TWI778496B - 主動元件及其製造方法 - Google Patents

主動元件及其製造方法 Download PDF

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TWI778496B
TWI778496B TW110101700A TW110101700A TWI778496B TW I778496 B TWI778496 B TW I778496B TW 110101700 A TW110101700 A TW 110101700A TW 110101700 A TW110101700 A TW 110101700A TW I778496 B TWI778496 B TW I778496B
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gate
insulating layer
switching
driving
gate insulating
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范揚順
黃震鑠
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友達光電股份有限公司
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Priority to CN202111150973.XA priority patent/CN113903797B/zh
Priority to US17/511,568 priority patent/US20220231170A1/en
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Abstract

一種主動元件及其製造方法。主動元件包括基板、切換底閘極、驅動底閘極、第一閘絕緣層、切換通道、驅動通道、第二閘絕緣層、切換頂閘極與驅動頂閘極。切換底閘極與驅動底閘極配置於基板上。第一閘絕緣層配置於基板上且覆蓋切換底閘極與驅動底閘極。切換通道與驅動通道配置於第一閘絕緣層上。驅動通道具有一低電位端。低電位端電性連接驅動底閘極。第二閘絕緣層配置於第一閘絕緣層上且覆蓋切換通道與驅動通道。第二閘絕緣層的厚度大於第一閘絕緣層的厚度。切換頂閘極與驅動頂閘極配置於第二閘絕緣層上。切換頂閘極電性連接切換底閘極。

Description

主動元件及其製造方法
本發明是有關於一種元件及其製造方法，且特別是有關於一種主動元件及其製造方法。
發光元件陣列顯示裝置是由設置於基板上的陣列排列的多個發光元件構成。繼承目前的發光元件的特性，發光元件陣列顯示裝置具有省電、高效率、高亮度及反應時間快等優點。為了驅動發光元件，目前常採用低溫多晶矽（Low Temperature Poly-Silicon, LTPS）薄膜電晶體作為驅動元件，並搭配氧化銦鎵鋅（Indium Gallium Zinc Oxide, IGZO）薄膜電晶體作為切換元件。然而，若所使用的低溫多晶矽薄膜電晶體的次臨界擺幅（subthreshold swing）較低，則在顯示的亮度值較低時容易因為電流的變化而使亮度變化，降低顯示品質。此外，若所使用的氧化銦鎵鋅薄膜電晶體的次臨界擺幅較高，則切換速度較慢，會有畫面遲滯的現象。
本發明提供一種主動元件及其製造方法，可改善顯示品質不佳的現象。
本發明的主動元件包括一基板、一切換底閘極、一驅動底閘極、一第一閘絕緣層、一切換通道、一驅動通道、一第二閘絕緣層、一切換頂閘極與一驅動頂閘極。切換底閘極與驅動底閘極配置於基板上。第一閘絕緣層配置於基板上且覆蓋切換底閘極與驅動底閘極。切換通道與驅動通道配置於第一閘絕緣層上。驅動通道具有一低電位端。低電位端電性連接驅動底閘極。第二閘絕緣層配置於第一閘絕緣層上且覆蓋切換通道與驅動通道。第二閘絕緣層的厚度大於第一閘絕緣層的厚度。切換頂閘極與驅動頂閘極配置於第二閘絕緣層上。切換頂閘極電性連接切換底閘極。
