CN104880574B - 3-axis acceleration sensing chip - Google Patents
3-axis acceleration sensing chip Download PDFInfo
- Publication number
- CN104880574B CN104880574B CN201510250164.4A CN201510250164A CN104880574B CN 104880574 B CN104880574 B CN 104880574B CN 201510250164 A CN201510250164 A CN 201510250164A CN 104880574 B CN104880574 B CN 104880574B
- Authority
- CN
- China
- Prior art keywords
- chip
- substrate
- spring
- piece
- axis acceleration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
The present invention discloses a kind of micro electronmechanical sensing chip, including MEMS acceleration chip, signal processing chip and substrate, and MEMS acceleration chip is by lid, micro mechanical system and circuit substrate for generating inductive signal；Micro mechanical system is located in seal chamber and in circuit substrate upper surface, the height of the seal chamber is 45 ~ 55 μm, signal processing chip lower surface is Nian Jie with the top surface of MEMS acceleration chip by the first insulation adhesive layer, the circuit substrate surface of this MEMS acceleration chip is Nian Jie with substrate portion region by the second insulation adhesive layer, and respectively upper surface has several chip pads and several are distributed the substrate pad in substrate both sides of the edge areas for circuit substrate and substrate；Y-direction " H " the shape movement piece upper and lower end is equipped with the second convex block, which is located between 2 the second limiting sections of the circuit substrate, and the height of the seal chamber is 50 μm.The micro electronmechanical sensing chip of the present invention improves the reliability of device, and effectively prevents product from avoiding X-axis, the damage of Y-axis acceleration induction area's internal structure under the action of acceleration.
Description
Technical field
The present invention relates to acceleration transducer technical fields, and in particular to a kind of 3-axis acceleration sensing chip.
Background technique
Micro electro-mechanical systems acceleration sensor due to small in size, light weight, at low cost, high reliability and by pass
Note, the aerospace and weapons scientific domain especially having high requirements in volume, quality and the reliability to device have very big
Application prospect.The research of acceleration transducer is quickly grown in recent years, various performances, range high-range acceleration transducer oneself
It is reported in succession.But acceleration transducer is very high to anti high overload ability and intrinsic frequency requirement, resists exceed under normal conditions
Loading capability requires that hundreds of thousands range shock loading can be born, and intrinsic frequency requires to be up to tens kHz or even kHz up to a hundred.Cause
This, MEMS high-range acceleration transducer usually leads to structural failure since anti high overload ability is poor in the application.To protect
Reliability of the MEMS high-range acceleration transducer in application is demonstrate,proved, the encapsulation of MEMS high-range acceleration transducer just seems outstanding
It is important.Practice have shown that the existing generally existing anti high overload ability of sensor packaging techniques is poor, intrinsic frequency is low and encapsulation
The problem of poor reliability, is encountering evil using the MEMS high-range acceleration transducer after the encapsulation of existing sensor packaging techniques
When bad application environment, often there is shell rupture, the problems such as cover board recess, chip fall off from shell substrate, wire breaking.Base
In this, it is necessary to a kind of 3-axis acceleration sensing chip is invented, to guarantee reliability of the acceleration transducer in application.
Summary of the invention
It is an object of the present invention to provide a kind of 3-axis acceleration sensing chip, this 3-axis acceleration sensing chip improves device
Reliability and effectively reduce external force to the stress damage of chip.
