CN206282860U - 一种阵列基板及显示面板 - Google Patents

一种阵列基板及显示面板 Download PDF

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CN206282860U
CN206282860U CN201621260766.4U CN201621260766U CN206282860U CN 206282860 U CN206282860 U CN 206282860U CN 201621260766 U CN201621260766 U CN 201621260766U CN 206282860 U CN206282860 U CN 206282860U
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semi
protective layer
array base
base palte
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袁粲
李永谦
徐攀
焦超
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to PCT/CN2017/092215 priority patent/WO2018086365A1/zh
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Abstract

本实用新型提供一种阵列基板及显示面板，所述阵列基板包括基底，在基底上依次形成有第一电极、第一保护层、半导体电极、第二保护层和第二电极，第二电极与半导体电极形成存储电容，第一电极位于半导体电极下方用于使半导体电极导体化。在垂直于基底的方向上，使第一保护层上第一电极区域的厚度小于非第一电极区域的厚度，即第一电极与半导体电极之间第一保护层的厚度小于其它区域第一保护层的厚度，从而增强第一电极的电场对半导体电极的影响，使半导体电极导体化效果更好，进而在不影响驱动管的开关特性的前提下，提高存储电容存储并保持电压的能力，解决显示面板显示暗点的不良。

Description

一种阵列基板及显示面板
技术领域
本实用新型涉及显示技术领域，特别涉及一种阵列基板及显示面板。
背景技术
在液晶显示面板和有机发光二级管显示面板中，电容在阵列基板的阵列电路中都有合理的设计利用，其中最主要的是起到将显示过程中对应的源极电压保持到下次更新画面作用的存储电容。有机发光二级管显示面板的阵列基板的结构，如图1所示，半导体电极4与第二电极6形成存储电容。在显示过程中，当第一驱动管10被选中开启时，存储电容进行充电，同时，第二电极6的电压用于控制第二驱动管11的开启，从而控制第四电极9的电流；当第一驱动管10截止时，存储电容用于维持第二电极6的当前电压，使第二驱动管11保持一直导通状态，从而第四电极9的电流处于恒流控制。可见，存储电容的特性的表现尤为重要，直接影响显示面板的正常显示。为了增强存储电容的特性，在半导体电极4的下方设置第一电极2，第一电极2用于使半导体电极4导体化，从而提高存储电容存储并保持电压的能力。
但是，第一电极2与半导体电极4之间存在第一保护层3，为了保证第一驱动管10与第二驱动管11的开关特性，第一保护层3的厚度较厚，从而第一电极2使半导体电极4导体化的效果较差，使存储电容存储并保持电压的能力较差，进而影响显示面板的显示，产生暗点不良。
发明内容
本实用新型针对现有技术中存在的上述不足，提供一种阵列基板及显示面板，用以至少部分解决存储电容存储并保持电压的能力较差，导致显示面板产生暗点不良的问题。
为实现上述目的，本实用新型提供一种阵列基板，包括基底，形成在所述基底上的第一电极，形成在所述基底和第一电极上的第一保护层，形成在所述第一保护层上且与所述第一电极的位置相对应的半导体电极，形成在所述第一保护层和半导体电极上的第二保护层，形成在所述第二保护层上且至少部分覆盖所述半导体电极的第二电极，在垂直于所述基底的方向上，所述第一保护层上第一电极区域的厚度小于非第一电极区域的厚度，所述第一电极区域为所述第一电极对应的区域。
优选的，所述第一电极区域形成有凹陷部，所述半导体电极至少部分容置在所述凹陷部内。
优选的，所述凹陷部的宽度大于或等于所述半导体电极的宽度。
优选的，所述阵列基板还包括形成在所述第二保护层上的第三电极，所述第三电极与所述半导体电极连接。
优选的，所述阵列基板还包括，形成在所述第二保护层和第二电极上的第三保护层，以及形成在所述第三保护层上且至少部分覆盖所述第二电极的第四电极，所述第四电极与所述第三电极连接。
优选的，所述阵列基板为有机发光二级管基板。
优选的，所述第一电极为栅极，所述第二电极与第三电极为源极，所述第四电极为阳极。
优选的，所述半导体电极包括金属氧化物、非晶硅或多晶硅。
还提供一种显示面板，包括如上所述的阵列基板。
本实用新型具有以下有益效果：
本实用新型提供一种阵列基板及显示面板，所述阵列基板包括基底，在基底上依次形成有第一电极、第一保护层、半导体电极、第二保护层和第二电极，第二电极与半导体电极形成存储电容，第一电极位于半导体电极下方用于使半导体电极导体化。在垂直于基底的方向上，第一保护层上第一电极区域的厚度小于非第一电极区域的厚度，即第一电极与半导体电极之间第一保护层的厚度小于其它区域第一保护层的厚度，从而增强第一电极的电场对半导体电极的影响，使半导体电极导体化效果更好，进而在不影响驱动管的开关特性的前提下，提高存储电容存储并保持电压的能力，解决显示面板显示暗点的不良。
附图说明
图1为现有技术提供的阵列基板的截面结构示意图；
图2为本实施例提供的阵列基板的截面结构示意图一；
