CN113903797B - 主动元件及其制造方法 - Google Patents

主动元件及其制造方法 Download PDF

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CN113903797B
CN113903797B CN202111150973.XA CN202111150973A CN113903797B CN 113903797 B CN113903797 B CN 113903797B CN 202111150973 A CN202111150973 A CN 202111150973A CN 113903797 B CN113903797 B CN 113903797B
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CN113903797A (zh
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范扬顺
黄震铄
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AU Optronics Corp
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Abstract

一种主动元件及其制造方法。主动元件包括基板、切换底栅极、驱动底栅极、第一栅绝缘层、切换通道、驱动通道、第二栅绝缘层、切换顶栅极与驱动顶栅极。切换底栅极与驱动底栅极配置于基板上。第一栅绝缘层配置于基板上且覆盖切换底栅极与驱动底栅极。切换通道与驱动通道配置于第一栅绝缘层上。驱动通道具有一低电位端。低电位端电性连接驱动底栅极。第二栅绝缘层配置于第一栅绝缘层上且覆盖切换通道与驱动通道。第二栅绝缘层的厚度大于第一栅绝缘层的厚度。切换顶栅极与驱动顶栅极配置于第二栅绝缘层上。切换顶栅极电性连接切换底栅极。

Description

主动元件及其制造方法
技术领域
本发明涉及一种元件及其制造方法，且特别涉及一种主动元件及其制造方法。
背景技术
发光元件阵列显示装置是由设置于基板上的阵列排列的多个发光元件构成。继承目前的发光元件的特性，发光元件阵列显示装置具有省电、高效率、高亮度及反应时间快等优点。为了驱动发光元件，目前常采用低温多晶硅(Low Temperature Poly-Silicon,LTPS)薄膜晶体管作为驱动元件，并搭配氧化铟镓锌(Indium Gallium Zinc Oxide,IGZO)薄膜晶体管作为切换元件。然而，若所使用的低温多晶硅薄膜晶体管的次临界摆幅(subthresholdswing)较低，则在显示的亮度值较低时容易因为电流的变化而使亮度变化，降低显示品质。此外，若所使用的氧化铟镓锌薄膜晶体管的次临界摆幅较高，则切换速度较慢，会有画面迟滞的现象。
发明内容
本发明提供一种主动元件及其制造方法，可改善显示品质不佳的现象。
本发明的主动元件包括一基板、一切换底栅极、一驱动底栅极、一第一栅绝缘层、一切换通道、一驱动通道、一第二栅绝缘层、一切换顶栅极与一驱动顶栅极。切换底栅极与驱动底栅极配置于基板上。第一栅绝缘层配置于基板上且覆盖切换底栅极与驱动底栅极。切换通道与驱动通道配置于第一栅绝缘层上。驱动通道具有一低电位端。低电位端电性连接驱动底栅极。第二栅绝缘层配置于第一栅绝缘层上且覆盖切换通道与驱动通道。第二栅绝缘层的厚度大于第一栅绝缘层的厚度。切换顶栅极与驱动顶栅极配置于第二栅绝缘层上。切换顶栅极电性连接切换底栅极。
在本发明的一实施例中，第二栅绝缘层的厚度大于等于第一栅绝缘层的厚度的4倍。
在本发明的一实施例中，第二栅绝缘层的厚度等于第一栅绝缘层的厚度的5倍。
在本发明的一实施例中，切换通道的材质是氧化铟镓锌(Indium-Gallium-ZincOxide,IGZO)。
