CN104914273A - Sensor for detecting three-dimensional directional acceleration speed - Google Patents
Sensor for detecting three-dimensional directional acceleration speed Download PDFInfo
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- CN104914273A CN104914273A CN201510250312.2A CN201510250312A CN104914273A CN 104914273 A CN104914273 A CN 104914273A CN 201510250312 A CN201510250312 A CN 201510250312A CN 104914273 A CN104914273 A CN 104914273A
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Abstract
The invention discloses a sensor for detecting three-dimensional directional acceleration speed. The sensor includes an X-axis acceleration induction area, a Y-axis acceleration induction area and a Z-axis acceleration induction area; a cover body is bonded to the periphery of a circuit substrate through a sealing adhesive layer, so that a seal cavity can be formed; the Y-axis acceleration induction area includes a Y-directional H-shaped movement sheet with two through holes, two Y-directional movement electrodes and two Y-directional fixed electrodes; the Z-axis acceleration induction area includes a mass block and a supporting shaft; the lower surface of a signal processing chip is bonded to the surface of the cover body of an MEMS acceleration chip through a first insulating adhesive layer; the surface of the circuit substrate of the MEMS acceleration chip is bonded to part of the area of a base plate through a second insulating adhesive layer; the X-axis acceleration induction area and the Y-axis acceleration induction area are located in one row; and the Z-axis acceleration induction area, the X-axis acceleration induction area and the Y-axis acceleration induction area are arranged in parallel. According to the sensor for detecting three-dimensional directional acceleration speed of the invention adopted, the reliability of the device can be improved, and mechanical damage of the internal structure of the device can be effectively avoided, and the sensitivity of the device can be greatly improved.
Description
Technical field
The present invention relates to acceleration transducer technical field, being specifically related to a kind of sensor for detecting three-dimensional acceleration.
Background technology
The research development in recent years of acceleration transducer is rapid, and the high-range acceleration transducer of various performance, range is own through in succession reporting.But acceleration transducer requires very high to anti high overload ability and natural frequency, and anti high overload Capability Requirement can bear a hundreds of thousands range shock load under normal circumstances, and natural frequency requires up to tens kHz, kHz even up to a hundred.Therefore, MEMS high-range acceleration transducer usually causes structural failure because anti high overload ability is poor in the application.For ensureing the reliability of MEMS high-range acceleration transducer when applying, the encapsulation of MEMS high-range acceleration transducer just seems particularly important.Practice shows, the problem of the low and package reliability difference of existing sensor packaging techniques ubiquity anti high overload ability, natural frequency, when running into severe applied environment, often there is the problems such as shell breaks, cover plate depression, chip come off from shell substrate, wire breaking in the MEMS high-range acceleration transducer after namely adopting existing sensor packaging techniques to encapsulate.Based on this, be necessary to invent a kind of sensor for detecting three-dimensional acceleration, to ensure the reliability of acceleration transducer when applying.
Summary of the invention
The object of the invention is to provide a kind of sensor for detecting three-dimensional acceleration, this improves the reliability of device for the sensor detecting three-dimensional acceleration, and effectively can protect the mechanicalness damage of inner structure, the sensitivity aspect simultaneously for induction improves a lot.