在本發明的一實施例中，第二閘絕緣層的厚度大於等於第一閘絕緣層的厚度的4倍。
在本發明的一實施例中，第二閘絕緣層的厚度等於第一閘絕緣層的厚度的5倍。
在本發明的一實施例中，切換通道的材質是氧化銦鎵鋅(Indium-Gallium-Zinc Oxide, IGZO)。
在本發明的一實施例中，驅動通道的材質是低溫多晶矽。
在本發明的一實施例中，第一閘絕緣層在切換底閘極與切換通道之間的部分的厚度等於第一閘絕緣層在驅動底閘極與驅動通道之間的部分的厚度。
在本發明的一實施例中，第二閘絕緣層在切換底閘極與切換通道之間的部分的厚度等於第二閘絕緣層在驅動底閘極與驅動通道之間的部分的厚度。
在本發明的一實施例中，切換通道的一部份摻雜有氫離子。
在本發明的一實施例中，驅動通道的一部份摻雜有磷離子或砷離子。
在本發明的一實施例中，主動元件更包括一保護層，配置於第二閘絕緣層上且覆蓋切換頂閘極與驅動頂閘極。
本發明的主動元件的製造方法包括下列步驟。在一基板上形成一切換底閘極與一驅動底閘極。在基板上形成一第一閘絕緣層。第一閘絕緣層覆蓋切換底閘極與驅動底閘極。在第一閘絕緣層上形成一切換通道與一驅動通道。在第一閘絕緣層上形成一第二閘絕緣層。第二閘絕緣層覆蓋切換通道與驅動通道。第二閘絕緣層的厚度大於第一閘絕緣層的厚度。在第二閘絕緣層上形成一切換頂閘極與一驅動頂閘極，並使切換頂閘極電性連接切換底閘極，使驅動通道的一低電位端電性連接驅動底閘極。
在本發明的一實施例中，第二閘絕緣層的厚度被形成為大於等於第一閘絕緣層的厚度的4倍。
在本發明的一實施例中，第二閘絕緣層的厚度被形成為等於第一閘絕緣層的厚度的5倍。
在本發明的一實施例中，切換通道的材質是氧化銦鎵鋅。
在本發明的一實施例中，驅動通道的材質是低溫多晶矽。
在本發明的一實施例中，第一閘絕緣層在切換底閘極與切換通道之間的部分的厚度被形成為等於第一閘絕緣層在驅動底閘極與驅動通道之間的部分的厚度。
在本發明的一實施例中，第二閘絕緣層在切換底閘極與切換通道之間的部分的厚度被形成為等於第二閘絕緣層在驅動底閘極與驅動通道之間的部分的厚度。
在本發明的一實施例中，主動元件的製造方法更包括在形成切換頂閘極與驅動頂閘極之後進行摻雜製程，以在切換通道的一部份摻雜氫離子。
在本發明的一實施例中，主動元件的製造方法更包括在形成切換頂閘極與驅動頂閘極之後進行摻雜製程，以在驅動通道的一部份摻雜磷離子或砷離子。
在本發明的一實施例中，主動元件的製造方法更包括在形成切換頂閘極與驅動頂閘極之後在第二閘絕緣層上形成一保護層，其中保護層覆蓋切換頂閘極與驅動頂閘極。
基於上述，在本發明的主動元件及其製造方法中，不僅可維持較高的驅動元件的次臨界擺幅，也可降低切換元件的次臨界擺幅，進而改善顯示品質。
圖1至圖4是本發明一實施例的主動元件的製造方法剖面流程圖。請參照圖1，本實施例的主動元件的製造方法是先在一基板110上形成一切換底閘極G12與一驅動底閘極G22。形成切換底閘極G12與驅動底閘極G22時，例如是先全面形成一導體層，再將導體層圖案化以形成切換底閘極G12與驅動底閘極G22。接著，在基板110上形成一第一閘絕緣層120。第一閘絕緣層120覆蓋切換底閘極G12與驅動底閘極G22。第一閘絕緣層120的材質例如為氧化矽、氮化矽或氮氧化矽等介電材料。
然後，在第一閘絕緣層120上形成一切換通道C10與一驅動通道C20。在本實施例中，切換通道C10的材質是氧化銦鎵鋅，而驅動通道C20的材質是低溫多晶矽，但本發明不以此為限。例如，切換通道C10的材質也可以是氧化鋅(ZnO)、氧化錫(SnO)、氧化銦鋅(Indium-Zinc Oxide, IZO)、氧化鎵鋅(Gallium-Zinc Oxide, GZO)、氧化鋅錫(Zinc-Tin Oxide, ZTO)、氧化銦錫(Indium-Tin Oxide, ITO)或其他適合的金屬氧化物半導體材料。當切換通道C10與驅動通道C20的材質不同時，兩者可以先後分別形成。
