TW201741475A - Metal mask for vapor deposition - Google Patents

Abstract

In a vapor deposition metal mask, the elements of the vapor deposition metal mask that demarcate each mask hole are configured from two first mask elements that face each other in a first direction and two second mask elements that face each other in a second direction. In a cross-section orthogonal to the first direction, the ratio of the minimal value of the thickness of the first mask elements with respect to the maximal value of the thickness of the second mask elements is at least 70%. At each mask hole, the width of the mask hole in a cross-section orthogonal to the first direction is the mask hole width, and the ratio of the maximal value of the thickness of the second mask element with respect to the minimum value for the mask hole width between a first opening and a second opening is at least 41%.

Description

Metal mask for evaporation

The present invention relates to a metal mask for vapor deposition.

An organic EL display is known as one of display devices manufactured by a vapor deposition method. The organic layer provided in the organic EL display is a deposit of organic molecules sublimated in the vapor deposition step. The metal mask used in the vapor deposition step has a plurality of mask holes, each of which is a passage through which the sublimated organic molecules pass.

Each of the mask holes penetrates the thickness direction of the metal mask. In the plan view facing the opening in which the plurality of mask holes are opened, each of the mask holes is divided into rectangular regions, and the plurality of mask holes are arranged, for example, in a staggered arrangement (for example, refer to Patent Document 1).

Prior technical literature Patent literature

Patent Document 1 Japanese Patent Laid-Open Publication No. 2004-281339

The width between the mask holes adjacent to each other has a mutual direction in the direction in which the mask holes extend and the direction intersecting the extending direction The case of different sizes. The relatively small portion of the width between the mask holes is a weak portion of the weak portion compared to the other portion of the metal mask. In a metal mask having a thickness of less than 1 mm, when such a fragile portion and the mask hole are alternately repeated one by one in one direction, there is a case where the metal mask is bent in a direction in which the fragile portion is arranged.

Such a case is not limited to the metal mask for vapor deposition used in the manufacture of a display device including an organic EL display, and is used for forming wirings provided in various devices or for vapor deposition of functional layers such as various devices. There are also metal masks for vapor deposition. In addition, in such a planar view that an opening is formed with a plurality of mask holes, the plurality of mask holes are arranged in a lattice-like metal mask, or the openings of the mask holes have a substantially square shape. There will also be in the composition.

An object of the present invention is to provide a metal mask for vapor deposition which can suppress bending which is connected in the direction in which the mask holes are arranged.

A metal mask for vapor deposition for solving the above-described problems includes a metal mask for vapor deposition which is formed along a first direction and a plurality of mask holes arranged in a second direction orthogonal to the first direction. The vapor deposition metal mask includes a first surface and a second surface, and each of the mask holes has a first opening opened in the first surface and a second opening opened in the second surface. The elements of the vapor deposition metal mask that divide each of the mask holes are two first mask portions that face each other in the first direction and two second portions that face each other in the second direction. The mask is composed of a mask. The first mask portion and the mask hole are alternately repeated one by one along the first direction, and the second mask portion and the mask hole are along the front side The second direction is alternately repeated one by one. The width of the first mask portion along the first direction is smaller than the width of the second mask portion along the second direction. In the cross section orthogonal to the first direction, the ratio of the minimum value of the thickness of the first mask portion to the maximum value of the thickness of the second mask portion is 70% or more. In each of the mask holes, a width of the mask hole in a cross section orthogonal to the first direction is a mask hole width, and a width of the mask hole in the first opening is smaller than a width of the second opening The aforementioned mask hole width. The ratio of the maximum value of the thickness of the second mask portion to the minimum value of the width of the mask hole between the first opening and the second opening is 41% or more.

According to the above configuration, in the cross section orthogonal to the first direction, the difference between the maximum value of the thickness of the second mask portion and the minimum value of the thickness of the first mask portion is less than 30%. Deviation in thickness within the metal mask. Therefore, in the metal mask for vapor deposition, the difference in strength between the portion where the first mask portion is connected and the portion other than the portion to be connected is suppressed to be suppressed in the portion where the first mask portion is connected. degree.

Further, in the metal mask for vapor deposition, the larger the width of the mask hole, the larger the length of the first mask portion along the second direction. On the other hand, the thickness of the first mask portion is roughly determined by the maximum value of the thickness of the second mask portion sandwiching the first mask portion in the second direction, and the first mask is larger as the maximum value is larger. The thickness of the part is larger.

For this reason, according to the above configuration, since the ratio of the maximum value of the thickness of the second mask portion to the minimum value of the width of the mask hole is 41% or more, it is lower than the other portions of the metal mask for vapor deposition. each The strength of the first mask portion is such that the bending does not concentrate on the size of the first mask portion.

As a result, it is possible to suppress the bending which is connected in the direction in which the mask holes are arranged from being generated in the metal mask for vapor deposition.

In the metal mask for vapor deposition, a plurality of the mask holes are arranged at a constant pitch along the first direction, and a ratio of a maximum value to the pitch is 6% or more, and the maximum value is preferably the same as described above. The maximum value of the thickness of the first mask portion in the cross section orthogonal to the second direction.

The pitch in the first direction is a minimum unit of the first mask portion and the space, which constitutes a metal mask for vapor deposition. In addition, the first mask portion is a portion that is substantially maintained at a predetermined size regardless of the size of the organic layer formed by the metal mask for vapor deposition. The size of the first mask portion is determined, for example, by the size of a peripheral circuit or the like, and is a portion having a minimum size in order to improve the light-emitting efficiency of the organic EL display. On the other hand, the space included in the pitch is a portion that changes in size depending on the resolution required for the organic EL display or the like.

For this reason, in the metal mask for vapor deposition, even if the size of the pitch is changed, that is, even if the size of the space included in the pitch is changed, the maximum value of the thickness of the first mask portion can be maintained at a predetermined size or more. Therefore, in the metal mask for vapor deposition, it is possible to suppress the occurrence of bending in the first mask portion.

In the metal mask for vapor deposition, the width of the mask hole is the width of the mask hole in the second direction, that is, the width of the second mask hole, and the mask in the cross section orthogonal to the second direction The width of the mask hole is the width of the mask hole along the first direction, that is, the width of the first mask hole The width of the first mask hole in the first opening is smaller than the width of the first mask hole in the second opening, and the maximum value of the thickness of the first mask portion is relative to the first opening to the aforementioned The ratio of the minimum value of the width of the first mask hole between the second openings is 7% or more.

In the metal mask for vapor deposition, the maximum value of the thickness of the first mask portion that divides the mask hole in the first direction is larger with respect to the width of the mask hole that is the space extending in the first direction, and the vapor deposition is performed. The higher the strength with a metal mask.

For this reason, according to the above configuration, since the ratio of the maximum value of the thickness of the first mask portion to the minimum value of the width of the first mask hole is 7% or more, it is compared with other portions of the metal mask for vapor deposition. Then, the strength of each of the first mask portions is such that the bending does not concentrate on the size of the first mask portion.

In the metal mask for vapor deposition, a plurality of the mask holes may be arranged in a staggered arrangement when viewed in a direction orthogonal to a direction in which the metal mask for vapor deposition is expanded.

According to the above configuration, in the metal mask for vapor deposition in which a plurality of mask holes are arranged in a staggered arrangement, it is possible to suppress the bending in the direction in which the mask holes are arranged.

According to the present invention, it is possible to suppress the bending which is connected in the direction in which the mask holes are arranged.

10, 40, 50, 60‧‧‧metal masks for evaporation

10a, 31a, 60a‧‧‧ first side

10b, 31b‧‧‧2nd

11, 43, 53, 61‧‧‧ mask holes

11a‧‧‧1st opening

11b‧‧‧2nd opening

11c‧‧‧1st hole

11cp‧‧‧1st inner circumference

11d‧‧‧2nd hole

11dp‧‧‧2nd inner circumference

11e‧‧‧Continuous Department

21, 41, 51, 62‧ ‧ 1st mask

22, 42, 52, 63‧ ‧ 2nd mask

31‧‧‧Material for metal mask

32‧‧‧1st resist layer

33‧‧‧2nd resist layer

34‧‧‧1st resist pattern

34a, 35a‧‧‧1st pattern department

34b, 35b‧‧‧2nd pattern department

35‧‧‧2nd resist pattern

35c‧‧‧ gap

36‧‧‧2nd protective layer

37‧‧‧1st protective layer

Cp1, dp1‧‧‧1st arc

Dp2‧‧‧2nd arc

Dp3‧‧‧ 折部

R1‧‧‧ mask area

R2‧‧‧ surrounding area

Fig. 1 is a partial perspective view showing a part of a three-dimensional structure in which an embodiment of a metal mask for vapor deposition according to the present invention is embodied.

