CN103412147A - Three-axis acceleration sensor - Google Patents
Three-axis acceleration sensor Download PDFInfo
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- CN103412147A CN103412147A CN2013103249702A CN201310324970A CN103412147A CN 103412147 A CN103412147 A CN 103412147A CN 2013103249702 A CN2013103249702 A CN 2013103249702A CN 201310324970 A CN201310324970 A CN 201310324970A CN 103412147 A CN103412147 A CN 103412147A
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Abstract
The invention discloses a three-axis acceleration sensor which comprises an MEMS accelerated speed chip, a signal processing chip and a substrate. The MEMS accelerated speed chip comprises a cover body, a micro mechanical system and a circuit substrate, and the micro mechanical system is composed of an X axis accelerated speed induction area, a Y axis accelerated speed induction area and a Z axis accelerated speed induction area; the Y axis accelerated speed induction area comprises an H-shaped motion piece with two through holes in the Y direction, two motion electrodes in the Y direction and two fixed electrodes in the Y direction; the Z axis accelerated speed induction area comprises quality strip bars and a supporting shaft; the lower surface of the signal processing chip is pasted with the surface of the cover body of the MEMS accelerated speed chip through a first insulated adhesive layer, the circuit substrate of the MEMS accelerated speed chip is pasted with part of the substrate area through a second insulated adhesive layer, a first metal wire is arranged between a chip welding point and a signal inputting welding point in a spanning mode, and a second metal wire is arranged between a signal output welding point and a substrate welding point in a spanning mode. The three-axis acceleration sensor improves the reliability of appliances and effectively reduces stress damage to the chip by external force.
Description
Technical field
The present invention relates to the acceleration transducer technical field, be specifically related to a kind of 3-axis acceleration sensor.
Background technology
Micro electro-mechanical systems acceleration sensor is because volume is little, quality is light, cost is low, high reliability receives much concern, and the Aero-Space and the weapons scientific domain that especially in the volume to device, quality and reliability, have high requirements have very large application prospect.The research development in recent years of acceleration transducer is rapid, and the high-range acceleration transducer of various performances, range is own through in succession reporting.But acceleration transducer is very high to anti high overload ability and natural frequency requirement, and generally the anti high overload Capability Requirement can bear a hundreds of thousands range shock load, and natural frequency requires up to tens kHz, kHz even up to a hundred.Therefore, the MEMS high-range acceleration transducer usually causes structural failure because the anti high overload ability is poor in application.For guaranteeing the reliability of MEMS high-range acceleration transducer when applying, it is particularly important that the encapsulation of MEMS high-range acceleration transducer just seems.Practice shows, existing sensor package technology ubiquity anti high overload ability, the problem that natural frequency is low and package reliability is poor, namely adopt MEMS high-range acceleration transducer after existing sensor package technology encapsulation when running into severe applied environment, often occur that shell breaks, cover plate depression, chip from the shell substrate come off, the problem such as wire breaking.Based on this, be necessary to invent a kind of 3-axis acceleration sensor, to guarantee the reliability of acceleration transducer when applying.
Summary of the invention
The object of the invention is to provide a kind of 3-axis acceleration sensor, and this 3-axis acceleration sensor has improved the reliability of device and effectively reduced the stress damage of external force to chip.