接著請參照圖2，在第一閘絕緣層120上形成一第二閘絕緣層130。第二閘絕緣層130覆蓋切換通道C10與驅動通道C20。第二閘絕緣層130的厚度T14大於第一閘絕緣層120的厚度T12。在此，是以第二閘絕緣層130在切換底閘極G12與切換通道C10之間的部分的厚度T14與第一閘絕緣層120在切換底閘極G12與切換通道C10之間的部分的厚度T12相比。在本實施例中，第一閘絕緣層120在不同位置的厚度大致相同，第二閘絕緣層130在不同位置的厚度也大致相同，僅存在製程因素產生的厚度誤差，但本發明不以此為限。此外，圖示中的厚度僅為示意，並非表示真實厚度。
然後，在第二閘絕緣層130上形成一切換頂閘極G14與一驅動頂閘極G24。形成切換頂閘極G14與驅動頂閘極G24時，例如是先全面形成一導體層，再將導體層圖案化以形成切換頂閘極G14與驅動頂閘極G24。
接著，可進行摻雜製程，以使切換通道C10的一部份以及驅動通道C20的一部份適於連接電極。舉例來說，可在驅動通道C20的一部份摻雜磷離子或砷離子，並在切換通道C10的一部份摻雜氫離子，但本發明不以此為限。
在一實施例中，可全面地進行摻雜製程，以使切換通道C10沒有位於切換頂閘極G14下方的部份摻雜磷離子，並使驅動通道C20沒有位於驅動頂閘極G24下方的部份摻雜磷離子。然後，加熱以完成摻雜。接著，全面地利用氫氣電漿進行另一摻雜製程，以使切換通道C10沒有位於切換頂閘極G14下方的部份摻雜氫離子，並使驅動通道C20沒有位於驅動頂閘極G24下方的部份摻雜氫離子。
在另一實施例中，可先形成遮蔽切換通道C10的罩幕層，然後全面地進行摻雜製程。此時，切換通道C10受到罩幕層的遮蔽而不會被摻雜磷離子，而驅動通道C20沒有位於驅動頂閘極G24下方的部份則會摻雜磷離子。然後，加熱以完成摻雜。接著，移除前述的罩幕層，全面地利用氫氣電漿進行另一摻雜製程，以使切換通道C10沒有位於切換頂閘極G14下方的部份摻雜氫離子，並使驅動通道C20沒有位於驅動頂閘極G24下方的部份摻雜氫離子，以修復驅動通道C20的矽斷鍵。
在又一實施例中，可全面地進行摻雜製程，以使切換通道C10沒有位於切換頂閘極G14下方的部份摻雜磷離子，並使驅動通道C20沒有位於驅動頂閘極G24下方的部份摻雜磷離子。然後，加熱以完成摻雜。接著，形成遮蔽切換通道C10的罩幕層，再全面地利用氫氣電漿進行另一摻雜製程。此時，切換通道C10受到罩幕層的遮蔽而不會被摻雜氫離子，而驅動通道C20沒有位於驅動頂閘極G24下方的部份則摻雜氫離子。
在更一實施例中，可全面地以磷離子進行摻雜製程。然後，形成氫化氮化矽（SiNx:H）層，配置於第二閘絕緣層130上且覆蓋切換頂閘極G14與驅動頂閘極G24。接著，加熱以完成摻雜。如此，可使切換通道C10沒有位於切換頂閘極G14下方的部份摻雜磷離子與氫離子，並使驅動通道C20沒有位於驅動頂閘極G24下方的部份摻雜磷離子與氫離子。
接著請參照圖3，選擇性地在第二閘絕緣層130上形成一保護層140，其中保護層140覆蓋切換頂閘極G14與驅動頂閘極G24。保護層140例如是有機平坦層，其材料例如為聚酯類(PET)、聚烯類、聚丙醯類、聚碳酸酯類、聚環氧烷類、聚苯烯類、聚醚類、聚酮類、聚醇類、聚醛類或其它合適的材料等，但不以此為限。保護層140的材料也可以是氫化氮化矽、氧化矽。
接著請參照圖4，使切換頂閘極G14電性連接切換底閘極G12，使驅動通道C20的一低電位端C22電性連接驅動底閘極G22。在本實施例中，形成了貫穿保護層140且部分位於保護層140的連接件B10與連接件B20。連接件B20還貫穿第二閘絕緣層130。此外，在圖2的步驟中，還在形成切換頂閘極G14與驅動頂閘極G24時，也形成連接件G12A與連接件G22A。因此，切換頂閘極G14可藉由連接件B10與連接件G12A而電性連接切換底閘極G12，驅動通道C20的低電位端C22可藉由連接件B20與連接件G22A電性連接驅動底閘極G22。在此，雖然舉例說明使切換頂閘極G14電性連接切換底閘極G12以及使驅動通道C20的低電位端C22電性連接驅動底閘極G22的方式，但本發明不以此為限。