2 is a partial plan view showing a partial plan view of a metal mask for vapor deposition in a plan view in the first facing direction.

3 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the first direction.

4 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the first direction.

Fig. 5 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the second direction.

Fig. 6 is a view showing a step of forming a resist layer in a method of manufacturing a metal mask for vapor deposition.

Fig. 7 is a step diagram for explaining a patterning step of a resist layer in a method of manufacturing a metal mask for vapor deposition.

8 is a partial plan view showing a partial plan view of a resist pattern in a plan view of a first facing surface of a metal mask substrate.

9 is a partial plan view showing a partial plan view of a resist pattern in a plan view of a second facing surface of a metal mask substrate.

FIG. 10 is a step diagram for explaining a step of etching the metal mask base material from the first surface in the manufacturing method of the vapor deposition metal mask.

FIG. 11 is a flow chart showing a step of etching the metal mask substrate from the second surface in the method for producing a metal mask for vapor deposition.

Fig. 12 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the first direction in the first to third embodiments.

Fig. 13 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the first direction in Comparative Examples 1, 3, and 5.

Fig. 14 is a partial cross-sectional view schematically showing a part of a cross section orthogonal to the first direction in Comparative Examples 2, 4, and 6.

FIG. 15 is a plan view showing a plan view seen from a direction facing the first direction of the metal mask for vapor deposition according to the modification.

Form for implementing the invention

An embodiment in which the metal mask for vapor deposition of the present invention is embodied will be described with reference to Figs. 1 to 14 . Hereinafter, the configuration of the metal mask for vapor deposition, the method for producing the metal mask for vapor deposition, and the examples will be described in order. In addition, the metal mask for vapor deposition described below is used for a vapor deposition metal mask manufactured by an organic EL display having a plurality of organic layers.

[Composition of metal mask for vapor deposition]

The configuration of the metal mask for vapor deposition will be described with reference to Figs. 1 to 5 .

As shown in FIG. 1, the vapor deposition metal mask 10 is provided with the 1st surface 10a and the 2nd surface 10b. The metal mask 10 for vapor deposition has a plate shape extending along the first direction D1 and having a predetermined width along the second direction D2 orthogonal to the first direction D1.

The vapor deposition metal mask 10 includes a plurality of mask holes 11 arranged along the first direction D1 and the second direction D2. Viewed from the direction facing the first surface 10a, the first surface 10a is divided into a mask region R1 in which a plurality of mask holes 11 are formed, and a peripheral region R2 surrounding the mask region R1. The mask region R1 is a region where a plurality of mask holes 11 are formed to be processed, and the peripheral region R2 is a region where the processing is not performed.

In the first surface 10a, a plurality of mask regions R1 may be divided at a predetermined interval along the first direction D1, and each of the first direction D1 and the second direction D2 may be spaced apart from each other by a predetermined interval. A plurality of mask regions R1 are divided.

The metal mask 10 for vapor deposition is made of metal, preferably made of invar. Further, the material for forming the metal mask 10 for vapor deposition may be a metal other than the constant steel. In the metal mask 10 for vapor deposition, the thickness T of the peripheral region R2 is preferably, for example, 20 μm or more and 50 μm or less.

FIG. 2 is a plan view showing a plan view of the metal mask 10 for vapor deposition viewed from a direction facing the first surface 10a.

As shown in FIG. 2, in the metal mask 10 for vapor deposition, the elements of the vapor deposition metal mask 10 that divide each of the mask holes 11 are two first mask portions that face each other in the first direction D1. 21. The two second mask portions 22 that face each other in the second direction D2.

In the metal mask 10 for vapor deposition, the first mask portion 21 and the mask hole 11 are alternately alternated one by one in the first direction D1, and the second mask portion 22 and the mask hole 11 are along the second The direction D2 is alternately repeated one by one.

The width of the first mask portion 21 in the first direction D1 is the first width W1, and the width of the second mask portion 22 in the second direction D2 is the second width W2. The first width W1 of the first mask portion 21 is smaller than the second width W2 of the second mask portion 22.

The metal mask 10 for vapor deposition spreads along a plane defined by the first direction D1 and the second direction D2, and a plurality of mask holes are seen from a direction orthogonal to a direction in which the metal mask 10 for vapor deposition is expanded. 11 series Listed in a staggered arrangement. In other words, a plurality of mask holes 11 are arranged in a staggered arrangement as viewed in a direction opposing the first surface 10a.

In the plan view facing the first surface 10a, each of the mask holes 11 is divided into a rectangular region, and the width of each of the mask holes 11 in the first direction D1 is larger than the second direction of the mask hole 11 The width that D2 has. The plurality of mask holes 11 are arranged at a constant first pitch P1 along the first direction D1.

Among the plurality of mask holes 11, a plurality of mask holes 11 arranged in the first direction D1 constitute one column. Among the plurality of mask holes 11 constituting each row, the positions in the first direction D1 overlap each other in one row. On the other hand, in the column adjacent to each other in the second direction D2, the plurality of mask holes 11 in the other column are formed in the first position with respect to the plurality of mask holes 11 constituting one of the columns in the first direction D1. The position of the direction D1 is offset by 1/2 pitch. The mask holes 11 which overlap in the position of the first direction D1 among the plurality of mask holes 11 are arranged at a constant second pitch P2 in the second direction D2. The second pitch P2 is a value equal to the first pitch P1. The first pitch P1 and the second pitch P2 are generally set to be equal to each other in conformity with the pixel shape.

Among the plurality of mask holes 11 arranged in a staggered arrangement, one first mask portion 21 located between the two mask holes 11 adjacent in the first direction D1 has two mask holes 11 as partitions. Each of the functions of the vapor deposition metal mask 10 is used. Further, between the two mask holes 11 adjacent to each other in the second direction D2, the metal mask 10 for vapor deposition exhibits a function as a function of the second mask portion 22 with respect to the mask hole 11. One of the portions and a portion that functions as a function of the second mask portion 22 with respect to the other mask hole 11 overlap each other.

Further, in the plurality of mask holes 11 arranged in a staggered arrangement, in the columns adjacent to each other in the second direction D2, the offset of the mask holes 11 in the first direction D1 may be less than 1/2 pitch. It can also be larger than 1/2 pitch. Further, in each of the mask holes 11, the width in the first direction D1 and the width in the second direction D2 may be equal to each other.

3 is a cross-sectional structure orthogonal to the first direction D1 in the metal mask 10 for vapor deposition, and shows a cross-sectional structure passing through the center of the first mask portion 21 in the first direction D1. Fig. 3 is a cross-sectional view taken along line I-I of Fig. 2.

As shown in FIG. 3, in the cross section orthogonal to the first direction D1, the thickness of the first mask portion 21 has a minimum value T1m, and the thickness of the second mask portion 22 has a maximum value T2M.

In the cross section orthogonal to the first direction D1, the minimum value T1m of the thickness of the first mask portion 21 is preferably 12.5 μm or more. The ratio of the minimum value T1m of the thickness of the first mask portion 21 to the maximum value T2M of the thickness of the second mask portion 22 is 70% or more. In other words, the minimum value T1m of the thickness of the first mask portion 21 and the maximum value T2M of the thickness of the second mask portion 22 satisfy the following formula (1).

T1m/T2M×100≧70...(1)

According to the vapor deposition metal mask 10, the thickness of the first mask portion 21 is ensured to be 12.5 μm or more in the cross section orthogonal to the first direction D1. Therefore, the difference in strength between the portion of the metal mask 10 for vapor deposition that is connected to the first mask portion 21 and the portion other than the portion to be connected is further suppressed to the portion where the connection of the first mask portion 21 can be suppressed. The degree of bending.

In addition, the difference in the thickness of the metal mask 10 for vapor deposition is suppressed so that the difference between the maximum value T2M of the thickness of the second mask portion 22 and the minimum value T1m of the thickness of the first mask portion 21 is less than 30%. .

Therefore, the difference in strength between the portion in which the first mask portion 21 is connected to the vapor deposition metal mask 10 and the other portions thereof is suppressed to such an extent that the bending of the portion where the first mask portion 21 is connected can be suppressed. As a result, it is possible to suppress the bending which is connected in the direction in which the mask holes 11 are arranged, and in particular, the bending which is connected in the direction in which the first mask portions 21 are arranged is suppressed from being generated in the metal mask 10 for vapor deposition.