For achieving the above object, the technical solution used in the present invention is: a kind of sensor for detecting three-dimensional acceleration, comprise MEMS acceleration chip, for filtering undesired signal and processing signal processing chip and the substrate of induced signal, described MEMS acceleration chip is by lid, micro mechanical system and the circuit substrate for generation of induced signal, this micro mechanical system is by X-axis acceleration induction district, Y-axis acceleration induction district and the Z axis acceleration induction district composition for responding to the motion of extraneous Z axis, described lid and circuit substrate edge are bonding thus form an annular seal space by sealant layer, described micro mechanical system is positioned at annular seal space and at circuit substrate upper surface, the height in sealing chamber is 45 ~ 55 μm,
Described X-axis acceleration induction district comprise there are 2 through holes X to " H " shape motion sheet, 2 X are to moving electrodes and 2 X to fixed electorde, first spring and the second spring separately one end are respectively installed to the left side of X to " H " shape motion sheet, right-hand member, first spring and the second spring separately other end are respectively installed on described circuit substrate, 2 described X lay respectively at X to moving electrodes and also can move to " H " shape motion sheet with this X in 2 through holes of " H " shape motion sheet, described X arrange face-to-face to fixed electorde and X to moving electrodes and its at X immediately below moving electrodes,
Described Y-axis acceleration induction district comprises Y-direction " H " the shape motion sheet with 2 through holes, 2 Y-direction moving electrodes and 2 Y-direction fixed electordes, 3rd spring and the 4th spring separately one end are respectively installed to Y-direction " H " shape motion sheet upper and lower end, 3rd spring and the 4th the spring separately other end are respectively installed on described circuit substrate, can move with this Y-direction " H " shape motion sheet in the through hole that 2 described Y-direction moving electrodes lay respectively at Y-direction " H " shape motion sheet, Y-direction fixed electorde and Y-direction moving electrodes are arranged face-to-face and it is immediately below Y-direction moving electrodes; Y-direction " H " shape motion sheet in described Y-axis acceleration induction district, the 3rd spring are vertical with the second spring rows column direction to moving electrodes, the first spring with X in X-axis acceleration induction district with the 4th spring rows column direction; Described Z axis acceleration induction district comprises quality stick and the back shaft for supporting quality stick center, is equipped with Z axis induction electrode immediately below described quality stick two ends, is equipped with positive stop directly over described quality stick two ends;
Described signal processing chip lower surface is bonding with the top surface of MEMS acceleration chip by the first insulating gel adhesion coating, the circuit substrate surface of this MEMS acceleration chip is bonding with substrate portion region by the second insulating gel adhesion coating, circuit substrate and substrate separately upper surface have the substrate pad in several chip soldering contacts and several distribution substrate both sides of the edge districts, signal processing chip upper surface has several signals input pad and signal exports pad, this signal exports pad and is distributed in signal processing chip both sides of the edge district, some first metal wires are connected across between described chip soldering contact and signal input pad, some second metal wires being distributed in both sides are connected across described signal and export between pad and substrate pad,
Described X-axis acceleration induction district and Y-axis acceleration induction district are positioned at a row, and described Z axis acceleration induction district and X-axis acceleration induction district and Y-axis acceleration induction district be arranged in parallel; Described substrate pad is offered circuit substrate upper surface and is positioned at lid side.
In technique scheme, further improved plan is as follows:
In such scheme, the height of described annular seal space is 50 μm.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect:
1. the present invention is for detecting the sensor of three-dimensional acceleration, its signal processing chip lower surface is bonding with the top surface of MEMS acceleration chip by the first insulating gel adhesion coating, the circuit substrate surface of this MEMS acceleration chip is bonding with substrate portion region by the second insulating gel adhesion coating, circuit substrate and substrate separately upper surface have the substrate pad in several chip soldering contacts and several distribution substrate both sides of the edge districts, signal processing chip upper surface has several signals input pad and signal exports pad, this signal exports pad and is distributed in signal processing chip both sides of the edge district, some first metal wires are connected across between described chip soldering contact and signal input pad, some second metal wires being distributed in both sides are connected across described signal and export between pad and substrate pad, package reliability is high, the stress damage of external force to chip is effectively reduced by the welding of the glue-line that insulate, the position arrangement design of pad can carry out the welding of line in minimum encapsulated space, first makes the shorter cost of the gold thread of line lower, secondly the technique of threading in insulating gel is adopted can to solve the problem of the routing bank shakiness of the high step difference opposite sex, improve the feasibility of product volume production.
2. the present invention is for detecting the sensor of three-dimensional acceleration, its X is equipped with the first projection to " H " shape motion sheet upper and lower end, this first projection is between 2 the first limiting sections of described circuit substrate, Y-direction " H " shape motion sheet upper and lower end is equipped with the second projection, this second projection, between 2 the second limiting sections of described circuit substrate, effectively prevents product under the effect of acceleration, avoiding X-axis, Y-axis acceleration induction district inner structure to damage.