For achieving the above object, the technical solution used in the present invention is: a kind of 3-axis acceleration sensor, comprise MEMS acceleration chip, be used for the signal processing chip and the substrate that filter undesired signal and process induced signal, described MEMS acceleration chip is by lid, micro mechanical system and for generation of the circuit substrate of induced signal, this micro mechanical system is by X-axis acceleration induction district, Y-axis acceleration induction district and the Z axis acceleration induction district composition moved be used to responding to extraneous Z axis, thereby described lid and circuit substrate edge are by the bonding annular seal space that forms of sealant layer, described micro mechanical system is positioned at annular seal space and at the circuit substrate upper surface, the height in sealing chamber is 45 ~ 55 μ m,
Described X-axis acceleration induction district comprises X-direction " H " the shape motion sheet with 2 through holes, 2 X-direction moving electrodes and 2 X-direction fixed electordes, the first spring and the second spring an end separately are respectively installed to the left side of X-direction " H " shape motion sheet, right-hand member, the first spring and the second spring other end separately are respectively installed on described circuit substrate, 2 described X-direction moving electrodes lay respectively in 2 through holes of X-direction " H " shape motion sheet and can move with this X-direction " H " shape motion sheet, described X-direction fixed electorde and X-direction moving electrodes arrange face-to-face and it is under the X-direction moving electrodes,
Described Y-axis acceleration induction district comprises Y-direction " H " the shape motion sheet with 2 through holes, 2 Y-direction moving electrodes and 2 Y-direction fixed electordes, the 3rd spring and the 4th spring an end separately are respectively installed to Y-direction " H " shape motion sheet upper and lower end, the 3rd spring and the 4th the spring other end separately are respectively installed on described circuit substrate, 2 described Y-direction moving electrodes lay respectively in the through hole of Y-direction " H " shape motion sheet and can move with this Y-direction " H " shape motion sheet, the setting and it is under the Y-direction moving electrodes face-to-face of Y-direction fixed electorde and Y-direction moving electrodes; X-direction moving electrodes in Y-direction " H " shape motion sheet, the 3rd spring and the 4th spring rows column direction and X-axis acceleration induction district in described Y-axis acceleration induction district, the first spring are vertical with the second spring rows column direction; Described Z axis acceleration induction district comprises the quality stick and be used to supporting the back shaft at quality stick center, described quality stick is equipped with the Z axis induction electrode under two ends, and described quality stick is equipped with positive stop directly over two ends;
Described signal processing chip lower surface is bonding by the top surface of the first insulating gel adhesion coating and MEMS acceleration chip, the circuit substrate surface of this MEMS acceleration chip is bonding by the second insulating gel adhesion coating and substrate portion zone, circuit substrate and substrate upper surface separately have the substrate pad in several chip soldering contacts and several distribution substrate both sides of the edge districts, the signal processing chip upper surface has several signal input pads and signal output pad, this signal output pad is distributed in signal processing chip both sides of the edge district, some the first metal wires are connected across between described chip soldering contact and signal input pad, some the second metal wires that are distributed in both sides are connected across between described signal output pad and substrate pad.
In technique scheme, further improved plan is as follows:
1. in such scheme, described X-direction " H " shape motion sheet upper and lower end is equipped with the first projection, and this first projection is between 2 the first limiting sections of described circuit substrate.
2. in such scheme, described Y-direction " H " shape motion sheet upper and lower end is equipped with the second projection, and this second projection is between 2 the second limiting sections of described circuit substrate.
3. in such scheme, the height of described annular seal space is 50 μ m.
4. in such scheme, described X-axis acceleration induction district and Y-axis acceleration induction district are positioned at a row, and described Z axis acceleration induction district and X-axis acceleration induction district and Y-axis acceleration induction district be arranged in parallel.
5. in such scheme, described substrate pad is offered the circuit substrate upper surface and is positioned at lid one side.
6. in such scheme, described through hole is square.
Because technique scheme is used, the present invention compared with prior art has following advantages and effect:
1. 3-axis acceleration sensor of the present invention, its signal processing chip lower surface is bonding by the top surface of the first insulating gel adhesion coating and MEMS acceleration chip, the circuit substrate surface of this MEMS acceleration chip is bonding by the second insulating gel adhesion coating and substrate portion zone, circuit substrate and substrate upper surface separately have the substrate pad in several chip soldering contacts and several distribution substrate both sides of the edge districts, the signal processing chip upper surface has several signal input pads and signal output pad, this signal output pad is distributed in signal processing chip both sides of the edge district, some the first metal wires are connected across between described chip soldering contact and signal input pad, some the second metal wires that are distributed in both sides are connected across between described signal output pad and substrate pad, package reliability is high, welding by the insulation glue-line effectively reduces the stress damage of external force to chip, arrange to design and can in minimum encapsulated space, carry out the welding of line in the position of pad, first makes the shorter cost of gold thread of line lower, next adopts the technique of threading in insulating gel can solve the problem of the routing bank shakiness of the high step difference opposite sex, improve the feasibility of product volume production.
