CN203238029U - MEMS element provided with structure reducing packaging stress - Google Patents
MEMS element provided with structure reducing packaging stress Download PDFInfo
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- CN203238029U CN203238029U CN 201320205008 CN201320205008U CN203238029U CN 203238029 U CN203238029 U CN 203238029U CN 201320205008 CN201320205008 CN 201320205008 CN 201320205008 U CN201320205008 U CN 201320205008U CN 203238029 U CN203238029 U CN 203238029U
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Abstract
An MEMS element provided with a structure reducing the packaging stress comprises a packaging tube shell and an MEMS chip located in the packaging tube shell. The MEMS chip is composed of a front surface layer, an MEMS structural layer, and a back surface layer, wherein at least one chip mounting column is arranged on the back surface layer. The packaging tube shell comprises a packaging tube shell base board, chip mucilage glue is arranged on the packaging tube shell base board and surrounds the chip mounting column, the MEMS chip is fixed on the packaging tube shell base board through the chip mounting column and the chip mucilage glue, and a packaging cover board seal is arranged at the upper portion of the packaging tube shell. According to the MEMS element, the MEMS chip is fixed on the packaging tube shell base board through the chip mounting column on the back surface layer of the MEMS chip and the chip mucilage glue on the packaging tube shell base board, not only is the contact area of the MEMS chip and the chip mucilage glue in the horizontal direction reduced, but also the total contact area of the MEMS chip and the chip mucilage glue is ensured, and accordingly the good mechanical shock resistance capacity is ensured while the packaging stress is reduced.
Description
Technical field
The utility model belongs to the chip encapsulation technology field, is specifically related to a kind of MEMS element that reduces the encapsulation stress structure that has.
Background technology
Electronic Packaging is that one or more electronic devices and components chips are electrically connected mutually, then is encapsulated in the protection structure, and its objective is as electronic chip provides electrical connection, mechanical protection, chemical attack protection etc.For some electronic product, all counter stress is very responsive for such as the gyroscope in the MEMS device, accelerometer, oscillator or bulk accoustic wave filter etc., need to carry out air-tight packaging to the MEMS chip with ceramic cartridge, Can or preformed plastic case etc.Traditional encapsulating structure as shown in Figure 1, smear bonding die glue 5 on the encapsulating package base plate 21, the MEMS chip 1 of packing into, MEMS chip 1 back layer 13 is fixed on the encapsulating package base plate 21 by bonding die glue 5, like this, MEMS chip 1 only has back layer 13 to contact with encapsulating package base plate 21 by bonding die glue 5, and the positive layer 11 of MEMS chip 1 does not contact with any solid, so encapsulation stress can only be introduced from the back layer of MEMS chip.
Encapsulation stress is inconsistent the causing of thermal coefficient of expansion by MEMS chip, encapsulating package and bonding die glue, and it can cause the MEMS structure generation deformation of counter stress sensitivity, even causes MEMS structure cohesion, MEMS chip to come off or break.The source of encapsulation stress mainly contains two: the one, and encapsulating package, the 2nd, bonding die glue.Because the thermal coefficient of expansion of bonding die glue, encapsulating package and the thermal coefficient of expansion of MEMS chip (mainly being silicon) are different, in the high temperature process process afterwards, in bonding die adhesive curing, cap seal, surface-assembled (SMT) and terminal use's routine use process, variations in temperature can cause that the Volume Changes of MEMS chip and encapsulating package, bonding die glue is inconsistent, thereby produces encapsulation stress.The most frequently used material of MEMS chip is silicon, and its thermal coefficient of expansion is very low, is difficult to find identical with it material, so encapsulation stress can't be avoided.The MEMS chip that encapsulation stress and variations in temperature cause is directly proportional with the volume change between encapsulating material, and therefore, in the situation that material is certain, MEMS chip and encapsulating package contact area are larger, and encapsulation stress is larger.