Each of the mask holes 11 has a first opening 11a opened in the first surface 10a and a second opening 11b opened in the second surface 10b. Each of the mask holes 11 is composed of a first hole portion 11c including a first opening 11a and a second hole portion 11d including a second opening 11b, and the first hole portion 11c and the second hole portion 11d are made of a metal for vapor deposition. The thickness of the mask 10 is connected in the direction. A portion where the first hole portion 11c and the second hole portion 11d are connected is a continuous portion 11e.

In each of the mask holes 11, the width of the mask hole 11 in the cross section orthogonal to the first direction D1, that is, the width of the mask hole 11 in the second direction D2 is the second mask hole width Wm2. The second mask hole width Wm2 of the first opening 11a is smaller than the second mask hole width Wm2 of the second opening 11b.

The second mask hole width Wm2 of the first hole portion 11c is the largest in the first opening 11a, and gradually decreases toward the continuous portion 11e, and the second mask hole width Wm2 of the second hole portion 11d is the largest in the second opening 11b, and is continuous. The portion 11e gradually becomes smaller. That is, in each of the mask holes 11, the second mask hole width Wm2 in the continuous portion 11e is the smallest. Further, along the first hole portion 11c The length of the vapor deposition metal mask 10 in the thickness direction is smaller than the length along the thickness direction of the vapor deposition metal mask 10 along the second hole portion 11d.

The ratio of the maximum value T2M of the thickness of the second mask portion 22 to the minimum value Wmm2 of the second mask hole width Wm2 is 41% or more. In other words, the minimum value Wmm2 of the second mask hole width Wm2 and the maximum value T2M of the thickness of the second mask portion 22 satisfy the following formula (2).

T2M/Wmm2×100≧41...(2)

In the metal mask 10 for vapor deposition, the larger the width of the second mask hole Wm2 is, the larger the length of the first mask portion 21 along the second direction D2 is. On the other hand, the thickness of the first mask portion 21 is approximately determined by the maximum value T2M of the thickness of the second mask portion 22 sandwiching the first mask portion 21 in the second direction D2, and the maximum value T2M is larger. 1 The thickness of the mask portion 21 is larger.

For this reason, in the metal mask 10 for vapor deposition, the ratio of the maximum value T2M of the thickness of the second mask portion 22 to the minimum value Wmm2 of the second mask hole width Wm2 is 41% or more. The other portions of the metal mask 10 for vapor deposition are smaller in size, and the strength of each of the first mask portions 21 is not concentrated in the size of the first mask portion 21.

As shown in FIG. 4, the surface on which the second hole portion 11d is divided is the second inner circumferential surface 11dp, and the second inner circumferential surface 11dp has the first arc-shaped portion dp1 and the second portion in the cross section orthogonal to the first direction D1. The arc portion dp2 and the inflection portion dp3. In the second inner circumferential surface 11dp, the two first arc-shaped portions dp1 are opposed to each other in the second direction D2, the two second arc-shaped portions dp2 are opposed to each other in the second direction D2, and the two inflection portions dp3 are It is opposite in the second direction D2.

The first arcuate portion dp1 includes a continuous portion 11e, and the second arcuate portion dp2 includes a second opening 11b. The radius of curvature of the first arcuate portion dp1 and the radius of curvature of the second arcuate portion dp2 are different from each other, and the radius of curvature of the first arcuate portion dp1 is larger than the radius of curvature of the second arcuate portion dp2. The inflection portion dp3 is a portion where the first arc portion dp1 is connected to the second arc portion dp2. Each of the first arc-shaped portion dp1 and the second arc-shaped portion dp2 has a curvature such that the center of the curvature of each of the arc-shaped portions is located outside the metal mask 10 for vapor deposition.

The surface on which the first hole portion 11c is divided is the first inner circumferential surface 11cp, and the first inner circumferential surface 11cp has a first arc portion including the first opening 11a and the continuous portion 11e in a cross section orthogonal to the first direction D1. Cp1. In the first inner circumferential surface 11cp, the two first arcuate portions cp1 are opposed to each other in the second direction D2. In the first arcuate portion cp1, the center of the curvature of the first arcuate portion cp1 has a curvature as located outside the metal mask 10 for vapor deposition.

FIG. 5 is a cross-sectional structure orthogonal to the second direction D2 in the metal mask 10 for vapor deposition, and shows a cross-sectional structure passing through the center of the first mask portion 21 in the second direction D2. Fig. 5 is a cross-sectional view taken along line II-II of Fig. 2.

As shown in FIG. 5, in the cross section orthogonal to the second direction D2, the first mask portion 21 has a maximum value T1M. The ratio of the maximum value T1M of the thickness of the first mask portion 21 to the first pitch P1 in the first direction D1 described above is 6% or more. In other words, the first pitch P1 along the first direction D1 and the maximum value T1M of the first mask portion 21 satisfy the following formula (3).

T1M/P1×100≧6...(3)

The first pitch P1 along the first direction D1 constitutes a minimum unit of the first mask portion 21 and the space, which is an element of the metal mask 10 for vapor deposition. In addition, the first mask portion 21 is a portion that is maintained at a predetermined size regardless of the size of the organic layer formed by the metal mask 10 for vapor deposition. The size of the first mask portion 21 is determined, for example, by the size of a peripheral circuit or the like, and is a portion having a minimum size in terms of improving the luminous efficiency of the organic EL display. On the other hand, the space included in the first pitch P1 is a portion that changes in accordance with the resolution required by the organic EL display or the like.

For this reason, in the metal mask 10 for vapor deposition, even if the size of the first pitch P1 is changed, that is, the size of the space included in the first pitch P1 is changed, the maximum value T1M of the thickness of the first mask portion 21 is also changed. Maintain a certain size or more. Therefore, in the metal mask 10 for vapor deposition, it is possible to suppress the first mask portion 21 from being bent.

In the cross section orthogonal to the second direction D2, the first mask portion 21 has a substantially pentagonal shape. Therefore, the first mask portion 21 has a maximum value T1M of the thickness among the vertices having the largest distance from the side along the first surface 10a.

In each of the mask holes 11, the width of the mask hole 11 having a cross section orthogonal to the second direction D2, that is, the width of the mask hole 11 in the first direction D1 is the first mask hole width Wm1. The first mask hole width Wm1 of the first opening 11a is smaller than the first mask hole width Wm1 of the second opening 11b.

The first mask hole width Wm1 has a minimum value Wmm1 in the middle of the direction from the first opening 11a toward the second opening 11b. The maximum value T1M of the thickness of the first mask portion 21 with respect to the first mask hole The ratio of the minimum value Wmm1 of the width Wm1 is 7% or more. In other words, the minimum value Wmm1 of the first mask hole width Wm1 and the maximum value T1M of the thickness of the first mask portion 21 satisfy the following formula (4).

T1M/Wmm1×100≧7...(4)

In the metal mask 10 for vapor deposition, the larger the maximum value T1M of the thickness of the first mask portion 21 in which the mask hole 11 is divided in the first direction D1 with respect to the width of the mask hole 11, the metal for vapor deposition The higher the strength of the mask 10, the width of the mask hole 11 is the space extending in the first direction D1.

For this reason, in the metal mask 10 for vapor deposition, the ratio of the maximum value T1M of the thickness of the first mask portion 21 to the minimum value Wmm1 of the width Wm1 of the first mask hole is 7% or more, so that it is steamed. In the other portions of the metal mask 10 for plating, the strength of each of the first mask portions 21 is not more concentrated in the size of the first mask portion 21.

Further, the use of such a metal mask 10 for vapor deposition to form an organic layer on a film formation target is carried out as follows. In the following, the first direction D1 and the second direction D2 of the vapor deposition metal mask 10 are described in correspondence with the first direction D1 and the second direction D2 of the film formation target after film formation.

For example, when an organic layer is formed, first, a metal mask 10 for vapor deposition is used, and a blue organic layer is formed on a film formation target. Next, using another metal mask for vapor deposition, a green organic layer and a red color are formed between the blue organic layers in the second direction D2 and the second direction D2 adjacent to the one blue organic layer. The organic layers are formed to be aligned in the first direction D1.

Further, for example, first, a blue organic layer is formed on the film formation target by using the metal mask 10 for vapor deposition. Next, using another metal mask for vapor deposition, a green organic layer and a red layer are formed between the blue organic layers in the second direction D2 and the second direction D2 adjacent to the one blue organic layer. The organic layers are formed to be aligned in the second direction D2.

[Manufacturing method of metal mask for vapor deposition]

A method of manufacturing the metal mask 10 for vapor deposition will be described with reference to Figs. 6 to 11 . Further, each of FIGS. 6 to 11 is a cross-sectional configuration with respect to a cross section taken along the line I-I of FIG. 2, and is a cross-sectional configuration corresponding to each manufacturing step.