2. 3-axis acceleration sensor of the present invention, its X-direction " H " shape motion sheet upper and lower end is equipped with the first projection, this first projection is between 2 the first limiting sections of described circuit substrate, Y-direction " H " shape motion sheet upper and lower end is equipped with the second projection, this second projection, between 2 the second limiting sections of described circuit substrate, prevents that effectively product from avoiding X-axis, Y-axis acceleration induction district inner structure to damage under the effect of acceleration.
3. 3-axis acceleration sensor of the present invention, its Z axis acceleration induction district comprises the quality stick and be used to supporting the back shaft at quality stick center, described quality stick is equipped with the Z axis induction electrode under two ends, described quality stick is equipped with positive stop directly over two ends, can effectively protect the mechanicalness damage of inner structure, the sensitivity aspect for induction improves a lot simultaneously.
4. 3-axis acceleration sensor of the present invention, its X-axis acceleration induction district and Y-axis acceleration induction district are positioned at a row, described Z axis acceleration induction district and X-axis acceleration induction district and Y-axis acceleration induction district be arranged in parallel, effectively reduce induction zone shared position in chip circuit, more having superiority aspect the feasibility of cost and encapsulation; Secondly, the substrate pad is offered the circuit substrate upper surface and is positioned at lid one side, is conducive to the difficulty that chip is arranged and reduced cutting and routing in encapsulation process.
The accompanying drawing explanation
Fig. 1 is 3-axis acceleration sensor structural representation of the present invention;
Fig. 2 is the left TV structure schematic diagram of accompanying drawing 1;
Fig. 3 is the structural representation of looking up of accompanying drawing 1;
Fig. 4 is MEMS acceleration chip structure schematic diagram of the present invention;
Fig. 5 is micro mechanical system structural representation of the present invention;
Fig. 6 is X-axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention;
Fig. 7 is X-axis acceleration induction of the present invention district partial structurtes schematic diagram;
Fig. 8 is Y-axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention;
Fig. 9 is Z axis acceleration induction plot structure schematic diagram in acceleration transducer of the present invention;
Figure 10 is the structural representation of looking up of accompanying drawing 9.
In above accompanying drawing: 1, MEMS acceleration chip; 2, signal processing chip; 3, substrate; 4, lid; 5, micro mechanical system; 6, circuit substrate; 7, X-axis acceleration induction district; 71, X-direction " H " shape motion sheet; 72, X-direction moving electrodes; 73, X-direction fixed electorde; 74, the first spring; 75, the second spring; 8, Y-axis acceleration induction district; 81, Y-direction " H " shape motion sheet; 82, Y-direction moving electrodes; 83, Y-direction fixed electorde; 84, the 3rd spring; 85, the 4th spring; 9, Z axis acceleration induction district; 10, sealant layer; 11, annular seal space; 12, the first insulating gel adhesion coating; 13, the second insulating gel adhesion coating; 14, chip soldering contact; 15, substrate pad; 16, signal input pad; 17, signal output pad; 18, the first metal wire; 19, the second metal wire; 20, the first projection; 21, the first limiting section; 22, the second projection; 23, the second limiting section; 24, quality stick; 25, back shaft; 26, Z axis induction electrode; 27, positive stop.
