposition mask 20 will be described mainly with reference to FIGS. 10 to 15. FIG. 10 is a diagram showing a manufacturing apparatus 70 for manufacturing a vapor deposition mask 20 using a metal plate 51. First, the winding body 50 including the metal plate 51 wound around the shaft member 51x is prepared. Subsequently, the metal plate 51 of the winding body 50 is unwound from the shaft member 51x, and the metal plate 51 is separated from the resist film forming apparatus 71, the exposure / developing apparatus 72, the etching apparatus 73, the film stripping apparatus 74 and the separation as shown in FIG. It is sequentially conveyed to the device 75. FIG. 10 shows an example in which the metal plate 51 moves between the devices by being conveyed in the length direction T thereof, but the present invention is not limited to this. For example, in the resist film forming apparatus 71, the metal plate 51 provided with the resist layer may be wound around the shaft member 51x again, and then the metal plate 51 in a wound state may be supplied to the exposure / developing apparatus 72. After the metal plate 51 provided with the resist layer exposed / developed in the exposure / developing apparatus 72 is wound again on the shaft member 51x, the metal plate 51 in the wound state is supplied to the etching apparatus 73. You may. After the metal plate 51 etched in the etching apparatus 73 is wound again on the shaft member 51x, the metal plate 51 in the state of the wound body may be supplied to the film stripping apparatus 74. After rewinding the metal plate 51 from which the resin 58 and the like described later are removed in the film removing device 74 around the shaft member 51x, the metal plate 51 in a wound state may be supplied to the separating device 75.

The resist film forming apparatus 71 is provided with a resist layer on the first surface and the second surface of the metal plate 51. The exposure / developing apparatus 72 patterns the resist layer by subjecting the resist layer to an exposure treatment and a development treatment.

The etching apparatus 73 etches the metal plate 51 with the patterned resist layer as a mask to form a through hole 25 in the metal plate 51. In the present embodiment, a large number of through holes 25 corresponding to a plurality of thin-film deposition masks 20 are formed in the metal plate 51. In other words, a plurality of vapor deposition masks 20 are allocated to the metal plate 51. For example, a large number of through holes 25 are arranged in the metal plate 51 so that a plurality of effective regions 22 are arranged in the width direction of the metal plate 51 and a plurality of effective regions 22 for the vapor deposition mask 20 are arranged in the length direction of the metal plate 51. To form. The film peeling device 74 peels off the components provided for protecting the non-etched portion of the metal plate 51 from the etching solution, such as the resist pattern and the resin 58 described later.

The separation device 75 carries out a separation step of separating the portion of the metal plate 51 in which the plurality of through holes 25 corresponding to the vapor deposition mask 20 for one sheet are formed from the metal plate 51. In this way, the vapor deposition mask 20 can be obtained.

Each step of the manufacturing method of the vapor deposition mask 20 will be described in detail.

First, the winding body 50 including the metal plate 51 wound around the shaft member 51x is prepared. The thickness of the metal plate 51 is, for example, 5 μm or more and 50 μm or less. As a method for producing the metal plate 51 having a desired thickness, a rolling method, a plating film forming method, or the like can be adopted.

As the metal plate 51, for example, a metal plate made of an iron alloy containing nickel can be used. The iron alloy constituting the metal plate may further contain cobalt in addition to nickel. For example, as a material of the metal plate 51, an iron alloy having a total content of nickel and cobalt of 30% by mass or more and 54% by mass or less and a cobalt content of 0% by mass or more and 6% by mass or less is used. Can be used. Specific examples of nickel or an iron alloy containing nickel and cobalt include Invar material containing 34% by mass or more and 38% by mass or less of nickel, and Super containing 30% by mass or more and 34% by mass or less of nickel and further cobalt. Examples thereof include Invar materials, low thermal expansion Fe—Ni based plating alloys containing nickel of 38% by mass or more and 54% by mass or less.

Subsequently, using the resist film forming apparatus 71, the first surface resist layer 61 is formed on the first surface 51a of the metal plate 51 unwound from the unwinding device, and the second surface resist is formed on the second surface 51b. The layer 62 is formed. For example, by attaching a dry film containing a photosensitive resist material such as an acrylic photocurable resin on the first surface 51a and the second surface 51b of the metal plate 51, the first surface resist layer 61 and the second surface The resist layer 62 is formed. Alternatively, a coating liquid containing a negative type photosensitive resist material is applied onto the first surface 51a and the second surface 51b of the metal plate 51, and the coating liquid is dried to cause the first surface resist layer 61 and the second surface. The surface resist layer 62 may be formed.