As shown in FIG. 6, when the metal mask 10 for vapor deposition is manufactured, first, the metal mask base 31 for forming the metal mask 10 for vapor deposition is prepared. The metal mask substrate 31 is preferably made of a constant steel, and the metal mask substrate 31 preferably has a thickness of, for example, 20 μm or more and 50 μm or less.

The metal mask substrate 31 has a first surface 31a and a second surface 31b, and the second surface 31b is a surface opposite to the first surface 31a. The first surface 31a of the metal mask substrate 31 is opposed to the first surface 10a of the vapor deposition metal mask 10, and the second surface 31b of the metal mask substrate 31 is opposed to the vapor deposition metal mask 10 2 faces 10b.

The first resist layer 32 is formed on the first surface 31a of the metal mask substrate 31, and the second resist layer 33 is formed on the second surface 31b. Each of the resist layers may be formed on the metal mask substrate 31 by attaching a dry film resist, or may be formed by forming a resist layer-containing material. The coating liquid is applied to the surface to form. The material for forming the resist layer is preferably a negative resist material or a positive resist material.

As shown in FIG. 7, the first resist pattern 34 is formed by removing a part of the first resist layer 32 from the first surface 31a of the metal mask substrate 31. Moreover, the second resist pattern 35 is formed by removing a part of the second resist layer 33 from the second surface 31b of the metal mask substrate 31. When each of the resist patterns is formed, if it is a negative resist layer, only a portion of the resist layer remaining on the metal mask substrate 31 as a resist pattern is exposed. Then, the exposed resist layer is developed. Further, in the case of the positive resist layer, the portion removed from the metal mask substrate 31 in the resist layer may be used.

Further, the exposure of the first resist layer 32 and the exposure of the second resist layer 33 may be performed simultaneously or separately. Further, the development of the first resist layer 32 and the development of the second resist layer 33 may be performed simultaneously or separately.

The first resist pattern 34 has a plurality of first pattern portions 34a and a plurality of second pattern portions 34b. The first resist pattern 34 is used to form the first hole portion 11c of the plurality of mask holes 11 in the resist pattern of the metal mask substrate 31. In addition, each of the first pattern portions 34a is for dividing the pattern portion of the first mask portion 21 in the metal mask substrate 31, and each of the second pattern portions 34b is used to divide the second mask portion 31 into the second mask portion 31. The pattern portion of the mask portion 22.

The second resist pattern 35 has a plurality of first pattern portions 35a and a plurality of second pattern portions 35b. The second resist pattern 35 is for forming the second hole portion 11d of the plurality of mask holes 11 in the metal mask base. The resist pattern of the material 31. Similarly to the first resist pattern 34, each of the first pattern portions 35a is used to divide the pattern portion of the first mask portion 21 on the metal mask substrate 31, and each of the second pattern portions 35b is used for the metal mask. The pattern portion of the second mask portion 22 is divided by the base material 31.

FIG. 8 is a plan view showing a plan view of the first resist pattern 34 in a plan view facing the first surface 31a of the metal mask substrate 31. In addition, in FIG. 8, in order to make it easy to understand the shape of the 1st resist pattern 34, it is convenient to attach a point to the 1st resist pattern 34.

As shown in FIG. 8 , in a plan view facing the first surface 31 a of the metal mask base 31 , the first pattern portion 34 a extends in the second direction D2 and is vacated in the first direction D1. Arranged at intervals. In the first direction D1, the pitch in which the first pattern portion 34a is repeated is substantially equal to the pitch in which the first mask portion 21 in the vapor deposition metal mask 10 overlaps in the first direction D1.

The second pattern portion 34b extends in the first direction D1, and the two second pattern portions 34b adjacent in the second direction D2 are separated from each other by the length of the first pattern portion 34a. The width W34a of the first pattern portion 34a in the first direction D1 is smaller than the width W34b of the second pattern portion 34b in the second direction D2.

FIG. 9 is a plan view showing a plan view of the second resist pattern 35 in a plan view facing the second surface 31b of the metal mask substrate 31. Further, in FIG. 9, in order to make it easy to understand the shape of the second resist pattern 35, a dot is added to the second resist pattern 35 for the sake of convenience.

As shown in FIG. 9, in the plan view facing the second surface 31b of the metal mask substrate 31, the first pattern portion 35a is along the second The direction D2 extends and is arranged at a certain interval along the first direction D1. In the first direction D1, the pitch in which the first pattern portion 35a is repeated is substantially equal to the pitch in which the first mask portion 21 in the vapor deposition metal mask 10 overlaps in the first direction D1.

The second pattern portion 35b extends in the first direction D1, and the two second pattern portions 35b adjacent in the second direction D2 are separated from each other by the length of the first pattern portion 35a. The second pattern portion 35b has a gap 35c extending in the first direction D1, and the gap 35c is located at the center of the second direction D2 of each of the second pattern portions 35b.

The width W35c of the gap 35c in the second direction D2 is smaller than the distance between the two second pattern portions 35b in the second direction D2, that is, the width W35a2 of the first pattern portion 35a in the second direction D2. Further, the width W35a1 of the first pattern portion 35a in the first direction D1 is smaller than the width W35b of the second pattern portion 35b in the second direction D2.

The first pattern portion 35a is located between the second pattern portions 35b adjacent to each other in the second direction D2, and is connected to the two second pattern portions 35b sandwiching the first pattern portion 35a in the second direction D2.

As shown in FIG. 10, the metal mask substrate 31 is etched from the first surface 31a by using the first resist pattern 34. In addition, FIG. 10 shows a state of the metal mask substrate 31 in the middle of etching the metal mask substrate 31 from the first surface 31a. When the metal mask substrate 31 is made of a constant steel, for example, a ferric chloride solution can be used as the etching solution for the metal mask substrate 31.

Further, when the metal mask substrate 31 is etched from the first surface 31a, the second resist pattern 35 is connected to the metal mask base before the metal mask substrate 31 is etched. The second protective layer 36 is formed on the side opposite to the surface of the material 31.

The second protective layer 36 is a layer for preventing the metal mask substrate 31 from being etched from the second surface 31b when the metal mask substrate 31 is etched from the first surface 31a. The material for forming the second protective layer 36 may be any material that is resistant to the etching solution of the metal mask substrate 31.

After the etching of the metal mask substrate 31 by using the first resist pattern 34 is completed, the second protective layer 36 is removed from the second resist pattern 35, and the first resist pattern 34 is removed from the metal mask base. The first surface 31a of the material 31 is peeled off.

As shown in FIG. 11, the metal mask substrate 31 is etched from the second surface 31b by using the second resist pattern 35. In addition, FIG. 11 shows a state of the metal mask substrate 31 in the middle of etching the metal mask substrate 31 from the second surface 31b. When the metal mask substrate 31 is made of a constant steel, for example, a ferric chloride solution can be used as the etching solution for the metal mask substrate 31.

In addition, when the metal mask substrate 31 is etched from the second surface 31b, the first surface 31a of the metal mask substrate 31 is formed first before the metal mask substrate 31 is etched. Protective layer 37.

The first protective layer 37 is a layer for preventing the metal mask substrate 31 from being etched from the first surface 31a when the metal mask substrate 31 is etched from the second surface 31b. The forming material of the first protective layer 37 is only It suffices that it is resistant to the etching solution of the metal mask substrate 31.

After the etching of the metal mask substrate 31 by the second resist pattern 35 is completed, the first protective layer 37 is removed from the first surface 31a of the metal mask substrate 31, and the second resist pattern 35 is removed. Stripped from the second surface 31b. Thereby, the metal mask 10 for vapor deposition can be obtained.

When the metal mask substrate 31 is etched from the second surface 31b, the portion of the metal mask substrate 31 that is exposed from the second resist pattern 35 has a higher etching speed. Therefore, in the thickness direction of the metal mask substrate 31, the etching rate of the portion overlapping the gap 35c with the second pattern portion 35b in the metal mask substrate 31 is located between the second pattern portions 35b. The etching speed of the part is high.

Thereby, a portion having a large etching amount and a portion having a small etching amount can be formed on the metal mask substrate 31. As a result, in the cross section orthogonal to the first direction D1, the ratio of the minimum value T1m of the thickness of the first mask portion 21 to the maximum value T2M of the thickness of the second mask portion 22 is 70% or more, and The metal mask 10 for vapor deposition is 41% or more with respect to the minimum value T2M of the thickness of the second mask portion 22 with respect to the minimum value Wmm2 of the second mask hole width Wm2.