In order to achieve the above objectives, the technical solution adopted by the present invention is that: a kind of 3-axis acceleration sensing chip, including MEMS
Acceleration chip, for filtering interference signal and handling the signal processing chip and substrate of inductive signal, the MEMS acceleration
Chip is by lid, micro mechanical system and circuit substrate for generating inductive signal, and the micro mechanical system is by X-axis acceleration induction
Area, Y-axis acceleration induction area and the Z axis acceleration induction district's groups for incuding extraneous Z axis movement are at the lid and circuit base
Piece edge is bonded to form a seal chamber by sealant layer, and the micro mechanical system is located in seal chamber and in circuit
Substrate upper surface, the height of the seal chamber are 45 ~ 55 μm；
X-axis acceleration induction area includes that the X with 2 through-holes to " H " shape moves piece, 2 X to moving electrodes and 2
A X is to fixed electrode, and respectively one end is respectively installed to the left and right end that X moves piece to " H " shape for the first spring and second spring, the
Respectively the other end is respectively installed on the circuit substrate for one spring and second spring, and 2 X are located to moving electrodes
X is moved in 2 through-holes of piece to " H " shape and can be moved piece to " H " shape with the X and move, the X to fixation electrode and X to
Moving electrodes be arranged face-to-face and its in X to the underface of moving electrodes；
Y-axis acceleration induction area includes Y-direction " H " shape movement piece, 2 Y-direction moving electrodes and 2 with 2 through-holes
Respectively one end is respectively installed to Y-direction " H " shape movement piece upper and lower end, third for the fixed electrode of a Y-direction, third spring and the 4th spring
Respectively the other end is respectively installed on the circuit substrate for spring and the 4th spring, and 2 Y-direction moving electrodes are located at Y
It is moved to " H " shape in the through-hole of piece and can move piece with Y-direction " H " shape and move, the fixed electrode of Y-direction and Y-direction moving electrodes
It is arranged face-to-face and it is in the underface of Y-direction moving electrodes；Y-direction " H " shape moves piece, third in Y-axis acceleration induction area
X is to moving electrodes, the first spring and second spring arrangement side in spring and the 4th spring orientation and X-axis acceleration induction area
To vertical；Z axis acceleration induction area includes quality stick and the support shaft for being used to support quality stick center, the quality
It is equipped with Z axis induction electrode immediately below stick both ends, is equipped with limited block right above quality stick both ends；
The signal processing chip lower surface is viscous by the top surface of the first insulation adhesive layer and MEMS acceleration chip
It connects, the circuit substrate surface of this MEMS acceleration chip is Nian Jie with substrate portion region by the second insulation adhesive layer, circuit base
Respectively upper surface has several chip pads and the substrate weldering in several distribution substrate both sides of the edge areas for piece and substrate
Contact, signal processing chip upper surface have several signals input pad and signal output pad, this signal is defeated
Pad is distributed in signal processing chip both sides of the edge area out, and several first metal wires are connected across the chip pad and signal
It inputs between pad, several second metal wires for being distributed in two sides are connected across the signal output pad and substrate pad
Between；
Y-direction " H " the shape movement piece upper and lower end is equipped with the second convex block, which is located at the 2 of the circuit substrate
Between a second limiting section, the height of the seal chamber is 50 μm.
Further improved scheme is as follows in above-mentioned technical proposal:
In above scheme, the X moves piece upper and lower end to " H " shape and is equipped with the first convex block, which is located at described
Between 2 the first limiting sections of circuit substrate.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art:
1. 3-axis acceleration sensing chip of the present invention, signal processing chip lower surface by the first insulation adhesive layer with
The top surface of MEMS acceleration chip is bonded, and the circuit substrate surface of this MEMS acceleration chip passes through the second insulation adhesive layer
Nian Jie with substrate portion region, respectively upper surface has several chip pads and several points for circuit substrate and substrate
The substrate pad in cloth substrate both sides of the edge area, signal processing chip upper surface have several signals input pad and
Signal exports pad, this signal output pad is distributed in signal processing chip both sides of the edge area, several first metal wires across
It is connected between the chip pad and signal input pad, several second metal wires for being distributed in two sides are connected across the letter
Number between output pad and substrate pad, package reliability is high, effectively reduces external force to core by the welding for the glue-line that insulate
The stress damage of piece, the position arrangement design of pad can carry out the welding of line in minimum encapsulated space, and first makes
The gold thread of line is shorter, and cost is lower, secondly can solve the routing bank of the high step difference opposite sex using the technique threaded in insulating cement
Unstable problem improves the feasibility of product volume production.
2. 3-axis acceleration sensing chip of the present invention, X moves piece upper and lower end to " H " shape and is equipped with the first convex block, should
First convex block is located between 2 the first limiting sections of the circuit substrate, and Y-direction " H " shape movement piece upper and lower end is equipped with second
Convex block, second convex block are located between 2 the second limiting sections of the circuit substrate, effectively prevent product in the work of acceleration
X-axis, the damage of Y-axis acceleration induction area's internal structure are avoided under.