The thickness of the resist layers 61 and 62 may be, for example, 1 μm or more, 3 μm or more, 5 μm or more, or 7 μm or more. The thickness of the resist layers 61 and 62 may be, for example, 10 μm or less, 15 μm or less, 20 μm or less, or 25 μm or less. The thickness range of the resist layers 61, 62 may be defined by a first group of 1 μm, 3 μm, 5 μm and 7 μm and / or a second group of 10 μm, 15 μm, 20 μm and 25 μm. The range of thickness of the resist layers 61 and 62 is determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. May be good. The range of thickness of the resist layers 61 and 62 may be determined by any combination of any two of the values included in the first group described above. The range of thickness of the resist layers 61 and 62 may be determined by any combination of any two of the values included in the second group described above. For example, it may be 1 μm or more and 25 μm or less, 1 μm or more and 20 μm or less, 1 μm or more and 15 μm or less, 1 μm or more and 10 μm or less, or 1 μm or more and 7 μm or less. It may be 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 20 μm or less, or 3 μm or more and 15 μm or less. It may be 3 μm or more and 10 μm or less, 3 μm or more and 7 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, or 5 μm or more and 20 μm or less. It may be 5 μm or more and 15 μm or less, 5 μm or more and 10 μm or less, 5 μm or more and 7 μm or less, 7 μm or more and 25 μm or less, or 7 μm or more and 20 μm or less. It may be 7 μm or more and 15 μm or less, 7 μm or more and 10 μm or less, 10 μm or more and 25 μm or less, 10 μm or more and 20 μm or less, or 10 μm or more and 15 μm or less. It may be 15 μm or more and 25 μm or less, 15 μm or more and 20 μm or less, or 20 μm or more and 25 μm or less.

Subsequently, the resist layers 61 and 62 are exposed and developed using the exposure / developing apparatus 72. FIG. 12 is a cross-sectional view showing resist layers 61 and 62 patterned by exposure and development.

Subsequently, the metal plate 51 is etched using the resist layers 61 and 62 as a mask using the etching apparatus 73. Specifically, first, the first surface etching step is carried out. As shown in FIG. 13, the first surface etching step includes etching a region of the first surface 51a of the metal plate 51 that is not covered by the first surface resist layer 61 with a first etching solution. .. For example, the first etching solution is ejected from a nozzle arranged on the side facing the first surface 51a of the metal plate 51 to be conveyed toward the first surface 51a of the metal plate 51 through the first surface resist layer 61. do. At this time, the second surface 51b of the metal plate 51 may be covered with a film or the like having resistance to the first etching solution.

As a result of the first surface etching step, as shown in FIG. 13, erosion by the first etching solution proceeds in the region of the metal plate 51 that is not covered by the first surface resist layer 61. As a result, a large number of first recesses 30 are formed on the first surface 51a of the metal plate 51. As the first etching solution, for example, a solution containing ferric chloride solution and hydrochloric acid is used.

Next, as shown in FIG. 14, the second surface etching step is carried out. The second surface etching step includes etching a region of the second surface 51b of the metal plate 51 that is not covered by the second surface resist layer 62 with a second etching solution. As a result, the second recess 35 is formed on the second surface 51b of the metal plate 51. The second surface etching step is carried out until the first recess 30 and the second recess 35 communicate with each other so that the through hole 25 is formed. As the second etching solution, for example, a solution containing ferric chloride solution and hydrochloric acid is used as in the case of the above-mentioned first etching solution. When etching the second surface 51b, as shown in FIG. 14, the first recess 30 may be covered with the resin 58 having resistance to the second etching solution.

As shown in FIG. 14, the second surface etching step may be performed so that the second surface 51b of the metal plate 51 partially remains between the two adjacent second recesses 35 in a specific direction. For example, the second surface etching step may be performed so that the second surface 51b of the metal plate 51 partially remains between the two adjacent second recesses 35 in the first direction D1. As a result, as shown in FIG. 6 described above, a flat region 52 located between two adjacent through holes 25 in the first direction D1 can be obtained. The second surface etching step may be carried out so that the above-mentioned first flat region 53 and the second flat region 54 of the flat region 52 are continuous.

As shown in FIG. 15, the two-sided etching step may be performed so that the second surface 51b does not remain between the two adjacent second recesses 35 in a specific direction. For example, the second surface etching step may be performed so that the second surface 51b does not remain between the two adjacent second recesses 35 in the second direction D2. As a result, as shown in FIG. 7 described above, a non-flat connecting portion 57 located between two adjacent through holes 25 in the second direction D2 can be obtained.

Subsequently, a film removing step of removing the resin 58 and the resist layers 61 and 62 from the metal plate 51 is carried out using the film removing device 74. Subsequently, the separation step of separating the portion of the metal plate 51 in which the plurality of through holes 25 corresponding to the vapor deposition mask 20 for one of the metal plates 51 are formed is carried out from the metal plate 51 by using the separation device 75. In this way, the vapor deposition mask 20 can be obtained.