In the situation that encapsulating package is selected, the method that reduces encapsulation stress has usually: 1, the back layer of thickening MEMS chip, reduce being transmitted to the encapsulation stress of MEMS structure by it.But because the MEMS chip generally all is the MEMS disk material and facility of employing standard, and the MEMS chip volume is generally less, so the back layer of MEMS chip can not be too thick; 2, select the bonding die glue of quality softness, after the load during adhesive curing, stress is released, effectively isolated the encapsulation stress from encapsulating package, but soft bonding die glue is generally organic material, decomposes the gas that discharges in the pyroprocess and can't all overflow, and forms the cavity, gas can expand when variations in temperature subsequently, imports stress.In addition, soft bonding die glue insufficient strength is a little less than the anti-mechanical shock ability; 3, reduce the contact area of MEMS chip and encapsulating package, existing technology mainly contains two kinds, and wherein a kind of is local dotting glue method, as shown in Figure 2, and bonding die glue 5 on the local location point on the encapsulating package base plate 21, and then load onto MEMS chip 1.Like this, 1 of MEMS chip is connected with encapsulating package base plate 21 in the part that bonding die glue 5 is arranged, and contact area is little, and encapsulation stress is corresponding also little.But two shortcomings are arranged: the one, MEMS chip 1 is little with the contact area of bonding die glue 5, anti-mechanical shock ability; The 2nd, during bonding die glue 5, glue point position can't accurately be located, and glue point size can't accurately be controlled, and the position of MEMS chip 1 also can't accurately locate with respect to bonding die glue 5, and encapsulation stress can be transmitted on the MEMS chip unevenly.The another kind of method that reduces MEMS chip and the contact area of encapsulating package is that encapsulating package base plate 21 is graphical, encapsulating package base plate 21 form projection 21 ', as shown in Figure 3, protruding 21 ' put bonding die glue 5, then load onto MEMS chip 1.Like this, 1 of MEMS chip have projection 21 ' the position be connected with encapsulating package base plate 21, contact area is little, encapsulation stress is corresponding also little.But two shortcomings are arranged also: the one, MEMS chip 1 is little with the contact area of bonding die glue 5, anti-mechanical shock ability; The position of the 2nd, MEMS chip 1 with respect to the projection 21 ' can't accurately locate, encapsulation stress also can be transmitted on the MEMS chip unevenly.
The utility model content
The technical problems to be solved in the utility model provides a kind of MEMS element that reduces the encapsulation stress structure that has, and MEMS element of the present utility model can not only reduce the encapsulation stress of MEMS chip well, can also keep the anti-mechanical impact force of MEMS chip.
For solving the problems of the technologies described above, the invention provides a kind of MEMS element that reduces the encapsulation stress structure that has, comprise encapsulating package and the MEMS chip that is positioned at encapsulating package, the MEMS chip is comprised of positive layer, MEMS structure sheaf and back layer, has a upper cavity on the positive layer at least, has a lower chamber on the MEMS structure sheaf at least, cavity and MEMS structure sheaf form an annular seal space up and down, the MEMS structure is positioned at annular seal space, have a press welding block on the positive layer at least, have a load post on the back layer at least; Encapsulating package is comprised of encapsulating package side wall and encapsulating package base plate, bonding die glue is arranged on the encapsulating package base plate, bonding die glue surrounds the load post, the MEMS chip is fixed on the encapsulating package base plate by load post and bonding die glue, the metal welding block is arranged on the encapsulating package side wall, have wire to be connected between metal welding block and the press welding block, the encapsulation cover plate sealing is arranged at encapsulating package top.
The encapsulation stress of MEMS chip depends on the MEMS chip by the contact area of bonding die glue and encapsulating package floor level direction, and anti-mechanical shock ability depends on that MEMS chip and bonding die glued joint the gross area that touches.MEMS element of the present utility model is when reducing MEMS chip and package floor horizontal direction contact area, increased the surface area of load post, guaranteed that MEMS chip and bonding die glue have enough contacts area, thereby when reducing encapsulation stress, guaranteed anti-mechanical shock ability.