3. 3-axis acceleration sensing chip of the present invention, Z axis acceleration induction area includes quality stick and is used to support matter
The support shaft at stick center is measured, Z axis induction electrode is equipped with immediately below quality stick both ends, the quality stick two is rectified
Top is equipped with limited block, and the mechanicalness damage of energy effective protection internal structure has simultaneously for the sensitivity aspect of induction
Very big raising.
4. 3-axis acceleration sensing chip of the present invention, X-axis acceleration induction area and Y-axis acceleration induction area are located at one
Row, Z axis acceleration induction area are arranged in parallel with X-axis acceleration induction area and Y-axis acceleration induction area, effective to reduce sense
The position for answering area shared in chip circuit, in terms of cost and the feasibility of encapsulation advantageously；Secondly, substrate pad is opened
If circuit substrate upper surface and be located at lid side, be conducive to chip array and reduce encapsulation process in cutting and routing difficulty
Degree.
Detailed description of the invention
Fig. 1 is 3-axis acceleration sensing chip structural schematic diagram of the present invention；
Fig. 2 is the left view structural representation of attached drawing 1；
Fig. 3 is the present invention looks up structural representation of attached drawing 1；
Fig. 4 is MEMS acceleration chip structure schematic diagram of the present invention；
Fig. 5 is micro mechanical system structural schematic diagram of the present invention；
Fig. 6 is X-axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention；
Fig. 7 is X-axis acceleration induction of the present invention area partial structural diagram；
Fig. 8 is Y-axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention；
Fig. 9 is Z axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention；
Figure 10 is the present invention looks up structural representation of attached drawing 9.
In the figures above: 1, MEMS acceleration chip；2, signal processing chip；3, substrate；4, lid；5, micromechanics system
System；6, circuit substrate；7, X-axis acceleration induction area；71, X moves piece to " H " shape；72, X is to moving electrodes；73, X is electric to fixing
Pole；74, the first spring；75, second spring；8, Y-axis acceleration induction area；81, Y-direction " H " shape moves piece；82, Y-direction movement electricity
Pole；84, third spring；85, the 4th spring；9, Z axis acceleration induction area；10, sealant layer；11, seal chamber；12, first absolutely
Edge adhesive layer；13, the second insulation adhesive layer；14, chip pad；15, substrate pad；16, signal inputs pad；17,
Signal exports pad；18, the first metal wire；19, the second metal wire；20, the first convex block；21, the first limiting section；22, second
Convex block；23, the second limiting section；24, quality stick；25, support shaft；26, Z axis induction electrode；27, limited block.
Specific embodiment
The present invention will be further described below with reference to examples:
Embodiment: a kind of 3-axis acceleration sensing chip, including MEMS acceleration chip 1, for filtering interference signal simultaneously
The signal processing chip 2 and substrate 3 of inductive signal are handled, the MEMS acceleration chip 1 is by lid 4, micro mechanical system 5 and uses
In the circuit substrate 6 for generating inductive signal, the micro mechanical system 5 is by X-axis acceleration induction area 7,8 and of Y-axis acceleration induction area
Z axis acceleration induction area 9 for incuding extraneous Z axis movement forms, and the lid 4 passes through close with 6 edge of circuit substrate
The bonding of adhesive layer 10 is to form a seal chamber 11, and the micro mechanical system 5 is located in seal chamber 11 and the table on circuit substrate 6
Face, the height of the seal chamber 11 are 45 ~ 55 μm；
X-axis acceleration induction area 7 includes that the X with 2 through-holes moves 71,2 X of piece to moving electrodes to " H " shape
To fixed electrode 73, the first spring 74 and the respective one end of second spring 75 are respectively installed to X and move piece 71 to " H " shape 72 and 2 X
Left and right end, the first spring 74 and the respective other end of second spring 75 be respectively installed on the circuit substrate 6,2 X
X is located to moving electrodes 72 moves in 2 through-holes of piece 71 to " H " shape and can move piece 71 to " H " shape with the X start shipment
It is dynamic, the X to fixed electrode 73 and X to moving electrodes 72 face-to-face setting and its in X to the underface of moving electrodes 72；