In the vapor deposition mask 20 of the present embodiment, as described above, the dimension E1 of the first flat region 53 and the dimension E2 of the second flat region 54 in the first direction D1 increase as the distance from the first center line L1 increases. Such a structure is realized by appropriately adjusting the shapes of the resist layers 61 and 62 and the etching conditions in a plan view. Examples of etching conditions include temperature, time, composition of etching solution, and the like.

Next, a method of manufacturing the organic EL display device 100 using the vapor deposition mask 20 according to the present embodiment will be described. The manufacturing method of the organic EL display device 100 includes a vapor deposition step of depositing a vapor deposition material 98 on a substrate 110 using a vapor deposition mask 20. In the vapor deposition step, first, the vapor deposition mask device 10 is arranged so that the vapor deposition mask 20 faces the substrate 110. At this time, the vapor deposition mask 20 may be brought into close contact with the substrate 110 by using a magnet 93. Further, the inside of the vapor deposition apparatus 90 is made into a vacuum atmosphere. In this state, the thin-film deposition material 98 is evaporated and blown to the substrate 110 via the thin-film deposition mask 20 to adhere the vapor-film deposition material 98 to the substrate 110 in a pattern corresponding to the through holes 25 of the vapor-film deposition mask 20 to form a vapor-film deposition layer. Can be formed.

In the vapor deposition mask 20 of the present embodiment, the first flat region 53 and the second flat region 54 include a portion where the dimension E1 and the dimension E2 increase as the distance from the first center line L1 increases. Therefore, the thin-film deposition material 98, which has a velocity component in the first direction D1 and moves in a direction inclined with respect to the normal direction of the metal plate 51, adheres to the flat region 52 or the second wall surface 36 of the second recess 35. Can be suppressed. As a result, it is possible to suppress the occurrence of shadows around the first contour 42a of the through hole 25. By increasing the dimensions E1 and E2 at a position away from the first center line L1, the area of the flat region 52 can be increased as compared with the case where the dimensions E1 and E2 are constant regardless of the position. As a result, the strength of the vapor deposition mask 20 can be increased, so that it is possible to prevent the vapor deposition mask 20 from being damaged during transportation or the like.

In the vapor deposition mask 20 of the present embodiment, a non-flat connecting portion 57 exists between two adjacent through holes 25 in the second direction D2. In other words, two adjacent through holes 25 are connected in the second direction D2. Therefore, the thin-film deposition material 98, which has a velocity component in the second direction D2 and moves in a direction inclined with respect to the normal direction of the metal plate 51, adheres to the second wall surface 36 of the connecting portion 57 or the second recess 35. Can be suppressed. As a result, it is possible to suppress the occurrence of shadow around the second contour 42b of the through hole 25.

It is possible to make various changes to the above-described embodiment. Hereinafter, other embodiments will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding portions in the above-described embodiment shall be used for the portions that may be configured in the same manner as in the above-described embodiment. Duplicate explanations will be omitted. When it is clear that the action and effect obtained in one embodiment described above can also be obtained in other embodiments, the description thereof may be omitted.

FIG. 16 is a plan view showing an example of a flat region 52 on the second surface 51b side of the vapor deposition mask 20. In the above-described embodiment, an example is shown in which the dimension Q1 of the flat region 52 is smaller than the distance Q2 between the ends Qa and Qb of the flat region 52. However, the present invention is not limited to this, and as shown in FIG. 16, the dimension Q1 may be the same as the distance Q2. For example, the second contour 52b may extend linearly along the first direction D1. In this case, Q1 / Q2 becomes 1.00.

In the vapor deposition mask 20 provided with the flat region 52 shown in FIG. 16, the first flat region 53 has a portion where the dimension E1 increases as the distance from the first center line L1 increases, as in the case of the above-described embodiment. It may be included. The second flat region 54 may include a portion where the dimension E2 increases as the distance from the first center line L1 decreases. As a result, the thin-film deposition material 98, which has the velocity component of the first direction D1 and moves in the direction inclined with respect to the normal direction of the metal plate 51, adheres to the flat region 52 or the second wall surface 36 of the second recess 35. Can be suppressed. Therefore, it is possible to suppress the occurrence of shadow around the first contour 42a of the through hole 25. By increasing the dimensions E1 and E2 of the first flat region 53 and the second flat region 54 in the first direction D1 at a position away from the first center line L1, the dimensions E1 and E2 are constant regardless of the position. The area of the flat region 52 can be increased as compared with the case. As a result, the strength of the vapor deposition mask 20 can be increased, so that it is possible to prevent the vapor deposition mask 20 from being damaged during transportation or the like.