Encapsulation stress is that to be transmitted to MEMS by the load post structural, and the load post is fixing with respect to the position of MEMS structure, so the size of bonding die glue is on the not impact of performance of MEMS structure, therefore bonding die glue can be spread upon on the whole encapsulating package base plate, also can only bonding die glue be spread upon on the encapsulating package base plate position corresponding with the load post, to be fixed on the encapsulating package base plate by the load post with the MEMS chip of load post again, between bonding die glue and the load post enough affinity is arranged, bonding die glue can be climb along the load post, by regulating viscosity and the thickness of bonding die glue, bonding die glue is surrounded the load post fully, both reduce encapsulation stress thereby reach, guarantee again the purpose of its anti-mechanical shock ability.
As improvement of the present utility model, load post lateral surface has some sawtooth, form zigzag load post, like this, load post and bonding die glue contact area in the horizontal direction are constant, and encapsulation stress does not change, but the surface area of load post increases, the contact area of load post and bonding die glue increases, the corresponding increase of anti-mechanical shock ability.
Description of drawings
Fig. 1 is MEMS element schematic diagram traditional in the prior art.
Fig. 2 is the MEMS element schematic diagram that reduces encapsulation stress in the prior art by the local dotting glue method of encapsulating package base plate.
Fig. 3 is the MEMS element schematic diagram that reduces encapsulation stress in the prior art by the graphical method of encapsulating package base plate.
Fig. 4 is the MEMS element schematic diagram of embodiment one.
Fig. 5 is the MEMS element schematic diagram of embodiment two.
Fig. 6 is the MEMS element schematic diagram of embodiment three.
Fig. 7 is the M section enlarged drawing of Fig. 6.
Fig. 8 is the MEMS element schematic diagram of embodiment four.
The specific embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
Embodiment one
As shown in Figure 4, has the MEMS element that reduces the encapsulation stress structure, comprise encapsulating package 2 and the MEMS chip 1 that is positioned at encapsulating package 2, MEMS chip 1 is comprised of positive layer 11, MEMS structure sheaf 12 and back layer 13, has a upper cavity on the positive layer 11 at least, has a lower chamber on the MEMS structure sheaf 13 at least, cavity and MEMS structure sheaf 12 form an annular seal space 14 up and down, MEMS structure 12 ' be positioned at annular seal space 14, two press welding blocks 15 are arranged on the positive layer 11, three load posts 16 are arranged on the back layer 13; Encapsulating package 2 is comprised of encapsulating package side wall 22 and encapsulating package base plate 21, with corresponding position, load post 16 position bonding die glue 5 is arranged on the encapsulating package base plate 21, bonding die glue 5 surrounds load post 16, MEMS chip 1 is fixed on the encapsulating package base plate 21 by load post 16 and bonding die glue 5, metal welding block 23 is arranged on the encapsulating package side wall 22, have wire 3 to be connected between metal welding block 23 and the press welding block 15, encapsulation cover plate 4 sealings are arranged at encapsulating package 2 tops.
Embodiment two
As shown in Figure 5, has the MEMS element that reduces the encapsulation stress structure, comprise encapsulating package 2 and the MEMS chip 1 that is positioned at encapsulating package 2, MEMS chip 1 is comprised of positive layer 11, MEMS structure sheaf 12 and back layer 13, has a upper cavity on the positive layer 11 at least, has a lower chamber on the MEMS structure sheaf 13 at least, cavity and MEMS structure sheaf 13 form an annular seal space 14 up and down, MEMS structure 12 ' be positioned at annular seal space 14, two press welding blocks 15 are arranged on the positive layer 11, three load posts 16 are arranged on the back layer 13; Encapsulating package 2 is comprised of encapsulating package side wall 22 and encapsulating package base plate 21, be covered with bonding die glue 5 on the encapsulating package base plate 21, bonding die glue 5 surrounds load post 16, MEMS chip 1 is fixed on the encapsulating package base plate 21 by load post 16 and bonding die glue 5, metal welding block 23 is arranged on the encapsulating package side wall 22, have wire 3 to be connected between metal welding block 23 and the press welding block 15, encapsulation cover plate 4 sealings are arranged at encapsulating package 2 tops.