[Examples]

Embodiments and comparative examples will be described with reference to Figs. 12 to 14 . Further, in the first to third embodiments to be described below, the thicknesses of the metal mask substrates used in the production of the metal mask for vapor deposition of the respective examples are different from each other. However, the ratio of the minimum value T1m of each metal mask for vapor deposition to the maximum value T2M and the maximum value T2M are wider than the width of the second mask. The ratio of the minimum value Wmm2 of the degree Wm2, the ratio of the maximum value T1M to the first pitch P1, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1 are substantially equal values between the examples. . Therefore, for convenience, the metal mask for vapor deposition of Examples 1 to 3 will be described with reference to one figure.

In addition, in the comparative examples 1, 3, and 5, the thickness of the metal mask base material used for the manufacture of the metal mask for vapor deposition of each comparative example differs from each other. The ratio of the minimum value T1m of each metal mask for vapor deposition to the maximum value T2M, the ratio of the maximum value T2M of the second mask hole width Wm2 to the minimum value Wmm2, and the maximum value T1M with respect to the first pitch P1. The ratio of the ratio and the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1 is substantially equal between the comparative examples. Therefore, the vapor deposition metals of Comparative Examples 1, 3, and 5 were masked.

In addition, in Comparative Examples 2, 4, and 6, the thickness of the metal mask base material used for the metal mask for vapor deposition of each comparative example differs from each other. The ratio of the minimum value T1m of each metal mask for vapor deposition to the maximum value T2M, the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2, and the maximum value T1M with respect to the first pitch P1. The ratio of the ratio and the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1 is substantially equal between the comparative examples. Therefore, for convenience, the metal mask for vapor deposition of Comparative Examples 2, 4, and 6 will be described with reference to one figure.

[Example 1]

A substrate for a metal mask having a constant steel and having a thickness of 30 μm was prepared. By attaching a negative dry film resist to the metal mask The first resist layer is formed on the first surface of the base material of the base material, and the negative dry film resist is attached to the second surface of the base material for the metal mask. On the other hand, the second resist layer is formed on the second surface of the metal mask substrate.

The first resist layer is patterned to form a first resist pattern having the following shape. In the first resist pattern, the distance between the first pattern portions existing in the first direction is 195 μm, the length of the first pattern portion in the first direction is 30.0 μm, and the length of the first pattern portion in the second direction is 33.5. Mm. Further, in the first resist pattern, the length of the second pattern portion in the second direction is 64.0 μm.

The second resist layer is patterned to form a second resist pattern having the following shape. In the second resist pattern, the distance between the first pattern portions existing in the first direction is 195 μm, the length of the first pattern portion in the first direction is 16.5 μm, and the length of the first pattern portion in the second direction is 58.3. Mm. Further, in the second resist pattern, the length of the second pattern portion in the second direction is 39.1 μm, and the gap length of the second pattern portion is 10.3 μm. In other words, each of the two portions existing in the second pattern portion with a gap in the second direction is 14.4 μm in the second direction.

Next, the metal mask substrate was etched using a ferric chloride solution, whereby the metal mask for vapor deposition of Example 1 was obtained. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 195 μm .

As shown in FIG. 12, in the cross section orthogonal to the first direction D1, it is confirmed that the thickness of the first mask portion 21 has a minimum value T1m, 2 The thickness of the mask portion 22 has a maximum value T2M, and it is confirmed that the minimum value T1m is 12.5 μm, and the maximum value T2M is 17.7 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 70.6%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.4%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 42.6 μm, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 41.5%.

In the first embodiment, as described above using FIG. 5, it is confirmed that the first mask portion 21 has a substantially pentagonal shape in a cross section orthogonal to the second direction D2. Further, it was confirmed that the first mask portion 21 has a maximum value T1M and the maximum value T1M is 12.5 μm. As described above, it was confirmed that the ratio of the maximum value T1M to the first pitch P1 was 6.4% because the first pitch P1 in which the plurality of mask holes were arranged in the first direction D1 was 195 μm.

In the cross section orthogonal to the second direction D2, it is confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 167.9 μm, and the minimum value Wmm1 of the maximum value T1M with respect to the first mask hole width Wm1 is confirmed. The ratio is 7.4%.

[Embodiment 2]

A metal mask substrate having a constant thickness of steel and having a thickness of 25 μm was prepared. In addition, the metal mask for vapor deposition of Example 2 was obtained by the same method as that of Example 1 except that the size of the first resist pattern and the size of the second resist pattern were changed as follows. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 162.5 Mm.

In the first resist pattern, the distance between the first pattern portions existing along the first direction is 162.5 μm, and the length of the first pattern portion existing along the first direction is 25 μm, and the first pattern portion is along the second direction. The length is 27.9 μm. Further, in the first resist pattern, the length of the second pattern portion in the second direction is 53.3 μm.

In the second resist pattern, the distance between the first pattern portions existing in the first direction is 162.5 μm, the length of the first pattern portion in the first direction is 13.8 μm, and the length of the first pattern portion in the second direction is 48.6 μm. Further, in the second resist pattern, the length of the second pattern portion in the second direction is 32.6 μm, and the gap length of the second pattern portion is 8.6 μm. In other words, each of the two portions in which the gap exists in the second direction in the second pattern portion has a length in the second direction of 12.0 μm.

As shown in FIG. 12, in the metal mask 10 for vapor deposition of the second embodiment, the minimum value T1m of the thickness of the first mask portion 21 was 10.4 μm in the cross section orthogonal to the first direction D1. The maximum value T2M of the thickness of the second mask portion 22 is 14.8 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 70.3%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.4%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 35.8 μm, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 41.3%.

In the cross section orthogonal to the second direction D2, the maximum value T1M of the thickness of the first mask portion 21 was 10.4 μm. When the first pitch P1 in which the plurality of mask holes 11 are arranged in the first direction D1 is 162.5 μm, the ratio of the maximum value T1M to the first pitch P1 is 6.4%.

Moreover, in the cross section orthogonal to the second direction D2, it was confirmed that the minimum value Wmm1 of the first mask hole width Wm1 was 139.0 μm, and the minimum value T1M of the maximum value T1M with respect to the first mask hole width Wm1 was confirmed. The ratio is 7.5%.

[Example 3]

A substrate for a metal mask having a constant steel and having a thickness of 20 μm was prepared. In addition, the metal mask for vapor deposition of Example 3 was obtained by the same method as that of Example 1 except that the size of the first resist pattern and the size of the second resist pattern were changed as follows. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 130 μm .

In the first resist pattern, the distance between the first pattern portions existing along the first direction is 130 μm, the length of the first pattern portion in the first direction is 20 μm, and the length of the first pattern portion in the second direction is 22.3 μm. . Further, in the first resist pattern, the length of the second pattern portion in the second direction is 42.7 μm.

In the second resist pattern, the distance between the first pattern portions existing in the first direction is 130 μm, the length of the first pattern portion in the first direction is 11 μm, and the length of the first pattern portion in the second direction is 38.9 μm. . Further, in the second resist pattern, the length of the second pattern portion in the second direction is 26.1 μm, and the gap length of the second pattern portion is 6.9 μm. In other words, each of the two portions existing in the second pattern portion with a gap in the second direction is 9.6 μm in the second direction.

As shown in FIG. 12, in the metal mask 10 for vapor deposition of the third embodiment, the minimum value T1m of the thickness of the first mask portion 21 was 8.8 μm in the cross section orthogonal to the first direction D1. The maximum value T2M of the thickness of the second mask portion 22 is 11.9 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 73.9%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 6.8%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 28.4 μm, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 41.9%.

In the metal mask 10 for vapor deposition of the third embodiment, the maximum value T1M of the thickness of the first mask portion 21 was 8.8 μm in the cross section orthogonal to the second direction D2. It was confirmed that the first pitch P1 in which the plurality of mask holes 11 are arranged in the first direction D1 is 130 μm, so the ratio of the maximum value T2M to the first pitch P1 is 6.8%.

In the cross section orthogonal to the second direction D2, it was confirmed that the minimum value Wmm1 of the first mask hole width Wm1 was 112.2 μm, and the minimum value T1M of the maximum mask value Wm1 with respect to the first mask hole width Wm1 was confirmed. The ratio is 7.8%.

[Comparative Example 1]

A substrate for a metal mask having a constant steel and having a thickness of 30 μm was prepared. In addition, the size of the first resist pattern and the size of the second resist pattern are changed as follows, and a pattern portion having no gap is formed as the second resist pattern of the second pattern portion, and the remaining portions are used and implemented. In the same manner as in Example 1, a metal mask for vapor deposition of Comparative Example 1 was obtained. In the plan view facing the first face, the complex existing along the first direction The first pitch P1 of the plurality of mask holes and the second pitch P2 of the plurality of mask holes existing along the second direction are 195 μm.