FIG. 17 is a plan view showing an example of the flat region 52 on the second surface 51b side of the vapor deposition mask 20. In the above-described embodiment, an example is shown in which the first flat region 53 and the second flat region 54 are continuous in the third direction D3. However, the present invention is not limited to this, and as shown in FIG. 17, the first flat region 53 and the second flat region 54 may be discontinuous in the third direction D3. That is, a non-flat region may exist between the first flat region 53 and the second flat region 54. For example, as shown in FIG. 17, the region overlapping the first center line L1 between the first flat region 53 and the second flat region 54 may be a non-flat region.

In the example shown in FIG. 17, as in the case of the above-described embodiment, the first flat region 53 may include a portion where the dimension E1 increases as the distance from the first center line L1 increases. The second flat region 54 may include a portion where the dimension E2 increases as the distance from the first center line L1 decreases.

In the example shown in FIG. 17, the second surface etching step is performed so that the first flat region 53 and the second flat region 54 are discontinuous. For example, the time of the second surface etching step may be increased as compared with the case of the above-described embodiment. The dimensions of the second surface resist layer 62 in the first direction D1 may be reduced as compared with the case of the above-described embodiment.

Even in the vapor deposition mask 20 provided with the flat region 52 shown in FIG. 17, the vapor deposition material 98 having the velocity component in the first direction D1 and moving in the direction inclined with respect to the normal direction of the metal plate 51 is the flat region 52. Alternatively, it can be suppressed from adhering to the second wall surface 36 of the second recess 35. As a result, it is possible to suppress the occurrence of shadows around the first contour 42a of the through hole 25. By increasing the dimensions E1 and E2 at a position away from the first center line L1, the area of the flat region 52 can be increased as compared with the case where the dimensions E1 and E2 are constant regardless of the position. As a result, the strength of the vapor deposition mask 20 can be increased, so that it is possible to prevent the vapor deposition mask 20 from being damaged during transportation or the like.

FIG. 18 is a plan view showing an example of the effective region 22 of the vapor deposition mask 20 when viewed from the second surface 51b side. In the above-described embodiment, an example is shown in which the flat region 52 does not exist between the two adjacent through holes 25 in the second direction D2. However, the present invention is not limited to this, and as shown in FIG. 18, the vapor deposition mask 20 may include a third flat region 55 located between two adjacent through holes 25 in the second direction D2. .. That is, the two adjacent through holes 25 may not be connected in the second direction D2. The vapor deposition mask 20 may include a fourth flat region 56 located between two adjacent through holes 25 in the fourth direction D4.

In the example shown in FIG. 18, as in the case of the above-described embodiment, the first flat region 53 may include a portion where the dimension E1 increases as the distance from the first center line L1 increases. The second flat region 54 may include a portion where the dimension E2 increases as the distance from the first center line L1 decreases.

As shown in FIG. 18, the first flat region 53 and the second flat region 54 may be continuous in the third direction D3. Alternatively, although not shown, the first flat region 53 and the second flat region 54 may be discontinuous in the third direction D3.

FIG. 19 is an example of a cross-sectional view taken along the line DD of the vapor deposition mask 20 of FIG. FIG. 20 is a plan view showing the flat region 52 of FIG. The third flat region 55 may extend in the second direction D2 so as to connect the adjacent first flat region 53 and the second flat region 54 in the second direction D2. Similarly, the fourth flat region 56 may extend in the fourth direction D4 so as to connect the adjacent first flat region 53 and the second flat region 54 in the fourth direction D4.

In FIG. 20, reference numeral R1 represents a dimension in the second direction D2 of a portion of the third flat region 55 that overlaps with the second center line L2. The second center line L2 is a straight line passing through the center point C1 of two adjacent through holes 25 in the second direction D2. The dimension R1 of the third flat region 55 may be smaller than the dimension P1 of the first flat region 53. As a result, the thin-film deposition material 98, which has a velocity component in the second direction D2 and moves in a direction inclined with respect to the normal direction of the metal plate 51, adheres to the second wall surface 36 of the connecting portion 57 or the second recess 35. Can be suppressed. As a result, it is possible to suppress the occurrence of shadow around the second contour 42b of the through hole 25.