Embodiment three
Such as Fig. 6, shown in Figure 7, has the MEMS element that reduces the encapsulation stress structure, comprise encapsulating package 2 and the MEMS chip 1 that is positioned at encapsulating package 2, MEMS chip 1 is by positive layer 11, MEMS structure sheaf 12 and back layer 13 form, has a upper cavity on the positive layer 11 at least, has a lower chamber on the MEMS structure sheaf 13 at least, cavity and MEMS structure sheaf 13 form an annular seal space 14 up and down, MEMS structure 12 ' be positioned at annular seal space 14, two press welding blocks 15 are arranged on the positive layer 11, have on the back layer 13 three zigzag load posts 16 ', zigzag load post 16 ' lateral surface some sawtooth are arranged; Encapsulating package 2 is comprised of encapsulating package side wall 22 and encapsulating package base plate 21, with corresponding position, zigzag load post 16 ' position bonding die glue 5 is arranged on the encapsulating package base plate 21, bonding die glue 5 encirclement zigzag load posts 16 ', MEMS chip 1 by zigzag load post 16 ' and bonding die glue 5 be fixed on the encapsulating package base plate 21, metal welding block 23 is arranged on the encapsulating package side wall 22, have wire 3 to be connected between metal welding block 23 and the press welding block 15, encapsulation cover plate 4 sealings are arranged at encapsulating package 2 tops.
Embodiment four
As shown in Figure 8, has the MEMS element that reduces the encapsulation stress structure, comprise encapsulating package 2 and the MEMS chip 1 that is positioned at encapsulating package 2, MEMS chip 1 is comprised of positive layer 11, MEMS structure sheaf 12 and back layer 13, has a upper cavity on the positive layer 11 at least, has a lower chamber on the MEMS structure sheaf 13 at least, cavity and MEMS structure sheaf 13 form an annular seal space 14 up and down, MEMS structure 12 ' be positioned at annular seal space 14, two press welding blocks 15 are arranged on the positive layer 11, have on the back layer 13 three zigzag load posts 16 '; Encapsulating package 2 is comprised of encapsulating package side wall 22 and encapsulating package base plate 21, be covered with bonding die glue 5 on the encapsulating package base plate 21, bonding die glue 5 encirclement zigzag load posts 16 ', MEMS chip 1 by zigzag load post 16 ' and bonding die glue 5 be fixed on the encapsulating package base plate 21, metal welding block 23 is arranged on the encapsulating package side wall 22, have wire 3 to be connected between metal welding block 23 and the press welding block 15, encapsulation cover plate 4 sealings are arranged at encapsulating package 2 tops.
Claims (4)
1. has the MEMS element that reduces the encapsulation stress structure, comprise encapsulating package and the MEMS chip that is positioned at encapsulating package, the MEMS chip is comprised of positive layer, MEMS structure sheaf and back layer, has a upper cavity on the positive layer at least, has a lower chamber on the MEMS structure sheaf at least, cavity and MEMS structure sheaf form an annular seal space up and down, and the MEMS structure is positioned at annular seal space, has a press welding block on the positive layer at least; Encapsulating package is comprised of encapsulating package side wall and encapsulating package base plate, the metal welding block is arranged on the encapsulating package side wall, there is wire to be connected between metal welding block and the press welding block, the encapsulation cover plate sealing is arranged at encapsulating package top, it is characterized in that: have a load post on the back layer at least, bonding die glue is arranged on the encapsulating package base plate, and bonding die glue surrounds the load post, and the MEMS chip is fixed on the encapsulating package base plate by load post and bonding die glue.
2. as claimed in claim 1 have a MEMS element that reduces the encapsulation stress structure, and it is characterized in that: bonding die glue is distributed on the position corresponding with the load post.
3. as claimed in claim 1 have a MEMS element that reduces the encapsulation stress structure, and it is characterized in that: bonding die glue is distributed on the whole encapsulating package base plate.