In the first resist pattern, the distance between the first pattern portions existing in the first direction is 195 μm, the length of the first pattern portion in the first direction is 27.9 μm, and the length of the first pattern portion in the second direction is 36.6. Mm. Further, in the first resist pattern, the length of the second pattern portion in the second direction is 60.9 μm.

In the second resist pattern, the distance between the first pattern portions existing along the first direction is 195 μm, the length of the first pattern portion existing along the first direction is 5.2 μm, and the first pattern portion is along the second direction. The length is 76.9 μm. Further, in the second resist pattern, the length of the second pattern portion in the second direction is 20.6 μm.

As shown in FIG. 13 , in the cross-section orthogonal to the first direction D1, the thickness of the first mask portion 41 has a minimum value T1m and the second portion is obtained in the vapor deposition metal mask 40 of the first embodiment. The thickness of the mask portion 42 has a maximum value T2M, and it is confirmed that the minimum value T1m is 9.7 μm, and the maximum value T2M is 20.8 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 46.6%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.0%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 42.3 μm, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 49.2%.

In the first comparative example, as in the first embodiment, it was confirmed that the first mask portion 41 has a substantially pentagonal shape in the cross section orthogonal to the second direction D2. Further, it is confirmed that the first mask portion 41 has a maximum value. At T1M, it was confirmed that the maximum value T1M was 9.7 μm. As described above, it was confirmed that the ratio of the maximum value T1M to the first pitch P1 was 5.0% because the first pitch P1 in which the plurality of mask holes were arranged in the first direction D1 was 195 μm.

In the cross section orthogonal to the second direction D2, it was confirmed that the minimum value Wmm1 of the first mask hole width Wm1 was 165.9 μm, and the minimum value Wmm1 of the maximum value T1M with respect to the first mask hole width Wm1 was confirmed. The ratio is 5.8%.

[Comparative Example 2]

A substrate for a metal mask having a constant steel and having a thickness of 30 μm was prepared. In addition, the metal mask for vapor deposition of Comparative Example 2 was obtained in the same manner as in Example 1 except that the size of the second resist pattern was changed as follows. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 195 μm .

In other words, in the second resist pattern, the distance between the first pattern portions existing along the first direction is 195 μm, and the length of the first pattern portion existing along the first direction is 16.5 μm, and exists along the second direction. The length of the first pattern portion is 58.3 μm. Further, in the second resist pattern, the length of the second pattern portion in the second direction was 39.2 μm, and the gap length of the second pattern portion was 14.4 μm. In other words, each of the two portions existing in the second pattern portion with a gap in the second direction is 12.4 μm in the second direction.

As shown in FIG. 14 , in the metal mask 50 for vapor deposition of Comparative Example 2, it is confirmed that the thickness of the first mask portion 51 has a minimum value T1m in the cross section orthogonal to the first direction D1, and the second mask Thickness of the cover portion 52 The degree has a maximum value of T2M, and it is confirmed that the minimum value T1m is 10.4 μm, and the maximum value T2M is 12.7 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 81.9%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.3%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 42.6 μm, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 29.8%.

In the second comparative example, as in the first embodiment, it was confirmed that the first mask portion 51 has a substantially pentagonal shape in the cross section orthogonal to the second direction D2. Further, it was confirmed that the first mask portion 51 has the maximum value T1M, and it was confirmed that the maximum value T1M was 10.4 μm. As described above, it was confirmed that the ratio of the maximum value T1M to the first pitch P1 was 5.3% because the first pitch P1 in which the plurality of mask holes were arranged in the first direction D1 was 195 μm.

Further, in the cross section orthogonal to the second direction D2, it is confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 165.6 μm, and the ratio of the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1 is 6.3%.

[Comparative Example 3]

A metal mask substrate having a constant thickness of steel and having a thickness of 25 μm was prepared. In addition, the size of the first resist pattern and the size of the second resist pattern are changed as follows, and a pattern portion having no gap is formed as the second resist pattern of the second pattern portion, and the remaining portions are used and implemented. In the same manner as in Example 2, a metal mask for vapor deposition of Comparative Example 3 was obtained. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 162.5 Mm.

In the first resist pattern, the distance between the first pattern portions existing along the first direction is 162.5 μm, the length of the first pattern portion in the first direction is 25 μm, and the length of the first pattern portion in the second direction is 30.5. Mm. Further, in the first resist pattern, the length of the second pattern portion in the second direction is 50.8 μm.

In the second resist pattern, the distance between the first pattern portions existing in the first direction is 162.5 μm, the length of the first pattern portion in the first direction is 4.3 μm, and the length of the first pattern portion in the second direction is 64.1 μm. Further, in the second resist pattern, the length of the second pattern portion in the second direction was 17.2 μm.

As shown in FIG. 13 , in the cross-section orthogonal to the first direction D1, the minimum value T1m of the thickness of the first mask portion 41 is 8.0 μm. The maximum value T2M of the thickness of the second mask portion 42 is 17.4 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 46.0%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 4.9%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 35.1 μm, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 49.6%.

In the cross section orthogonal to the second direction D2, the maximum value T1M of the thickness of the first mask portion 41 was 8.0 μm. It was confirmed that the ratio of the maximum value T1M to the first pitch P1 was 4.9% because the first pitch P1 in which the plurality of mask holes 43 were arranged in the first direction D1 was 162.5 μm.

Moreover, in the cross section orthogonal to the second direction D2, it was confirmed that the minimum value Wmm1 of the first mask hole width Wm1 was 138.5 μm, and the minimum value T1M of the maximum value T1M with respect to the first mask hole width Wm1 was confirmed. The ratio is 5.8%.

[Comparative Example 4]

A metal mask substrate having a constant thickness of steel and having a thickness of 25 μm was prepared. In addition, the metal mask for vapor deposition of Comparative Example 4 was obtained in the same manner as in Example 2 except that the size of the second resist pattern was changed as follows. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 162.5 Mm.

In other words, in the second resist pattern, the distance between the first pattern portions existing along the first direction is 162.5 μm, the length of the first pattern portion in the first direction is 13.8 μm, and the first pattern portion is along the second direction. The length is 48.6 μm. Further, in the second resist pattern, the length of the second pattern portion in the second direction is 32.7 μm, and the gap length of the second pattern portion is 12.0 μm. In other words, each of the two portions existing in the second pattern portion with a gap in the second direction is 10.3 μm in the second direction.

As shown in FIG. 14 , in the cross-section orthogonal to the first direction D1, the minimum value T1m of the thickness of the first mask portion 51 is 8.3 μm. The maximum value T2M of the thickness of the second mask portion 52 is 10.4 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 79.8%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.1%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 35.2 μm, and the ratio of the maximum value T1M to the minimum value Wmm2 of the second mask hole width Wm2 was 29.5%.

In the cross section orthogonal to the second direction D2, the maximum value T1M of the thickness of the first mask portion 51 was 8.3 μm. It was confirmed that the first pitch P1 in which the plurality of mask holes 53 are arranged in the first direction D1 is 162.5 μm, so the ratio of the maximum value T1M to the first pitch P1 is 5.1%.

Moreover, in the cross section orthogonal to the second direction D2, it was confirmed that the minimum value Wmm1 of the first mask hole width Wm1 was 138.0 μm, and the minimum value T1M of the maximum value T1M with respect to the first mask hole width Wm1 was confirmed. The ratio is 6.0%.

[Comparative Example 5]

A substrate for a metal mask having a constant steel and having a thickness of 20 μm was prepared. In addition, the size of the first resist pattern and the size of the second resist pattern are changed as follows, and a pattern portion having no gap is formed as the second resist pattern of the second pattern portion, and the remaining portions are used and implemented. In the same manner as in Example 3, the metal mask for vapor deposition of Comparative Example 5 was obtained. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 130 μm .

In the first resist pattern, the distance between the first pattern portions existing in the first direction is 130 μm, the length of the first pattern portion in the first direction is 20 μm, and the length of the first pattern portion in the second direction is 24.4 μm. . Further, in the first resist pattern, the length of the second pattern portion in the second direction is 40.6 μm.

In the second resist pattern, the distance between the first pattern portions existing in the first direction is 130 μm, the length of the first pattern portion in the first direction is 3.5 μm, and the length of the first pattern portion in the second direction is 51.3. Mm. Further, in the second resist pattern, the length of the second pattern portion in the second direction was 17.2 μm.

As shown in FIG. 13 , in the cross section orthogonal to the first direction D1, the minimum value T1m of the thickness of the first mask portion 41 was 7.0 μm. The maximum value T2M of the thickness of the second mask portion 42 is 13.7 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 51.1%. Further, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.4%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 27.7 μm, and the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 was 49.5%.