The ratio of the dimension R1 to the dimension P1 may be, for example, 0.01 or more, 0.10 or more, 0.30 or more, or 0.45 or more. .. R1 / P1 may be, for example, 0.60 or less, 0.70 or less, 0.80 or less, or 0.90 or less. The range of R1 / P1 is the first group consisting of 0.01, 0.10, 0.30 and 0.45 and / or the first group consisting of 0.60, 0.70, 0.80 and 0.90. It may be determined by two groups. The range of R1 / P1 may be defined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above. The range of R1 / P1 may be defined by any combination of any two of the values included in the first group described above. The range of R1 / P1 may be defined by any combination of any two of the values included in the second group described above. For example, it may be 0.01 or more and 0.90 or less, 0.01 or more and 0.80 or less, 0.01 or more and 0.70 or less, and 0.01 or more and 0. It may be 60 or less, 0.01 or more and 0.45 or less, 0.01 or more and 0.30 or less, or 0.01 or more and 0.10 or less. It may be 0.10 or more and 0.90 or less, 0.10 or more and 0.80 or less, 0.10 or more and 0.70 or less, and 0.10 or more and 0.60 or less. It may be 0.10 or more and 0.45 or less, 0.10 or more and 0.30 or less, 0.30 or more and 0.90 or less, and 0. It may be 30 or more and 0.80 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.60 or less, and 0.30 or more and 0.45 or less. It may be 0.45 or more and 0.90 or less, 0.45 or more and 0.80 or less, 0.45 or more and 0.70 or less, and 0.45 or more. It may be 0.60 or less, 0.60 or more and 0.90 or less, 0.60 or more and 0.80 or less, or 0.60 or more and 0.70 or less. It may be 0.70 or more and 0.90 or less, 0.70 or more and 0.80 or less, or 0.80 or more and 0.90 or less.

In FIG. 20, reference numeral R2 represents a dimension in the fourth direction D4 of the portion of the fourth flat region 56 that overlaps with the fourth center line L4. The fourth center line L4 is a straight line passing through the center point C1 of two adjacent through holes 25 in the fourth direction D4. The dimension R2 of the fourth flat region 56 may be smaller than P1 of the first flat region 53. As a result, the thin-film deposition material 98, which has the velocity component of the fourth direction D4 and moves in the direction inclined with respect to the normal direction of the metal plate 51, adheres to the second wall surface 36 of the connecting portion 57 or the second recess 35. Can be suppressed. As a result, it is possible to suppress the occurrence of shadow around the second contour 42b of the through hole 25.

Since the numerical range of the ratio of the dimension R2 to the dimension P1 is the same as the numerical range of the ratio of the dimension R1 to the dimension P1, the description thereof will be omitted.

Even in the vapor deposition mask 20 provided with the flat region 52 shown in FIG. 18, the vapor deposition material 98 having the velocity component in the first direction D1 and moving in the direction inclined with respect to the normal direction of the metal plate 51 is the flat region 52. Alternatively, it can be suppressed from adhering to the second wall surface 36 of the second recess 35. Therefore, it is possible to suppress the occurrence of shadow around the first contour 42a of the through hole 25. By increasing the dimensions E1 and E2 of the first flat region 53 and the second flat region 54 in the first direction D1 at a position away from the first center line L1, the dimensions E1 and E2 are constant regardless of the position. The area of the flat region 52 can be increased as compared with the case. As a result, the strength of the vapor deposition mask 20 can be increased, so that it is possible to prevent the vapor deposition mask 20 from being damaged during transportation or the like.

Since the dimension R1 of the third flat region 55 is smaller than the dimension P1 of the first flat region 53, the vapor deposition has a velocity component in the second direction D2 and moves in a direction inclined with respect to the normal direction of the metal plate 51. It is possible to prevent the material 98 from adhering to the second wall surface 36 of the third flat region 55 or the second recess 35. Therefore, it is possible to suppress the occurrence of shadow around the first contour 42a of the through hole 25. As a result, it is possible to suppress the occurrence of shadow around the second contour 42b of the through hole 25.

In the above-described embodiment, an example of processing the first surface 51a of the metal plate 51 by carrying out the first surface etching step is shown. However, the first surface processing step for processing the first surface 51a is not limited to the first surface etching step. For example, the metal plate 51 may be processed on the first surface 51a side by irradiating the metal plate 51 with a laser. In this case, the laser machining may be performed instead of the first surface etching step as described below.

First, as shown in FIG. 21, the second surface resist layer 62 is formed on the second surface 51b of the metal plate 51, and the second surface resist layer 62 is patterned. Subsequently, as shown in FIG. 22, a second portion of the second surface 51b of the metal plate 51 that is not covered by the second surface resist layer 62 is etched to form a second recess 35 on the second surface 51b. Perform a surface etching process. After that, as shown in FIG. 23, a laser processing step of irradiating a part of the metal plate 51 where the second recess 35 is formed with the laser L is performed. By the laser processing step, the first concave portion 30 penetrating from the second wall surface 36 of the second concave portion 35 to the first surface 51a is formed. As shown in FIG. 23, the laser L may be irradiated from the second surface 51b side of the metal plate 51.

Also in the examples shown in FIGS. 21 to 23, by forming the above-mentioned flat region 52 on the second surface 51b side of the vapor deposition mask 20, it is possible to suppress the occurrence of shadow around the through hole 25.