在本发明的一实施例中，驱动通道的材质是低温多晶硅。
在本发明的一实施例中，第一栅绝缘层在切换底栅极与切换通道之间的部分的厚度等于第一栅绝缘层在驱动底栅极与驱动通道之间的部分的厚度。
在本发明的一实施例中，第二栅绝缘层在切换底栅极与切换通道之间的部分的厚度等于第二栅绝缘层在驱动底栅极与驱动通道之间的部分的厚度。
在本发明的一实施例中，切换通道的一部分掺杂有氢离子。
在本发明的一实施例中，驱动通道的一部分掺杂有磷离子或砷离子。
在本发明的一实施例中，主动元件还包括一保护层，配置于第二栅绝缘层上且覆盖切换顶栅极与驱动顶栅极。
本发明的主动元件的制造方法包括下列步骤。在一基板上形成一切换底栅极与一驱动底栅极。在基板上形成一第一栅绝缘层。第一栅绝缘层覆盖切换底栅极与驱动底栅极。在第一栅绝缘层上形成一切换通道与一驱动通道。在第一栅绝缘层上形成一第二栅绝缘层。第二栅绝缘层覆盖切换通道与驱动通道。第二栅绝缘层的厚度大于第一栅绝缘层的厚度。在第二栅绝缘层上形成一切换顶栅极与一驱动顶栅极，并使切换顶栅极电性连接切换底栅极，使驱动通道的一低电位端电性连接驱动底栅极。
在本发明的一实施例中，第二栅绝缘层的厚度被形成为大于等于第一栅绝缘层的厚度的4倍。
在本发明的一实施例中，第二栅绝缘层的厚度被形成为等于第一栅绝缘层的厚度的5倍。
在本发明的一实施例中，切换通道的材质是氧化铟镓锌。
在本发明的一实施例中，驱动通道的材质是低温多晶硅。
在本发明的一实施例中，第一栅绝缘层在切换底栅极与切换通道之间的部分的厚度被形成为等于第一栅绝缘层在驱动底栅极与驱动通道之间的部分的厚度。
在本发明的一实施例中，第二栅绝缘层在切换底栅极与切换通道之间的部分的厚度被形成为等于第二栅绝缘层在驱动底栅极与驱动通道之间的部分的厚度。
在本发明的一实施例中，主动元件的制造方法还包括在形成切换顶栅极与驱动顶栅极之后进行掺杂工艺，以在切换通道的一部分掺杂氢离子。
在本发明的一实施例中，主动元件的制造方法还包括在形成切换顶栅极与驱动顶栅极之后进行掺杂工艺，以在驱动通道的一部分掺杂磷离子或砷离子。
在本发明的一实施例中，主动元件的制造方法还包括在形成切换顶栅极与驱动顶栅极之后在第二栅绝缘层上形成一保护层，其中保护层覆盖切换顶栅极与驱动顶栅极。
基于上述，在本发明的主动元件及其制造方法中，不仅可维持较高的驱动元件的次临界摆幅，也可降低切换元件的次临界摆幅，进而改善显示品质。
附图说明
图1至图4是本发明一实施例的主动元件的制造方法剖面流程图。
图5是图4的主动元件的等效电路图。
附图标记说明：
50：发光元件
100：主动元件
110：基板
120：第一栅绝缘层
130：第二栅绝缘层
140：保护层
G12：切换底栅极
G22：驱动底栅极
C10：切换通道
C20：驱动通道
T12,T14：厚度
G14：切换顶栅极
G24：驱动顶栅极
B10,B20,G12A,G22A：连接件
T10：切换元件
T20：驱动元件
DL：数据线
CP：电容
GL：扫描线
VDD：电源
VSS：共用电路
具体实施方式
图1至图4是本发明一实施例的主动元件的制造方法剖面流程图。请参照图1，本实施例的主动元件的制造方法是先在一基板110上形成一切换底栅极G12与一驱动底栅极G22。形成切换底栅极G12与驱动底栅极G22时，例如是先全面形成一导体层，再将导体层图案化以形成切换底栅极G12与驱动底栅极G22。接着，在基板110上形成一第一栅绝缘层120。第一栅绝缘层120覆盖切换底栅极G12与驱动底栅极G22。第一栅绝缘层120的材质例如为氧化硅、氮化硅或氮氧化硅等介电材料。