In the cross section orthogonal to the second direction D2, the maximum value T1M of the thickness of the first mask portion 41 was 7.0 μm. It was confirmed that the first pitch P1 in which the plurality of mask holes 43 are arranged in the first direction D1 is 130 μm, so the ratio of the maximum value T1M to the first pitch P1 is 5.4%.

In the cross section orthogonal to the second direction D2, it is confirmed that the minimum value Wmm1 of the first mask hole width Wm1 is 110.6 μm, and the minimum value T1M of the maximum mask value Wm1 with respect to the first mask hole width Wm1 is confirmed. The ratio is 6.3%.

[Comparative Example 6]

A substrate for a metal mask having a constant steel and having a thickness of 20 μm was prepared. In addition, the metal mask for vapor deposition of Comparative Example 6 was obtained in the same manner as in Example 3 except that the size of the second resist pattern was changed as follows. In the plan view facing the first direction, the first pitch P1 of the plurality of mask holes existing along the first direction and the second pitch P2 of the plurality of mask holes existing along the second direction are 130 μm .

In other words, in the second resist pattern, the distance between the first pattern portions existing along the first direction is 130 μm, the length of the first pattern portion in the first direction is 11.0 μm, and the first pattern portion is along the second direction. The length is 38.9 μm. Further, in the second resist pattern, the length of the second pattern portion in the second direction is 26.1 μm, and the length of the gap in the second pattern portion is 9.6 μm. In other words, each of the two portions existing in the second pattern portion with a gap in the second direction is 8.3 μm in the second direction.

As shown in FIG. 14 , in the cross-section orthogonal to the first direction D1, the minimum value T1m of the thickness of the first mask portion 51 is 7.3 μm. The maximum value T2M of the thickness of the second mask portion 52 is 8.2 μm. That is, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M was 89.0%. Furthermore, it was confirmed that the ratio of the minimum value T1m to the second pitch P2 was 5.6%.

Further, it was confirmed that the minimum value Wmm2 of the second mask hole width Wm2 was 28.1 μm, and the ratio of the maximum value T1M to the minimum value Wmm2 of the second mask hole width Wm2 was 29.2%.

In the vapor deposition metal mask 50 of Comparative Example 6, the second mask portion 52 was confirmed in the cross section orthogonal to the second direction D2. The maximum value T1M is 7.3 μm. It was confirmed that the first pitch P1 in which the plurality of mask holes 53 are arranged in the first direction D1 is 130 μm, so the ratio of the maximum value T1M to the first pitch P1 is 5.6%.

Moreover, in the cross section orthogonal to the second direction D2, it was confirmed that the minimum value Wmm1 of the first mask hole width Wm1 was 110.0 μm, and the minimum value T1M of the maximum value T1M with respect to the first mask hole width Wm1 was confirmed. The ratio is 6.6%.

[Evaluation]

After each metal mask for vapor deposition was produced, it was evaluated whether or not the bending in the direction in which the first mask portion was connected was generated in the metal mask for vapor deposition. As described above, in each of the examples and the comparative examples, the ratio of the maximum value T2M, the minimum value T1m, the minimum value T1m to the maximum value T2M, and the second mask in the cross section orthogonal to the first direction D1. The ratio of the minimum value Wmm2 of the hole width Wm2, the minimum value W2M of the maximum value T2M to the minimum width Wmm2 of the second mask hole width Wm2, and the ratio of the minimum value T1m to the second pitch P2 are shown in the following Table 1. Further, in each of the examples and the comparative examples, the maximum value T1M in the cross section orthogonal to the second direction D2, the ratio of the maximum value T1M to the first pitch P1, and the minimum value of the first mask hole width Wm1. The ratio of Wmm1 and the maximum value T1M to the minimum value Wmm1 of the first mask hole width Wm1 is shown in the following Table 1.

It was confirmed that in the metal mask 10 for vapor deposition of the first to third embodiments, the bending in the direction in which the first mask portions 21 are connected is not generated. On the other hand, in the metal mask 40 for vapor deposition of Comparative Example 1, the metal mask 40 for vapor deposition of Comparative Example 3, and the metal mask 40 for vapor deposition of Comparative Example 5, it was confirmed that it was in the first mask portion. The bending in the direction in which the 41 is connected is generated in substantially the entire metal mask 40 for vapor deposition. In addition, the metal mask 50 for vapor deposition of Comparative Example 2, the metal mask 50 for vapor deposition of Comparative Example 4, and the metal mask 50 for vapor deposition of Comparative Example 6 were connected to each other in the first mask portion 51. The bending in the direction is generated in a part of the metal mask 50 for vapor deposition.

As described above, in the metal mask 10 for vapor deposition of each of the examples, it was confirmed that the ratio of the minimum value T1m to the maximum value T2M is 70% or more, and the maximum value T2M is larger than the second mask hole width Wm2. When the ratio of the minimum value Wmm2 is 41% or more, the bending in the direction in which the first mask portion 21 is connected can be suppressed.

In contrast, in the metal mask 40 for vapor deposition of Comparative Example 1, the metal mask 40 for vapor deposition of Comparative Example 3, and the metal mask 40 for vapor deposition of Comparative Example 5, the maximum value T2M is relative to the second The ratio of the minimum value Wmm2 of the mask hole width Wm2 is 41% or more, but the ratio of the minimum value T1m to the maximum value T2M is less than 70%. Therefore, it is considered that the strength of the portion of the metal mask 40 for vapor deposition that is connected to the first mask portion 41 is reduced to the extent that the bending is concentrated on the first mask portion 41 as compared with the strength of the other portions. As a result, as a result, the entire metal mask 40 for vapor deposition is bent.

Further, in the metal mask 50 for vapor deposition of Comparative Example 2, the metal mask 50 for vapor deposition of Comparative Example 4, and the metal mask 50 for vapor deposition of Comparative Example 6, the minimum value T1m is relative to the maximum value T2M. When the ratio is 70% or more, the variation in thickness in the cross section orthogonal to the first direction D1 can be suppressed, but the ratio of the maximum value T2M to the minimum value Wmm2 of the second mask hole width Wm2 is less than 41%. Therefore, in the metal mask 50 for vapor deposition, the strength of the portion where the first mask portion 51 is connected is smaller than the strength of the other portions, and the bending is concentrated on the first mask portion 51. As a result of the extent of the portion of the portion, a portion of the metal mask 50 for vapor deposition is bent.

As described above, according to an embodiment of the metal mask for vapor deposition, the following effects can be obtained.

(1) Since the variation in the thickness of the metal mask 10 for vapor deposition can be suppressed, the first mask portion 21 is connected to the metal mask 10 for vapor deposition. The difference in strength between the portion and the other portions is suppressed to such an extent that the bending of the portion where the first mask portion 21 is connected can be suppressed. Therefore, it is possible to suppress the occurrence of the bending in the direction along which the mask holes 11 are arranged in the metal mask 10 for vapor deposition.

(2) Since the ratio of the maximum value T2M of the thickness of the second mask portion 22 to the minimum value Wmm2 of the second mask hole width Wm2 is 41% or more, compared with other portions of the metal mask 10 for vapor deposition Then, the strength of each of the first mask portions 21 is such that the bending does not concentrate on the size of the first mask portion 21.

(3) Even if the size of the first pitch P1 is changed, that is, even if the size of the space included in the first pitch P1 is changed, the maximum value T1M of the thickness of the first mask portion 21 can be maintained at a predetermined size or more. Therefore, in the metal mask 10 for vapor deposition, it is possible to suppress the occurrence of bending in the first mask portion 21.

(4) In the configuration in which the thickness of the first mask portion 21 is 12.5 μm or more, the strength difference between the portion where the first mask portion 21 is connected and the portion other than the portion to which the first mask portion 21 is connected is the metal mask 10 for vapor deposition. It is suppressed to the extent that the bending of the portion where the first mask portion 21 is connected can be suppressed.

(5) Since the ratio of the maximum value T1M of the thickness of the first mask portion 21 to the minimum value Wmm1 of the first mask hole width Wm1 is 7% or more, compared with other portions of the metal mask 10 for vapor deposition Then, the strength of each of the first mask portions 21 is such that the bending does not become more concentrated on the size of the first mask portion 21.

(6) In the vapor deposition metal mask 10 in which a plurality of mask holes 11 are arranged in a staggered arrangement, it is possible to suppress the bending in the direction in which the mask holes 11 are arranged.

Further, the above embodiment can be implemented by appropriately changing as follows.