As shown in FIG. 23, the wall surface 31 of the first recess 30 formed by laser processing is displaced toward the center point side of the through hole 25 in a plan view from the second surface 51b side to the first surface 51a side. It may be inclined like this. In this case, the end portion of the first recess 30 on the first surface 51a may define a penetration region 42 in which the opening area of the through hole 25 is minimized in a plan view.

Next, the embodiments of the present disclosure will be described in more detail by way of examples, but the embodiments of the present disclosure are not limited to the description of the following examples as long as the gist of the present disclosure is not exceeded.

(Example 1)
A thin-film deposition mask 20 including the flat region 52 shown in FIG. 9 was produced. The dimensions of each part of the vapor deposition mask 20 are as follows.
Dimensions of penetration region 42 in first direction D1 S1: 30 μm
Thickness of flat region 52 T2: 25 μm
-Dimension P1: 2.0 μm of the first flat region 53 that overlaps with the first center line L1.
Distance P2: 19 μm between the ends Pa and Pb of the first flat region 53
-Dimension Q1: 30 μm of the flat region 52 that overlaps with the third center line L3
Distance between the ends Qa and Qb of the flat region 52 Q2: 35 μm
In the flat region 52 of Example 1, the dimension P1 is smaller than the distance P2 and P1 / P2 is 0.11. The dimension Q1 is smaller than the distance Q2, and Q1 / Q2 is 0.86.

Subsequently, as shown in FIG. 4, the vapor deposition mask 20 was fixed to the frame 15. Specifically, the ends 17a and 17b were welded to the frame 15 in a state where tension was applied to the vapor deposition mask 20 in the length direction.

The vapor deposition mask 20 welded to the frame 15 was observed using a loupe. The vapor deposition mask 20 was not damaged or deformed. Specifically, it was confirmed that the vapor deposition mask 20 had no cracks or bends.

Subsequently, a thin-film deposition step was carried out in which the thin-film deposition material 98 was adhered onto the substrate 110 to form a thin-film deposition layer using the thin-film deposition mask 20. As the vapor deposition material 98, tris (8-quinolinolato) aluminum, which is an organic light emitting material, was used. A glass substrate was used as the substrate 110. The conditions of the vapor deposition process were set so that the thickness of the vapor deposition layer was 40 nm.

Subsequently, the vapor deposition layer on the substrate 110 was observed using an optical microscope DMRX HX DC300F manufactured by LEICA and a scanning white interference microscope bird scan manufactured by Hitachi High-Tech Technologies. The area ratio V of the vapor-filmed layer was calculated based on the observation result. The area ratio V of the thin-film deposition layer is the ratio of the effective area V2 of the thin-film deposition layer to the area V1 of the penetration region 42. Specifically, V = V2 / V1. The effective area V2 is the area of the region of the vapor-filmed layer having a thickness of 95% or more of the target thickness. When the target thickness is 40 nm, the effective area V2 is the area of the region of the vapor-filmed layer having a thickness of 38 nm or more.

The area ratio V was calculated for each of the 30 thin-film deposition layers on the substrate 110. The area ratio V was 0.70 or more in all the vapor-filmed layers.

FIG. 24 shows the configuration and evaluation results of the vapor deposition mask 20 in Example 1.
In the "strength" column of the evaluation result, "OK" means that the vapor deposition mask 20 welded to the frame 15 was not cracked or bent. “NG” means that the thin-film mask 20 welded to the frame 15 or the thin-film mask 20 before being welded to the frame 15 has cracks or bends.
In the "shadow" column of the evaluation result, "OK" means that the area ratio V was 0.70 or more in all the 30 vapor-filmed layers on the substrate 110. “NG” means that a thin-film deposition layer having an area ratio V of less than V was present.

(Examples 2 to 6)
A thin-film deposition mask 20 including the flat region 52 shown in FIG. 9 was produced. The dimensions of each part of the vapor deposition mask 20 of Examples 2 to 6 are shown in FIG. Also in the flat region 52 of Examples 2 to 6, the dimension P1 is smaller than the distance P2 as in the case of Example 1. In the flat region 52 of Examples 2 to 6, P1 / P2 is 0.90 or less. In the flat region 52 of Examples 2 to 6, the dimension Q1 is smaller than the distance Q2 as in the case of Example 1.

Subsequently, as in the case of Example 1, the vapor deposition masks 20 of Examples 2 to 6 were fixed to the frame 15. No cracks or bends occurred in the vapor deposition mask 20 welded to the frame 15.

Subsequently, as in the case of Example 1, the vapor deposition material 98 was adhered onto the substrate 110 using the vapor deposition masks 20 of Examples 2 to 6 to form a vapor deposition layer. The area ratio V was 0.70 or more in all 30 vapor-filmed layers on the substrate 110.

