CN206312887U - 带有封闭空腔的芯片嵌入式封装结构 - Google Patents
带有封闭空腔的芯片嵌入式封装结构 Download PDFInfo
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- CN206312887U CN206312887U CN201621328888.2U CN201621328888U CN206312887U CN 206312887 U CN206312887 U CN 206312887U CN 201621328888 U CN201621328888 U CN 201621328888U CN 206312887 U CN206312887 U CN 206312887U
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- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000005022 packaging material Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 20
- 239000010410 layer Substances 0.000 description 99
- 238000000034 method Methods 0.000 description 45
- 238000010586 diagram Methods 0.000 description 16
- 230000006872 improvement Effects 0.000 description 13
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- 239000002313 adhesive film Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
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- 238000004519 manufacturing process Methods 0.000 description 5
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
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- 239000011248 coating agent Substances 0.000 description 3
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
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- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201621328888.2U CN206312887U (zh) | 2016-12-06 | 2016-12-06 | 带有封闭空腔的芯片嵌入式封装结构 |
Applications Claiming Priority (1)
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CN201621328888.2U CN206312887U (zh) | 2016-12-06 | 2016-12-06 | 带有封闭空腔的芯片嵌入式封装结构 |
Publications (1)
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CN206312887U true CN206312887U (zh) | 2017-07-07 |
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CN201621328888.2U Active CN206312887U (zh) | 2016-12-06 | 2016-12-06 | 带有封闭空腔的芯片嵌入式封装结构 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449554A (zh) * | 2016-12-06 | 2017-02-22 | 苏州源戍微电子科技有限公司 | 带有封闭空腔的芯片嵌入式封装结构及其制作方法 |
CN109979890A (zh) * | 2017-12-28 | 2019-07-05 | 凤凰先驱股份有限公司 | 电子封装件及其制法 |
WO2019153102A1 (zh) * | 2018-02-07 | 2019-08-15 | 璩泽明 | 垂直式晶片与水平式晶片的嵌入型封装结构及其制造方法 |
WO2020237499A1 (zh) * | 2019-05-28 | 2020-12-03 | 开元通信技术(厦门)有限公司 | 一种芯片封装结构及封装方法 |
-
2016
- 2016-12-06 CN CN201621328888.2U patent/CN206312887U/zh active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449554A (zh) * | 2016-12-06 | 2017-02-22 | 苏州源戍微电子科技有限公司 | 带有封闭空腔的芯片嵌入式封装结构及其制作方法 |
CN106449554B (zh) * | 2016-12-06 | 2019-12-17 | 苏州源戍微电子科技有限公司 | 带有封闭空腔的芯片嵌入式封装结构及其制作方法 |
CN109979890A (zh) * | 2017-12-28 | 2019-07-05 | 凤凰先驱股份有限公司 | 电子封装件及其制法 |
WO2019153102A1 (zh) * | 2018-02-07 | 2019-08-15 | 璩泽明 | 垂直式晶片与水平式晶片的嵌入型封装结构及其制造方法 |
WO2020237499A1 (zh) * | 2019-05-28 | 2020-12-03 | 开元通信技术(厦门)有限公司 | 一种芯片封装结构及封装方法 |
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Legal Events
Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200622 Address after: 313200 No. 926 Changhong East Street, Fuxi Street, Deqing County, Huzhou City, Zhejiang Province (Mogan Mountain National High-tech Zone) Patentee after: Zhejiang Rongcheng Semiconductor Co., Ltd Address before: 215000, Suzhou Industrial Park, Jinji Lake Road, 99, Suzhou City, northwest of the city of Jiangsu, 5, 3 Patentee before: SUZHOU YUANSHU MICROELECTRONICS TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201020 Address after: 215000, Suzhou Industrial Park, Jinji Lake Road, 99, Suzhou City, northwest of the city of Jiangsu, 5, 3 Patentee after: SUZHOU YUANSHU MICROELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 313200 No. 926 Changhong East Street, Fuxi Street, Deqing County, Huzhou City, Zhejiang Province (Mogan Mountain National High-tech Zone) Patentee before: Zhejiang Rongcheng Semiconductor Co., Ltd |