Embodiment
The invention will be further described below in conjunction with embodiment:
Embodiment: a kind of 3-axis acceleration sensor, comprise MEMS acceleration chip 1, be used for the signal processing chip 2 and the substrate 3 that filter undesired signal and process induced signal, described MEMS acceleration chip 1 is by lid 4, micro mechanical system 5 and for generation of the circuit substrate 6 of induced signal, this micro mechanical system 5 is by X-axis acceleration induction district 7, Y-axis acceleration induction district 8 and Z axis acceleration induction district 9 compositions be used to responding to extraneous Z axis motion, thereby described lid 4 and circuit substrate 6 edges are by the bonding annular seal space 11 that forms of sealant layer 10, described micro mechanical system 5 is positioned at annular seal space 11 and at circuit substrate 6 upper surfaces, the height in sealing chamber 11 is 45 ~ 55 μ m,
Described X-axis acceleration induction district 7 comprises X-direction " H " the shape motion sheet 71 with 2 through holes, 2 X-direction moving electrodes 72 and 2 X-direction fixed electordes 73, the first spring 74 and the second spring 75 end separately are respectively installed to the left side of X-direction " H " shape motion sheet 71, right-hand member, the first spring 74 and the second spring 75 other end separately are respectively installed on described circuit substrate 6, 2 described X-direction moving electrodes 72 lay respectively in 2 through holes of X-direction " H " shape motion sheet 71 and can be with 71 motions of this X-direction " H " shape motion sheet, described X-direction fixed electorde 73 arranges face-to-face with X-direction moving electrodes 72 and it is under X-direction moving electrodes 72,
Described Y-axis acceleration induction district 8 comprises Y-direction " H " the shape motion sheet 81 with 2 through holes, 2 Y-direction moving electrodes 82 and 2 Y-direction fixed electordes 83, the 3rd spring 84 and the 4th spring 85 end separately are respectively installed on Y-direction " H " shape motion sheet 81, lower end, the 3rd spring 84 and the 4th spring 85 other end separately are respectively installed on described circuit substrate 6, 2 described Y-direction moving electrodes 82 lay respectively in the through hole of Y-direction " H " shape motion sheet 81 and can be with 81 motions of this Y-direction " H " shape motion sheet, Y-direction fixed electorde 83 arranges face-to-face with Y-direction moving electrodes 82 and it is under Y-direction moving electrodes 82, X-direction moving electrodes 72 in Y-direction " H " shape motion sheet 81, the 3rd spring 84 and the 4th spring 85 orientations and X-axis acceleration induction district 7 in described Y-axis acceleration induction district 8, the first spring 74 are vertical with the second spring 75 orientations, described Z axis acceleration induction district 9 comprises quality stick 24 and be used to supporting the back shaft 25 at quality stick 24 centers, described quality stick is equipped with Z axis induction electrode 26 under 24 two ends, and described quality stick is equipped with positive stop 27 directly over 24 two ends,
Described signal processing chip 2 lower surfaces are by lid 4 surface bindeds of the first insulating gel adhesion coating 12 with MEMS acceleration chip 1, circuit substrate 6 surfaces of this MEMS acceleration chip 1 are bonding with substrate 3 subregions by the second insulating gel adhesion coating 13, circuit substrate 6 and substrate 3 upper surface separately have the substrate pad 15 in several chip soldering contacts 14 and several distribution substrate 3 both sides of the edge districts, signal processing chip 2 upper surfaces have several signal input pads 16 and signal output pad 17, this signal output pad 17 is distributed in signal processing chip 2 both sides of the edge districts, some the first metal wires 18 are connected across between described chip soldering contact 14 and signal input pad 16, some the second metal wires 19 that are distributed in both sides are connected across between described signal output pad 17 and substrate pad 15.
Above-mentioned X-direction " H " shape motion sheet 71 upper and lower ends are equipped with the first projection 20, and this first projection is between 2 the first limiting sections 21 of described circuit substrate 6.
Above-mentioned Y-direction " H " shape motion sheet 81 upper and lower ends are equipped with the second projection 22, and this second projection 22 is between 2 the second limiting sections 23 of described circuit substrate 6.
The height of above-mentioned annular seal space 11 is 50 μ m.