Y-axis acceleration induction area 8 includes Y-direction " H " shape movement 81,2 Y-direction moving electrodes of piece with 2 through-holes
The fixed electrode of 82 and 2 Y-directions, third spring 84 and the respective one end of the 4th spring 85 are respectively installed to Y-direction " H " shape movement piece 81
Upper and lower end, third spring 84 and the respective other end of the 4th spring 85 are respectively installed on the circuit substrate 6,2 Y-directions
Moving electrodes 82 are located in the through-hole of Y-direction " H " shape movement piece 81 and can move piece 81 with Y-direction " H " shape and move, Y
It is arranged face-to-face to fixed electrode and Y-direction moving electrodes 82 and it is in the underface of Y-direction moving electrodes 82；The Y-axis acceleration
X in Y-direction " H " shape movement piece 81, third spring 84 and 85 orientation of the 4th spring and X-axis acceleration induction area 7 in induction zone 8
It is vertical with 75 orientation of second spring to moving electrodes 72, the first spring 74；Z axis acceleration induction area 9 includes quality
Stick 24 and the support shaft 25 for being used to support 24 center of quality stick, 24 both ends of quality stick underface are equipped with Z axis sense
Electrode 26 is answered, is equipped with limited block 27 right above 24 both ends of quality stick；
4 table of lid that 2 lower surface of signal processing chip passes through the first insulation adhesive layer 12 and MEMS acceleration chip 1
6 surface of circuit substrate of face bonding, this MEMS acceleration chip 1 is viscous by the second insulation adhesive layer 13 and 3 partial region of substrate
It connects, circuit substrate 6 and the respective upper surface of substrate 3 have several chip pads 14 and several distribution 3 two sides of substrate
The substrate pad 15 of marginal zone, 2 upper surface of signal processing chip have several signals input pad 16 and signal
Pad 17 is exported, this signal output pad 17 is distributed in 2 both sides of the edge area of signal processing chip, several first metal wires 18
It is connected across between the chip pad 14 and signal input pad 16, is distributed in several second metal wires 19 bridging of two sides
It is exported between pad 17 and substrate pad 15 in the signal.
Above-mentioned X moves 71 upper and lower end of piece to " H " shape and is equipped with the first convex block 20, which is located at the circuit base
Between 2 the first limiting sections 21 of piece 6.
Above-mentioned Y-direction " H " shape movement 81 upper and lower end of piece is equipped with the second convex block 22, which is located at the circuit
Between 2 the second limiting sections 23 of substrate 6.
The height of above-mentioned seal chamber 11 is 50 μm.
Above-mentioned X-axis acceleration induction area 7 and Y-axis acceleration induction area 8 are located at a row, Z axis acceleration induction area 9 with
X-axis acceleration induction area 7 and Y-axis acceleration induction area 8 are arranged in parallel.
Aforesaid substrate pad 15 opens up 6 upper surface of circuit substrate and is located at 4 side of lid；Above-mentioned through-hole is rectangular.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (1)
1. a kind of 3-axis acceleration sensing chip, it is characterised in that: including MEMS acceleration chip (1), for filtering interference letter
Number and handle the signal processing chip (2) and substrate (3) of inductive signal, the MEMS acceleration chip (1) include lid (4),
Micro mechanical system (5) and circuit substrate (6) for generating inductive signal, the micro mechanical system (5) is by X-axis acceleration induction area
(7), Y-axis acceleration induction area (8) and Z axis acceleration induction area (9) composition for incuding extraneous Z axis movement, the lid
(4) Nian Jie to formation one seal chamber (11), the micromechanics system by sealant layer (10) with circuit substrate (6) edge
System (5) is located in seal chamber (11) and in circuit substrate (6) upper surface；
X-axis acceleration induction area (7) includes that the X with 2 through-holes to " H " shape moves piece (71), 2 X to moving electrodes
(72) and 2 X are to electrode (73) are fixed, and the first spring (74) and second spring (75) are respectively respectively installed to X to " H " shape in one end
The left and right end of piece (71) is moved, respectively the other end is respectively installed to the circuit base for the first spring (74) and second spring (75)