請再參照圖4，本實施例的主動元件100包括基板110、切換底閘極G12、驅動底閘極G22、第一閘絕緣層120、切換通道C10、驅動通道C20、第二閘絕緣層130、切換頂閘極G14與驅動頂閘極G24。切換底閘極G12與驅動底閘極G22配置於基板110上。第一閘絕緣層120配置於基板110上且覆蓋切換底閘極G12與驅動底閘極G22。切換通道C10與驅動通道C20配置於第一閘絕緣層120上。驅動通道C20具有低電位端C22。低電位端C22電性連接驅動底閘極G22。第二閘絕緣層130配置於第一閘絕緣層120上且覆蓋切換通道C10與驅動通道C20。第二閘絕緣層130的厚度大於第一閘絕緣層120的厚度。切換頂閘極G14與驅動頂閘極G24配置於第二閘絕緣層130上。切換頂閘極G14電性連接切換底閘極G12。
圖5是圖4的主動元件的等效電路圖。請參照圖4與圖5，切換底閘極G12、切換通道C10與切換頂閘極G14是切換元件T10的一部份，而驅動底閘極G22、驅動通道C20與驅動頂閘極G24是驅動元件T20的一部份。切換通道C10的高電位端電性連接資料線DL。切換通道C10的低電位端電性連接驅動頂閘極G24，且切換通道C10的低電位端通過電容CP電性連接一發光元件50。切換底閘極G12與切換頂閘極G14電性連接掃描線GL。驅動通道C20的高電位端電性連接電源VDD。驅動通道C20的低電位端C22電性連接驅動底閘極G22與發光元件50。發光元件50的另一端電性連接共用電路VSS。
根據上述，驅動元件T20具有驅動底閘極G22與驅動頂閘極G24，而此架構的驅動元件T20的次臨界擺幅在第一閘絕緣層120的厚度與第二閘絕緣層130厚度變動時不會有明顯地改變。因此，可讓驅動元件T20的次臨界擺幅維持在較高的狀態，進而提升發光元件50在低亮度時的穩定性。此外，因為第二閘絕緣層130的厚度T14大於第一閘絕緣層120的厚度T12，所以切換元件T10的次臨界擺幅可以維持在較低的狀態，進而提升切換發光元件50的啟閉的速度。
在本實施例中，第一閘絕緣層120在切換底閘極G12與切換通道C10之間的部分的厚度T12等於第一閘絕緣層120在驅動底閘極G22與驅動通道C20之間的部分的厚度T22。此外，在本實施例中，第二閘絕緣層130在切換底閘極G12與切換通道C10之間的部分的厚度T14等於第二閘絕緣層130在驅動底閘極G22與驅動通道C20之間的部分的厚度T24。由於本實施例的第一閘絕緣層120在上述不同位置的厚度大致相同，且第二閘絕緣層130在上述不同位置的厚度也大致相同，因此製程相對簡單且成本較低。
在本實施例中，主動元件100更包括一保護層140，配置於第二閘絕緣層130上且覆蓋切換頂閘極G14與驅動頂閘極G24。
在本實施例中，第二閘絕緣層130的厚度T14被形成為大於等於第一閘絕緣層120的厚度T12的4倍。例如，第二閘絕緣層130的厚度T14被形成為等於第一閘絕緣層120的厚度T12的5倍。如此，驅動元件T20的驅動頂閘極G24的次臨界擺幅會明顯上升，而切換元件T10的切換底閘極G12的次臨界擺幅則不受影響。
綜上所述，在本發明的主動元件及其製造方法中，雙閘極的設計使得切換元件的閘絕緣層的厚度變化對於切換元件的次臨界擺幅的影響降低，且雙閘極的設計使得驅動元件的閘絕緣層的厚度變化可調整驅動元件的次臨界擺幅。因此，可在維持較低的切換元件的次臨界擺幅的前提下，提升驅動元件的次臨界擺幅，進而改善顯示品質。
50:發光元件 100:主動元件 110:基板 120:第一閘絕緣層 130:第二閘絕緣層 140:保護層 G12:切換底閘極 G22:驅動底閘極 C10:切換通道 C20:驅動通道 T12,T14:厚度 G14:切換頂閘極 G24:驅動頂閘極 B10,B20,G12A,G22A:連接件 T10:切換元件 T20:驅動元件 DL:資料線 CP:電容 GL:掃描線 VDD:電源 VSS:共用電路
圖1至圖4是本發明一實施例的主動元件的製造方法剖面流程圖。 圖5是圖4的主動元件的等效電路圖。