Above-mentioned X-axis acceleration induction district 7 and Y-axis acceleration induction district 8 are positioned at a row, and described Z axis acceleration induction district 9 and X-axis acceleration induction district 7 and Y-axis acceleration induction district 8 be arranged in parallel.
Above-described embodiment only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the person skilled in the art can understand content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.
Claims (7)
1. 3-axis acceleration sensor, it is characterized in that: comprise MEMS acceleration chip (1), be used for the signal processing chip (2) and the substrate (3) that filter undesired signal and process induced signal, described MEMS acceleration chip (1) is by lid (4), micro mechanical system (5) and for generation of the circuit substrate (6) of induced signal, this micro mechanical system (5) is by X-axis acceleration induction district (7), Y-axis acceleration induction district (8) and Z axis acceleration induction district (9) composition moved be used to responding to extraneous Z axis, described lid (4) and circuit substrate (6) edge by sealant layer (10) thus the bonding annular seal space (11) that forms, described micro mechanical system (5) is positioned at annular seal space (11) and at circuit substrate (6) upper surface, the height in sealing chamber (11) is 45 ~ 55 μ m,
Described X-axis acceleration induction district (7) comprises X-direction " H " the shape motion sheet (71) with 2 through holes, 2 X-direction moving electrodes (72) and 2 X-direction fixed electordes (73), the first spring (74) and the second spring (75) end separately are respectively installed to the left side of X-direction " H " shape motion sheet (71), right-hand member, the first spring (74) and the second spring (75) other end separately are respectively installed on described circuit substrate (6), 2 described X-direction moving electrodes (72) lay respectively in 2 through holes of X-direction " H " shape motion sheet (71) and can move with this X-direction " H " shape motion sheet (71), described X-direction fixed electorde (73) arranges face-to-face with X-direction moving electrodes (72) and it is under X-direction moving electrodes (72),
Described Y-axis acceleration induction district (8) comprises Y-direction " H " the shape motion sheet (81) with 2 through holes, 2 Y-direction moving electrodes (82) and 2 Y-direction fixed electordes (83), the 3rd spring (84) and the 4th spring (85) end separately are respectively installed on Y-direction " H " shape motion sheet (81), lower end, the 3rd spring (84) and the 4th spring (85) other end separately are respectively installed on described circuit substrate (6), 2 described Y-direction moving electrodes (82) lay respectively in the through hole of Y-direction " H " shape motion sheet (81) and can move with this Y-direction " H " shape motion sheet (81), Y-direction fixed electorde (83) arranges face-to-face with Y-direction moving electrodes (82) and it is under Y-direction moving electrodes (82), Y-direction " H " shape motion sheet (81), the 3rd spring (84) and the 4th spring (85) orientation and the middle X-direction moving electrodes (72) in X-axis acceleration induction district (7) in described Y-axis acceleration induction district (8), the first spring (74) are vertical with the second spring (75) orientation, described Z axis acceleration induction district (9) comprises quality stick (24) and be used to supporting the back shaft (25) at quality stick (24) center, described quality stick (24) is equipped with Z axis induction electrode (26) under two ends, and described quality stick (24) is equipped with positive stop (27) directly over two ends,
Described signal processing chip (2) lower surface is by lid (4) surface binded of the first insulating gel adhesion coating (12) with MEMS acceleration chip (1), circuit substrate (6) surface of this MEMS acceleration chip (1) is bonding by the second insulating gel adhesion coating (13) and substrate (3) subregion, circuit substrate (6) and substrate (3) upper surface separately have the substrate pad (15) in several chip soldering contacts (14) and several distribution substrate (3) both sides of the edge districts, signal processing chip (2) upper surface has several signal input pads (16) and signal output pad (17), this signal output pad (17) is distributed in signal processing chip (2) both sides of the edge district, some the first metal wires (18) are connected across between described chip soldering contact (14) and signal input pad (16), some the second metal wires (19) that are distributed in both sides are connected across between described signal output pad (17) and substrate pad (15).