On piece (6), 2 X to moving electrodes (72) be located at X moved in 2 through-holes of piece (71) to " H " shape and with the X to
" H " shape movement piece (71) moves together, and the X is to fixed electrode (73) and X is arranged face-to-face to moving electrodes (72) and it is in X
To the underface of moving electrodes (72)；
Y-axis acceleration induction area (8) includes the movement of Y-direction " H " shape piece (81), 2 Y-direction moving electrodes with 2 through-holes
(82) and the fixed electrode of 2 Y-directions, third spring (84) and the respective one end of the 4th spring (85) are respectively installed to the movement of Y-direction " H " shape
Respectively the other end is respectively installed to the circuit substrate (6) for piece (81) upper and lower end, third spring (84) and the 4th spring (85)
On, 2 Y-direction moving electrodes (82) are located in the through-hole of Y-direction " H " shape movement piece (81) and move with Y-direction " H " shape
Piece (81) moves together, and the fixed electrode of Y-direction is arranged face-to-face with Y-direction moving electrodes (82) and it is in Y-direction moving electrodes (82)
Underface；Y-direction " H " shape movement piece (81), third spring (84) and the 4th spring (85) in Y-axis acceleration induction area (8)
X is arranged to moving electrodes (72), the first spring (74) and second spring (75) in orientation and X-axis acceleration induction area (7)
Direction is vertical；Z axis acceleration induction area (9) includes quality stick (24) and the branch for being used to support quality stick (24) center
It supports axis (25), is equipped with Z axis induction electrode (26) immediately below quality stick (24) both ends, quality stick (24) both ends
Surface is equipped with limited block (27)；
The lid that signal processing chip (2) lower surface passes through the first insulation adhesive layer (12) and MEMS acceleration chip (1)
(4) surface is bonded, and circuit substrate (6) surface of this MEMS acceleration chip (1) passes through the second insulation adhesive layer (13) and substrate
(3) partial region is bonded, and circuit substrate (6) upper surface is provided with several chip pads (14), and substrate (3) upper surface is provided with
Several are distributed in the substrate pad (15) in substrate (3) both sides of the edge area, and signal processing chip (2) is if upper surface has
Dry signal input pad (16) and signal output pad (17), this signal output pad (17) are distributed in signal processing
Chip (2) both sides of the edge area, several first metal wires (18) are connected across the chip pad (14) and signal input pad
(16) between, several second metal wires (19) for being distributed in two sides are connected across signal output pad (17) and substrate welding
Between point (15)；
Described Y-direction " H " shape movement piece (81) upper and lower end is equipped with the second convex block (22), which is located at the electricity
Between 2 the second limiting sections (23) of roadbed piece (6), the height of the seal chamber (11) is 50 μm；The X is moved to " H " shape
Piece (71) upper and lower end is equipped with the first convex block (20), which is located at 2 the first limiting sections of the circuit substrate (6)
(21) between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510250164.4A CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310324970.2A CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
| CN201510250164.4A CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310324970.2A Division CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104880574A CN104880574A (en) | 2015-09-02 |
| CN104880574B true CN104880574B (en) | 2018-12-14 |
Family
ID=49605173
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310324970.2A Active CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
| CN201510250312.2A Active CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
| CN201510250164.4A Active CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310324970.2A Active CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
| CN201510250312.2A Active CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN103412147B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105628022A (en) * | 2015-12-17 | 2016-06-01 | 安徽寰智信息科技股份有限公司 | Inertial tracking module applied to three-dimensional human-machine interaction system |
| CN105466426A (en) * | 2015-12-17 | 2016-04-06 | 安徽寰智信息科技股份有限公司 | Tracking system for motion inertia |
| CN105371845A (en) * | 2015-12-17 | 2016-03-02 | 安徽寰智信息科技股份有限公司 | Inertia tracking module |