4. such as each described MEMS element with reduction encapsulation stress structure in the claims 1 to 3, it is characterized in that: load post lateral surface has some sawtooth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320205008 CN203238029U (en) | 2013-04-22 | 2013-04-22 | MEMS element provided with structure reducing packaging stress |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320205008 CN203238029U (en) | 2013-04-22 | 2013-04-22 | MEMS element provided with structure reducing packaging stress |
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| CN203238029U true CN203238029U (en) | 2013-10-16 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105157735A (en) * | 2015-08-20 | 2015-12-16 | 龙微科技无锡有限公司 | Sensor chip, manufacturing method thereof, encapsulation method and sensor core |
| CN105712283A (en) * | 2014-12-02 | 2016-06-29 | 北京自动化控制设备研究所 | LCC package stress release structure |
| CN106829848A (en) * | 2017-03-18 | 2017-06-13 | 安徽北方芯动联科微系统技术有限公司 | MEMS chip and its manufacture method with back side circular arc seamed edge |
| CN108358160A (en) * | 2018-04-18 | 2018-08-03 | 中国兵器工业集团第二四研究所苏州研发中心 | The MEMS device encapsulating structure of the releasable stress of lift-on/lift-off type |
| CN109686708A (en) * | 2018-12-24 | 2019-04-26 | 中国电子科技集团公司第五十八研究所 | A kind of air-tightness and the radiator structure of non-airtight encapsulation |
| CN111115551A (en) * | 2019-12-06 | 2020-05-08 | 上海航天控制技术研究所 | MEMS inertial device for reducing packaging stress through transition layer structure |
| CN113371670A (en) * | 2021-05-19 | 2021-09-10 | 北京航天控制仪器研究所 | Multi-stage anti-overload packaging structure and method for MEMS accelerometer |
| WO2022062279A1 (en) * | 2020-09-22 | 2022-03-31 | 浙江大学 | Low-stress packaging structure for mems acceleration sensor chip |
-
2013
- 2013-04-22 CN CN 201320205008 patent/CN203238029U/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105712283A (en) * | 2014-12-02 | 2016-06-29 | 北京自动化控制设备研究所 | LCC package stress release structure |
| CN105712283B (en) * | 2014-12-02 | 2018-07-31 | 北京自动化控制设备研究所 | A kind of LCC encapsulation stress release structure |
| CN105157735A (en) * | 2015-08-20 | 2015-12-16 | 龙微科技无锡有限公司 | Sensor chip, manufacturing method thereof, encapsulation method and sensor core |
| CN106829848A (en) * | 2017-03-18 | 2017-06-13 | 安徽北方芯动联科微系统技术有限公司 | MEMS chip and its manufacture method with back side circular arc seamed edge |
| CN106829848B (en) * | 2017-03-18 | 2018-08-28 | 安徽北方芯动联科微系统技术有限公司 | MEMS chip and its manufacturing method with the arc-shaped seamed edge in the back side |
| CN108358160B (en) * | 2018-04-18 | 2023-08-01 | 中国兵器工业集团第二一四研究所苏州研发中心 | Hoisting type MEMS device packaging structure capable of releasing stress |
| CN108358160A (en) * | 2018-04-18 | 2018-08-03 | 中国兵器工业集团第二四研究所苏州研发中心 | The MEMS device encapsulating structure of the releasable stress of lift-on/lift-off type |
| CN109686708A (en) * | 2018-12-24 | 2019-04-26 | 中国电子科技集团公司第五十八研究所 | A kind of air-tightness and the radiator structure of non-airtight encapsulation |
| CN111115551A (en) * | 2019-12-06 | 2020-05-08 | 上海航天控制技术研究所 | MEMS inertial device for reducing packaging stress through transition layer structure |
| CN111115551B (en) * | 2019-12-06 | 2023-08-04 | 上海航天控制技术研究所 | MEMS inertial device with reduced packaging stress by transition layer structure |
| WO2022062279A1 (en) * | 2020-09-22 | 2022-03-31 | 浙江大学 | Low-stress packaging structure for mems acceleration sensor chip |
| US11780727B2 (en) | 2020-09-22 | 2023-10-10 | Zhejiang University | Low-stress packaging structure for MEMS acceleration sensor chip |
| CN113371670A (en) * | 2021-05-19 | 2021-09-10 | 北京航天控制仪器研究所 | Multi-stage anti-overload packaging structure and method for MEMS accelerometer |
| CN113371670B (en) * | 2021-05-19 | 2024-05-03 | 北京航天控制仪器研究所 | Multistage overload-resistant packaging structure and method of MEMS accelerometer |
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Granted publication date: 20131016 |