100:主動元件 110:基板 120:第一閘絕緣層 130:第二閘絕緣層 140:保護層 G12:切換底閘極 G22:驅動底閘極 C10:切換通道 C20:驅動通道 T12,T14,T22,T24:厚度 G14:切換頂閘極 G24:驅動頂閘極 B10,B20,G12A,G22A:連接件

Claims (20)

  1. 一種主動元件，包括： 一基板； 一切換底閘極與一驅動底閘極，配置於該基板上； 一第一閘絕緣層，配置於該基板上且覆蓋該切換底閘極與該驅動底閘極； 一切換通道與一驅動通道，配置於該第一閘絕緣層上，其中該驅動通道具有一低電位端，該低電位端電性連接該驅動底閘極； 一第二閘絕緣層，配置於該第一閘絕緣層上且覆蓋該切換通道與該驅動通道，其中該第二閘絕緣層的厚度大於該第一閘絕緣層的厚度；以及 一切換頂閘極與一驅動頂閘極，配置於該第二閘絕緣層上，其中該切換頂閘極電性連接該切換底閘極。
  2. 如請求項1所述的主動元件，其中該第二閘絕緣層的厚度大於等於該第一閘絕緣層的厚度的4倍。
  3. 如請求項1所述的主動元件，其中該第二閘絕緣層的厚度等於該第一閘絕緣層的厚度的5倍。
  4. 如請求項1所述的主動元件，其中該切換通道的材質是氧化銦鎵鋅。
  5. 如請求項1所述的主動元件，其中該驅動通道的材質是低溫多晶矽。
  6. 如請求項1所述的主動元件，其中該第一閘絕緣層在該切換底閘極與該切換通道之間的部分的厚度等於該第一閘絕緣層在該驅動底閘極與該驅動通道之間的部分的厚度。
  7. 如請求項1所述的主動元件，其中該第二閘絕緣層在該切換底閘極與該切換通道之間的部分的厚度等於該第二閘絕緣層在該驅動底閘極與該驅動通道之間的部分的厚度。
  8. 如請求項1所述的主動元件，其中該切換通道的一部份摻雜有氫離子。
  9. 如請求項1所述的主動元件，其中該驅動通道的一部份摻雜有磷離子或砷離子。
  10. 如請求項1所述的主動元件，更包括一保護層，配置於該第二閘絕緣層上且覆蓋該切換頂閘極與該驅動頂閘極。
  11. 一種主動元件的製造方法，包括： 在一基板上形成一切換底閘極與一驅動底閘極； 在該基板上形成一第一閘絕緣層，其中該第一閘絕緣層覆蓋該切換底閘極與該驅動底閘極； 在該第一閘絕緣層上形成一切換通道與一驅動通道； 在該第一閘絕緣層上形成一第二閘絕緣層，其中該第二閘絕緣層覆蓋該切換通道與該驅動通道，該第二閘絕緣層的厚度大於該第一閘絕緣層的厚度；以及 在該第二閘絕緣層上形成一切換頂閘極與一驅動頂閘極，並使該切換頂閘極電性連接該切換底閘極，使該驅動通道的一低電位端電性連接該驅動底閘極。
  12. 如請求項11所述的主動元件的製造方法，其中該第二閘絕緣層的厚度被形成為大於等於該第一閘絕緣層的厚度的4倍。
  13. 如請求項11所述的主動元件的製造方法，其中該第二閘絕緣層的厚度被形成為等於該第一閘絕緣層的厚度的5倍。
  14. 如請求項11所述的主動元件的製造方法，其中該切換通道的材質是氧化銦鎵鋅。
  15. 如請求項11所述的主動元件的製造方法，其中該驅動通道的材質是低溫多晶矽。
  16. 如請求項11所述的主動元件的製造方法，其中該第一閘絕緣層在該切換底閘極與該切換通道之間的部分的厚度被形成為等於該第一閘絕緣層在該驅動底閘極與該驅動通道之間的部分的厚度。
  17. 如請求項11所述的主動元件的製造方法，其中該第二閘絕緣層在該切換底閘極與該切換通道之間的部分的厚度被形成為等於該第二閘絕緣層在該驅動底閘極與該驅動通道之間的部分的厚度。
  18. 如請求項11所述的主動元件的製造方法，更包括在形成該切換頂閘極與該驅動頂閘極之後進行摻雜製程，以在該切換通道的一部份摻雜氫離子。
  19. 如請求項11所述的主動元件的製造方法，更包括在形成該切換頂閘極與該驅動頂閘極之後進行摻雜製程，以在該驅動通道的一部份摻雜磷離子或砷離子。
  20. 如請求項11所述的主動元件的製造方法，更包括在形成該切換頂閘極與該驅動頂閘極之後在該第二閘絕緣層上形成一保護層，其中該保護層覆蓋該切換頂閘極與該驅動頂閘極。
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