然后，在第一栅绝缘层120上形成一切换通道C10与一驱动通道C20。在本实施例中，切换通道C10的材质是氧化铟镓锌，而驱动通道C20的材质是低温多晶硅，但本发明不以此为限。例如，切换通道C10的材质也可以是氧化锌(ZnO)、氧化锡(SnO)、氧化铟锌(Indium-Zinc Oxide,IZO)、氧化镓锌(Gallium-Zinc Oxide,GZO)、氧化锌锡(Zinc-Tin Oxide,ZTO)、氧化铟锡(Indium-Tin Oxide,ITO)或其他适合的金属氧化物半导体材料。当切换通道C10与驱动通道C20的材质不同时，两者可以先后分别形成。
接着请参照图2，在第一栅绝缘层120上形成一第二栅绝缘层130。第二栅绝缘层130覆盖切换通道C10与驱动通道C20。第二栅绝缘层130的厚度T14大于第一栅绝缘层120的厚度T12。在此，是以第二栅绝缘层130在切换底栅极G12与切换通道C10之间的部分的厚度T14与第一栅绝缘层120在切换底栅极G12与切换通道C10之间的部分的厚度T12相比。在本实施例中，第一栅绝缘层120在不同位置的厚度大致相同，第二栅绝缘层130在不同位置的厚度也大致相同，仅存在工艺因素产生的厚度误差，但本发明不以此为限。此外，图示中的厚度仅为示意，并非表示真实厚度。
然后，在第二栅绝缘层130上形成一切换顶栅极G14与一驱动顶栅极G24。形成切换顶栅极G14与驱动顶栅极G24时，例如是先全面形成一导体层，再将导体层图案化以形成切换顶栅极G14与驱动顶栅极G24。
接着，可进行掺杂工艺，以使切换通道C10的一部分以及驱动通道C20的一部分适于连接电极。举例来说，可在驱动通道C20的一部分掺杂磷离子或砷离子，并在切换通道C10的一部分掺杂氢离子，但本发明不以此为限。
在一实施例中，可全面地进行掺杂工艺，以使切换通道C10没有位于切换顶栅极G14下方的部分掺杂磷离子，并使驱动通道C20没有位于驱动顶栅极G24下方的部分掺杂磷离子。然后，加热以完成掺杂。接着，全面地利用氢气等离子体进行另一掺杂工艺，以使切换通道C10没有位于切换顶栅极G14下方的部分掺杂氢离子，并使驱动通道C20没有位于驱动顶栅极G24下方的部分掺杂氢离子。
在另一实施例中，可先形成遮蔽切换通道C10的掩模层，然后全面地进行掺杂工艺。此时，切换通道C10受到掩模层的遮蔽而不会被掺杂磷离子，而驱动通道C20没有位于驱动顶栅极G24下方的部分则会掺杂磷离子。然后，加热以完成掺杂。接着，移除前述的掩模层，全面地利用氢气等离子体进行另一掺杂工艺，以使切换通道C10没有位于切换顶栅极G14下方的部分掺杂氢离子，并使驱动通道C20没有位于驱动顶栅极G24下方的部分掺杂氢离子，以修复驱动通道C20的硅断键。
在又一实施例中，可全面地进行掺杂工艺，以使切换通道C10没有位于切换顶栅极G14下方的部分掺杂磷离子，并使驱动通道C20没有位于驱动顶栅极G24下方的部分掺杂磷离子。然后，加热以完成掺杂。接着，形成遮蔽切换通道C10的掩模层，再全面地利用氢气等离子体进行另一掺杂工艺。此时，切换通道C10受到掩模层的遮蔽而不会被掺杂氢离子，而驱动通道C20没有位于驱动顶栅极G24下方的部分则掺杂氢离子。
在更一实施例中，可全面地以磷离子进行掺杂工艺。然后，形成氢化氮化硅(SiNx：H)层，配置于第二栅绝缘层130上且覆盖切换顶栅极G14与驱动顶栅极G24。接着，加热以完成掺杂。如此，可使切换通道C10没有位于切换顶栅极G14下方的部分掺杂磷离子与氢离子，并使驱动通道C20没有位于驱动顶栅极G24下方的部分掺杂磷离子与氢离子。
接着请参照图3，选择性地在第二栅绝缘层130上形成一保护层140，其中保护层140覆盖切换顶栅极G14与驱动顶栅极G24。保护层140例如是有机平坦层，其材料例如为聚酯类(PET)、聚烯类、聚丙酰类、聚碳酸酯类、聚环氧烷类、聚苯烯类、聚醚类、聚酮类、聚醇类、聚醛类或其它合适的材料等，但不以此为限。保护层140的材料也可以是氢化氮化硅、氧化硅。