(Example 7)
A thin-film deposition mask 20 including the flat region 52 shown in FIG. 16 was produced. The dimensions of each part of the vapor deposition mask 20 of Example 7 are shown in FIG. In the flat region 52 of Example 7, as in the case of Example 1, the dimension P1 is smaller than the distance P2, and P1 / P2 is 0.42. In the flat region 52 of Example 7, since the dimension Q1 and the distance Q2 are equal, Q1 / Q2 is 1.00.

Subsequently, as in the case of Example 1, the vapor deposition mask 20 of Example 7 was fixed to the frame 15. No cracks or bends occurred in the vapor deposition mask 20 welded to the frame 15.

Subsequently, as in the case of Example 1, the vapor deposition material 98 was adhered onto the substrate 110 using the vapor deposition mask 20 of Example 7 to form a vapor deposition layer. The area ratio V was 0.70 or more in all 30 vapor-filmed layers on the substrate 110.

(Examples 8 to 10)
A thin-film deposition mask 20 including the flat region 52 shown in FIG. 20 was produced. The dimensions of each part of the vapor deposition mask 20 of Examples 8 to 10 are shown in FIG. In the flat region 52 of Examples 8 to 10, the dimension R1 is smaller than the dimension P1 and R1 / P1 is 0.90 or less.

Subsequently, as in the case of Example 1, the vapor deposition masks 20 of Examples 8 to 10 were fixed to the frame 15. No cracks or bends occurred in the vapor deposition mask 20 welded to the frame 15.

Subsequently, as in the case of Example 1, the vapor deposition material 98 was adhered onto the substrate 110 using the vapor deposition masks 20 of Examples 8 to 10 to form a vapor deposition layer. The area ratio V was 0.70 or more in all 30 vapor-filmed layers on the substrate 110.

(Examples 11 to 12)
A thin-film deposition mask 20 including the flat region 52 shown in FIG. 9 was produced. The dimensions of each part of the vapor deposition mask 20 of Examples 11 to 12 are shown in FIG. In the flat region 52 of Examples 11 to 12, P1 / P2 is 1.00 because the dimension P1 and the distance P2 are equal to each other. When the vapor deposition mask 20 of Example 12 was visually confirmed, cracks and bends were found in a part of the vapor deposition mask 20.

Subsequently, as in the case of Example 1, the vapor deposition mask 20 of Example 11 was fixed to the frame 15. No cracks or bends occurred in the vapor deposition mask 20 welded to the frame 15.

Subsequently, as in the case of Example 1, the vapor deposition material 98 was adhered onto the substrate 110 using the vapor deposition mask 20 of Example 11 to form a vapor deposition layer. The area ratio V was less than 0.70 in some of the 30 thin-film deposition layers on the substrate 110.

Shadow evaluation was not performed on the vapor deposition mask 20 of Example 12.

(Examples 13 to 14)
A thin-film deposition mask 20 including the flat region 52 shown in FIG. 20 was produced. The dimensions of each part of the vapor deposition mask 20 of Examples 13 to 14 are shown in FIG. In the flat region 52 of Examples 13 to 14, since the dimension P1 and the dimension R1 are equal, R1 / P1 is 1.00. When the vapor deposition mask 20 of Example 13 was visually confirmed, cracks and bends were found in a part of the vapor deposition mask 20.

Subsequently, as in the case of Example 1, the vapor deposition mask 20 of Example 14 was fixed to the frame 15. No cracks or bends occurred in the vapor deposition mask 20 welded to the frame 15.

Subsequently, as in the case of Example 1, the vapor deposition material 98 was adhered onto the substrate 110 using the vapor deposition mask 20 of Example 14 to form a thin-film deposition layer. The area ratio V was less than 0.70 in some of the 30 thin-film deposition layers on the substrate 110.

Shadow evaluation was not performed on the vapor deposition mask 20 of Example 13.

Claims (19)