2. 3-axis acceleration sensor according to claim 1, it is characterized in that: described X-direction " H " shape motion sheet (71) upper and lower end is equipped with the first projection (20), and this first projection is positioned between 2 first limiting sections (21) of described circuit substrate (6).
3. 3-axis acceleration sensor according to claim 1, it is characterized in that: described Y-direction " H " shape motion sheet (81) upper and lower end is equipped with the second projection (22), and this second projection (22) is positioned between 2 second limiting sections (23) of described circuit substrate (6).
4. 3-axis acceleration sensor according to claim 1, it is characterized in that: the height of described annular seal space (11) is 50 μ m.
5. 3-axis acceleration sensor according to claim 1, it is characterized in that: described X-axis acceleration induction district (7) and Y-axis acceleration induction district (8) are positioned at a row, and described Z axis acceleration induction district (9) and X-axis acceleration induction district (7) and Y-axis acceleration induction district (8) be arranged in parallel.
6. 3-axis acceleration sensor according to claim 1, it is characterized in that: described substrate pad (15) is offered circuit substrate (6) upper surface and is positioned at lid (4) one sides.
7. 3-axis acceleration sensor according to claim 1, it is characterized in that: described through hole is square.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510250312.2A CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
| CN201510250164.4A CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
| CN201310324970.2A CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310324970.2A CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510250312.2A Division CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
| CN201510250164.4A Division CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
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| Publication Number | Publication Date |
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| CN103412147A true CN103412147A (en) | 2013-11-27 |
| CN103412147B CN103412147B (en) | 2015-05-20 |
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| CN201310324970.2A Active CN103412147B (en) | 2013-07-30 | 2013-07-30 | Three-axis acceleration sensor |
| CN201510250164.4A Active CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
| CN201510250312.2A Active CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
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| CN201510250164.4A Active CN104880574B (en) | 2013-07-30 | 2013-07-30 | 3-axis acceleration sensing chip |
| CN201510250312.2A Active CN104914273B (en) | 2013-07-30 | 2013-07-30 | For detecting the sensor of three-dimensional acceleration |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105371845A (en) * | 2015-12-17 | 2016-03-02 | 安徽寰智信息科技股份有限公司 | Inertia tracking module |
| CN105466426A (en) * | 2015-12-17 | 2016-04-06 | 安徽寰智信息科技股份有限公司 | Tracking system for motion inertia |
| CN105628022A (en) * | 2015-12-17 | 2016-06-01 | 安徽寰智信息科技股份有限公司 | Inertial tracking module applied to three-dimensional human-machine interaction system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2020101484A (en) * | 2018-12-25 | 2020-07-02 | セイコーエプソン株式会社 | Inertia sensor, electronic apparatus and moving body |
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| US6504385B2 (en) * | 2001-05-31 | 2003-01-07 | Hewlett-Pakcard Company | Three-axis motion sensor |
| TWI255341B (en) * | 2004-06-10 | 2006-05-21 | Chung Shan Inst Of Science | Miniature accelerator |
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| CN101270989A (en) * | 2008-03-14 | 2008-09-24 | 江苏英特神斯科技有限公司 | Integrated 5-axis movement sensor based on MEMS technology |
| CN102401842A (en) * | 2011-07-08 | 2012-04-04 | 上海亚尚电子科技有限公司 | Non-equal height comb teeth capacitive triaxial acceleration transducer and method for manufacturing same |
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| CN105628022A (en) * | 2015-12-17 | 2016-06-01 | 安徽寰智信息科技股份有限公司 | Inertial tracking module applied to three-dimensional human-machine interaction system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103412147B (en) | 2015-05-20 |
| CN104880574B (en) | 2018-12-14 |
| CN104914273B (en) | 2018-05-22 |
| CN104914273A (en) | 2015-09-16 |
| CN104880574A (en) | 2015-09-02 |
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