图3为本实施例提供的阵列基板的截面结构示意图二。
图例说明：
1、基底 2、第一电极 3、第一保护层 4、半导体电极5、第二保护层 6、第二电极 7、第三电极 8、第三保护层9、第四电极 10、第一驱动管 11、第二驱动管 12、第一电极区域13、凹陷部
具体实施方式
为使本领域的技术人员更好地理解本实用新型的技术方案，下面结合附图对本实用新型提供的一种阵列基板进行详细描述。
发明人发现，在有机发光二级管显示面板的阵列基板中，用于使半导体电极导体化的第一电极的电压与存储电容的电容量存在一定的关系，如图1所示，在第一电极2的电压从4V递增至40V的过程中，第一驱动管10的源极(即第二电极6)的扫描电压与存储电容电容量的关系曲线为，第一电极2的电压越大，存储电容的电容量随着第二电极6从低到高的扫描电压起来得越早，也就是说，第一电极2的电压越大，存储电容可以在第二电极6越低的电压起来。因此，第一电极2的电压越大，第一电极2的电场强度越大，存储电容的存储能力越强。
本实用新型通过减小半导体电极与第一电极之间的距离，增强第一电极的电场强度对存储电容的存储能力的影响。
本实用新型实施例提供一种阵列基板，如图2所示，包括：基底1，形成在基底1上的第一电极2，形成在基底1和第一电极2上的第一保护层3，形成在第一保护层3上且与第一电极2的位置相对应的半导体电极4，形成在第一保护层3和半导体电极4上的第二保护层5，形成在第二保护层5上且至少部分覆盖半导体电极4的第二电极6。在垂直于基底1的方向上，第一保护层3上第一电极区域12的厚度小于非第一电极区域12的厚度，第一电极区域12为第一电极2对应的区域。
本实用新型的阵列基板，第二电极2与半导体电极4形成存储电容，第一电极2位于半导体电极4下方用于使半导体电极4导体化。在垂直于基底的方向上，第一保护层3上第一电极区域12的厚度小于非第一电极区域12的厚度，即第一电极2与半导体电极4之间第一保护层3的厚度小于其它区域第一保护层3的厚度，从而增强第一电极2的电场对半导体电极4的影响，使半导体电极4导体化效果更好，进而在不影响驱动管的开关特性的前提下，提高存储电容存储并保持电压的能力，解决显示面板显示暗点的不良。
优选的，半导体电极4可以采用金属氧化物、非晶硅或多晶硅材料制成。具体的，金属氧化物包括IGZO(Indium Gallium Zinc Oxide,铟镓锌氧化物)半导体材料。
以下，结合图2与图3对本实施例的具体优选实现方式进行详细说明。如图2所示，第一电极区域12形成有凹陷部13，半导体电极4至少部分容置在凹陷部13内。具体的，首先，在基底1上形成第一电极2，以及在基底1与第一电极2上形成第一保护层3；然后，在第一电极2对应的第一保护层3的上表面，通过掩膜工艺形成凹陷部13的图形，再通过刻蚀工艺去除凹陷部13的图形内的部分第一保护层3，从而在第一保护层3的上表面形成凹陷部13，也就是说，只有在第一保护层3的第一电极区域12，通过去除部分第一保护层3的厚度形成凹陷部13，其它区域的第一保护层3的厚度不变；最后，在第一保护层3与凹陷部13上形成半导体电极4，半导体电极4部分容置于凹陷部13内，即半导体电极4的部分下表面与凹陷部13的下表面接触，通过设置凹陷部13，减少了第一电极2的上表面与部分半导体电极4的下表面之间的距离，进而增强第一电极2的电场对部分半导体电极4的影响，提高半导体电极4的导体化效果。
优选的，如图3所示，凹陷部13的宽度大于或等于半导体电极4的宽度。具体的，全部半导体电极4的下表面与凹陷部13的下表面接触，从而减少全部半导体电极4的下表面与第一电极2的上表面之间的距离，增强第一电极2的电场对全部半导体电极4的影响，进一步提高半导体电极4的导体化效果。
需要说明的是，凹陷部13的深度越大，即第一电极2的上表面与半导体电极4的下表面之间的距离越小，第一电极2对半导体电极4的影响越强，半导体电极4导体化的效果越好。但是，第一电极2的上表面与半导体电极4的下表面之间的距离越小，半导体电极4与第二电极6之间的距离越大，会影响半导体电极4与第二电极6形成的存储电容的电容量。所以，在设计阵列基板时，要同时考虑存储电容的电容量与半导体电极4的导体化效果，因此，凹陷部13的深度要依据实际情况而定。
如图2和图3所示，进一步的，阵列基板还包括：形成在第二保护层5上的第三电极7，第三电极7与半导体电极4连接。具体的，第二电极6与第一驱动管10连接，半导体电极4通过第三电极7与第二驱动管11连接，使第二电极6与半导体电极4形成的存储电容连接到阵列基板的电路中，进一步提高存储电容保持第二电极6电压的能力。
进一步的，阵列基板还包括：形成在第二保护层5和第二电极上6的第三保护层8，以及形成在第三保护层8上且至少部分覆盖第二电极6的第四电极9，第四电极9与第三电极7连接。具体的，由于第四电极9部分覆盖第二电极6，所以存储电容包括第二电极6与半导体电极4之间的电容和第四电极9与第二电极6之间的电容，而且，第四电极9通过第三电极7与半导体电极4连接，使第二电极6与半导体电极4形成的电容和第四电极9与第二电极6形成的电容并联，从而存储电容的电容量为第二电极6与半导体电极4形成的电容的电容量与第四电极9与第二电极6形成的电容的电容量之和，进而可以进一步提高存储电容保持第二电极6电压的能力。
优选的，第一电极2为栅极，第四电极9为阳极，第二电极6为第一驱动管10的源极，第三电极7为第二驱动管11的源极。
本实用新型还提供一种显示面板，包括上述阵列基板。显示面板可以为有机发光二极管显示面板、电子纸、手机、平板电脑、电视机、数码相框等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (9)