接着请参照图4，使切换顶栅极G14电性连接切换底栅极G12，使驱动通道C20的一低电位端C22电性连接驱动底栅极G22。在本实施例中，形成了贯穿保护层140且部分位于保护层140的连接件B10与连接件B20。连接件B20还贯穿第二栅绝缘层130。此外，在图2的步骤中，还在形成切换顶栅极G14与驱动顶栅极G24时，也形成连接件G12A与连接件G22A。因此，切换顶栅极G14可通过连接件B10与连接件G12A而电性连接切换底栅极G12，驱动通道C20的低电位端C22可通过连接件B20与连接件G22A电性连接驱动底栅极G22。在此，虽然举例说明使切换顶栅极G14电性连接切换底栅极G12以及使驱动通道C20的低电位端C22电性连接驱动底栅极G22的方式，但本发明不以此为限。
请再参照图4，本实施例的主动元件100包括基板110、切换底栅极G12、驱动底栅极G22、第一栅绝缘层120、切换通道C10、驱动通道C20、第二栅绝缘层130、切换顶栅极G14与驱动顶栅极G24。切换底栅极G12与驱动底栅极G22配置于基板110上。第一栅绝缘层120配置于基板110上且覆盖切换底栅极G12与驱动底栅极G22。切换通道C10与驱动通道C20配置于第一栅绝缘层120上。驱动通道C20具有低电位端C22。低电位端C22电性连接驱动底栅极G22。第二栅绝缘层130配置于第一栅绝缘层120上且覆盖切换通道C10与驱动通道C20。第二栅绝缘层130的厚度大于第一栅绝缘层120的厚度。切换顶栅极G14与驱动顶栅极G24配置于第二栅绝缘层130上。切换顶栅极G14电性连接切换底栅极G12。
图5是图4的主动元件的等效电路图。请参照图4与图5，切换底栅极G12、切换通道C10与切换顶栅极G14是切换元件T10的一部分，而驱动底栅极G22、驱动通道C20与驱动顶栅极G24是驱动元件T20的一部分。切换通道C10的高电位端电性连接数据线DL。切换通道C10的低电位端电性连接驱动顶栅极G24，且切换通道C10的低电位端通过电容CP电性连接一发光元件50。切换底栅极G12与切换顶栅极G14电性连接扫描线GL。驱动通道C20的高电位端电性连接电源VDD。驱动通道C20的低电位端C22电性连接驱动底栅极G22与发光元件50。发光元件50的另一端电性连接共用电路VSS。
根据上述，驱动元件T20具有驱动底栅极G22与驱动顶栅极G24，而此架构的驱动元件T20的次临界摆幅在第一栅绝缘层120的厚度与第二栅绝缘层130厚度变动时不会有明显地改变。因此，可让驱动元件T20的次临界摆幅维持在较高的状态，进而提升发光元件50在低亮度时的稳定性。此外，因为第二栅绝缘层130的厚度T14大于第一栅绝缘层120的厚度T12，所以切换元件T10的次临界摆幅可以维持在较低的状态，进而提升切换发光元件50的启闭的速度。
在本实施例中，第一栅绝缘层120在切换底栅极G12与切换通道C10之间的部分的厚度T12等于第一栅绝缘层120在驱动底栅极G22与驱动通道C20之间的部分的厚度T22。此外，在本实施例中，第二栅绝缘层130在切换底栅极G12与切换通道C10之间的部分的厚度T14等于第二栅绝缘层130在驱动底栅极G22与驱动通道C20之间的部分的厚度T24。由于本实施例的第一栅绝缘层120在上述不同位置的厚度大致相同，且第二栅绝缘层130在上述不同位置的厚度也大致相同，因此工艺相对简单且成本较低。
在本实施例中，主动元件100还包括一保护层140，配置于第二栅绝缘层130上且覆盖切换顶栅极G14与驱动顶栅极G24。
在本实施例中，第二栅绝缘层130的厚度T14被形成为大于等于第一栅绝缘层120的厚度T12的4倍。例如，第二栅绝缘层130的厚度T14被形成为等于第一栅绝缘层120的厚度T12的5倍。如此，驱动元件T20的驱动顶栅极G24的次临界摆幅会明显上升，而切换元件T10的切换底栅极G12的次临界摆幅则不受影响。
综上所述，在本发明的主动元件及其制造方法中，双栅极的设计使得切换元件的栅绝缘层的厚度变化对于切换元件的次临界摆幅的影响降低，且双栅极的设计使得驱动元件的栅绝缘层的厚度变化可调整驱动元件的次临界摆幅。因此，可在维持较低的切换元件的次临界摆幅的前提下，提升驱动元件的次临界摆幅，进而改善显示品质。