3. the present invention is for detecting the sensor of three-dimensional acceleration, its Z axis acceleration induction district comprises quality stick and the back shaft for supporting quality stick center, Z axis induction electrode is equipped with immediately below described quality stick two ends, positive stop is equipped with directly over described quality stick two ends, effectively can protect the mechanicalness damage of inner structure, the sensitivity aspect simultaneously for induction improves a lot.
4. the present invention is for detecting the sensor of three-dimensional acceleration, its X-axis acceleration induction district and Y-axis acceleration induction district are positioned at a row, described Z axis acceleration induction district and X-axis acceleration induction district and Y-axis acceleration induction district be arranged in parallel, the position that effective minimizing induction zone is shared in chip circuit, in the feasibility of cost and encapsulation advantageously; Secondly, substrate pad is offered circuit substrate upper surface and is positioned at lid side, is conducive to chip array and reduces the difficulty of cutting and routing in encapsulation process.
Accompanying drawing explanation
Fig. 1 is that the present invention is for detecting the sensor construction schematic diagram of three-dimensional acceleration;
Fig. 2 is the left TV structure schematic diagram of accompanying drawing 1;
Fig. 3 be accompanying drawing 1 look up structural representation;
Fig. 4 is MEMS acceleration chip structure schematic diagram of the present invention;
Fig. 5 is micro mechanical system structural representation of the present invention;
Fig. 6 is X-axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention;
Fig. 7 is X-axis acceleration induction district of the present invention partial structurtes schematic diagram;
Fig. 8 is Y-axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention;
Fig. 9 is Z axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention;
Figure 10 be accompanying drawing 9 look up structural representation.
In above accompanying drawing: 1, MEMS acceleration chip; 2, signal processing chip; 3, substrate; 4, lid; 5, micro mechanical system; 6, circuit substrate; 7, X-axis acceleration induction district; 71, X is to " H " shape motion sheet; 72, X is to moving electrodes; 73, X is to fixed electorde; 74, the first spring; 75, the second spring; 8, Y-axis acceleration induction district; 81, Y-direction " H " shape motion sheet; 82, Y-direction moving electrodes; 83, Y-direction fixed electorde; 84, the 3rd spring; 85, the 4th spring; 9, Z axis acceleration induction district; 10, sealant layer; 11, annular seal space; 12, the first insulating gel adhesion coating; 13, the second insulating gel adhesion coating; 14, chip soldering contact; 15, substrate pad; 16, signal input pad; 17, signal exports pad; 18, the first metal wire; 19, the second metal wire; 20, the first projection; 21, the first limiting section; 22, the second projection; 23, the second limiting section; 24, quality stick; 25, back shaft; 26, Z axis induction electrode; 27, positive stop.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment: a kind of sensor for detecting three-dimensional acceleration, comprise MEMS acceleration chip 1, for filtering undesired signal and processing signal processing chip 2 and the substrate 3 of induced signal, described MEMS acceleration chip 1 is by lid 4, micro mechanical system 5 and the circuit substrate 6 for generation of induced signal, this micro mechanical system 5 is by X-axis acceleration induction district 7, Y-axis acceleration induction district 8 and the Z axis acceleration induction district 9 for responding to the motion of extraneous Z axis form, described lid 4 and circuit substrate 6 edge are bonding thus form an annular seal space 11 by sealant layer 10, described micro mechanical system 5 is positioned at annular seal space 11 and at circuit substrate 6 upper surface, the height in sealing chamber 11 is 45 ~ 55 μm,
