JPH03263835A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To form a conductor film in a desired shape without executing an etching process of the conductor film by a method wherein two layers of photoresist patterns having an opening part are formed on a semiconductor substrate and, after that, a part, on a second-layer photoresist, out of the conductor film deposited on the whole surface is removed simultaneously with the two layers of the photoresists. CONSTITUTION:A dielectric film 2 is deposited on a semiconductor substrate 1; then, a first-layer photoresist pattern 3 having an opening part partially is formed on the dielectric film 2; and the shape of the dielectric film 2 is processed by making use of the photoresist pattern 3 as a mask. Then, the cross-sectional shape of the opening part in said photoresist 3 is processed in a curve shape; a second-layer photoresist pattern 4 having an opening part partially is formed on the first-layer photoresist 3 whose shape has been processed. Then, a conductor film 5 is formed on the whole surface of said two layers of the photoresist patterns 3, 4; after that, a part, which has been deposited on the second-layer photoresist 4, out of the conductor film 5 is removed from the semiconductor substrate 1 together with said two layers of the photoresists 3, 4.

Description

[Detailed description of the invention] Industrial applications The present invention relates to a method for manufacturing a semiconductor device.

2. Description of the Related Art Conventionally, when forming a conductor having a curved portion on a semiconductor substrate, the steps shown in the step-by-step cross-sectional views of FIG. (As shown in al, first, a dielectric pattern 7 is formed to obtain the shape of the lower part of the conductor 8, and as shown in FIG. Next, as shown in FIG. 2 (tc+), a dielectric pattern 9 is formed to obtain the shape of the upper part of the conductor 8, and the conductor film is selectively deposited as shown in FIG. 2 (di). By removing the second
A semiconductor device having a conductor 8 having a curved shape portion as shown in FIG. 1 was being formed.

Problems to be Solved by the Invention However, in this manufacturing method, in order to obtain the shape of the upper part of the conductor, it is necessary to perform an etching process on the conductor film using the dielectric film as a mask. There were many restrictions on the types of films, how they were introduced, the thickness of each film, and the pattern dimensions of the upper dielectric.

Means for Solving the Problems In order to solve the above problems, in the manufacturing method of the present invention,
First, a dielectric film is deposited on a semiconductor substrate, and a first layer photoresist pattern having partially open holes is formed on this dielectric film. Next, the portion of the dielectric film exposed under the photoresist pattern opening is removed by etching, and the photoresist pattern is transferred to the underlying dielectric film. Next, the cross-sectional shape of the photoresist opening in the first layer is processed into a curved shape. Next, the photoresist pattern has an opening larger than the first layer photoresist opening, and the cross-sectional shape of the upper part of the opening has an overhanging shape. Completely include the first layer forcyst pores,
A second layer of photoresist pattern is formed. Next, a conductive film is deposited over the entire surface of the semiconductor substrate on which the dielectric film having the openings and the two layers of photoresist are formed. Next, the portion of this conductive film deposited on the second layer of photoresist is removed from above the dielectric film together with the two layers of photoresist.

Effect When the above manufacturing method is used, there is no need to selectively remove the conductor film by etching in order to finally form the desired conductor film shape on the semiconductor substrate. Occur. Type and thickness of conductor film,
Furthermore, there are no restrictions on the type and thickness of the dielectric film used as an etching mask pattern, and the type of conductive film can be freely selected.By changing the thickness of the second layer of photoresist, The film thickness can also be changed freely.

Embodiment FIGS. 1(a) to 1(hl) are cross-sectional views in the order of steps for explaining an embodiment of the present invention, in which a conductive film partially connected to the substrate is formed on a semiconductor substrate. First, as shown in FIG. 1(a), a dielectric thin film 2 is deposited on a semiconductor substrate 1.Next, as shown in FIG. The photoresist 3 is pattern-sized so as to have an opening.Next, as shown in FIG. 1(C), using the photoresist 3 as a mask, the dielectric film 2 exposed under the opening is Next, as shown in FIG. 1 fd), the cross-sectional shape of the opening of the photoresist 3 used as a mask is processed into a curved shape.

Next, as shown in FIG. A second layer of photoresist pattern 4 is formed so as to completely include the opening of photoresist 3. At this time, as shown in FIG. 1 (fe), the second layer of photoresist 4 is formed so that the cross-sectional shape of the opening is overhanging. Next, as shown in FIG. 1(fl), the photoresist 3.4 and the semiconductor substrate 1 exposed under the opening of the dielectric film 2 are slightly etched, and as shown in FIG. 1(g), the semiconductor substrate 1 is etched. , dielectric 2
Then, a conductor film 5 is deposited over the entire surface of the semiconductor substrate l on which the two layers of photoresist are formed. Next, the portion of this conductive film 5 deposited on the second layer photoresist 4 is replaced with a two-layer photoresist! By removing the . Form.

In this embodiment, the dielectric film is first formed on the semiconductor substrate, but this may be omitted and the first layer photoresist pattern may be directly formed.

In addition, in this example, the cross-sectional shape of the photoresist opening in the first layer was processed, but this processed shape is not limited to the shape of the example, and is ultimately formed on the semiconductor substrate. This may be carried out as appropriate depending on the shape required for the conductive film. In this example, the semiconductor substrate exposed under the opening was etched before depositing the conductor film, but the surface treatment of the semiconductor substrate is not limited to this.

Effects of the Invention As described above, the present invention first forms a two-layer photoresist pattern partially having openings on a semiconductor substrate, and then forms a conductor film deposited on the entire surface of the substrate. Second
By removing the second layer of photoresist from the substrate, the portion deposited on the second layer of photoresist is simultaneously removed from the substrate to form a conductive film in a desired shape that is partially connected to the semiconductor substrate. , it becomes possible to form a conductor film without performing an etching process, and this has a great practical effect.

[Brief explanation of drawings]

FIG. 1 is a step-by-step sectional view for explaining a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a step-by-step sectional view for explaining a conventional manufacturing method. 8... Conductor film, 9... Photoresist.

Claims (1)

[Claims] a step of depositing a dielectric film on a semiconductor substrate; a step of forming a first layer photoresist pattern having a partially open hole on the dielectric film; and a step of forming a first layer photoresist pattern on the dielectric film. a step of processing the dielectric film into a shape using a mask; a step of processing the cross-sectional shape of the photoresist opening in the first layer into a curved shape; forming a second layer photoresist pattern having openings partially on the resist; and forming a conductive film over the entire surface of the semiconductor substrate on which the two layer photoresist patterns are formed. of the conductive film deposited on the entire surface;
The portion deposited on the first layer of photoresist is
Along with two layers of photoresist, the first layer and the second layer,
A method for manufacturing a semiconductor device, comprising the step of removing the semiconductor substrate from above.