As shown in FIG. 15, in the vapor deposition metal mask 60, in a plan view facing the first surface 60a, the plurality of mask holes 61 are spaced apart in the first direction D1 and the second direction D2 by a certain distance. The positions of the plurality of mask holes 61 constituting the respective rows in the first direction D1 may be the same in all the columns. That is, the plurality of mask holes 61 may be arranged in a square lattice shape.

Even in such a configuration, the first width W1 of the first mask portion 62 may be smaller than the second width W2 of the second mask portion 63. In the cross section orthogonal to the first direction D1, the ratio of the minimum value T1m of the thickness of the first mask portion 62 to the maximum value T2M of the thickness of the second mask portion 63 is 70% or more, and The ratio of the maximum value T2M of the thickness of the mask portion 63 to the minimum value Wmm2 of the second mask hole width Wm2 of the first opening 11a may be 41% or more. According to such a metal mask 60 for vapor deposition, the same effects as the above (1) and (2) can be obtained.

In the cross section orthogonal to the second direction D2, the ratio of the maximum value T1M of the thickness of the first mask portion 21 to the minimum value Wmm1 of the first mask hole width Wm1 may be less than 7%. In the cross section orthogonal to the first direction D1, the ratio of the minimum value T1m of the first mask portion 21 to the maximum value T2M of the second mask portion 22 is 70% or more, and 2 The maximum value T2M of the thickness of the mask portion 22 is relative to The ratio of the minimum value Wmm2 of the second mask hole width Wm2 of the first opening 11a may be 41% or more. Thereby, the same effects as the above (1) and (2) can be obtained.

In the cross section orthogonal to the first direction D1, the ratio of the maximum value T2M of the thickness of the first mask portion 21 to the first pitch P1 in the cross section orthogonal to the second direction D2 may be less than 6%. In the cross section orthogonal to the first direction D1, the ratio of the minimum value T1m of the first mask portion 21 to the maximum value T2M of the second mask portion 22 is 70% or more, and The ratio of the maximum value T2M of the thickness of the mask portion 22 to the minimum value Wmm2 of the second mask hole width Wm2 of the first opening 11a may be 41% or more. Thereby, the same effects as the above (1) and (2) can be obtained.

In the cross section orthogonal to the first direction D1, the minimum value T1m of the thickness of the first mask portion 21 may be less than 12.5 μm. In the cross section orthogonal to the first direction D1, the ratio of the minimum value T1m of the first mask portion 21 to the maximum value T2M of the second mask portion 22 is 70% or more, and The ratio of the maximum value T2M of the thickness of the mask portion 22 to the minimum value Wmm2 of the second mask hole width Wm2 of the first opening 11a may be 41% or more. Thereby, the same effects as the above (1) and (2) can be obtained.

The step of forming the second hole portion 11d constituting the mask hole 11 is not limited to the step of simultaneously forming the first arc portion dp1 and the second arc portion dp2 connected by the inflection portion dp3 using the second resist pattern 35. It can also be composed of the following steps. For example, in the step of forming the second hole portion 11d, first, two pieces for forming a first arc portion dp1 are formed. After the resist pattern of the second arc-shaped portion dp2 is located on the metal mask substrate 31, the metal mask substrate 31 is etched using the resist pattern. Next, after the resist pattern used for etching is peeled off from the metal mask substrate 31, the resist pattern for forming the first arc portion dp1 is placed on the metal mask substrate 31, and the resist pattern is used. The substrate 31 for metal mask is etched. Thereby, the second hole portion 11d can be formed. In this manner, the second hole portion 11d can be formed by repeating the formation of the resist pattern and the etching of the metal mask substrate 31 twice.

The second hole portion 11d constituting the mask hole 11 can be formed by repeating the formation of the resist pattern and the etching of the metal mask substrate 31 three times or more. For example, each of the first arc-shaped portion dp1 and the two second arc-shaped portions dp2 constituting one second hole portion 11d can be formed using an individual resist pattern. In this case, the second hole portion 11d can be formed by repeating the formation of the resist pattern and the etching of the metal mask substrate 31 three times.

The thickness of the metal mask substrate 31 may be thinner than 20 μm, and may be, for example, 10 μm or more and less than 20 μm. When such a metal mask substrate 31 is used, the mask hole having a desired shape can be formed only by etching the metal mask substrate 31 from the second surface 31b. Further, the metal mask substrate 31 having a thickness of 10 μm or more and less than 20 μm is finer in the production of the metal mask 10 for vapor deposition which can be formed by the metal mask substrate 31 having a thickness of 20 μm or more. The vapor deposition metal mask 10 is a preferred substrate.

When the metal mask substrate 31 is used, the method for producing the metal mask 10 for vapor deposition described above can be omitted for the metal mask. The first resist 31 is formed on the first surface 31a of the substrate 31, and the first resist pattern 34 is formed from the first resist layer 32. Moreover, in this case, the metal mask base 31 may be omitted by using the first resist pattern 34, and the formation of the second protective layer 36 and the formation of the first protective layer 37 may be omitted.

As described above, in the case of using the metal mask substrate 31 having a thickness of 10 μm or more and less than 20 μm, the metal mask 10 for vapor deposition can be obtained by performing the following steps. In other words, by forming a resist layer on the second surface 31b of the metal mask substrate 31, forming a resist pattern from the resist layer, and etching the metal mask substrate with a resist pattern, it is possible to manufacture a vapor deposition layer. Metal mask 10. In the middle of the metal mask 10 for vapor deposition, the support member for supporting the metal mask substrate 31 may be adhered to the metal mask substrate 31.

In the metal mask 10 for vapor deposition obtained through such a step, in the cross section orthogonal to the first direction D1, the second mask hole width of the second opening is the largest, and the second mask of the first opening The hole width is the smallest. Further, the width of the second mask hole gradually decreases from the second opening toward the first opening. Therefore, the ratio of the maximum value T2M of the thickness of the second mask portion 22 to the width of the second mask hole of the first opening may be 41% or more.

The metal mask for vapor deposition is not limited to the metal mask for vapor deposition used for the production of an organic EL display, and may be a metal mask for vapor deposition used for production of another display device, or a wiring for various devices. It is used as a metal mask for vapor deposition for vapor deposition, such as a functional layer provided in various devices.

10‧‧‧Metal mask for evaporation

10a‧‧‧1st

11‧‧‧ mask hole

21‧‧‧1st mask

22‧‧‧2nd mask

P1‧‧‧1st pitch

P2‧‧‧2nd pitch

W1‧‧‧1st width

W2‧‧‧2nd width

Claims (4)

A metal mask for vapor deposition, comprising a vapor deposition metal mask along a first direction and a plurality of mask holes arranged in a second direction orthogonal to the first direction, the vapor deposition metal The mask includes a first surface and a second surface, and each of the mask holes has a first opening formed in the first surface and a second opening opened in the second surface, and the vapor deposition is performed on each of the mask holes The element that is covered with the metal is composed of two first mask portions that face each other in the first direction and two second mask portions that face each other in the second direction, and the first mask The cover portion and the mask hole are alternately repeated one by one along the first direction, and the second mask portion and the mask hole are alternately repeated one by one along the second direction, and the first mask portion is alternately The width of the first mask portion is smaller than the width of the second mask portion along the second direction, and the minimum value of the thickness of the first mask portion is relative to the cross section orthogonal to the first direction. The ratio of the maximum value of the thickness of the second mask portion is 70% or more, and in each of the mask holes, the foregoing The width of the mask hole in the cross section perpendicular to the one direction is the width of the mask hole, and the width of the mask hole of the first opening is smaller than the width of the mask hole of the second opening, and the width of the second mask portion The ratio of the maximum value of the thickness to the minimum value of the width of the mask hole between the first opening and the second opening is 41% or more. The metal mask for vapor deposition according to claim 1, wherein the plurality of mask holes are arranged at a constant pitch along the first direction, and a ratio of a maximum value to the pitch is 6% or more, and the maximum value is The maximum value of the thickness of the first mask portion in the cross section orthogonal to the second direction. The metal mask for vapor deposition according to claim 1, wherein in the mask hole, the width of the mask hole is a width of a mask hole along the second direction, that is, a width of the second mask hole, and The width of the mask hole in the cross section orthogonal to the two directions is along the width of the mask hole in the first direction, that is, the width of the first mask hole, and the width of the first mask hole of the first opening is smaller than the first The width of the first mask hole of the opening, the ratio of the maximum value of the thickness of the first mask portion to the minimum value of the width of the first mask hole between the first opening and the second opening is 7 %the above. The metal mask for vapor deposition according to any one of claims 1 to 3, wherein the plurality of the mask holes are arranged in a staggered arrangement when viewed in a direction orthogonal to a direction in which the metal mask for vapor deposition is expanded.