Described X-axis acceleration induction district 7 comprise there are 2 through holes X to " H " shape motion sheet 71, 2 X are to moving electrodes 72 and 2 X to fixed electorde 73, first spring 74 and the second spring 75 are respectively installed to the left side of X to " H " shape motion sheet 71 in one end separately, right-hand member, first spring 74 and the second spring 75 separately other end are respectively installed on described circuit substrate 6, 2 described X lay respectively at X to moving electrodes 72 and also can move to " H " shape motion sheet 71 with this X in 2 through holes of " H " shape motion sheet 71, described X arrange face-to-face to fixed electorde 73 and X to moving electrodes 72 and its at X immediately below moving electrodes 72,
Described Y-axis acceleration induction district 8 comprises Y-direction " H " the shape motion sheet 81 with 2 through holes, 2 Y-direction moving electrodes 82 and 2 Y-direction fixed electordes 83, 3rd spring 84 and the 4th spring 85 are respectively installed on Y-direction " H " shape motion sheet 81 in one end separately, lower end, 3rd spring 84 and the 4th the spring 85 separately other end are respectively installed on described circuit substrate 6, can move with this Y-direction " H " shape motion sheet 81 in the through hole that 2 described Y-direction moving electrodes 82 lay respectively at Y-direction " H " shape motion sheet 81, Y-direction fixed electorde 83 and Y-direction moving electrodes 82 arrange face-to-face and it is immediately below Y-direction moving electrodes 82, in described Y-axis acceleration induction district 8, Y-direction " H " shape motion sheet the 81, the 3rd spring 84 is vertical with the second spring 75 orientation to moving electrodes 72, first spring 74 with X in X-axis acceleration induction district 7 with the 4th spring 85 orientation, described Z axis acceleration induction district 9 comprises quality stick 24 and the back shaft 25 for supporting quality stick 24 center, is equipped with Z axis induction electrode 26 immediately below described quality stick 24 two ends, is equipped with positive stop 27 directly over described quality stick 24 two ends,
Described signal processing chip 2 lower surface is bonding with lid 4 surface of MEMS acceleration chip 1 by the first insulating gel adhesion coating 12, circuit substrate 6 surface of this MEMS acceleration chip 1 is bonding with substrate 3 subregion by the second insulating gel adhesion coating 13, circuit substrate 6 and substrate 3 separately upper surface have the substrate pad 15 in several chip soldering contacts 14 and several distribution substrate 3 both sides of the edge districts, signal processing chip 2 upper surface has several signals input pad 16 and signal exports pad 17, this signal exports pad 17 and is distributed in signal processing chip 2 both sides of the edge district, some first metal wires 18 are connected across between described chip soldering contact 14 and signal input pad 16, some second metal wires 19 being distributed in both sides are connected across described signal and export between pad 17 and substrate pad 15.
Above-mentioned X is equipped with the first projection 20 to " H " shape motion sheet 71 upper and lower end, and this first projection is between 2 the first limiting sections 21 of described circuit substrate 6.
Above-mentioned Y-direction " H " shape motion sheet 81 upper and lower end is equipped with the second projection 22, and this second projection 22 is between 2 the second limiting sections 23 of described circuit substrate 6.
The height of above-mentioned annular seal space 11 is 50 μm.
Above-mentioned X-axis acceleration induction district 7 and Y-axis acceleration induction district 8 are positioned at a row, and described Z axis acceleration induction district 9 be arranged in parallel with X-axis acceleration induction district 7 and Y-axis acceleration induction district 8.
Aforesaid substrate pad 15 is offered circuit substrate 6 upper surface and is positioned at lid 4 side; Above-mentioned through hole is square.