1.一种阵列基板，包括基底，形成在所述基底上的第一电极，形成在所述基底和第一电极上的第一保护层，形成在所述第一保护层上且与所述第一电极的位置相对应的半导体电极，形成在所述第一保护层和半导体电极上的第二保护层，形成在所述第二保护层上且至少部分覆盖所述半导体电极的第二电极，
其特征在于，在垂直于所述基底的方向上，所述第一保护层上第一电极区域的厚度小于非第一电极区域的厚度，所述第一电极区域为所述第一电极对应的区域。
2.根据权利要求1所述的阵列基板，其特征在于，所述第一电极区域形成有凹陷部，所述半导体电极至少部分容置在所述凹陷部内。
3.根据权利要求2所述的阵列基板，其特征在于，所述凹陷部的宽度大于或等于所述半导体电极的宽度。
4.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括形成在所述第二保护层上的第三电极，所述第三电极与所述半导体电极连接。
5.根据权利要求4所述的阵列基板，其特征在于，所述阵列基板还包括，形成在所述第二保护层和第二电极上的第三保护层，以及形成在所述第三保护层上且至少部分覆盖所述第二电极的第四电极，所述第四电极与所述第三电极连接。
6.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板为有机发光二级管基板。
7.根据权利要求5所述的阵列基板，其特征在于，所述第一电极为栅极，所述第二电极与第三电极为源极，所述第四电极为阳极。
8.根据权利要求1所述的阵列基板，其特征在于，所述半导体电极包括金属氧化物、非晶硅或多晶硅。
9.一种显示面板，其特征在于，包括如权利要求1-8任一项所述的阵列基板。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018086365A1 (zh) * 2016-11-11 2018-05-17 京东方科技集团股份有限公司 一种阵列基板及其制造方法
WO2018224927A1 (en) * 2017-06-07 2018-12-13 International Business Machines Corporation Memristive structue

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103022080B (zh) * 2012-12-12 2015-09-16 京东方科技集团股份有限公司 阵列基板及其制作方法、有机发光二极管显示装置
TWI495111B (zh) * 2013-03-22 2015-08-01 Au Optronics Corp 顯示面板及其製作方法
US9673267B2 (en) * 2013-03-26 2017-06-06 Lg Display Co., Ltd. Organic light emitting diode display device having a capacitor with stacked storage electrodes and method for manufacturing the same
KR102124025B1 (ko) * 2013-12-23 2020-06-17 엘지디스플레이 주식회사 유기발광다이오드 표시장치 및 그 제조방법
KR102292514B1 (ko) * 2014-11-19 2021-08-23 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN105914229B (zh) * 2016-06-24 2017-12-15 京东方科技集团股份有限公司 一种amoled显示基板及其制作方法、显示装置
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WO2018086365A1 (zh) * 2016-11-11 2018-05-17 京东方科技集团股份有限公司 一种阵列基板及其制造方法
WO2018224927A1 (en) * 2017-06-07 2018-12-13 International Business Machines Corporation Memristive structue
US10186657B2 (en) 2017-06-07 2019-01-22 International Business Machines Corporation Three-terminal metastable symmetric zero-volt battery memristive device
US10340447B2 (en) 2017-06-07 2019-07-02 International Business Machines Corporation Three-terminal metastable symmetric zero-volt battery memristive device
GB2577831A (en) * 2017-06-07 2020-04-08 Ibm Memristive structure
US10651379B2 (en) 2017-06-07 2020-05-12 International Business Machines Corporation Three-terminal metastable symmetric zero-volt battery memristive device
GB2577831B (en) * 2017-06-07 2021-10-13 Ibm Memristive structure

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