Claims (20)

1.一种主动元件，包括：
一基板；
一切换底栅极与一驱动底栅极，配置于该基板上；
一第一栅绝缘层，配置于该基板上且覆盖该切换底栅极与该驱动底栅极；
一切换通道与一驱动通道，配置于该第一栅绝缘层上，其中该驱动通道具有一低电位端，该低电位端电性连接该驱动底栅极；
一第二栅绝缘层，配置于该第一栅绝缘层上且覆盖该切换通道与该驱动通道，其中该第二栅绝缘层的厚度大于该第一栅绝缘层的厚度；以及
一切换顶栅极与一驱动顶栅极，配置于该第二栅绝缘层上，其中该切换顶栅极电性连接该切换底栅极。
2.如权利要求1所述的主动元件，其中该第二栅绝缘层的厚度大于等于该第一栅绝缘层的厚度的4倍。
3.如权利要求1所述的主动元件，其中该第二栅绝缘层的厚度等于该第一栅绝缘层的厚度的5倍。
4.如权利要求1所述的主动元件，其中该切换通道的材质是氧化铟镓锌。
5.如权利要求1所述的主动元件，其中该驱动通道的材质是低温多晶硅。
6.如权利要求1所述的主动元件，其中该第一栅绝缘层在该切换底栅极与该切换通道之间的部分的厚度等于该第一栅绝缘层在该驱动底栅极与该驱动通道之间的部分的厚度。
7.如权利要求1所述的主动元件，其中该第二栅绝缘层在该切换顶栅极与该切换通道之间的部分的厚度等于该第二栅绝缘层在该驱动顶栅极与该驱动通道之间的部分的厚度。
8.如权利要求1所述的主动元件，其中该切换通道的一部分掺杂有氢离子。
9.如权利要求1所述的主动元件，其中该驱动通道的一部分掺杂有磷离子或砷离子。
10.如权利要求1所述的主动元件，还包括一保护层，配置于该第二栅绝缘层上且覆盖该切换顶栅极与该驱动顶栅极。
11.一种主动元件的制造方法，包括：
在一基板上形成一切换底栅极与一驱动底栅极；
在该基板上形成一第一栅绝缘层，其中该第一栅绝缘层覆盖该切换底栅极与该驱动底栅极；
在该第一栅绝缘层上形成一切换通道与一驱动通道；
在该第一栅绝缘层上形成一第二栅绝缘层，其中该第二栅绝缘层覆盖该切换通道与该驱动通道，该第二栅绝缘层的厚度大于该第一栅绝缘层的厚度；以及
在该第二栅绝缘层上形成一切换顶栅极与一驱动顶栅极，并使该切换顶栅极电性连接该切换底栅极，使该驱动通道的一低电位端电性连接该驱动底栅极。
12.如权利要求11所述的主动元件的制造方法，其中该第二栅绝缘层的厚度被形成为大于等于该第一栅绝缘层的厚度的4倍。
13.如权利要求11所述的主动元件的制造方法，其中该第二栅绝缘层的厚度被形成为等于该第一栅绝缘层的厚度的5倍。
14.如权利要求11所述的主动元件的制造方法，其中该切换通道的材质是氧化铟镓锌。
15.如权利要求11所述的主动元件的制造方法，其中该驱动通道的材质是低温多晶硅。
16.如权利要求11所述的主动元件的制造方法，其中该第一栅绝缘层在该切换底栅极与该切换通道之间的部分的厚度被形成为等于该第一栅绝缘层在该驱动底栅极与该驱动通道之间的部分的厚度。
17.如权利要求11所述的主动元件的制造方法，其中该第二栅绝缘层在该切换顶栅极与该切换通道之间的部分的厚度被形成为等于该第二栅绝缘层在该驱动顶栅极与该驱动通道之间的部分的厚度。
18.如权利要求11所述的主动元件的制造方法，还包括在形成该切换顶栅极与该驱动顶栅极之后进行掺杂工艺，以在该切换通道的一部分掺杂氢离子。
19.如权利要求11所述的主动元件的制造方法，还包括在形成该切换顶栅极与该驱动顶栅极之后进行掺杂工艺，以在该驱动通道的一部分掺杂磷离子或砷离子。
20.如权利要求11所述的主动元件的制造方法，还包括在形成该切换顶栅极与该驱动顶栅极之后在该第二栅绝缘层上形成一保护层，其中该保护层覆盖该切换顶栅极与该驱动顶栅极。
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