Above-described embodiment, only for technical conceive of the present invention and feature are described, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences done according to Spirit Essence of the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (2)
1. one kind for detecting the sensor of three-dimensional acceleration, it is characterized in that: comprise MEMS acceleration chip (1), for filtering undesired signal and processing signal processing chip (2) and the substrate (3) of induced signal, described MEMS acceleration chip (1) is by lid (4), micro mechanical system (5) and the circuit substrate (6) for generation of induced signal, this micro mechanical system (5) is by X-axis acceleration induction district (7), Y-axis acceleration induction district (8) and Z axis acceleration induction district (9) composition for responding to the motion of extraneous Z axis, described lid (4) and circuit substrate (6) edge are bonding thus form an annular seal space (11) by sealant layer (10), described micro mechanical system (5) is positioned at annular seal space (11) and at circuit substrate (6) upper surface, the height in sealing chamber (11) is 45 ~ 55 μm,
Described X-axis acceleration induction district (7) comprise there are 2 through holes X to " H " shape motion sheet (71), 2 X are to moving electrodes (72) and 2 X to fixed electorde (73), first spring (74) and the second spring (75) are respectively installed to the left side of X to " H " shape motion sheet (71) in one end separately, right-hand member, first spring (74) and the second spring (75) the separately other end are respectively installed on described circuit substrate (6), 2 described X lay respectively at X to moving electrodes (72) and also can move to " H " shape motion sheet (71) with this X in 2 through holes of " H " shape motion sheet (71), described X arrange face-to-face to fixed electorde (73) and X to moving electrodes (72) and its at X immediately below moving electrodes (72),
Described Y-axis acceleration induction district (8) comprises Y-direction " H " shape motion sheet (81) with 2 through holes, 2 Y-direction moving electrodes (82) and 2 Y-direction fixed electordes (83), 3rd spring (84) and the 4th spring (85) are respectively installed on Y-direction " H " shape motion sheet (81) in one end separately, lower end, 3rd spring (84) and the 4th spring (85) the separately other end are respectively installed on described circuit substrate (6), can move with this Y-direction " H " shape motion sheet (81) in the through hole that 2 described Y-direction moving electrodes (82) lay respectively at Y-direction " H " shape motion sheet (81), Y-direction fixed electorde (83) and Y-direction moving electrodes (82) arrange face-to-face and it is immediately below Y-direction moving electrodes (82), in described Y-axis acceleration induction district (8), Y-direction " H " shape motion sheet (81), the 3rd spring (84) and the 4th spring (85) orientation are vertical with the second spring (75) orientation to moving electrodes (72), the first spring (74) with X in X-axis acceleration induction district (7), described Z axis acceleration induction district (9) comprises quality stick (24) and the back shaft (25) for supporting quality stick (24) center, be equipped with Z axis induction electrode (26) immediately below described quality stick (24) two ends, directly over described quality stick (24) two ends, be equipped with positive stop (27),
Described signal processing chip (2) lower surface is bonding with lid (4) surface of MEMS acceleration chip (1) by the first insulating gel adhesion coating (12), circuit substrate (6) surface of this MEMS acceleration chip (1) is bonding with substrate (3) subregion by the second insulating gel adhesion coating (13), circuit substrate (6) and substrate (3) separately upper surface have the substrate pad (15) in several chip soldering contacts (14) and several distribution substrate (3) both sides of the edge districts, signal processing chip (2) upper surface has several signals input pad (16) and signal exports pad (17), this signal exports pad (17) and is distributed in signal processing chip (2) both sides of the edge district, some first metal wires (18) are connected across between described chip soldering contact (14) and signal input pad (16), some second metal wires (19) being distributed in both sides are connected across described signal and export between pad (17) and substrate pad (15),
Described X-axis acceleration induction district (7) and Y-axis acceleration induction district (8) are positioned at a row, and described Z axis acceleration induction district (9) be arranged in parallel with X-axis acceleration induction district (7) and Y-axis acceleration induction district (8); Described substrate pad (15) is offered circuit substrate (6) upper surface and is positioned at lid (4) side.
2. the sensor for detecting three-dimensional acceleration according to claim 1, is characterized in that: the height of described annular seal space (11) is 50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510250312.2A CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310324970.2A CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
| CN201510250312.2A CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
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| CN201310324970.2A Division CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
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| CN201510250312.2A Active CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
| CN201510250164.4A Active CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105371845A (en) * | 2015-12-17 | 2016-03-02 | 安徽寰智信息科技股份有限公司 | Inertia tracking module |
| CN111398630A (en) * | 2018-12-25 | 2020-07-10 | 精工爱普生株式会社 | Inertial sensor, electronic apparatus, and moving object |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105628022A (en) * | 2015-12-17 | 2016-06-01 | 安徽寰智信息科技股份有限公司 | Inertial tracking module applied to three-dimensional human-machine interaction system |
| CN105466426A (en) * | 2015-12-17 | 2016-04-06 | 安徽寰智信息科技股份有限公司 | Tracking system for motion inertia |
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- 2013-07-30 CN CN201310324970.2A patent/CN103412147B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103412147A (en) | 2013-11-27 |
| CN103412147B (en) | 2015-05-20 |
| CN104880574A (en) | 2015-09-02 |
| CN104914273B (en) | 2018-05-22 |
| CN104880574B (en) | 2018-12-14 |
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