| JP2020101484A (en) * | 2018-12-25 | 2020-07-02 | セイコーエプソン株式会社 | Inertia sensor, electronic apparatus and moving body |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790029A (en) * | 2004-12-16 | 2006-06-21 | 富士通媒体部品株式会社 | Acceleration sensor |
| CN101270989A (en) * | 2008-03-14 | 2008-09-24 | 江苏英特神斯科技有限公司 | Integrated 5-axis movement sensor based on MEMS technology |
| CN102401842A (en) * | 2011-07-08 | 2012-04-04 | 上海亚尚电子科技有限公司 | Non-equal height comb teeth capacitive triaxial acceleration transducer and method for manufacturing same |
| CN102955046A (en) * | 2012-10-23 | 2013-03-06 | 合肥工业大学 | Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6504385B2 (en) * | 2001-05-31 | 2003-01-07 | Hewlett-Pakcard Company | Three-axis motion sensor |
| TWI255341B (en) * | 2004-06-10 | 2006-05-21 | Chung Shan Inst Of Science | Miniature accelerator |
| CN100565212C (en) * | 2006-07-27 | 2009-12-02 | 浙江杜翔科技有限公司 | Micro-machine acceleration transducer and manufacture method based on (111) silicon |
| TW200813431A (en) * | 2006-08-09 | 2008-03-16 | Hitachi Metals Ltd | Multi-range three-axis acceleration sensor device |
| TW200839242A (en) * | 2007-02-02 | 2008-10-01 | Alps Electric Co Ltd | Electrostatic capacitance type acceleration sensor |
| CN102384984B (en) * | 2010-09-02 | 2013-06-12 | 孙博华 | Capacitive single-mass block full comb electrode sensor for triaxial acceleration and manufacturing method thereof |
-
2013
- 2013-07-30 CN CN201310324970.2A patent/CN103412147B/en active Active
- 2013-07-30 CN CN201510250312.2A patent/CN104914273B/en active Active
- 2013-07-30 CN CN201510250164.4A patent/CN104880574B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1790029A (en) * | 2004-12-16 | 2006-06-21 | 富士通媒体部品株式会社 | Acceleration sensor |
| CN101270989A (en) * | 2008-03-14 | 2008-09-24 | 江苏英特神斯科技有限公司 | Integrated 5-axis movement sensor based on MEMS technology |
| CN102401842A (en) * | 2011-07-08 | 2012-04-04 | 上海亚尚电子科技有限公司 | Non-equal height comb teeth capacitive triaxial acceleration transducer and method for manufacturing same |
| CN102955046A (en) * | 2012-10-23 | 2013-03-06 | 合肥工业大学 | Monolithic integrated CMOS (Complementary Metal Oxide Semiconductor) MEMS (Micro-electromechanical Systems) multilayer metal three-axis capacitive accelerometer and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103412147A (en) | 2013-11-27 |
| CN103412147B (en) | 2015-05-20 |
| CN104914273A (en) | 2015-09-16 |
| CN104880574A (en) | 2015-09-02 |
| CN104914273B (en) | 2018-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104880574B (en) | 3-axis acceleration sensing chip | |
| EP2616389B1 (en) | Multi-die mems package | |
| KR101975131B1 (en) | Mems pressure sensor and mems inertial sensor integration structure | |
| US10427933B2 (en) | Microelectromechanical sensor device with reduced stress-sensitivity and corresponding manufacturing process | |
| KR20130018857A (en) | Package structure for silicon pressure sensor | |
| JP4578087B2 (en) | Acceleration sensor | |
| CN104880572B (en) | MEMS high-range acceleration transducer part | |
| US9903884B2 (en) | Parallel plate capacitor and acceleration sensor comprising same | |
| CN101368988A (en) | Package-free piezo-electricity drive type miniature electric field sensor | |
| CN104198763B (en) | TSV (through silicon via) wafer-level packaged triaxial MEMS (micro-electro-mechanical systems) accelerometer | |
| CN203365462U (en) | High-reliability acceleration sensor | |
| KR101573367B1 (en) | Piezoresistive typed ceramic pressure sensor | |
| CN203385753U (en) | Mems acceleration sensor | |
| CN105466426A (en) | Tracking system for motion inertia | |
| CN102040188A (en) | Method for eliminating adhesion phenomenon of suspended structure of micro-electromechanical system (MEMS) | |
| US9296607B2 (en) | Apparatus and method for reduced strain on MEMS devices | |
| CN215756429U (en) | Micromechanical chip for overload buffering | |
| CN110683507B (en) | Anti-interference MEMS device | |
| US20150048463A1 (en) | Package device for microelectromechanical inertial sensor | |
| CN110568220A (en) | Anti-interference overload-resistant MEMS accelerometer | |
| Young et al. | Package-induced temperature dependence of MEMS capacitive strain sensor and system design considerations | |
| JP2017044492A (en) | Sensor and joint structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230605 Address after: Room E0804, No. 388, Ruoshui Road, Industrial Park, Suzhou City, Jiangsu Province, 215000 Patentee after: Suzhou Mingyi Sensor Technology Co.,Ltd. Address before: 215153 No. 200 Huajin Road, Tongan Economic Development Zone, Suzhou New District, Jiangsu Province Patentee before: SUZHOU GOODARK ELECTRONICS Co.,Ltd. |