CN203617268U - 一种增强散热功能的aaqfn封裝件 - Google Patents
一种增强散热功能的aaqfn封裝件 Download PDFInfo
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- CN203617268U CN203617268U CN201320695526.7U CN201320695526U CN203617268U CN 203617268 U CN203617268 U CN 203617268U CN 201320695526 U CN201320695526 U CN 201320695526U CN 203617268 U CN203617268 U CN 203617268U
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- 238000004806 packaging method and process Methods 0.000 title abstract description 12
- 230000002708 enhancing effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000009826 distribution Methods 0.000 claims description 4
- 230000011664 signaling Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
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- 230000006855 networking Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
本实用新型公开了一种增强散热功能的AAQFN封裝件，所述封装件主要由基板、芯片、键合线、塑封体和植球组成。所述基板上是芯片，键合线连接了基板和芯片，塑封体包围了基板、芯片和键合线，基板下有植球，基板、芯片、键合线和植球构成了电路的电源和信号通道。所述植球在基板下按照阵列式无缝分布，填充了基板下部的全部面。该实用新型能提高封装件的散热性能，并提高封装可靠性。
Description
技术领域
本实用新型属于集成电路封装技术领域，具体是一种增强散热功能的AAQFN封裝件。
背景技术
集成电路是信息产业和高新技术的核心，是经济发展的基础。集成电路封装是集成电路产业的主要组成部分，它的发展一直伴随着其功能和器件数的增加而迈进。自20世纪90年代起，它进入了多引脚数、窄间距、小型薄型化的发展轨道。无载体栅格阵列封装（即AAQFN）是为适应电子产品快速发展而诞生的一种新的封装形式，是电子整机实现微小型化、轻量化、网络化必不可少的产品。
传统的无载体栅格阵列封装元件，底部没有焊球，或者焊球仅在底部面板的四周，没有在中心位置（如图9所示），焊接时引脚直接与PCB板连接，与PCB的电气和机械连接是通过在PCB焊盘上印刷焊膏，配合SMT回流焊工艺形成的焊点来实现的。该技术封装可以在同样尺寸条件下实现多引脚、高密度、小型薄型化封装，具有散热性、电性能以及共面性好等特点。
AAQFN封装产品适用于大规模、超大规模集成电路的封装。AAQFN封装的器件大多数用于手机、网络及通信设备、数码相机、微机、笔记本电脑和各类平板显示器等高档消费品市场。掌握其核心技术，具备批量生产能力，将大大缩小国内集成电路产业与国际先进水平的差距，该产品有着广阔市场应用前景。
由于内部结构等问题，目前AAQFN产品在散热方面仍有比较大的限制，直接影响产品的使用及寿命，已成为AAQFN封装件的技术攻关难点。
实用新型内容
为了克服上述现有技术存在的问题，本实用新型提供一种增强散热功能的AAQFN封裝件，该实用新型能提高封装件的散热性能，并提高封装可靠性。
一种增强散热功能的AAQFN封裝件，主要由基板、芯片、键合线、塑封体和植球组成。所述基板上是芯片，键合线连接了基板和芯片，塑封体包围了基板、芯片和键合线，基板下有植球，基板、芯片、键合线和植球构成了电路的电源和信号通道。所述植球在基板下按照阵列式无缝分布，填充了基板下部的全部面。
一种增强散热功能的AAQFN封裝件的工艺流程如下：晶圆减薄、上芯→压焊→塑封→切割→阵列式植球→检验→包装→入库。
附图说明
图1为基板剖面图；
图2为产品上芯后剖面图；
图3为产品压焊后剖面图；
图4为产品塑封后剖面图；
图5为产品切割后剖面图；
图6为产品植球后剖面图；
图7为成品剖面图；
图8为成品俯视图；
图9为传统工艺俯视图。
图中，1为基板、2为芯片、3为键合线、4为塑封体、5为植球。
具体实施方式
下面参照附图对本实用新型做进一步的阐述。
如图所示，一种增强散热功能的AAQFN封裝件，主要由基板1、芯片2、键合线3、塑封体4和植球5组成。所述基板1上是芯片2，键合线3连接了基板1和芯片2，塑封体4包围了基板1、芯片2和键合线3，基板1下有植球5，基板1、芯片2、键合线3和植球5构成了电路的电源和信号通道。所述植球5在基板1下按照阵列式无缝分布，填充了基板1下部的全部面。
一种增强散热功能的AAQFN封裝件的工艺流程如下：晶圆减薄、上芯→压焊→塑封→切割→阵列式植球→检验→包装→入库。
如图1到图8所示，一种增强散热功能的AAQFN封裝件的制作工艺，具体按照以下步骤进行：
1、晶圆减薄、上芯：晶圆减薄到AAQFN封装的常用厚度后，用粘片胶贴到基板上；
2、压焊、塑封、切割同AAQFN产品常规工序；
3、植球：通过常规植球工艺植金属球，锡球或者铜球，分布采用阵列式无缝分布，可优化散热效果，在产品中心植的球更可以改善散热状况，极大提高产品的热性能以及可靠性；
4、检验，包装，入库同AAQFN常规工艺。
Claims (1)
1.一种增强散热功能的AAQFN封裝件，其特征在于：主要由基板（1）、芯片（2）、键合线（3）、塑封体（4）和植球（5）组成；所述基板（1）上是芯片（2），键合线（3）连接了基板（1）和芯片（2），塑封体（4）包围了基板（1）、芯片（2）和键合线（3），基板（1）下有植球（5），基板（1）、芯片（2）、键合线（3）和植球（5）构成了电路的电源和信号通道；所述植球（5）在基板（1）下按照阵列式无缝分布，填充了基板（1）下部的全部面。
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Granted publication date: 20140528 |