A thin-film mask containing two or more through holes.
A metal plate including a first surface and a second surface located on the opposite side of the first surface.
The through hole penetrating from the first surface side to the second surface side of the metal plate,
It comprises a flat region located between the two adjacent through holes when the vapor deposition mask is viewed from the second surface side.
The through holes are staggered in the first direction and the second direction in a plan view.
The flat region includes a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line.
The first center line passes through the center points of two adjacent through holes in the first direction.
The first flat region includes a portion in which the dimension of the first flat region in the first direction increases as the distance from the first center line increases.
The second flat region is a vapor deposition mask comprising a portion in which the dimension of the second flat region in the first direction increases as the dimension of the second flat region increases away from the first center line. The vapor deposition mask according to claim 1, wherein the first flat region and the second flat region are continuous. The vapor deposition mask according to claim 1, wherein the first flat region and the second flat region are discontinuous. The vapor deposition mask according to any one of claims 1 to 3, wherein when the vapor deposition mask is viewed from the second surface side, two adjacent through holes are connected in the second direction. The invention according to any one of claims 1 to 3, wherein when the vapor deposition mask is viewed from the second surface side, the third flat region is provided between the two adjacent holes in the second direction. The described vapor deposition mask. When the first flat region and the second flat region are continuous and the vapor deposition mask is viewed from the second surface side, the two adjacent through holes are connected in the second direction. Ori,
The dimension of the portion of the first flat region that overlaps the first center line in the first direction is between the ends of a pair of contours of the first flat region facing the through hole in the first direction. The vapor deposition mask according to claim 1, which is 0.90 times or less the distance in the first direction. When the first flat region and the second flat region are continuous and the vapor deposition mask is viewed from the second surface side, the two adjacent through holes are connected in the second direction. Ori,
The dimension in the third direction of the portion of the flat region that overlaps the third center line is the distance in the third direction between the ends of the pair of contours of the flat region facing the through hole in the third direction. Is less than 1.00 times that of
The third direction is orthogonal to the first direction and is orthogonal to the first direction.
The vapor deposition mask according to claim 1 or 6, wherein the third center line passes through an intermediate point between two adjacent through holes in the first direction and extends in the third direction. The through hole includes a first recess including a first wall surface located on the first surface side and a second recess including a second wall surface located on the second surface side and connected to the first recess. , Equipped with
The vapor deposition mask according to any one of claims 1 to 7, wherein the second wall surface includes a portion that is displaced toward the center point side of the through hole as it goes from the second surface side to the first surface side. The vapor deposition mask according to any one of claims 1 to 8, wherein the flat region exhibits a pixel value equal to or higher than a reference value when observed from the second surface side using a laser microscope. The vapor deposition mask according to any one of claims 1 to 9, wherein the thickness of the flat region is the same as the thickness of the metal plate. The vapor deposition mask according to any one of claims 1 to 10, wherein the thickness of the metal plate is 50 μm or less. A method for manufacturing a thin-film mask containing two or more through holes.
The first surface processing step of forming the first concave portion including the first wall surface on the first surface of the metal plate, and
The region of the second surface of the metal plate located on the opposite side of the first surface, which is not covered by the second surface resist layer, is etched with an etching solution to form a second recess including the second wall surface. The second surface etching step of forming on the second surface is provided.
The through hole includes the first recess and the second recess connected to the first recess.
The second surface etching step is carried out so that a flat region remains between the two adjacent through holes when the vapor deposition mask is viewed from the second surface side.
The through holes are staggered in the first direction and the second direction in a plan view.
The flat region is a first flat region located on one side of the first center line and a second flat region located on the other side of the first center line between two adjacent through holes in the first direction. Including
The first center line passes through the center points of two adjacent through holes in the first direction.
The first flat region includes a portion in which the dimension of the first flat region in the first direction increases as the distance from the first center line increases.
A method for manufacturing a vapor deposition mask, wherein the second flat region includes a portion in which the dimension of the second flat region in the first direction increases as the dimension of the second flat region increases away from the first center line. The method for manufacturing a thin-film deposition mask according to claim 12, wherein the second surface etching step is carried out so that the first flat region and the second flat region are continuous. The method for manufacturing a thin-film deposition mask according to claim 12, wherein the second surface etching step is performed so that the first flat region and the second flat region are discontinuous. The second surface etching step is carried out according to any one of claims 12 to 14, wherein when the vapor deposition mask is viewed from the second surface side, the two adjacent through holes are connected in the second direction. The method for manufacturing a vapor deposition mask according to item 1. The second surface etching step is carried out according to any one of claims 12 to 14, wherein when the vapor deposition mask is viewed from the second surface side, the two adjacent through holes are not connected in the second direction. The method for manufacturing a vapor deposition mask according to item 1. The second surface resist layer includes a first region corresponding to the first flat region and a second region corresponding to the second flat region.
The first region includes a portion in which the dimension of the first region in the first direction increases as the distance from the first center line increases.
The method for manufacturing a vapor deposition mask according to any one of claims 12 to 16, wherein the second region includes a portion in which the dimension of the second region in the first direction increases as the dimension of the second region increases away from the first center line. .. The method for manufacturing a thin-film deposition mask according to any one of claims 12 to 17, wherein the flat region exhibits a pixel value equal to or higher than a reference value when observed from the second surface side using a laser microscope. The method for manufacturing a thin-film deposition mask according to any one of claims 12 to 18, wherein the thickness of the metal plate is 50 μm or less.

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